公开(公告)号：US06767796B2

公开(公告)日：2004-07-27

申请号：US09973744

申请日：2001-10-11

申请人： Masayuki Tanaka ,  Kazuaki Nakajima ,  Yoshitaka Tsunashima ,  Takayuki Ito ,  Kyoichi Suguro

发明人： Masayuki Tanaka ,  Kazuaki Nakajima ,  Yoshitaka Tsunashima ,  Takayuki Ito ,  Kyoichi Suguro

IPC分类号： H01L2128

CPC分类号： H01L21/324 ,  H01L21/28518 ,  H01L21/32053 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76864 ,  H01L21/76886 ,  H01L29/665

摘要： An aspect of the present invention provides a method of manufacturing a semiconductor device, including, forming an insulating film on a silicide layer formed at the surface of a silicon semiconductor substrate, etching the insulating film to form a contact hole in which the silicide layer is exposed, forming a metal nitride film on the bottom and side wall of the contact hole, carrying out a first heating process at 600° C. or lower on the substrate, carrying out, during the first heating process, a second heating process for 10 msec or shorter with light whose main wavelength is shorter than a light absorbing end of silicon, forming a contact conductor in the contact hole after the second heating process, and forming, on the insulating film, wiring that is electrically connected to the substrate through the contact conductor.

公开(公告)号：US06376888B1

公开(公告)日：2002-04-23

申请号：US09559356

申请日：2000-04-27

申请人： Yoshitaka Tsunashima ,  Kyoichi Suguro ,  Atsushi Murakoshi ,  Kouji Matsuo ,  Toshihiko Iinuma

发明人： Yoshitaka Tsunashima ,  Kyoichi Suguro ,  Atsushi Murakoshi ,  Kouji Matsuo ,  Toshihiko Iinuma

IPC分类号： H01L2976

CPC分类号： H01L21/28185 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66583

摘要： Disclosed is a semiconductor device having an N-type MIS transistor formed in a first region and a P-type MIS transistor formed in a second region, wherein, the N-type MIS transistor includes a first gate insulating film formed on at least the bottom of a first concave portion formed in the first region and a first gate electrode formed on the first gate insulating film, the P-type MIS transistor includes a second gate insulating film formed on at least the bottom of a second concave portion formed in the second region and a second gate electrode formed on the second gate insulating film, each of the first and second gate electrodes includes at least one metal-containing film, and at least one of the first and second gate electrodes is of a laminate structure including a plurality of the metal-containing films, and the work function of the metal-containing film constituting at least a part of the first gate electrode and in contact with the first gate insulating film is smaller than the work function of the metal-containing film constituting at least a part of the second gate electrode and in contact with the second gate insulating film.

摘要翻译： 公开了一种半导体器件，其具有形成在第一区域中的N型MIS晶体管和形成在第二区域中的P型MIS晶体管，其中，所述N型MIS晶体管包括形成在至少底部的第一栅极绝缘膜 形成在所述第一区域中的第一凹部和形成在所述第一栅极绝缘膜上的第一栅电极，所述P型MIS晶体管包括形成在所述第二栅极绝缘膜的至少第二凹部的底部上的第二栅极绝缘膜， 区域和形成在所述第二栅极绝缘膜上的第二栅极电极，所述第一和第二栅极电极中的每一个包括至少一个含金属膜，并且所述第一和第二栅极电极中的至少一个是包括多个 的含金属膜的膜，并且构成第一栅电极的至少一部分并与第一栅极绝缘膜接触的含金属膜的功函数小于th 构成至少一部分第二栅电极并与第二栅极绝缘膜接触的含金属膜的功函数。

公开(公告)号：US06284583B1

公开(公告)日：2001-09-04

申请号：US09105024

申请日：1998-06-26

申请人： Shigehiko Saida ,  Yoshitaka Tsunashima

发明人： Shigehiko Saida ,  Yoshitaka Tsunashima

IPC分类号： H01L218249

CPC分类号： H01L21/3185 ,  C23C16/0218 ,  C23C16/0272 ,  C23C16/345 ,  H01L27/10852 ,  H01L27/10861

摘要： A semiconductor device comprises a semiconductor substrate and a silicon nitride film formed on the semiconductor substrate. The silicon nitride film is substantially free from an Si—H bond and has an Si—H density per unit area of 1×1015 cm−2 or less.

摘要翻译： 半导体器件包括形成在半导体衬底上的半导体衬底和氮化硅膜。 氮化硅膜基本上不含Si-H键，并且每单位面积的Si-H密度为1×10 15 cm -2以下。

公开(公告)号：US06278164B1

公开(公告)日：2001-08-21

申请号：US08996704

申请日：1997-12-23

申请人： Katsuhiko Hieda ,  Yoshitaka Tsunashima ,  Keitaro Imai ,  Tomonori Aoyama

发明人： Katsuhiko Hieda ,  Yoshitaka Tsunashima ,  Keitaro Imai ,  Tomonori Aoyama

IPC分类号： H01L2976

CPC分类号： H01L29/513 ,  H01L29/4983 ,  H01L29/516 ,  H01L29/517 ,  H01L29/66537 ,  H01L29/66545 ,  H01L29/78391

摘要： A p-type silicon substrate has an element isolation region of an STI structure formed therein. A transistor region isolated by the isolation region has a n-type source/drain diffusion layer. Further, a p-channel impurity layer is formed substantially only in its channel region for controlling its threshold voltage (Vth). A gate insulator film consisting of a high dielectric film is formed on the channel region with an Si3N4 film interposed therebetween. A metal gate electrode having its bottom and side surfaces covered with the gate insulator film is provided in a self-alignment manner with respect to the source/drain diffusion layer.

摘要翻译： p型硅衬底具有形成在其中的STI结构的元件隔离区域。 由隔离区隔离的晶体管区域具有n型源极/漏极扩散层。 此外，p沟道杂质层基本上仅在其沟道区域中形成，用于控制其阈值电压（Vth）。 在沟道区域上形成由高介电膜构成的栅极绝缘膜，其间插入有Si 3 N 4膜。 相对于源极/漏极扩散层以自对准的方式设置具有被栅极绝缘膜覆盖的底部和侧面的金属栅电极。

公开(公告)号：US6087719A

公开(公告)日：2000-07-11

申请号：US64984

申请日：1998-04-23

申请人： Yoshitaka Tsunashima

发明人： Yoshitaka Tsunashima

IPC分类号： H01L25/18 ,  H01L21/768 ,  H01L21/98 ,  H01L23/48 ,  H01L23/64 ,  H01L25/065 ,  H01L25/07 ,  H01L25/10 ,  H01L23/02

CPC分类号： H01L25/50 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/642 ,  H01L25/0657 ,  H01L2224/051 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/16 ,  H01L2224/81121 ,  H01L2224/95121 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2225/06593

摘要： A plurality of chips each having two or more alignment holes for transmitting a laser beam are stacked. The laser beam is irradiated onto the uppermost or lowermost one of the stacked chips. A photodetector detects the laser beam output from the stacked chips through the alignment holes in these chips. The positions of the chips are so controlled that the amount of the light detected by this photodetector is a maximum.

摘要翻译： 堆叠具有两个以上的用于透射激光束的对准孔的多个芯片。 将激光束照射到堆叠芯片的最上面或最下面的一个。 光电检测器通过这些芯片中的对准孔检测从堆叠芯片输出的激光束。 芯片的位置如此被控制，使得由该光电检测器检测到的光的量是最大的。

公开(公告)号：US5888876A

公开(公告)日：1999-03-30

申请号：US628094

申请日：1996-04-09

申请人： Jun-ichi Shiozawa ,  Yoshitaka Tsunashima ,  Katsuya Okumura

发明人： Jun-ichi Shiozawa ,  Yoshitaka Tsunashima ,  Katsuya Okumura

IPC分类号： H01L21/76 ,  H01L21/334 ,  H01L21/763 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/20

CPC分类号： H01L29/66181 ,  H01L21/763 ,  H01L21/76877

摘要： A method of filling one or more trenches formed in a silicon substrate includes the steps of forming a thin polycrystalline silicon film in a trench such that the thin polycrystalline silicon film is sufficiently thin so as to not close the trench; forming an amorphous silicon film on thin polycrystalline film and the surface of the substrate and in the trenches; and annealing the amorphous silicon film such that the amorphous silicon layer migrates to fill the trenches to a first level. The deposition and annealing steps are performed in ambient atmospheres having low partial pressures of H.sub.2 O and O.sub.2, the annealing temperature is higher than the deposition temperature, and the annealing pressure is greater than the deposition pressure.

摘要翻译： 填充形成在硅衬底中的一个或多个沟槽的方法包括以下步骤：在沟槽中形成薄多晶硅膜，使得薄多晶硅膜足够薄以便不关闭沟槽; 在薄多晶膜和衬底的表面和沟槽中形成非晶硅膜; 以及使所述非晶硅膜退火，使得所述非晶硅层迁移以将所述沟槽填充至第一水平。 沉积和退火步骤在具有低的H 2 O和O 2分压的环境气氛中进行，退火温度高于沉积温度，并且退火压力大于沉积压力。

公开(公告)号：US5879447A

公开(公告)日：1999-03-09

申请号：US478765

申请日：1995-06-07

申请人： Takako Okada ,  Shigeru Kambayashi ,  Moto Yabuki ,  Shinji Onga ,  Yoshitaka Tsunashima ,  Yuuichi Mikata ,  Haruo Okano

发明人： Takako Okada ,  Shigeru Kambayashi ,  Moto Yabuki ,  Shinji Onga ,  Yoshitaka Tsunashima ,  Yuuichi Mikata ,  Haruo Okano

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/28 ,  H01L21/329 ,  H01L21/334 ,  H01L21/336 ,  H01L21/822 ,  H01L21/8249 ,  H01L27/04 ,  H01L27/06 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  C30B19/00

CPC分类号： H01L28/82 ,  H01L21/2022 ,  H01L21/28035 ,  H01L29/6609 ,  H01L29/66181 ,  H01L29/66613 ,  H01L29/66628 ,  H01L29/66651 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/49 ,  H01L29/78654

摘要： A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter-atomic distance of main constituent element of the amorphous thin film is 1.02 times or more of an average inter-atomic distance of the elements in single crystal, and crystallization energy is applied to the amorphous thin film to perform solid phase growth to thereby form a single crystal. In another embodiment of the present invention, an amorphous semiconductor thin film is formed on a substrate or an insulating film such that an average inter-atomic distance distribution of main constituent element of the film substantially coincides with an average inter-atomic distance distribution of the element in a single crystal, and crystallization energy is applied to the amorphous semiconductor thin film to cause solid phase growth to thereby form a single crystalline semiconductor thin film.

公开(公告)号：US5849089A

公开(公告)日：1998-12-15

申请号：US818750

申请日：1997-03-14

申请人： Yoshitaka Tsunashima ,  Katsuya Okumura

发明人： Yoshitaka Tsunashima ,  Katsuya Okumura

IPC分类号： C23C16/44 ,  C23C16/40 ,  C23C16/448 ,  H01L21/205 ,  H01L21/31 ,  C23C16/00

CPC分类号： C23C16/4483 ,  C23C16/402 ,  C23C16/4485

摘要： Inside a first cylinder for structuring an evaporator, a second cylinder is provided. The second cylinder has an undulated surface and a plurality of fine holes are provided on this surface. A liquid TEOS is contained in a first space positioned between the first cylinder and the second cylinder, and a second space positioned inside the second cylinder is filled with a gas TEOS evaporated from the fine holes. The pressure of the gas TEOS is set to be almost equal to the pressure of the liquid TEOS.

摘要翻译： 在用于构造蒸发器的第一气缸内部，设置有第二气缸。 第二圆柱体具有波状表面，并且在该表面上设置有多个细孔。 液体TEOS容纳在位于第一气缸和第二气缸之间的第一空间中，并且位于第二气缸内部的第二空间填充有从细孔蒸发的气体TEOS。 气体TEOS的压力被设定为几乎等于液体TEOS的压力。

公开(公告)号：US5582640A

公开(公告)日：1996-12-10

申请号：US56443

申请日：1993-04-30

申请人： Takako Okada ,  Shigeru Kambayashi ,  Moto Yabuki ,  Shinji Onga ,  Yoshitaka Tsunashima ,  Yuuichi Mikata ,  Haruo Okano

发明人： Takako Okada ,  Shigeru Kambayashi ,  Moto Yabuki ,  Shinji Onga ,  Yoshitaka Tsunashima ,  Yuuichi Mikata ,  Haruo Okano

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/28 ,  H01L21/329 ,  H01L21/334 ,  H01L21/336 ,  H01L21/822 ,  H01L21/8249 ,  H01L27/04 ,  H01L27/06 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L28/82 ,  H01L21/2022 ,  H01L21/28035 ,  H01L29/6609 ,  H01L29/66181 ,  H01L29/66613 ,  H01L29/66628 ,  H01L29/66651 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/49 ,  H01L29/78654

摘要： A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter-atomic distance of main constituent element of the amorphous thin film is 1.02 times or more of an average inter-atomic distance of the elements in single crystal, and crystallization energy is applied to the amorphous thin film to perform solid phase growth to thereby form a single crystal. In another embodiment of the present invention, an amorphous semiconductor thin film is formed on a substrate or an insulating film such that an average inter-atomic distance distribution of main constituent element of the film substantially coincides with an average inter-atomic distance distribution of the element in a single crystal, and crystallization energy is applied to the amorphous semiconductor thin film to cause solid phase growth to thereby form a single crystalline semiconductor thin film.