专利检索 cpc:"H01L2224/95121" 第 1 页

1.

发明授权
Semiconductor device and method of forming interposer and opposing build-up interconnect structure with connecting conductive TMV for electrical interconnect of FO-WLCSP 有权
标题翻译：半导体器件和形成插入件的相反的构建互连结构的方法以及连接用于FO-WLCSP的电气互连的导电TMV

公开(公告)号：US08994184B2

公开(公告)日：2015-03-31

申请号：US13887180

申请日：2013-05-03

申请人： STATS ChipPAC, Ltd.

发明人： Reza A. Pagaila

IPC分类号： H01L23/538 , H01L21/48 , H01L21/683 , H01L23/31 , H01L23/00 , H01L23/498 , H01L21/56 , H01L23/544 , H05K1/11 , H05K3/42 , H05K3/46 , H01L25/065 , H01L25/10 , H01L25/00

CPC分类号： H01L23/5384 , H01L21/486 , H01L21/561 , H01L21/563 , H01L21/6835 , H01L23/3107 , H01L23/3121 , H01L23/3128 , H01L23/49827 , H01L23/49833 , H01L23/5389 , H01L23/544 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/19 , H01L24/20 , H01L24/29 , H01L24/83 , H01L24/96 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2221/68327 , H01L2221/68345 , H01L2221/68381 , H01L2221/68386 , H01L2223/54426 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0401 , H01L2224/04042 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/06131 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/11849 , H01L2224/11901 , H01L2224/12105 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/21 , H01L2224/2105 , H01L2224/215 , H01L2224/22 , H01L2224/221 , H01L2224/29144 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48105 , H01L2224/48175 , H01L2224/48227 , H01L2224/48228 , H01L2224/73265 , H01L2224/73267 , H01L2224/83005 , H01L2224/8385 , H01L2224/92244 , H01L2224/94 , H01L2224/95001 , H01L2224/95121 , H01L2224/96 , H01L2224/97 , H01L2225/06517 , H01L2225/06548 , H01L2225/06558 , H01L2225/1023 , H01L2225/1035 , H01L2225/1041 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/181 , H05K1/115 , H05K3/429 , H05K3/4647 , H05K2201/09518 , H01L2924/01014 , H01L2924/00 , H01L2924/00014 , H01L2224/83 , H01L2224/82 , H01L2924/00012 , H01L2224/03

摘要： A semiconductor device has a substrate with a plurality of conductive vias and conductive layer formed over the substrate. A semiconductor die is mounted over a carrier. The substrate is mounted to the semiconductor die opposite the carrier. An encapsulant is deposited between the substrate and carrier around the semiconductor die. A plurality of conductive TMVs is formed through the substrate and encapsulant. The conductive TMVs protrude from the encapsulant to aid with alignment of the interconnect structure. The conductive TMVs are electrically connected to the conductive layer and conductive vias. The carrier is removed and an interconnect structure is formed over a surface of the encapsulant and semiconductor die opposite the substrate. The interconnect structure is electrically connected to the conductive TMVs. A plurality of semiconductor devices can be stacked and electrically connected through the substrate, conductive TMVs, and interconnect structure.

摘要翻译： 半导体器件具有在衬底上形成多个导电通孔和导电层的衬底。半导体管芯安装在载体上。衬底被安装到与载体相对的半导体管芯上。在半导体管芯周围的衬底和载体之间沉积密封剂。通过衬底和密封剂形成多个导电TMV。导电TMV从密封剂突出以帮助互连结构的对准。导电TMV电连接到导电层和导电通孔。移除载体并且在与衬底相对的密封剂和半导体管芯的表面上形成互连结构。互连结构电连接到导电TMV。多个半导体器件可以通过衬底层叠并电连接，导电TMV和互连结构。

2.

发明授权
Chip for multi-chip semiconductor device and method of manufacturing the same 失效
标题翻译：用于多芯片半导体器件的芯片及其制造方法

公开(公告)号：US6087719A

公开(公告)日：2000-07-11

申请号：US64984

申请日：1998-04-23

申请人： Yoshitaka Tsunashima

发明人： Yoshitaka Tsunashima

IPC分类号： H01L25/18 , H01L21/768 , H01L21/98 , H01L23/48 , H01L23/64 , H01L25/065 , H01L25/07 , H01L25/10 , H01L23/02

CPC分类号： H01L25/50 , H01L21/76898 , H01L23/481 , H01L23/642 , H01L25/0657 , H01L2224/051 , H01L2224/05573 , H01L2224/056 , H01L2224/16 , H01L2224/81121 , H01L2224/95121 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06589 , H01L2225/06593

摘要： A plurality of chips each having two or more alignment holes for transmitting a laser beam are stacked. The laser beam is irradiated onto the uppermost or lowermost one of the stacked chips. A photodetector detects the laser beam output from the stacked chips through the alignment holes in these chips. The positions of the chips are so controlled that the amount of the light detected by this photodetector is a maximum.

摘要翻译： 堆叠具有两个以上的用于透射激光束的对准孔的多个芯片。将激光束照射到堆叠芯片的最上面或最下面的一个。光电检测器通过这些芯片中的对准孔检测从堆叠芯片输出的激光束。芯片的位置如此被控制，使得由该光电检测器检测到的光的量是最大的。

3.

发明申请
Transfer Device and Transfer Method Thereof 审中-公开

公开(公告)号：US20180061687A1

公开(公告)日：2018-03-01

申请号：US15673688

申请日：2017-08-10

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Xiaolong HE , Zhifu LI , Zhiyuan JI , Jikai YAO

IPC分类号： H01L21/67 , B65G43/00 , B08B7/00 , H01L21/68

CPC分类号： H01L21/67144 , B08B7/0028 , B65G43/00 , H01L21/67 , H01L21/67259 , H01L21/681 , H01L24/75 , H01L24/95 , H01L25/0753 , H01L2224/75753 , H01L2224/75801 , H01L2224/75821 , H01L2224/7598 , H01L2224/95121

摘要： This disclosure provides a transfer device and a transfer method thereof. The transfer device comprises: a first machine base that carries a substrate; and at least one transfer assembly that is located above the first machine base, wherein the at least one transfer assembly comprises: a second machine base that carries a target device; a third machine base that is located above the second machine base; and a transfer head that is disposed on the third machine base for acquiring the target device from the second machine base and transferring the target device to a prescribed location on the substrate. In this disclosure, since the transfer assembly is located above the first machine base, a path that the transfer head needs to move along to complete the transfer process is shorter, thereby improving the production efficiency.

4.

发明授权
Method of manufacturing a multi-chip semiconductor device effective to improve alignment 失效
标题翻译：制造有效改善对准的多芯片半导体器件的方法

公开(公告)号：US06383837B1

公开(公告)日：2002-05-07

申请号：US09560143

申请日：2000-04-28

申请人： Yoshitaka Tsunashima

发明人： Yoshitaka Tsunashima

IPC分类号： H01L2144

CPC分类号： H01L25/50 , H01L21/76898 , H01L23/481 , H01L23/642 , H01L25/0657 , H01L2224/051 , H01L2224/05573 , H01L2224/056 , H01L2224/16 , H01L2224/81121 , H01L2224/95121 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06589 , H01L2225/06593 , H01L2924/00014

摘要： A plurality of chips each having two or more alignment holes for transmitting a laser beam are stacked. The laser beam is irradiated onto the uppermost or lowermost one of the stacked chips. A photodetector detects the laser beam output from the stacked chips through the alignment holes in these chips. The positions of the chips are so controlled that the amount of the light detected by this photodetector is a maximum.

摘要翻译： 堆叠具有两个以上的用于透射激光束的对准孔的多个芯片。将激光束照射到堆叠芯片的最上面或最下面的一个。光电检测器通过这些芯片中的对准孔检测从堆叠芯片输出的激光束。芯片的位置如此被控制，使得由该光电检测器检测到的光的量是最大的。

5.

发明申请
Semiconductor Device and Method of Forming Interposer and Opposing Build-Up Interconnect Structure with Connecting Conductive TMV for Electrical Interconnect of FO-WLCSP 有权
标题翻译：半导体器件与FO-WLCSP电互连的连接导电TMV的内插器和反向建立互连结构的方法

公开(公告)号：US20130241080A1

公开(公告)日：2013-09-19

申请号：US13887180

申请日：2013-05-03

申请人： STATS CHIPPAC, LTD.

发明人： Reza A. Pagaila

IPC分类号： H01L23/538

CPC分类号： H01L23/5384 , H01L21/486 , H01L21/561 , H01L21/563 , H01L21/6835 , H01L23/3107 , H01L23/3121 , H01L23/3128 , H01L23/49827 , H01L23/49833 , H01L23/5389 , H01L23/544 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/19 , H01L24/20 , H01L24/29 , H01L24/83 , H01L24/96 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2221/68327 , H01L2221/68345 , H01L2221/68381 , H01L2221/68386 , H01L2223/54426 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0401 , H01L2224/04042 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/06131 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/11849 , H01L2224/11901 , H01L2224/12105 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/21 , H01L2224/2105 , H01L2224/215 , H01L2224/22 , H01L2224/221 , H01L2224/29144 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48105 , H01L2224/48175 , H01L2224/48227 , H01L2224/48228 , H01L2224/73265 , H01L2224/73267 , H01L2224/83005 , H01L2224/8385 , H01L2224/92244 , H01L2224/94 , H01L2224/95001 , H01L2224/95121 , H01L2224/96 , H01L2224/97 , H01L2225/06517 , H01L2225/06548 , H01L2225/06558 , H01L2225/1023 , H01L2225/1035 , H01L2225/1041 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/181 , H05K1/115 , H05K3/429 , H05K3/4647 , H05K2201/09518 , H01L2924/01014 , H01L2924/00 , H01L2924/00014 , H01L2224/83 , H01L2224/82 , H01L2924/00012 , H01L2224/03

摘要： A semiconductor device has a substrate with a plurality of conductive vias and conductive layer formed over the substrate. A semiconductor die is mounted over a carrier. The substrate is mounted to the semiconductor die opposite the carrier. An encapsulant is deposited between the substrate and carrier around the semiconductor die. A plurality of conductive TMVs is formed through the substrate and encapsulant. The conductive TMVs protrude from the encapsulant to aid with alignment of the interconnect structure. The conductive TMVs are electrically connected to the conductive layer and conductive vias. The carrier is removed and an interconnect structure is formed over a surface of the encapsulant and semiconductor die opposite the substrate. The interconnect structure is electrically connected to the conductive TMVs. A plurality of semiconductor devices can be stacked and electrically connected through the substrate, conductive TMVs, and interconnect structure.

摘要翻译： 半导体器件具有在衬底上形成多个导电通孔和导电层的衬底。半导体管芯安装在载体上。衬底被安装到与载体相对的半导体管芯上。在半导体管芯周围的衬底和载体之间沉积密封剂。通过衬底和密封剂形成多个导电TMV。导电TMV从密封剂突出以帮助互连结构的对准。导电TMV电连接到导电层和导电通孔。移除载体并且在与衬底相对的密封剂和半导体管芯的表面上形成互连结构。互连结构电连接到导电TMV。多个半导体器件可以通过衬底层叠并电连接，导电TMV和互连结构。

6.

发明授权
Semiconductor device and method of forming interposer and opposing build-up interconnect structure with connecting conductive TMV for electrical interconnect of Fo-WLCSP 有权
标题翻译：半导体器件和形成插入件的相反的构建互连结构的方法和连接用于Fo-WLCSP的电互连的导电TMV

公开(公告)号：US08466544B2

公开(公告)日：2013-06-18

申请号：US13035669

申请日：2011-02-25

申请人： Reza A. Pagaila

发明人： Reza A. Pagaila

IPC分类号： H01L23/485 , H01L21/56

CPC分类号： H01L23/5384 , H01L21/486 , H01L21/561 , H01L21/563 , H01L21/6835 , H01L23/3107 , H01L23/3121 , H01L23/3128 , H01L23/49827 , H01L23/49833 , H01L23/5389 , H01L23/544 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/19 , H01L24/20 , H01L24/29 , H01L24/83 , H01L24/96 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2221/68327 , H01L2221/68345 , H01L2221/68381 , H01L2221/68386 , H01L2223/54426 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0401 , H01L2224/04042 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/06131 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/11849 , H01L2224/11901 , H01L2224/12105 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/21 , H01L2224/2105 , H01L2224/215 , H01L2224/22 , H01L2224/221 , H01L2224/29144 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48105 , H01L2224/48175 , H01L2224/48227 , H01L2224/48228 , H01L2224/73265 , H01L2224/73267 , H01L2224/83005 , H01L2224/8385 , H01L2224/92244 , H01L2224/94 , H01L2224/95001 , H01L2224/95121 , H01L2224/96 , H01L2224/97 , H01L2225/06517 , H01L2225/06548 , H01L2225/06558 , H01L2225/1023 , H01L2225/1035 , H01L2225/1041 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/181 , H05K1/115 , H05K3/429 , H05K3/4647 , H05K2201/09518 , H01L2924/01014 , H01L2924/00 , H01L2924/00014 , H01L2224/83 , H01L2224/82 , H01L2924/00012 , H01L2224/03

摘要： A semiconductor device has a substrate with a plurality of conductive vias and conductive layer formed over the substrate. A semiconductor die is mounted over a carrier. The substrate is mounted to the semiconductor die opposite the carrier. An encapsulant is deposited between the substrate and carrier around the semiconductor die. A plurality of conductive TMVs is formed through the substrate and encapsulant. The conductive TMVs protrude from the encapsulant to aid with alignment of the interconnect structure. The conductive TMVs are electrically connected to the conductive layer and conductive vias. The carrier is removed and an interconnect structure is formed over a surface of the encapsulant and semiconductor die opposite the substrate. The interconnect structure is electrically connected to the conductive TMVs. A plurality of semiconductor devices can be stacked and electrically connected through the substrate, conductive TMVs, and interconnect structure.

摘要翻译： 半导体器件具有在衬底上形成多个导电通孔和导电层的衬底。半导体管芯安装在载体上。衬底被安装到与载体相对的半导体管芯上。在半导体管芯周围的衬底和载体之间沉积密封剂。通过衬底和密封剂形成多个导电TMV。导电TMV从密封剂突出以帮助互连结构的对准。导电TMV电连接到导电层和导电通孔。移除载体并且在与衬底相对的密封剂和半导体管芯的表面上形成互连结构。互连结构电连接到导电TMV。多个半导体器件可以通过衬底层叠并电连接，导电TMV和互连结构。

7.

发明申请
METHOD OF MANUFACTURING A MULTI-CHIP SEMICONDUCTOR DEVICE EFFECTIVE TO IMPROVE ALIGNMENT 失效
标题翻译：制造有效改善对准的多芯片半导体器件的方法

公开(公告)号：US20020028532A1

公开(公告)日：2002-03-07

申请号：US09560143

申请日：2000-04-28

发明人： Yoshitaka Tsunashima

IPC分类号： H01L021/44

CPC分类号： H01L25/50 , H01L21/76898 , H01L23/481 , H01L23/642 , H01L25/0657 , H01L2224/051 , H01L2224/05573 , H01L2224/056 , H01L2224/16 , H01L2224/81121 , H01L2224/95121 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06589 , H01L2225/06593 , H01L2924/00014

摘要： A plurality of chips each having two or more alignment holes for transmitting a laser beam are stacked. The laser beam is irradiated onto the uppermost or lowermost one of the stacked chips. A photodetector detects the laser beam output from the stacked chips through the alignment holes in these chips. The positions of the chips are so controlled that the amount of the light detected by this photodetector is a maximum.

摘要翻译： 堆叠具有两个以上的用于透射激光束的对准孔的多个芯片。将激光束照射到堆叠芯片的最上面或最下面的一个。光电检测器通过这些芯片中的对准孔检测从堆叠芯片输出的激光束。芯片的位置如此被控制，使得由该光电检测器检测到的光的量是最大的。

8.

发明申请
DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开

公开(公告)号：US20190157501A1

公开(公告)日：2019-05-23

申请号：US16004623

申请日：2018-06-11

申请人： LG Display Co., Ltd.

发明人： ChungHwan AN

IPC分类号： H01L33/00 , H01L23/544 , H01L25/075 , H01L21/683

CPC分类号： H01L33/0079 , H01L21/6835 , H01L23/544 , H01L24/97 , H01L25/0753 , H01L2221/68368 , H01L2223/54426 , H01L2223/54486 , H01L2224/83132 , H01L2224/95001 , H01L2224/95121 , H01L2224/95136 , H01L2924/12041

摘要： Disclosed are a display device and a method of manufacturing a display device. The method of a display device according to an exemplary embodiment of the present disclosure includes: a first transferring step of transferring a plurality of LEDs disposed on a wafer onto a plurality of donors; and a second transferring step of transferring the plurality of LEDs transferred onto the plurality of donors onto a display panel, in which in the second transferring step, an area where one of the plurality of donors overlaps the display panel partially overlaps an area where the other one of the plurality of donors overlaps the display panel. Therefore, the plurality of LEDs having different wavelengths is uniformly transferred to reduce a boundary caused by the difference in wavelengths and improve color uniformity.

9.

发明申请
Method for Transferring and Placing a Semiconductor Device on a Substrate 审中-公开

公开(公告)号：US20180166416A1

公开(公告)日：2018-06-14

申请号：US15836634

申请日：2017-12-08

申请人： IMEC VZW , Universiteit Gent

发明人： Maria Op de Beeck , Bjorn Vandecasteele

IPC分类号： H01L23/00 , H01L21/683

CPC分类号： H01L24/96 , H01L21/6835 , H01L23/544 , H01L24/25 , H01L24/81 , H01L24/83 , H01L24/93 , H01L24/97 , H01L29/0657 , H01L2221/68354 , H01L2224/24137 , H01L2224/24226 , H01L2224/25175 , H01L2224/29036 , H01L2224/2919 , H01L2224/30166 , H01L2224/81132 , H01L2224/818 , H01L2224/83005 , H01L2224/83132 , H01L2224/83192 , H01L2224/8338 , H01L2224/83855 , H01L2224/93 , H01L2224/95001 , H01L2224/95121 , H01L2224/96 , H01L2224/97 , H01L2924/10156 , H01L2924/10157 , H01L2924/10158 , H01L2924/1515 , H01L2924/00014 , H01L2224/82 , H01L2224/83 , H01L2224/81

摘要： An example embodiment may include a method for placing on a carrier substrate a semiconductor device. The method may include providing a semiconductor substrate comprising a rectangular shaped assist chip, which may include at least one semiconductor device surrounded by a metal-free border. The method may also include dicing the semiconductor substrate to singulate the rectangular shaped assist chip. The method may further include providing a carrier substrate having adhesive thereon. The method may additionally include transferring to and placing on the carrier substrate the rectangular shaped assist chip, thereby contacting the adhesive with the rectangular shaped assist chip at least at a location of the semiconductor device. The method may finally include singulating the semiconductor device, while remaining attached to the carrier substrate by the adhesive, by removing a part of rectangular shaped assist chip other than the semiconductor device.