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91.发明授权
公开(公告)号：US5840110A
公开(公告)日：1998-11-24
申请号：US644453
申请日：1996-05-10
IPC分类号： H01L27/10 , C04B35/622 , C23C16/448 , C23C18/12 , C30B7/00 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/92 , C09D5/00 , C09D5/24
CPC分类号： C23C16/448 , C04B35/62227 , C23C16/45561 , C23C18/1216 , C23C18/1225 , C23C18/1279 , C30B29/68 , C30B7/00 , C30B7/005 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/40 , H01L28/56 , H01L28/60 , H01L28/55
摘要： Metal alkoxycarboxylate-based liquid precursor solutions are used to form electronic devices (100) that include mixed layered superlattice materials of a type having discrete oxygen octahedral layers and collated with a superlattice-generator layer. The precursor solutions include a plurality of metal moieties in effective amounts for yielding the layered superlattice materials. These metal moieties are mixed to include an A/B portion capable of forming an A/B layer, a perovskite-like AB layer portion capable of forming a perovskite-like AB octahedral layer, and a superlattice-generator portion capable of forming the superlattice-generator layer. The precursors are deposited in liquid form upon a substrate and annealed to provide the layered superlattice materials.
摘要翻译： 使用基于金属烷氧基羧酸盐的液体前体溶液来形成电子器件（100），其包括具有离散氧八面体层并与超晶格 - 发生器层对照的类型的混合层状超晶格材料。 前体溶液包括有效量的用于产生层状超晶格材料的多个金属部分。 这些金属部分被混合以包括能够形成A / B层的A / B部分，能够形成钙钛矿型AB八面体层的类钙钛矿型AB层部分和能够形成超晶格的超晶格发生部分 发电机层。 前体以液体形式沉积在基底上并退火以提供层状超晶格材料。
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92.发明授权Photosensitive liquid precursor solutions and use thereof in making thin films 失效感光性液体前体溶液及其在制备薄膜中的应用
公开(公告)号：US5792592A
公开(公告)日：1998-08-11
申请号：US653444
申请日：1996-05-24
申请人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： G03F7/027 , C08F2/48 , C08F20/06 , C08F20/26 , C08F30/04 , C30B29/30 , C30B29/68 , G03F7/004 , G03F7/029 , G03F7/40 , H01L21/02 , H01L21/027 , H01L21/312 , H01L21/314 , H01L21/316 , G03F7/30
CPC分类号： H01L21/31691 , G03F7/0047 , H01L21/312 , H01L28/55
摘要： A photosensitive liquid solution is used to make thin films for use in integrated circuits. The photosensitive liquid solution contains a photo initiator, and solvent, and a mixture of metals bonded to free-radical-susceptible monomers. The metals are mixed in amounts corresponding to the desired stoichiometry of a metal oxide thin film that derives from the. The photosensitive liquid solution is applied to a substrate, soft baked, and exposed to ultraviolet radiation under a photo mask. The ultraviolet radiation patterns the soft-baked film through a free radical polymerization chain reaction. A solvent etch is used to remove the unpolymerized portion of the polymerized film. The remaining thin film pattern is annealed to provide a patterned metal oxide film.
摘要翻译： 使用感光性液体溶液制造用于集成电路的薄膜。 感光性液体溶液含有光引发剂和溶剂，以及与自由基易感单体结合的金属的混合物。 金属以与从该衍生的金属氧化物薄膜的期望化学计量相对应的量混合。 将感光性液体溶液施加到基材上，软化并在光掩模下暴露于紫外线下。 紫外线辐射通过自由基聚合反应形成软烘烤膜。 使用溶剂蚀刻来除去聚合膜的未聚合部分。 将剩余的薄膜图案退火以提供图案化的金属氧化物膜。
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93.发明授权
公开(公告)号：US5784310A
公开(公告)日：1998-07-21
申请号：US810190
申请日：1997-03-03
IPC分类号： C01G35/00 , G11C11/56 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/92 , G11C11/22
CPC分类号： H01L27/11502 , G11C11/5657 , H01L21/31691 , H01L28/40 , Y10S428/901
摘要： Thin film ferroelectric materials for use in integrated memory circuits, such as FERAMS and the like, contain strontium bismuth niobium tantalate having an empirical formula SrBi.sub.2+E (Nb.sub.X Ta.sub.2-X)O.sub.9+3E/2, wherein E is a number representing an excess amount of bismuth ranging from zero to 2; and X is a number representing an excess amount of niobium ranging from 0.01 to 0.9. The thin films demonstrate an exceptional resistance to polarization imprinting when challenged with unidirectional voltage pulses.
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公开(公告)号：US5654456A
公开(公告)日：1997-08-05
申请号：US482766
申请日：1995-06-07
IPC分类号： C01B13/32 , C01F11/04 , C01F17/00 , C01G23/00 , C01G29/00 , C01G33/00 , C01G35/00 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108 , H01L27/115 , C07F7/28 , C07F3/00 , C07B35/48
CPC分类号： C23C16/4558 , C04B35/4682 , C04B35/6264 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1275 , C23C18/14 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , C04B2235/3213 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3243 , C04B2235/3268 , C04B2235/441 , C04B2235/449 , C04B2235/72 , H01L28/55
摘要： A first metal, an alcohol, and a carboxylic acid are reacted to form a metal alkoxycarboxylate which is then reacted with an alkoxide and/or a carboxylate of a second metal to form a precursor. Alternatively, a metal carboxylate and a metal alkoxide are combined and heated to form a precursor. In either alternative, the precursor includes all or most of the metal-oxygen-metal bonds of a desired metal oxide and a carboxylate ligand. The precursor is applied to a substrate, dried and annealed to form the metal oxide, such as BST. The metal-oxygen-metal bonds in the precursor permit the desired metal oxide to be formed from the precursor in one step, providing excellent thin films suitable for integrated circuits. The carboxylate ligand provides stability to the precursor allowing it to be stored for periods common in large scale manufacturing.
摘要翻译： 使第一金属，醇和羧酸反应形成金属烷氧基羧酸盐，然后与第二金属的醇盐和/或羧酸盐反应形成前体。 或者，将金属羧酸盐和金属醇盐组合并加热以形成前体。 在任一替代方案中，前体包括所需金属氧化物和羧酸盐配体的全部或大部分金属 - 氧 - 金属键。 将前体施加到基底上，干燥并退火以形成金属氧化物，例如BST。 前体中的金属 - 氧 - 金属键可以使所期望的金属氧化物由前体形成一个步骤，提供适用于集成电路的优良薄膜。 羧酸盐配体为前体提供了稳定性，使其能够在大规模制造中常见存储。
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公开(公告)号：US5612082A
公开(公告)日：1997-03-18
申请号：US280601
申请日：1994-07-26
IPC分类号： C23C18/12 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , C07F19/00 , B05D5/12
CPC分类号： H01L27/11502 , C23C16/45561 , C23C18/1216 , C23C18/1225 , C23C18/1279 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L28/56 , H01L28/60 , H01L28/55
摘要： Metals are reacted in a first solvent, such as 2-methoxyethanol, to form an initial precursor comprising metal-oxide compounds dissolved in the first solvent. A second solvent, such as xylene, that does not react with the metal is added to the solution and the solution heated to distill away the first solvent and form a final precursor. The final precursor is spin-coated on an integrated circuit substrate then dried and annealed to form a thin film of a metal oxide. For metal oxides including bismuth, the bismuth precursor is added to a cold initial precursor and the final precursor is not heated after the bismuth precursor is added. The second solvent wets the substrate better than the first solvent and has a better viscosity for spin-coating, thus resulting in a denser thin film with fewer imperfections.
摘要翻译： 金属在第一溶剂如2-甲氧基乙醇中反应以形成包含溶解在第一溶剂中的金属氧化物化合物的初始前体。 将不与金属反应的第二溶剂（例如二甲苯）加入到溶液中，并将溶液加热以蒸馏掉第一溶剂并形成最终的前体。 将最终的前体旋涂在集成电路基板上，然后干燥并退火以形成金属氧化物的薄膜。 对于包括铋的金属氧化物，将铋前体加入到冷的初始前体中，并且在添加铋前体之后，最终的前体不被加热。 第二溶剂比第一溶剂润湿底物，并且具有更好的旋涂粘度，因此导致具有较少缺陷的更致密的薄膜。
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公开(公告)号：US5514822A
公开(公告)日：1996-05-07
申请号：US132744
申请日：1993-10-06
IPC分类号： C01B13/32 , C01F11/04 , C01F17/00 , C01G23/00 , C01G29/00 , C01G33/00 , C01G35/00 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108 , H01L27/115 , C07F19/00 , C07F5/00 , B05D3/02 , B05D5/12
CPC分类号： C23C16/4558 , C04B35/4682 , C04B35/6264 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1275 , C23C18/14 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , C04B2235/3213 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3243 , C04B2235/3268 , C04B2235/441 , C04B2235/449 , C04B2235/72 , H01L28/55
摘要： A first metal, an alcohol, and a carboxylic acid are reacted to form a metal alkoxycarboxylate which is then reacted with an alkoxide and/or a carboxylate of a second metal to form a precursor. Alternatively, a metal carboxylate and a metal alkoxide are combined and heated to form a precursor. In either alternative, the precursor includes all or most of the metal-oxygen-metal bonds of a desired metal oxide and a carboxylate ligand. The precursor is applied to a substrate, dried and annealed to form the metal oxide, such as BST. The metal-oxygen-metal bonds in the precursor permit the desired metal oxide to be formed from the precursor in one step, providing excellent thin films suitable for integrated circuits. The carboxylate ligand provides stability to the precursor allowing it to be stored for periods common in large scale manufacturing.
摘要翻译： 使第一金属，醇和羧酸反应形成金属烷氧基羧酸盐，然后与第二金属的醇盐和/或羧酸盐反应形成前体。 或者，将金属羧酸盐和金属醇盐组合并加热以形成前体。 在任一替代方案中，前体包括所需金属氧化物和羧酸盐配体的全部或大部分金属 - 氧 - 金属键。 将前体施加到基底上，干燥并退火以形成金属氧化物，例如BST。 前体中的金属 - 氧 - 金属键可以使所期望的金属氧化物由前体形成一个步骤，提供适用于集成电路的优良薄膜。 羧酸盐配体为前体提供了稳定性，使其能够在大规模制造中常见存储。
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97.发明授权
公开(公告)号：US5423285A
公开(公告)日：1995-06-13
申请号：US981133
申请日：1992-11-24
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C01G35/00 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C26/02 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792 , H01L41/24 , H05K3/10 , C30B25/02
CPC分类号： H01L27/10805 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C26/02 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/316 , H01L41/318 , H01L28/55 , H05K3/105
摘要： A precursor comprising a metal 2-ethylhexanoate in a xylenes solvent is applied to an integrated circuit wafer. The wafer is baked to dry the precursor, annealed to form a layered superlattice material on the wafer, then the integrated circuit is completed. If the metal is titanium, the precursor comprises titanium 2-methoxyethoxide having at least a portion of its 2-methoxyethoxide ligands replaced by 2-ethylhexanoate. If the metal is a highly electropositive element, the solvent comprises 2-methoxyethanol. If the metal is lead, bismuth, thallium, or antimony, 1% to 75% excess metal is included in the precursor to account for evaporation of the oxide during baking and annealing.
摘要翻译： 将包含二甲苯溶剂中的2-乙基己酸金属的前体施加到集成电路晶片。 将晶片烘烤以干燥前体，退火以在晶片上形成层状超晶格材料，然后完成集成电路。 如果金属是钛，前体包括其2-甲氧基乙醇化物配体的至少一部分被2-乙基己酸酯取代的2-甲氧基乙氧基钛。 如果金属是高电中性元素，则溶剂包括2-甲氧基乙醇。 如果金属是铅，铋，铊或锑，则前体中含有1％至75％的过量金属，以便在焙烧和退火过程中氧化物的蒸发。
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公开(公告)号：US5316579A
公开(公告)日：1994-05-31
申请号：US877749
申请日：1992-05-04
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C26/02 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L41/24 , H05K3/10 , B05C11/04
CPC分类号： C23C16/4558 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C26/02 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L41/316 , H01L28/55 , H05K3/105 , Y10S505/734 , Y10S505/741 , Y10S505/786 , Y10S505/826
摘要： A method and apparatus are disclosed for generating fine mists of liquids using a rotating turbine blade disposed within an enclosure. A mixture of a liquid and a carrier gas are flowed into the enclosure such that it immediately impacts on the rotating turbine blade disposed near a lower end of the enclosure, and the resulting mist is withdrawn under vacuum near an upper end of the enclosure. A method and apparatus are also disclosed for chemical vapor deposition of thin films of complex chemical compounds using the discussed mists.
摘要翻译： 公开了一种用于使用设置在外壳内的旋转涡轮叶片产生细液体的方法和装置。 液体和载体气体的混合物流入外壳，使得其立即冲击设置在外壳下端附近的旋转涡轮叶片，并且所得雾在外壳附近的真空附近被抽出。 还公开了使用所讨论的薄膜化学气相沉积复合化学化合物薄膜的方法和装置。
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公开(公告)号：US06203619B1
公开(公告)日：2001-03-20
申请号：US09179121
申请日：1998-10-26
申请人： Larry D. McMillan
发明人： Larry D. McMillan
IPC分类号： C23C1600
CPC分类号： H01L21/6719 , H01L21/67196
摘要： An apparatus and method are disclosed for fabricating thin films for use in an active component of an integrated circuit by the use of an assembly line type process. A plurality of substrate stations are located on a platen which is rotated to move each station sequentially between a misted deposition device, a drying device, and a solidification device. The misted deposition device includes a mist showerhead in a movable housing. The mist showerhead separates a velocity reduction chamber from a deposition chamber.
摘要翻译： 公开了一种用于通过使用装配线型工艺制造用于集成电路的有源部件的薄膜的装置和方法。 多个基板台位于压板上，该台板被旋转以在雾化的沉积装置，干燥装置和固化装置之间依次移动每个工位。 雾化的沉积装置在可动壳体中包括喷雾头。 雾喷头将减速室与沉积室分开。
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公开(公告)号：US3986897A
公开(公告)日：1976-10-19
申请号：US510532
申请日：1974-09-30
IPC分类号： C23C22/68 , H01L21/316 , H01L21/321 , C23F7/06
CPC分类号： H01L21/321 , C23C22/68 , H01L21/31683 , Y10S438/937
摘要： A method of surface treating aluminum, particularly aluminum metallization for semiconductors, which includes subjecting the aluminum surface to be treated with fuming nitric acid for one to ten minutes at room temperature. Following cleaning, the surface is subjected to boiling water for 5 to 15 minutes. The foregoing treatment appears to form a boehmite (AlO(OH)) layer on the surface of the aluminum, thereby substantially eliminating hillocking.
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