利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

353 条记录 (耗时 0.035 秒)

    Process for preparing guanidine
    91.
    发明授权
    Process for preparing guanidine 失效
    制备胍的方法

    公开(公告)号：US4157348A

    公开(公告)日：1979-06-05

    申请号：US888613

    申请日：1978-03-21

    申请人： Hiroshi Ono ,  Shigeru Inoue

    发明人： Hiroshi Ono ,  Shigeru Inoue

    IPC分类号： C07C67/00 ,  C07C239/00 ,  C07C273/04 ,  C07C273/16 ,  C07C279/02 ,  C07C129/00

    CPC分类号： C07C273/04 ,  C07C273/16 ,  Y02P20/142

    摘要： A process is described for preparing guanidine by separating guanidine from a process stream obtained in a urea synthesis process, wherein ammonia and carbon dioxide are reacted at a high temperature and a high pressure. The process stream includes a urea synthesis effluent from a urea synthesis zone, a solution obtained by separating unreacted materials from the effluent, a concentrate of the solution or a mother liquor derived from a urea crystallization zone.

    摘要翻译： 描述了通过从尿素合成过程中获得的工艺流中分离出胍来制备胍的方法，其中氨和二氧化碳在高温和高压下反应。 工艺流包括来自尿素合成区的脲合成流出物，通过从流出物中分离未反应物质，溶液浓缩物或衍生自脲结晶区的母液获得的溶液。

    Herbicide composition
    92.
    发明授权
    Herbicide composition 失效
    除草剂组成

    公开(公告)号：US3977861A

    公开(公告)日：1976-08-31

    申请号：US511372

    申请日：1974-10-02

    申请人： Yuji Kawamura ,  Hiroshi Ono

    发明人： Yuji Kawamura ,  Hiroshi Ono

    IPC分类号： A01N43/824 ,  A01N9/22 ,  A01N9/14

    CPC分类号： A01N43/82

    摘要： A synergistic herbicide composition containing 2-tertiary-butyl-4-(2,4-dichloro-5-isopropyloxyphenyl)-5-oxo-1,3,4-oxadiazoline and 1,1,1-trifluoro-4'-(phenylsulfonyl) methanesulfono-O-toluidine as the active components.

    摘要翻译： 含有2-叔丁基-4-（2,4-二氯-5-异丙氧基苯基）-5-氧代-1,3,4-恶二唑啉和1,1,1-三氟-4' - （ 苯磺酰基）甲磺酰基 - 邻甲苯胺作为活性成分。

    Nuclear reactor power monitor
    94.
    发明授权
    Nuclear reactor power monitor 有权
    核反应堆功率监视器

    公开(公告)号：US09177676B2

    公开(公告)日：2015-11-03

    申请号：US13697950

    申请日：2011-05-11

    申请人： Yutaka Takeuchi ,  Hiroshi Ono ,  Kazuki Yano

    发明人： Yutaka Takeuchi ,  Hiroshi Ono ,  Kazuki Yano

    IPC分类号： G21C17/00 ,  G21C17/10 ,  G21D3/00

    CPC分类号： G21C17/00 ,  G21C17/10 ,  G21D3/001 ,  G21D2003/005 ,  Y02E30/40

    摘要： Provide a nuclear reactor power monitoring technology for enhancing the monitoring accuracy and reliability in nuclear thermal hydraulic stability.A power monitor 30 includes a first calculation unit 42,52 configured to calculate a first stability index based on time series data indicating power oscillation in nuclear instrumentation signals outputted from a plurality of nuclear instrumentation detectors 31; a first determination unit 44,53 configured to compare the first stability index and a first reference value and determine whether nuclear thermal hydraulic stability of the reactor core is stable or deteriorated; a second calculation unit 46,54 configured to calculate a second stability index of the reactor core based on the time series data when the deteriorated state is determined in the first determination unit 44,53; and a second determination unit 47,55 configured to compare the second stability index and a second reference value and determine whether to perform suppressing operation of the power oscillation.

    摘要翻译： 提供核反应堆功率监测技术，提高核热液压稳定性的监测精度和可靠性。 功率监视器30包括第一计算单元42,52，其被配置为基于表示从多个核仪器检测器31输出的核仪器信号中的功率振荡的时间序列数据来计算第一稳定性指标; 第一确定单元44,53，被配置为比较第一稳定性指数和第一参考值，并确定反应堆堆芯的核热液压稳定性是否稳定或劣化; 第二计算单元46,54，被配置为当在第一确定单元44,53中确定恶化状态时，基于时间序列数据计算反应堆堆芯的第二稳定性指数; 以及第二确定单元47,55，被配置为比较第二稳定性指标和第二参考值，并确定是否执行功率振荡的抑制操作。

    Polishing agent for copper polishing and polishing method using same
    96.
    发明授权
    Polishing agent for copper polishing and polishing method using same 有权
    抛光剂用于铜抛光和抛光方法使用

    公开(公告)号：US08859429B2

    公开(公告)日：2014-10-14

    申请号：US13412893

    申请日：2012-03-06

    申请人： Hiroshi Ono ,  Takashi Shinoda ,  Yuuhei Okada

    发明人： Hiroshi Ono ,  Takashi Shinoda ,  Yuuhei Okada

    IPC分类号： H01L21/302 ,  C09G1/02 ,  C09K13/06 ,  B24B37/04 ,  C09K3/14 ,  H01L21/321 ,  H01L21/768

    CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/7684 ,  H01L21/76898

    摘要： A polishing agent for copper polishing, comprising (A) an inorganic acid with divalent or greater valence, (B) an amino acid, (C) a protective film-forming agent, (D) an abrasive, (E) an oxidizing agent and (F) water, wherein the content of the component (A) is at least 0.08 mol/kg, the content of the component (B) is at least 0.20 mol/kg, the content of the component (C) is at least 0.02 mol/kg, and either or both of the following conditions (i) and (ii) are satisfied. (i): The proportion of the content of the component (A) with respect to the content of the component (C) is 2.00 or greater. (ii): It further comprises (G) at least one kind selected from among organic acids and their acid anhydrides.

    摘要翻译： 一种用于铜抛光的抛光剂，包括（A）二价或更高价的无机酸，（B）氨基酸，（C）保护性成膜剂，（D）研磨剂，（E）氧化剂和 （F）水，其中组分（A）的含量为至少0.08mol / kg，组分（B）的含量至少为0.20mol / kg，组分（C）的含量至少为0.02 mol / kg，满足以下条件（i）和（ii）中的任一个或两者。 （i）：成分（A）的含量相对于成分（C）的含量的比例为2.00以上。 （ii）：其还包含（G）选自有机酸及其酸酐中的至少一种。

    Piezoelectric element fitting structure and head suspension
    97.
    发明授权
    Piezoelectric element fitting structure and head suspension 有权
    压电元件接头结构和头悬挂

    公开(公告)号：US08754575B2

    公开(公告)日：2014-06-17

    申请号：US13235951

    申请日：2011-09-19

    申请人： Yoichi Ikeji ,  Hiroshi Ono

    发明人： Yoichi Ikeji ,  Hiroshi Ono

    IPC分类号： H01L41/053

    CPC分类号： G11B5/4873 ,  H01L41/053

    摘要： A fitting structure for fitting a piezoelectric element to an actuator base that includes an opening that formed in the actuator base and accommodates the piezoelectric element, a receiver that inwardly protrudes from an inner circumferential edge of the opening and receives the piezoelectric element, a hole defined by an inner end of the receiver and communicates with the opening, a protrusion that protrudes from the inner end of the receiver onto the hole and faces the piezoelectric element through the hole, an adhesive part filled in a space defined by the piezoelectric element, the inner circumferential edge, and the receiver and is solidified in the space to adhere the piezoelectric element to the inner circumferential edge and the receiver, and a stopper formed on one of the receiver and protrusion and stops a capillary phenomenon of the adhesive between the piezoelectric element and the receiver and protrusion.

    摘要翻译： 一种用于将压电元件装配到致动器基座的装配结构，该致动器基座包括形成在致动器基座中并容纳压电元件的开口，从开口的内周边缘向内突出并接收压电元件的接收器， 通过所述接收器的内端与所述开口连通，从所述接收器的内端突出到所述孔上且通过所述孔面对所述压电元件的突起，填充在由所述压电元件限定的空间中的粘合部， 内圆周边缘和接收器，并且在空间中固化以将压电元件粘附到内周边缘和接收器，以及形成在接收器和突起中的一个上的止动件，并且阻止压电元件之间的粘合剂的毛细现象 和接收器和突起。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    98.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20130328055A1

    公开(公告)日：2013-12-12

    申请号：US13724007

    申请日：2012-12-21

    申请人： Jumpei TAJIMA ,  Kotaro Zaima ,  Shigeya Kimura ,  Hiroshi Ono ,  Shinji Yamada ,  Satoshi Mitsugi ,  Naoharu Sugiyama ,  Shinya Nunoue

    发明人： Jumpei TAJIMA ,  Kotaro Zaima ,  Shigeya Kimura ,  Hiroshi Ono ,  Shinji Yamada ,  Satoshi Mitsugi ,  Naoharu Sugiyama ,  Shinya Nunoue

    IPC分类号： H01L33/40

    CPC分类号： H01L33/40 ,  H01L33/14 ,  H01L33/22 ,  H01L33/38

    摘要： According to one embodiment, a semiconductor light emitting device includes first and second electrodes, first, second and third semiconductor layers, and a light emitting layer. The first semiconductor layer of a first conductivity type is provided on the first electrode. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer of a second conductivity type is provided on the light emitting layer. The third semiconductor layer with low impurity concentration is provided on a part of the second semiconductor layer. The second electrode includes a pad section and a narrow wire section. The pad section is provided on the third semiconductor layer. The narrow wire section extends out from the pad section and includes an extending portion extending along a plane perpendicular to a stacking direction. The narrow wire section is in contact with the second semiconductor layer.

    摘要翻译： 根据一个实施例，半导体发光器件包括第一和第二电极，第一，第二和第三半导体层以及发光层。 第一导电类型的第一半导体层设置在第一电极上。 发光层设置在第一半导体层上。 第二导电类型的第二半导体层设置在发光层上。 具有低杂质浓度的第三半导体层设置在第二半导体层的一部分上。 第二电极包括焊盘部分和窄线部分。 焊盘部设置在第三半导体层上。 窄线部分从焊盘部分延伸出并且包括沿垂直于堆叠方向的平面延伸的延伸部分。 窄线部分与第二半导体层接触。