公开(公告)号：US06524905B2

公开(公告)日：2003-02-25

申请号：US09903316

申请日：2001-07-11

申请人： Shintaro Yamamichi ,  Toru Mori ,  Akinobu Shibuya ,  Takao Yamazaki ,  Yuzo Shimada

发明人： Shintaro Yamamichi ,  Toru Mori ,  Akinobu Shibuya ,  Takao Yamazaki ,  Yuzo Shimada

IPC分类号： H01L218242

CPC分类号： H01L28/40 ,  H01L23/5223 ,  H01L24/05 ,  H01L27/0688 ,  H01L2221/68363 ,  H01L2224/04042 ,  H01L2224/4847 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00

摘要： A semiconductor device provided with a thin film capacitor having a small equivalent series inductance is provided, which can be operated at a high frequency range and contributes to size reduction of the electronic devices. The semiconductor device comprises a device formed on a silicon substrate 1a, interlayer insulating films 3a, 3b, and 3c, wiring blocks including a power source wire block and a ground wire block, and a thin film capacitor 14 formed on an uppermost insulating layer. The thin film capacitor 14 comprises a lower electrode 6 connected to the ground wire block 4e through a contact 5d, an upper electrode 8 which is connected to the power source wire block 4d through a contact 5d, and which extends above the lower electrode 6, and a dielectric layer 7 which is inserted between the lower and the upper electrodes.

摘要翻译： 提供了具有小等效串联电感的薄膜电容器的半导体器件，其可以在高频范围下操作并且有助于电子器件的尺寸减小。 半导体器件包括形成在硅衬底1a，层间绝缘膜3a，3b和3c上的器件，包括电源线块和接地线块的布线块，以及形成在最上层绝缘层上的薄膜电容器14。 薄膜电容器14包括通过接触件5d连接到接地线块4e的下电极6，通过接触件5d连接到电源线块4d并且在下电极6上方延伸的上电极8， 以及插入在下电极和上电极之间的电介质层7。

公开(公告)号：US06225133B1

公开(公告)日：2001-05-01

申请号：US08299407

申请日：1994-09-01

申请人： Shintaro Yamamichi ,  Hirohito Watanabe ,  Yoichi Miyasaka

发明人： Shintaro Yamamichi ,  Hirohito Watanabe ,  Yoichi Miyasaka

IPC分类号： H01L2100

CPC分类号： H01L28/55 ,  H01L27/1085 ,  Y10T29/417 ,  Y10T29/43

摘要： After an interlayer insulating film is deposited on a silicon substrate, a contact hole or contact holes is or are formed at a desired position(s) and, then, after a polysilicon layer is deposited and the contact hole(s) is (are) embedded, the surface of the polysilicon layer is flattened by chemical and mechanical polishing using at least one of piperazine or colloidal silica slurry, and a barrier metal film 4 and a highly dielectric thin film 5 are deposited and processed to a desired size. Finally, an Al/TiN film 6 adapted for the upper electrode is formed. The leak current of the thin film capacitor which is obtained according to this method can be greatly reduced.

摘要翻译： 在硅衬底上沉积层间绝缘膜之后，在期望的位置形成或形成接触孔或接触孔，然后在沉积多晶硅层并且接触孔之后， 通过使用哌嗪或胶体二氧化硅浆料中的至少一种的化学和机械抛光使多晶硅层的表面平坦化，并且将阻挡金属膜4和高电介质薄膜5沉积并加工成所需的尺寸。 最后，形成适用于上电极的Al / TiN膜6。 根据该方法获得的薄膜电容器的漏电流可以大大降低。

公开(公告)号：US5366920A

公开(公告)日：1994-11-22

申请号：US229423

申请日：1994-04-12

申请人： Shintaro Yamamichi ,  Hirohito Watanabe ,  Toshiki Hashimoto ,  Toshiyuki Sakuma

发明人： Shintaro Yamamichi ,  Hirohito Watanabe ,  Toshiki Hashimoto ,  Toshiyuki Sakuma

IPC分类号： H01G4/33 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L28/40 ,  H01L28/55

摘要： A thin film capacitor which comprises a lower electrode, a dielectric film and an upper electrode is fabricated on a substrate. The lower electrode is not provided by etching process using a photoresist mask, but it is provided by providing an aperture thorough an insulating layer deposited on the substrate, and depositing a conductive film on the bottom of the aperture and connected to a lower interconnection provided on the bottom of the aperture. Consequently, no convex protrusion is found at the processed edge of the lower electrode.

摘要翻译： 在基板上制造包括下电极，电介质膜和上电极的薄膜电容器。 下部电极不是通过使用光致抗蚀剂掩模的蚀刻工艺提供的，而是通过提供沉积在基板上的绝缘层的孔，并且在孔的底部上沉积导电膜并连接到设置在其上的下部互连 孔的底部。 因此，在下电极的处理边缘处没有发现凸起。

公开(公告)号：US06818469B2

公开(公告)日：2004-11-16

申请号：US10445330

申请日：2003-05-27

申请人： Toru Mori ,  Akinobu Shibuya ,  Shintaro Yamamichi

发明人： Toru Mori ,  Akinobu Shibuya ,  Shintaro Yamamichi

IPC分类号： H01L2100

CPC分类号： H05K1/162 ,  H01L2224/04105 ,  H01L2224/32225 ,  H01L2224/73267 ,  H05K1/185 ,  H05K3/429 ,  H05K2201/0317 ,  H05K2201/09509

摘要： A thin film capacitor is provided with a substrate having a thickness equal to or more than 2 &mgr;m and equal to or less than 100 &mgr;m; a lower electrode on the substrate, which includes at least a highly elastic electrode and an anti-oxidation electrode on the highly elastic electrode; a dielectric thin film on the first lower electrode; and an upper electrode on the dielectric thin film; wherein the highly elastic electrode is made of a material having a Young's modulus higher than that of the anti-oxidation electrode.

摘要翻译： 薄膜电容器具有厚度等于或大于2μm且等于或小于100μm的基板; 所述基板上的下部电极，在所述高弹性电极上至少包括高弹性电极和抗氧化电极; 第一下电极上的电介质薄膜; 和电介质薄膜上的上电极; 其中所述高弹性电极由杨氏模量高于所述抗氧化电极的杨氏模量的材料制成。

公开(公告)号：US06292352B1

公开(公告)日：2001-09-18

申请号：US09583871

申请日：2000-05-31

申请人： Shintaro Yamamichi

发明人： Shintaro Yamamichi

IPC分类号： H01G406

CPC分类号： H01L28/60 ,  H01L21/76895

摘要： There is provided a thin film capacitor including (a) a semiconductor substrate, (b) an interlayer insulating film formed on the semiconductor substrate, (c) a contact formed throughout the interlayer insulating film such that the contact has an upper surface upwardly projecting, (d) a lower electrode formed on the interlayer insulating film such that the lower electrode covers the upper surface of the contact therewith, (e) a capacitor insulating film covering the lower electrode and the interlayer insulating film therewith, and (f) an upper electrode formed on the capacitor insulating film. The thin film capacitor prevents peeling between the contact and the lower electrode even in an annealing step.

摘要翻译： 提供一种薄膜电容器，其包括：（a）半导体衬底，（b）形成在半导体衬底上的层间绝缘膜，（c）形成在整个层间绝缘膜上的触点，使得触点具有向上突出的上表面， （d）形成在层间绝缘膜上的下电极，使得下电极覆盖其接触的上表面，（e）覆盖下电极和层间绝缘膜的电容器绝缘膜，以及（f） 电极形成在电容绝缘膜上。 即使在退火步骤中，薄膜电容器也防止接触部和下电极之间的剥离。

公开(公告)号：US5847423A

公开(公告)日：1998-12-08

申请号：US883334

申请日：1997-06-26

申请人： Shintaro Yamamichi

发明人： Shintaro Yamamichi

IPC分类号： H01L21/66 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/06 ,  H01L27/108 ,  H01L29/68

CPC分类号： H01L27/1085 ,  H01L27/0676 ,  H01L28/40

摘要： A semiconductor device having thin film capacitors and containing resistance measuring elementsis disclosed. The thin film capacitor comprises a bottom electrode, a high permittivity dielectric, and a top electrode stacked on an interlayer insulation film and at least one of a plurality of contact formed in electrical contact with the substrate at the desired position of an interlayer insulation film formed on a semiconductor substrate. The bottom electrode comprises at least two layers. A resistance measuring element consists of the same materials as those of the thin film capacitor and has the same size as that of the thin film capacitor except that the resistance measuring element comprises a first electrode, the dielectric film of high permittivity, and a second electrode stacked on the interlayer insulation film and at least one of a plurality of contacts other than the above-mentioned contact for the thin film capacitor, and the topmost layer of the first electrode and the second electrode are in contact with each other through the contact provided at a portion of the dielectric film. The resistance value of the bottom electrode of the thin film capacitor is measured using electrical path through the substrate.

摘要翻译： 公开了具有薄膜电容器并且包含电阻测量元件的半导体器件。 薄膜电容器包括底电极，高介电常数电介质和堆叠在层间绝缘膜上的顶电极以及在形成的层间绝缘膜的期望位置处形成与基板电接触的多个接触中的至少一个 在半导体衬底上。 底部电极包括至少两层。 电阻测量元件由与薄膜电容器相同的材料组成，并且具有与薄膜电容器相同的尺寸，除了电阻测量元件包括第一电极，高介电常数的电介质膜和第二电极 堆叠在层间绝缘膜上，并且除了上述用于薄膜电容器的触点之外的多个触点中的至少一个触点以及第一电极和第二电极的最上层通过所提供的触点彼此接触 在电介质膜的一部分。 薄膜电容器的底部电极的电阻值通过基板的电气路径进行测量。

公开(公告)号：US5670408A

公开(公告)日：1997-09-23

申请号：US510488

申请日：1995-08-02

申请人： Shintaro Yamamichi ,  Yoichi Miyasaka

发明人： Shintaro Yamamichi ,  Yoichi Miyasaka

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242

CPC分类号： H01L27/10852 ,  H01L28/55 ,  Y10S148/014

摘要： A thin film capacitor uses a dielectric film of high dielectric constant. A lower electrode is disposed on a contact, an interlayer insulating film is in contact with the lower electrode, a dielectric film of high dielectric constant covers the lower electrode, and an upper electrode covers the dielectric film. Thicknesses of the dielectric film at lower end portions of the lower electrode are thin but thick enough to make a leakage current value lower than a tolerable value thereof. At locations immediately below the lower electrode, the interlayer insulating film has portions whose thicknesses are larger than thicknesses of other portions thereof. The interlayer insulating film is such that, immediately below the regions of the dielectric film which are located at lower end portions of sides of the lower electrode and at which thicknesses of the dielectric film are very thin, the thicknesses of the interlayer insulating film are made larger than the rest thereof, or the dielectric film is such that lower end portions thereof are thin but thick enough to make a leakage current value lower than a tolerable value thereof. In this way, the occurrence of leakage current at the lower end portions of the lower electrode is suppressed.

摘要翻译： 薄膜电容器使用高介电常数的电介质膜。 下电极设置在触点上，层间绝缘膜与下电极接触，介电常数高的电介质膜覆盖下电极，上电极覆盖电介质膜。 下部电极的下端部的电介质膜的厚度薄，但是足够厚以使泄漏电流值低于其容许值。 在下电极正下方的位置处，层间绝缘膜具有厚度大于其它部分的厚度的部分。 层间绝缘膜在电介质膜的位于下电极侧的下端部的区域的正下方，电介质膜的厚度非常薄的情况下，形成层间绝缘膜的厚度 大于其余部分，或者电介质膜的下端部分较薄，但足够厚以使漏电流值低于容许值。 以这种方式，能够抑制下部电极的下端部的漏电流的发生。

公开(公告)号：US08749033B2

公开(公告)日：2014-06-10

申请号：US13200944

申请日：2011-10-05

申请人： Takahito Watanabe ,  Shintaro Yamamichi ,  Yoshitaka Ushiyama

发明人： Takahito Watanabe ,  Shintaro Yamamichi ,  Yoshitaka Ushiyama

IPC分类号： H01L23/552 ,  H01L21/02 ,  H01L29/82 ,  H01L31/0203

CPC分类号： H01L23/58 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/552 ,  H01L24/05 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/97 ,  H01L27/224 ,  H01L2223/54426 ,  H01L2224/0401 ,  H01L2224/16225 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/2916 ,  H01L2224/2919 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12041 ,  H01L2924/1435 ,  H01L2924/15159 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor chip includes a magnetic storage device and includes an electrode pad on a first face. The semiconductor chip is coated with a magnetic shield layer in a state in which at least the electrode pad is exposed. The semiconductor chip is mounted on an interconnect substrate through a bump. At least one of the semiconductor chip and the interconnect substrate includes a convex portion, and the bump is disposed over the convex portion.

摘要翻译： 半导体芯片包括磁存储装置，并且在第一面上包括电极焊盘。 至少在电极焊盘露出的状态下，半导体芯片被覆有磁屏蔽层。 半导体芯片通过凸块安装在互连基板上。 半导体芯片和互连基板中的至少一个包括凸部，并且凸块设置在凸部上。

公开(公告)号：US06515324B2

公开(公告)日：2003-02-04

申请号：US09942817

申请日：2001-08-30

申请人： Akinobu Shibuya ,  Shintaro Yamamichi ,  Toru Mori ,  Takao Yamazaki ,  Yuzo Shimada

发明人： Akinobu Shibuya ,  Shintaro Yamamichi ,  Toru Mori ,  Takao Yamazaki ,  Yuzo Shimada

IPC分类号： H01L27178

CPC分类号： H01L23/49827 ,  H01L23/49822 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/3011 ,  H01L2924/00

摘要： A capacitor has a lower electrode, a dielectric thin film, an upper electrode, and an insulation cover layer formed on an insulation substrate made of an organic film or a ceramic material, and through holes formed at positions corresponding to input and output pads of a semiconductor element or to input and output terminals of a semiconductor package, with electrodes for connection to input and output pads of a semiconductor element or to input and output terminals of a semiconductor package provided within through holes. In a method for mounting the capacitor, the capacitor is interposed between a flip-chip connected semiconductor element and a mounting substrate.

公开(公告)号：US5883781A

公开(公告)日：1999-03-16

申请号：US635872

申请日：1996-04-18

申请人： Shintaro Yamamichi ,  Pierre Yves Lesaicherre

发明人： Shintaro Yamamichi ,  Pierre Yves Lesaicherre

IPC分类号： H01L21/02 ,  H01L21/8242 ,  H01G4/06 ,  H01G4/20

CPC分类号： H01L27/10852 ,  H01L28/55

摘要： In a capacitor including a silicon substrate and an insulating layer formed on the silicon substrate having a contact hole, a lower electrode layer including a silicon diffusion preventing conductive layer and an oxidation resistance conductive layer, an upper electrode layer, and a high dielectric constant layer therebetween, the silicon diffusion preventing layer is located on or within the contact hole and is isolated from the high dielectric constant layer. The high dielectric constant layer is formed on an upper surface and a side surface of the oxidation resistance conductive layer.

摘要翻译： 在包括硅衬底和形成在具有接触孔的硅衬底上的绝缘层的电容器中，包括防硅扩散导电层和抗氧化电阻导电层的下电极层，上电极层和高介电常数层 其间，硅扩散防止层位于接触孔的上方或内部，并与高介电常数层隔离。 高介电常数层形成在抗氧化导电层的上表面和侧表面上。