Semiconductor device, and thin film capacitor
    5.
    发明授权
    Semiconductor device, and thin film capacitor 有权
    半导体器件和薄膜电容器

    公开(公告)号:US06524905B2

    公开(公告)日:2003-02-25

    申请号:US09903316

    申请日:2001-07-11

    IPC分类号: H01L218242

    摘要: A semiconductor device provided with a thin film capacitor having a small equivalent series inductance is provided, which can be operated at a high frequency range and contributes to size reduction of the electronic devices. The semiconductor device comprises a device formed on a silicon substrate 1a, interlayer insulating films 3a, 3b, and 3c, wiring blocks including a power source wire block and a ground wire block, and a thin film capacitor 14 formed on an uppermost insulating layer. The thin film capacitor 14 comprises a lower electrode 6 connected to the ground wire block 4e through a contact 5d, an upper electrode 8 which is connected to the power source wire block 4d through a contact 5d, and which extends above the lower electrode 6, and a dielectric layer 7 which is inserted between the lower and the upper electrodes.

    摘要翻译: 提供了具有小等效串联电感的薄膜电容器的半导体器件,其可以在高频范围下操作并且有助于电子器件的尺寸减小。 半导体器件包括形成在硅衬底1a,层间绝缘膜3a,3b和3c上的器件,包括电源线块和接地线块的布线块,以及形成在最上层绝缘层上的薄膜电容器14。 薄膜电容器14包括通过接触件5d连接到接地线块4e的下电极6,通过接触件5d连接到电源线块4d并且在下电极6上方延伸的上电极8, 以及插入在下电极和上电极之间的电介质层7。

    WIRING STRUCTURE AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    WIRING STRUCTURE AND MANUFACTURING METHOD THEREOF 审中-公开
    接线结构及其制造方法

    公开(公告)号:US20150034373A1

    公开(公告)日:2015-02-05

    申请号:US14379420

    申请日:2013-02-13

    IPC分类号: H05K3/12 H05K1/03 H05K1/09

    摘要: A wiring structure includes a substrate, a convexoconcave absorption layer including a convexoconcave portion on the substrate, a conductive layer pattern on at least a concave portion of the convexoconcave absorption layer, and an insulating layer pattern over the conductive layer pattern and the convexoconcave absorption layer, on at least the concave portion. This configuration provides a wiring structure and a manufacturing method thereof which enable to form fine multilayer wiring using microcontact printing or the like.

    摘要翻译: 布线结构包括基板,在基板上包括凸凹部的凸凹陷波吸收层,凹凸吸收层的至少凹部的导电层图案,以及导电层图案和凹凸吸收层之上的绝缘层图案 至少在凹部上。 这种结构提供了使用微接触印刷等形成精细多层布线的布线结构及其制造方法。

    RADIO MODULE AND MANUFACTURING METHOD THEREFOR
    9.
    发明申请
    RADIO MODULE AND MANUFACTURING METHOD THEREFOR 审中-公开
    无线电模块及其制造方法

    公开(公告)号:US20130012145A1

    公开(公告)日:2013-01-10

    申请号:US13636576

    申请日:2011-03-15

    IPC分类号: H04B1/38

    摘要: Provided is a radio module that includes a radio signal connection portion having a low insertion loss and high reliability.This radio module includes a first wiring substrate 1, and a second wiring substrate 2 which is located opposite to a first face 1a of the first wiring substrate 1. Further, at least one through hole 3 having an inner wall formed of a conductive material is provided inside the second wiring substrate. Moreover, at least one hollow pillar 4 formed of a conductive material is provided at a position corresponding to the at least one through hole 3, on at least one of the first face 1a and a second face 2a of the second wiring substrate 2, the second face 2a being opposite to the first face 1a. Here, an axis-direction height of the at least one hollow pillar 4 formed of a conductive material is smaller than the width of a gap between the first face 1a and the second face 2a. Further, one end face of the at least one hollow pillar 4 formed of a conductive material is not fixed, and a radio signal passes through a hollow portion of the at least one pillar.

    摘要翻译: 提供一种无线电模块,其包括具有低插入损耗和高可靠性的无线电信号连接部分。 该无线电模块包括第一布线基板1和与第一布线基板1的第一面1a相对的第二布线基板2.此外,具有由导电材料形成的内壁的至少一个通孔3是 设置在第二布线基板的内部。 此外,在与第二布线基板2的第一面1a和第二面2a中的至少一个相对应的至少一个通孔3的位置处设置由导电材料形成的至少一个中空柱4, 第二面2a与第一面1a相对。 这里,由导电材料形成的至少一个中空柱4的轴向高度小于第一面1a和第二面2a之间的间隙的宽度。 此外,由导电材料形成的至少一个中空柱4的一个端面不固定,并且无线电信号通过至少一个支柱的中空部分。