公开(公告)号：US06703705B2

公开(公告)日：2004-03-09

申请号：US09996054

申请日：2001-11-28

申请人： Takao Yamazaki ,  Toru Mori ,  Akinobu Shibuya ,  Shintaro Yamamichi ,  Yuzo Shimada

发明人： Takao Yamazaki ,  Toru Mori ,  Akinobu Shibuya ,  Shintaro Yamamichi ,  Yuzo Shimada

IPC分类号： H01L2352

CPC分类号： H01L24/81 ,  H01L23/50 ,  H01L23/642 ,  H01L24/73 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/30105 ,  H01L2924/30107

摘要： A semiconductor device has an LSI device provided with a plurality of power supply line connection pads and ground line connection pad in a peripheral edge part of a circuit-formation surface, metal foil leads 5 electrically connected to each of the pads and adhered to the LSI device via an insulation layer, and decoupling capacitors mounted on one surface of the metal foil leads.

摘要翻译： 半导体器件具有在电路形成面的周边部分设置有多个电源线连接焊盘和接地线连接焊盘的LSI器件，电连接到每个焊盘并粘附到LSI的金属箔引线5 通过绝缘层的器件，以及安装在金属箔引线的一个表面上的去耦电容器。

公开(公告)号：US06524905B2

公开(公告)日：2003-02-25

申请号：US09903316

申请日：2001-07-11

申请人： Shintaro Yamamichi ,  Toru Mori ,  Akinobu Shibuya ,  Takao Yamazaki ,  Yuzo Shimada

发明人： Shintaro Yamamichi ,  Toru Mori ,  Akinobu Shibuya ,  Takao Yamazaki ,  Yuzo Shimada

IPC分类号： H01L218242

CPC分类号： H01L28/40 ,  H01L23/5223 ,  H01L24/05 ,  H01L27/0688 ,  H01L2221/68363 ,  H01L2224/04042 ,  H01L2224/4847 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00

摘要： A semiconductor device provided with a thin film capacitor having a small equivalent series inductance is provided, which can be operated at a high frequency range and contributes to size reduction of the electronic devices. The semiconductor device comprises a device formed on a silicon substrate 1a, interlayer insulating films 3a, 3b, and 3c, wiring blocks including a power source wire block and a ground wire block, and a thin film capacitor 14 formed on an uppermost insulating layer. The thin film capacitor 14 comprises a lower electrode 6 connected to the ground wire block 4e through a contact 5d, an upper electrode 8 which is connected to the power source wire block 4d through a contact 5d, and which extends above the lower electrode 6, and a dielectric layer 7 which is inserted between the lower and the upper electrodes.

摘要翻译： 提供了具有小等效串联电感的薄膜电容器的半导体器件，其可以在高频范围下操作并且有助于电子器件的尺寸减小。 半导体器件包括形成在硅衬底1a，层间绝缘膜3a，3b和3c上的器件，包括电源线块和接地线块的布线块，以及形成在最上层绝缘层上的薄膜电容器14。 薄膜电容器14包括通过接触件5d连接到接地线块4e的下电极6，通过接触件5d连接到电源线块4d并且在下电极6上方延伸的上电极8， 以及插入在下电极和上电极之间的电介质层7。

公开(公告)号：US06949815B2

公开(公告)日：2005-09-27

申请号：US10746603

申请日：2003-12-23

申请人： Takao Yamazaki ,  Toru Mori ,  Akinobu Shibuya ,  Shintaro Yamamichi ,  Yuzo Shimada

发明人： Takao Yamazaki ,  Toru Mori ,  Akinobu Shibuya ,  Shintaro Yamamichi ,  Yuzo Shimada

IPC分类号： H05K3/34 ,  H01L21/60 ,  H01L21/822 ,  H01L23/12 ,  H01L23/50 ,  H01L23/64 ,  H01L27/04 ,  H01L23/52 ,  H01L23/32 ,  H01L23/48 ,  H01G9/05

CPC分类号： H01L24/81 ,  H01L23/50 ,  H01L23/642 ,  H01L24/73 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/30105 ,  H01L2924/30107

摘要： A semiconductor device has an LSI device provided with a plurality of power supply line connection pads and ground line connection pad in a peripheral edge part of a circuit-formation surface, metal foil leads 5 electrically connected to each of the pads and adhered to the LSI device via an insulation layer, and decoupling capacitors mounted on one surface of the metal foil leads.

摘要翻译： 半导体器件具有在电路形成面的周边部分设置有多个电源线连接焊盘和接地线连接焊盘的LSI器件，电连接到每个焊盘并粘附到LSI的金属箔引线5 通过绝缘层的器件，以及安装在金属箔引线的一个表面上的去耦电容器。

公开(公告)号：US06515324B2

公开(公告)日：2003-02-04

申请号：US09942817

申请日：2001-08-30

申请人： Akinobu Shibuya ,  Shintaro Yamamichi ,  Toru Mori ,  Takao Yamazaki ,  Yuzo Shimada

发明人： Akinobu Shibuya ,  Shintaro Yamamichi ,  Toru Mori ,  Takao Yamazaki ,  Yuzo Shimada

IPC分类号： H01L27178

CPC分类号： H01L23/49827 ,  H01L23/49822 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/3011 ,  H01L2924/00

摘要： A capacitor has a lower electrode, a dielectric thin film, an upper electrode, and an insulation cover layer formed on an insulation substrate made of an organic film or a ceramic material, and through holes formed at positions corresponding to input and output pads of a semiconductor element or to input and output terminals of a semiconductor package, with electrodes for connection to input and output pads of a semiconductor element or to input and output terminals of a semiconductor package provided within through holes. In a method for mounting the capacitor, the capacitor is interposed between a flip-chip connected semiconductor element and a mounting substrate.

公开(公告)号：US06818469B2

公开(公告)日：2004-11-16

申请号：US10445330

申请日：2003-05-27

申请人： Toru Mori ,  Akinobu Shibuya ,  Shintaro Yamamichi

发明人： Toru Mori ,  Akinobu Shibuya ,  Shintaro Yamamichi

IPC分类号： H01L2100

CPC分类号： H05K1/162 ,  H01L2224/04105 ,  H01L2224/32225 ,  H01L2224/73267 ,  H05K1/185 ,  H05K3/429 ,  H05K2201/0317 ,  H05K2201/09509

摘要： A thin film capacitor is provided with a substrate having a thickness equal to or more than 2 &mgr;m and equal to or less than 100 &mgr;m; a lower electrode on the substrate, which includes at least a highly elastic electrode and an anti-oxidation electrode on the highly elastic electrode; a dielectric thin film on the first lower electrode; and an upper electrode on the dielectric thin film; wherein the highly elastic electrode is made of a material having a Young's modulus higher than that of the anti-oxidation electrode.

摘要翻译： 薄膜电容器具有厚度等于或大于2μm且等于或小于100μm的基板; 所述基板上的下部电极，在所述高弹性电极上至少包括高弹性电极和抗氧化电极; 第一下电极上的电介质薄膜; 和电介质薄膜上的上电极; 其中所述高弹性电极由杨氏模量高于所述抗氧化电极的杨氏模量的材料制成。

公开(公告)号：US20100044089A1

公开(公告)日：2010-02-25

申请号：US12529378

申请日：2008-02-28

申请人： Akinobu Shibuya ,  Yasuhiro Ishii ,  Toru Mori ,  Koichi Takemura

发明人： Akinobu Shibuya ,  Yasuhiro Ishii ,  Toru Mori ,  Koichi Takemura

IPC分类号： H05K1/16 ,  H05K3/30

CPC分类号： H05K1/162 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/50 ,  H01L27/016 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/15311 ,  H05K3/4614 ,  H05K2201/09309 ,  H05K2201/09509 ,  H05K2201/096 ,  H05K2201/09763 ,  H05K2201/10378 ,  H05K2203/061 ,  Y10T29/4913 ,  H01L2924/00014

摘要： An interposer integrated with capacitors (100) includes a plug substrate (10) in which via-plugs (12) is formed, and a capacitor substrate (20) in which capacitors are formed. The capacitor substrate (20) includes a substrate body (21), capacitors (22) formed on the main surface of the substrate body, a cover insulating film (25) that covers the capacitors, a terminal electrodes (26) connected to the electrodes of the capacitor and formed on the cover insulating film, electrode pads (24) formed on the rear surface of the substrate body, and via-plugs 23 connecting together the terminal electrodes and electrode pads. The plug substrate (10) includes a substrate body (11), and electrode pads (13) formed on the main surface of the substrate body corresponding to the terminal electrodes of the capacitor substrate, and via-plugs (12) penetrating the substrate body and connected to the electrode pads.

摘要翻译： 与电容器（100）集成的插入器包括其中形成有通孔（12）的插头基板（10）和形成有电容器的电容器基板（20）。 电容器基板（20）包括基板主体（21），形成在基板主体的主表面上的电容器（22），覆盖电容器的覆盖绝缘膜（25），与电极连接的端子电极 的电容器，形成在覆盖绝缘膜上，形成在基板主体的后表面上的电极焊盘（24）以及将端子电极和电极焊盘连接在一起的通孔塞23。 插头基板（10）包括基板主体（11），和形成在基板主体的与主电极基板的端子电极对应的主面上的电极焊盘（13）以及穿过基板体的通孔（12） 并连接到电极焊盘。

公开(公告)号：US07075644B2

公开(公告)日：2006-07-11

申请号：US10629359

申请日：2003-07-29

申请人： Toshikazu Yamamoto ,  Tsutomu Kaneko ,  Toru Mori

发明人： Toshikazu Yamamoto ,  Tsutomu Kaneko ,  Toru Mori

IPC分类号： G01F3/28

CPC分类号： G02B27/28 ,  G01J3/02 ,  G01J3/0224 ,  G01J2003/1286 ,  G02B5/3083 ,  G02B27/283

摘要： A depolarizer includes a second birefringent plate having a thickness which continuously changes in a direction of an optical axis of the second birefringent plate; and a third birefringent plate having a thickness which continuously changes in a direction of 45 degree with respect to an optical axis of the third birefringent plate; wherein the second birefringent plate is stuck on the third birefringent plate so that a reduction direction of the thickness of the second birefringent plate and a reduction direction of the thickness of the third birefringent plate are opposite to each other.

摘要翻译： 消偏振器包括具有在第二双折射板的光轴方向上连续变化的厚度的第二双折射板; 以及第三双折射板，其厚度相对于所述第三双折射板的光轴在45度的方向上连续变化; 其中所述第二双折射板粘附在所述第三双折射板上，使得所述第二双折射板的厚度的减小方向和所述第三双折射板的厚度的减小方向彼此相反。

公开(公告)号：US06239945B1

公开(公告)日：2001-05-29

申请号：US09413241

申请日：1999-10-07

申请人： Tadashi Inoue ,  Ko ichi Nakao ,  Toru Mori

发明人： Tadashi Inoue ,  Ko ichi Nakao ,  Toru Mori

IPC分类号： G11B15675

CPC分类号： G11B17/046

摘要： A disk recording or playback device comprises a holder pivoted to a chassis and reciprocatingly movable between an open position in which the holder is raised for inserting thereinto a cartridge containing a disk and a closed position in which the holder is laid on the chassis, a kickout mechanism having an engaging piece engageable with the holder and biased by a spring to urge the cartridge in a direction of discharge from the holder, the kickout mechanism extending into the holder and pushable by the insertion of the cartridge against the spring when the holder is in the open position to bring the engaging piece into engagement with the holder, and a change-over lever pivotally movably provided on the chassis for releasing the kickout mechanism from engagement with the holder during the transition of the holder from the closed position to the open position. The pivot portion of the holder and a pivot portion of the change-over lever are provided on the same surface of one member mounted on the chassis.

摘要翻译： 磁盘记录或播放装置包括一个转动到底盘的保持架，并且可在打开位置之间往复运动，在打开位置中，保持器被抬起，其中插入一个容纳盘的盒和一个关闭位置，在该位置上保持器放置在底盘上， 机构，其具有与保持器接合并且被弹簧偏压以沿着从保持器排出的方向推动盒的接合件，所述止动机构延伸到保持器中并且当保持器处于保持器时通过将盒插入弹簧推动 将接合件与保持器接合的打开位置以及可枢转地可移动地设置在底架上的转换杆，用于在保持器从关闭位置转换到打开位置期间释放脱扣机构以与保持器接合 。 保持架的枢转部分和转换杆的枢转部分设置在安装在底盘上的一个构件的相同表面上。

公开(公告)号：US5861350A

公开(公告)日：1999-01-19

申请号：US873587

申请日：1997-06-12

申请人： Toru Mori ,  Tadahiko Horiguchi ,  Shinji Ito

发明人： Toru Mori ,  Tadahiko Horiguchi ,  Shinji Ito

IPC分类号： C04B35/49 ,  C04B35/493 ,  C04B35/499 ,  H01B3/12 ,  C04B35/472

CPC分类号： C04B35/499 ,  C04B35/493

摘要： A dielectric ceramic composition is herein disclosed which comprises four lead-containing perovskite compounds of (a) lead magnesium tungstate �Pb(Mg.sub.1/2 W.sub.1/2)O.sub.3 !, (b) lead nickel niobate �Pb(Ni.sub.1/3 Nb.sub.2/3)O.sub.3 !, (c) lead titanate (PbTiO.sub.3) and (d) lead zirconate (PbZrO.sub.3) as main components and which further contains an oxide of a rare earth element; and by adjusting a molar ratio of the components (a) to (d) and an amount of the oxide of the rare earth element in specific ranges, there can be obtained the dielectric ceramic composition suitable for a dielectric substance for a multilayer ceramic capacitor which has a low firing temperature, a high dielectric constant at room temperature and a low change rate of the dielectric constant to temperature.

摘要翻译： 本文公开了一种介电陶瓷组合物，其包含四种含铅的钙钛矿化合物（a）钨酸铅镁[Pb（Mg1 / 2W1 / 2）O3]，（b）铅铌酸铅[Pb（Ni1 / 3Nb2 / 3）O3 ]，（c）钛酸铅（PbTiO 3）和（d）锆酸铅（PbZrO 3）作为主要成分，并且还含有稀土元素的氧化物; 通过调整成分（a）〜（d）的摩尔比和特定范围的稀土类元素的氧化物的量，可以得到适用于多层陶瓷电容器的电介质的电介质陶瓷组合物， 具有低的焙烧温度，室温下的高介电常数和介电常数与温度的低变化率。

公开(公告)号：US5801383A

公开(公告)日：1998-09-01

申请号：US754140

申请日：1996-11-22

申请人： Hideo Wada ,  Mitsuhiro Nagashima ,  Naoki Oda ,  Tokuhito Sasaki ,  Toru Mori

发明人： Hideo Wada ,  Mitsuhiro Nagashima ,  Naoki Oda ,  Tokuhito Sasaki ,  Toru Mori

IPC分类号： G01J5/20 ,  H01L25/00 ,  G01J5/00

CPC分类号： G01J5/20

摘要： At a heat treatment temperature in a reducing atmosphere of Ar and H.sub.2, a precursory film of V.sub.2 O.sub.5 is reduced into a VO.sub.x film with the heat treatment temperature selected in a predetermined temperature range between 350 .degree. C. and 450.degree. C., both exclusive, to control a resistivity of the VO.sub.x film, where x is greater than 1.875 and less than 2.0. The VO.sub.x film is not susceptible to a metal-semiconductor phase transition inevitable in VO.sub.2 at about 70.degree. C. and is excellent for use in a bolometer-type infrared sensor. When reduced at 350.degree. C. and 450.degree. C. the resistivity and its temperature coefficient of the VO.sub.x film at room temperature are 0.5 and 0.002 .OMEGA. cm and -2.2% and 0.2% per degree Celsius.

摘要翻译： 在Ar和H2的还原气氛中的热处理温度下，将V 2 O 5的前体膜还原成VOx膜，其中热处理温度选择在350℃至450℃的预定温度范围内， 以控制VOx膜的电阻率，其中x大于1.875且小于2.0。 VOx膜不易受到在约70℃的VO2中不可避免的金属 - 半导体相变的影响，并且适用于测辐射热计型红外传感器。 当在350℃和450℃下还原时，VOx膜在室温下的电阻率及其温度系数分别为0.5和0.002欧米加厘​​米，-2.2％和0.2％摄氏度。