Transfer mask for exposure and pattern exchanging method of the same
    91.
    发明申请
    Transfer mask for exposure and pattern exchanging method of the same 有权
    转印掩模的曝光和图案交换方法相同

    公开(公告)号:US20050118516A1

    公开(公告)日:2005-06-02

    申请号:US11030963

    申请日:2005-01-10

    摘要: The present invention is a transfer mask for exposure comprising a mask portion having a plurality of cells, each of which an opening of a predetermined pattern is formed in. When one side of the plurality of cells is exposed to a charged particle beam, each of the plurality of cells is adapted to make the charged particle beam pass through itself to the other side thereof based on the pattern of the opening formed in the cell. Thus, when a substrate to be processed is arranged on the other side of the cell, the pattern of the opening formed in the cell is transferred to the substrate to be processed and hence an exposure pattern is formed on the substrate to be processed. The feature of the present invention is that a part of or all the plurality of cells can be exchanged at the mask portion.

    摘要翻译: 本发明是用于曝光的转印掩模,其包括具有多个单元的掩模部分,每个单元都形成有预定图案的开口。当多个单元的一侧暴露于带电粒子束时, 多个单元适于基于形成在单元中的开口的图案使带电粒子束自身通过其自身的另一侧。 因此,当待处理基板布置在单元的另一侧时,形成在单元中的开口的图案被转移到待处理的基板,因此在待处理的基板上形成曝光图案。 本发明的特征在于,可以在掩模部分更换多个单元的一部分或全部。

    AQUEOUS DISPERSION, AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING USED FOR MANUFACTURE OF SEMICONDUCTOR DEVICES, METHOD FOR MANUFACTURE OF SEMICONDUCTOR DEVICES, AND METHOD FOR FORMATION OF EMBEDDED WRITING
    93.
    发明授权
    AQUEOUS DISPERSION, AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING USED FOR MANUFACTURE OF SEMICONDUCTOR DEVICES, METHOD FOR MANUFACTURE OF SEMICONDUCTOR DEVICES, AND METHOD FOR FORMATION OF EMBEDDED WRITING 有权
    用于制造半导体器件的化学机械抛光的水性分散体,用于制造半导体器件的方法和用于形成嵌入式布线的方法

    公开(公告)号:US06740590B1

    公开(公告)日:2004-05-25

    申请号:US09531163

    申请日:2000-03-17

    IPC分类号: H01L21302

    摘要: The object of the present invention is to provide an aqueous dispersion that can give the required properties for a wide range of uses including electronic materials, magnetic materials, optical materials and polishing materials, and to provide an aqueous dispersion for chemical mechanical polishing (CMP slurry) that gives an adequate polishing rate without creating scratches in polishing surfaces. Another object of the present invention is, to provide a method for manufacture of semiconductor devices using a CMP slurry that can control progressive erosion due to scratches and the like during polishing and that can achieve efficient flattening of working films, and to provide a method for formation of embedded wiring. The aqueous dispersion or CMP slurry of the present invention contains polymer particles made of thermoplastic resins or the like, and inorganic particles made of alumina, silica or the like, wherein the zeta potentials of the polymer particles and inorganic particles are of opposite signs, and they are bonded by electrostatic force to form aggregates as composite particles. The aggregates are subjected to ultrasonic wave irradiation or shear stress with a homogenizer to give more uniformly dispersed composite particles.

    摘要翻译: 本发明的目的是提供一种水性分散体,其可以为包括电子材料,磁性材料,光学材料和抛光材料在内的广泛用途提供所需的性能,并提供用于化学机械抛光的水性分散体(CMP浆料 ),其提供足够的抛光速率,而不会在抛光表面中产生划痕。 本发明的另一个目的是提供一种使用CMP浆料制造半导体器件的方法,所述CMP浆料可以在抛光期间控制由划痕等引起的逐渐侵蚀,并且可以实现工作膜的有效平坦化,并提供一种方法 形成嵌入式布线。 本发明的水性分散体或CMP浆料含有由热塑性树脂等构成的聚合物颗粒和由氧化铝,二氧化硅等制成的无机颗粒,其中聚合物颗粒和无机颗粒的ζ电位具有相反的标志, 它们通过静电力结合以形成作为复合颗粒的聚集体。 聚集体用均化器进行超声波照射或剪切应力,得到更均匀分散的复合颗粒。

    Polishing apparatus and method
    94.
    发明授权
    Polishing apparatus and method 有权
    抛光设备和方法

    公开(公告)号:US06722964B2

    公开(公告)日:2004-04-20

    申请号:US09824644

    申请日:2001-04-04

    IPC分类号: B24B100

    摘要: A polishing apparatus and method has a function of polishing a surface of a film formed on a substrate to a flat mirror finish and a function of polishing unnecessary metal film such as copper film deposited on an outer peripheral portion of the substrate to remove such unnecessary metal film. The polishing apparatus comprises a surface polishing mechanism comprising a polishing table having a polishing surface and a top ring for holding the substrate and pressing the substrate against the polishing surface of the polishing table to thereby polish a surface of the substrate, and an outer periphery polishing mechanism for polishing an outer peripheral portion of the substrate.

    摘要翻译: 抛光装置和方法具有将形成在基板上的膜的表面抛光至平面镜面的功能,以及抛光沉积在基板的外周部分上的不需要的金属膜如铜膜的功能,以去除这种不必要的金属 电影。 抛光装置包括表面抛光机构,其包括具有抛光表面的抛光台和用于保持基板的顶环,并将基板压靠在抛光台的抛光表面上,从而抛光基板的表面,以及外周抛光 用于抛光衬底的外周部分的机构。

    Charged beam drawing apparatus
    98.
    发明授权
    Charged beam drawing apparatus 失效
    充电光束拉制装置

    公开(公告)号:US06495841B1

    公开(公告)日:2002-12-17

    申请号:US09299145

    申请日:1999-04-26

    IPC分类号: H01J37317

    摘要: In an electron beam drawing apparatus including an objective lens for focusing an electron beam emitted from an electron gun on a sample surface and an objective deflector for controlling the position of the electron beam on the sample surface, an objective driving mechanism for mechanically moving the objective lens and objective deflector in a plane perpendicular to the optical axis of the electron beam is provided and an optical axis shifting deflector arranged nearer to the electron gun than the objective lens and objective deflector, for deflecting the electron beam in synchronism with the operation of the objective lens and objective deflector is provided.

    摘要翻译: 在包括用于将从电子枪发射的电子束聚焦在样品表面上的物镜和用于控制电子束在样品表面上的位置的物镜偏转器的电子束描绘装置中,用于机械地移动物镜的物镜驱动机构 提供了与电子束的光轴垂直的平面中的透镜和物镜偏转器,并且与物镜和物镜偏转器相比更靠近电子枪布置的光轴移动偏转器,用于与电子束的操作同步地偏转 提供物镜和物镜偏转器。

    Water-laden solid matter of vapor-phase processed inorganic oxide particles and slurry for polishing and manufacturing method of semiconductor devices
    99.
    发明授权
    Water-laden solid matter of vapor-phase processed inorganic oxide particles and slurry for polishing and manufacturing method of semiconductor devices 有权
    气相处理无机氧化物颗粒的含水固体物质和用于半导体器件的抛光和制造方法的浆料

    公开(公告)号:US06409780B1

    公开(公告)日:2002-06-25

    申请号:US09482937

    申请日:2000-01-14

    IPC分类号: C09K314

    CPC分类号: C09G1/02 C09K3/1463

    摘要: Water-laden solid matter is provided which is obtained by adding 40 to 300 weight parts of water to 100 weight parts of inorganic oxide particles synthesized by fumed process or metal evaporation oxidation process, slurry for polishing is provided which is manufactured by using the water-laden solid matter, and a method for manufacturing a semiconductor device using the above slurry. Said water-laden solid matter is within a range of 0.3 to 3 g/cm3 in bulk density and within a range of 0.5 to 100 mm&phgr; in average particle size when manufactured granular. Said slurry for polishing is manufactured from the water-laden solid matter, and the average particle size thereof after being dispersed in water is within a range of 0.05 to 1.0 &mgr;m.

    摘要翻译: 提供含水固体物质,其通过向通过热解法或金属蒸发氧化法合成的100重量份的无机氧化物颗粒中加入40至300重量份的水而获得,提供了通过使用水 - 负载固体物质,以及使用上述浆料制造半导体器件的方法。 所述含水固体物质的体积密度为0.3〜3g / cm 3,制粒时的平均粒径为0.5〜100mmφ的范围。 用于抛光的所述浆料由含水固体物质制成,其在分散在水中的平均粒径在0.05-1.0μm的范围内。

    Semiconductor processing system and method of using the same
    100.
    发明授权
    Semiconductor processing system and method of using the same 失效
    半导体处理系统及其使用方法

    公开(公告)号:US06334928B1

    公开(公告)日:2002-01-01

    申请号:US09239793

    申请日:1999-01-29

    IPC分类号: B01D800

    摘要: A semiconductor wafer etching system exhausts an exhaust gas including fluorocarbon gas to an exhaust line. Two traps, that are capable of trapping the fluorocarbon gas in the exhaust gas by cooled adsorption and releasing the adsorbed fluorocarbon gas by heating, are alternately arranged on the exhaust line. The two traps are alternately separated from the exhaust gas and regenerated on a regeneration line which serves to release the adsorbed fluorocarbon gas from the traps. The trap which is in the trap mode to adsorb the fluorocarbon gas is cooled to −120° C. or less. The trap which is in the regeneration mode to release the adsorbed fluorocarbon gas is heated to −100° C. or more.

    摘要翻译: 半导体晶片蚀刻系统将包括碳氟化合物气体的废气排出到排气管线。 能够通过冷却吸附捕集排气中的碳氟化合物气体并且通过加热而释放吸附的碳氟化合物气体的两个捕集阱交替排列在排气管线上。 两个捕集阱与废气交替分离,并在用于从捕集器中释放吸附的碳氟化合物气体的再生管线上再生。 陷阱模式中吸附碳氟化合物气体的阱被冷却至-120℃或更低。 处于再生模式以释放吸附的碳氟化合物气体的捕集器被加热到​​-100℃或更高。