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    Etching depth measuring device, etching apparatus, and etching depth measuring method
    92.
    发明授权
    Etching depth measuring device, etching apparatus, and etching depth measuring method 有权
    蚀刻深度测量装置，蚀刻装置和蚀刻深度测量方法

    公开(公告)号：US07794563B2

    公开(公告)日：2010-09-14

    申请号：US11445134

    申请日：2006-06-02

    Applicant: Naoki Kubota ,  Akihiro Horita

    Inventor： Naoki Kubota ,  Akihiro Horita

    IPC: H01L21/00 ,  C23C16/00 ,  C23C14/00

    CPC classification number: H01J37/304 ,  H01J37/3053 ,  H01J37/32963 ,  H01J2237/24585 ,  H01J2237/30466 ,  H01J2237/3343

    Abstract: An etching depth measuring device for measuring the etching depth of an object to be processed, when etching the object to be processed by using active species present in a plasma, the etching depth measuring device comprising: a chamber in which is formed an introduction port for introducing a part of the active species; a member to be processed which is housed in the chamber and etched by the part of the active species; and a mass detecting element which receives a substance generated from the member to be processed and detects the mass of the received substance.

    Abstract translation: 一种蚀刻深度测量装置，用于测量待处理物体的蚀刻深度，当通过使用存在于等离子体中的活性物质蚀刻待处理物体时，所述蚀刻深度测量装置包括：室，其形成有用于 引入一部分活性物种; 待处理的构件，其被容纳在腔室中并被活性物质的一部分蚀刻; 以及质量检测元件，其接收从被处理物质产生的物质并检测接收物质的质量。

    Etching depth measuring device, etching apparatus, and etching depth measuring method
    93.
    发明申请
    Etching depth measuring device, etching apparatus, and etching depth measuring method 有权
    蚀刻深度测量装置，蚀刻装置和蚀刻深度测量方法

    公开(公告)号：US20070045228A1

    公开(公告)日：2007-03-01

    申请号：US11445134

    申请日：2006-06-02

    Applicant: Naoki Kubota ,  Akihiro Horita

    Inventor： Naoki Kubota ,  Akihiro Horita

    IPC: G01L21/30 ,  H01L21/306

    CPC classification number: H01J37/304 ,  H01J37/3053 ,  H01J37/32963 ,  H01J2237/24585 ,  H01J2237/30466 ,  H01J2237/3343

    Abstract: An etching depth measuring device for measuring the etching depth of an object to be processed, when etching the object to be processed by using active species present in a plasma, the etching depth measuring device comprising: a chamber in which is formed an introduction port for introducing a part of the active species; a member to be processed which is housed in the chamber and etched by the part of the active species; and a mass detecting element which receives a substance generated from the member to be processed and detects the mass of the received substance.

    Abstract translation: 一种蚀刻深度测量装置，用于测量待处理物体的蚀刻深度，当通过使用存在于等离子体中的活性物质蚀刻待处理物体时，所述蚀刻深度测量装置包括：室，其形成有用于 引入一部分活性物种; 待处理的构件，其被容纳在腔室中并被活性物质的一部分蚀刻; 以及质量检测元件，其接收从被处理物质产生的物质并检测接收物质的质量。

    Dry etching method for magnetic material
    94.
    发明授权
    Dry etching method for magnetic material 有权
    磁性材料的干蚀刻方法

    公开(公告)号：US07060194B2

    公开(公告)日：2006-06-13

    申请号：US10897127

    申请日：2004-07-23

    Applicant: Yoshimitsu Kodaira ,  Taichi Hiromi

    Inventor： Yoshimitsu Kodaira ,  Taichi Hiromi

    IPC: C23F1/44

    CPC classification number: B82Y25/00 ,  B82Y40/00 ,  C23F4/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F41/308 ,  H01J2237/3343 ,  H01L43/12 ,  Y10T29/49052

    Abstract: A dry etching method in which a plasma of an etching gas is generated and a magnetic material is dry-etched using a mask material made of a non-organic material, wherein an alcohol having at least one hydroxyl group is used as the etching gas. The alcohol used as the etching gas has one hydroxyl group such as an alcohol selected from the group including methanol (CH3OH), ethanol (C2H5OH) and propanol (C3H7OH).

    Abstract translation: 一种干蚀刻方法，其中产生蚀刻气体的等离子体并使用由非有机材料制成的掩模材料进行干蚀刻，其中使用具有至少一个羟基的醇作为蚀刻气体。 用作蚀刻气体的醇具有一个羟基，例如选自甲醇（CH 3 OH），乙醇（C 2 H 5）5 OH）和丙醇（C 3 H 7 OH）。

    Inductively coupled RF plasma reactor and plasma chamber enclosure structure therefor
    95.
    发明申请
    Inductively coupled RF plasma reactor and plasma chamber enclosure structure therefor 审中-公开
    电感耦合射频等离子体反应器及其等离子体室结构

    公开(公告)号：US20040163764A1

    公开(公告)日：2004-08-26

    申请号：US10786424

    申请日：2004-02-25

    Applicant: Applied Materials, Inc.

    Inventor： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

    IPC: H01L021/306 ,  C23C016/00

    CPC classification number: H01J37/32458 ,  B01D53/22 ,  B01D53/226 ,  B01D53/268 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

    Abstract: A plasma chamber enclosure structure for use in an RF plasma reactor. The plasma chamber enclosure structure being a single-wall dielectric enclosure structure of an inverted cup-shape configuration and having ceiling with an interior surface of substantially flat conical configuration extending to a centrally located gas inlet. The plasma chamber enclosure structure having a sidewall with a lower cylindrical portion generally transverse to a pedestal when positioned over a reactor base, and a transitional portion between the lower cylindrical portion and the ceiling. The transitional portion extends inwardly from the lower cylindrical portion and includes a radius of curvature. The structure being adapted to cover the base to comprise the RF plasma reactor and to define a plasma-processing volume over the pedestal. The structure being formed of a dielectric material of silicon, silicon carbide, quartz, and/or alumina being capable of transmitting inductive power therethrough from an adjacent antenna.

    Abstract translation: 用于RF等离子体反应器的等离子体室外壳结构。 等离子体腔室结构是倒置杯形构造的单壁电介质外壳结构，并且具有延伸到中心位置的气体入口的具有基本平坦的圆锥形构造的内表面的天花板。 等离子体室外壳结构具有侧壁，当定位在反应器基座上时，具有大体横向于基座的下部圆柱形部分，以及在下部圆柱形部分和天花板之间的过渡部分。 过渡部分从下圆柱形部分向内延伸并且包括曲率半径。 所述结构适于覆盖所述基座以包括所述RF等离子体反应器并且限定所述基座上的等离子体处理体积。 该结构由硅，碳化硅，石英和/或氧化铝的电介质材料形成，其能够从相邻天线传输感应电力。

    Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
    98.
    发明授权
    Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna 失效
    具有架空螺线管天线的电感耦合射频等离子体反应器的热控制装置

    公开(公告)号：US06514376B1

    公开(公告)日：2003-02-04

    申请号：US09520623

    申请日：2000-03-07

    Applicant: Kenneth Collins ,  Michael Rice ,  Eric Askarinam ,  Douglas Buchberger ,  Craig Roderick

    Inventor： Kenneth Collins ,  Michael Rice ,  Eric Askarinam ,  Douglas Buchberger ,  Craig Roderick

    IPC: C23C1600

    CPC classification number: C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

    Abstract: The invention is embodied in a plasma reactor including a plasma reactor chamber and a workpiece support for holding a workpiece near a support plane inside the chamber during processing, the chamber having a reactor enclosure portion facing the support, a cold body overlying the reactor enclosure portion, a plasma source power applicator between the reactor enclosure portion and the cold body and a thermally conductor between and in contact with the cold body and the reactor enclosure. The thermal conductor and the cold sink define a cold sink interface therebetween, the reactor preferably further including a thermally conductive substance within the cold sink interface for reducing the thermal resistance across the cold sink interface. The thermally conductive substance can be a thermally conductive gas filling the cold body interface. Alternatively, the thermally conductive substance can be a thermally conductive solid material. The reactor can include a gas manifold in the cold body communicable with a source of the thermally conductive gas an inlet through the cold body from the gas manifold and opening out to the cold body interface. The reactor can further include an O-ring apparatus sandwiched between the cold body and the thermal conductor and defining a gas-containing volume in the cold body interface of nearly infinitesimal thickness in communication with the inlet from the cold body. More generally, the reactor can include the facilitation of thermal transfer across an interface between a hot and/or cold sink and any part exposed to the reactor chamber interior atmosphere, such as the ceiling, wall or polymer-hardening precursor ring, for example, by the insertion into that interface of a thermally conductive gas or substance.

    Abstract translation: 本发明体现在等离子体反应器中，该等离子体反应器包括等离子体反应器室和工件支撑件，用于在加工期间将工件保持在室内的支撑平面附近，该室具有面向支撑件的反应器外壳部分，覆盖反应器外壳部分的冷体 ，反应器外壳部分和冷体之间的等离子体源功率施加器和在冷体和反应器外壳之间并与其接触的导热体。 热导体和冷却槽在它们之间限定冷沉接口，反应器优选地还包括在冷沉接口内的导热物质，以降低冷接口接口上的热阻。 导热物质可以是填充冷体界面的导热气体。 或者，导热物质可以是导热固体材料。 反应器可以包括在冷体中的气体歧管，其与导热气体源连通，通过来自气体歧管的冷体和通向冷体界面的入口。 反应器还可以包括夹在冷体和热导体之间的O形环装置，并且在与冷体的入口连通的几乎无穷小的厚度的冷体界面中限定含气体体积。 更一般地，反应器可以包括促进热和/或冷沉之间的界面和暴露于反应室内部大气的任何部分（例如天花板，壁或聚合物硬化前体环）之间的热传递，例如， 通过插入该导热气体或物质的界面。

    Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
    99.
    发明授权
    Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners 失效
    电感耦合RF等离子体反应器，具有架空螺线管天线和模块化限制磁铁衬垫

    公开(公告)号：US06454898B1

    公开(公告)日：2002-09-24

    申请号：US09482261

    申请日：2000-01-11

    Applicant: Kenneth Collins ,  Michael Rice ,  Douglas Buchberger ,  Craig Roderick ,  Eric Askarinam ,  Gerhard Schneider ,  John Trow ,  Joshua Tsui ,  Dennis Grimard ,  Gerald Yin ,  Robert Wu

    Inventor： Kenneth Collins ,  Michael Rice ,  Douglas Buchberger ,  Craig Roderick ,  Eric Askarinam ,  Gerhard Schneider ,  John Trow ,  Joshua Tsui ,  Dennis Grimard ,  Gerald Yin ,  Robert Wu

    IPC: C23C1434

    CPC classification number: H01J37/32522 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

    Abstract: In accordance with a first aspect of the invention, a plasma reactor having a chamber for containing a plasma and a passageway communicating with the chamber is enhanced with a first removable plasma confinement magnet module placed adjacent the passageway including a first module housing and a first plasma confinement magnet inside the housing. It may further include a second removable plasma confinement magnet module placed adjacent the passageway including a second module housing, and a second plasma confinement magnet. Preferably, the first and second modules are located on opposite sides of the passageway. Moreover, the first and second plasma confinement magnets have magnetic orientations which tend to oppose plasma transport or leakage through the passageway. Preferably, the module housing includes a relatively non-magnetic thermal conductor such as aluminum and is in thermal contact with said chamber body. Cooling apparatus can be thermally coupled to the chamber body, whereby to maintain the first plasma confinement magnet below its Curie temperature. If the reactor includes a pumping annulus adjacent of a periphery of the chamber, then the passageway can be one which communicates between the chamber and the pumping annulus. Also, the passageway can be a wafer slit valve or a gas feed inlet. Such a gas feed inlet can be a center gas feed through a ceiling of the chamber. The module housing can rest upon the chamber side wall and the chamber ceiling can rest upon the module housing.

    Abstract translation: 根据本发明的第一方面，具有用于容纳等离子体的腔室和与腔室连通的通路的等离子体反应器通过与通道相邻放置的第一可移除等离子体约束磁体模块而增强，该模块包括第一模块壳体和第一等离子体 限制磁体在壳体内。 其还可以包括邻近通道设置的第二可移除等离子体限制磁体模块，包括第二模块壳体和第二等离子体限制磁体。 优选地，第一和第二模块位于通道的相对侧上。 此外，第一和第二等离子体限制磁体具有倾向于抵抗等离子体输送或通过通道的泄漏的磁性取向。 优选地，模块壳体包括诸如铝的相对非磁性的热导体，并​​且与所述室主体热接触。 冷却装置可以热耦合到室主体，从而将第一等离子体限制磁体保持在其居里温度以下。 如果反应器包括邻近室的周边的泵送环，则通道可以是在室和泵送环之间连通的通道。 此外，通道可以是晶片狭缝阀或气体进料口。 这种气体进料口可以是通过室的天花板的中心气体进料。 模块壳体可以搁置在腔室侧壁上，并且室顶板可以靠在模块壳体上。

    Techniques for etching a transition metal-containing layer
    100.
    发明授权
    Techniques for etching a transition metal-containing layer 失效
    用于蚀刻含过渡金属的层的技术

    公开(公告)号：US6069035A

    公开(公告)日：2000-05-30

    申请号：US994797

    申请日：1997-12-19

    Applicant: Robert John O'Donnell ,  Gregory James Goldspring

    Inventor： Robert John O'Donnell ,  Gregory James Goldspring

    IPC: C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213

    CPC classification number: H01J37/321 ,  C23F4/00 ,  H01L21/32136 ,  H01J2237/3343

    Abstract: A method for etching at least partially through a transition metal-containing layer disposed above a substrate is disclosed. The transition metal-containing layer is disposed below an etch mask. The method includes providing a plasma processing system having a plasma processing chamber, and configuring the plasma processing chamber to etch the transition metal-containing layer. The plasma processing chamber configuring process includes configuring the plasma processing chamber to receive a source gas that includes HCl and Ar, and configuring a power supply associated with the plasma processing chamber to supply energy to strike a plasma from the source gas. The plasma processing chamber configuring process further includes configuring the plasma processing chamber to etch at least partially the transition metal-containing layer with the plasma.

    Abstract translation: 公开了至少部分地通过设置在基板上方的含过渡金属的层进行蚀刻的方法。 含过渡金属的层设置在蚀刻掩模下方。 该方法包括提供具有等离子体处理室的等离子体处理系统，以及配置等离子体处理室以蚀刻含过渡金属的层。 等离子体处理室配置过程包括配置等离子体处理室以接收包括HCl和Ar的源气体，以及配置与等离子体处理室相关联的电源，以供应来自源气体的等离子体的能量。 等离子体处理室配置过程还包括配置等离子体处理室以至少部分地用等离子体蚀刻含过渡金属的层。

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