公开(公告)号：US5948564A

公开(公告)日：1999-09-07

申请号：US782863

申请日：1997-01-13

申请人： Stanford R. Ovshinsky ,  Michael A. Fetcenko ,  Srinivasan Venkatesan ,  Arthur Holland

发明人： Stanford R. Ovshinsky ,  Michael A. Fetcenko ,  Srinivasan Venkatesan ,  Arthur Holland

IPC分类号： H01M4/26 ,  H01M4/28 ,  H01M4/32 ,  H01M4/52 ,  H01M4/80 ,  H01M10/34

CPC分类号： H01M10/345 ,  H01M4/26 ,  H01M4/28 ,  H01M4/32 ,  H01M4/52 ,  H01M4/80

摘要： A positive electrode for use in alkaline rechargeable electrochemical cells comprising: a material comprising a compositionally and structurally disordered multiphase nickel hydroxide host matrix which includes at least one modifier chosen from the group consisting of F, Li, Na, K, Mg, Ba, La, Se, Nd, Pr, Y, Co, Al, Cr, Mn, Fe, Cu, Zn, Sc, Sn, Sb, Te, Bi, Ru, and Pb. A process for forming a high loading uniformly distributed multiphase substantially nitrate free sintered positive electrode for use in an alkaline rechargeable electrochemical cell, the process comprising: (1) fabricating sintered electrode material by forming a slurry of nickel powder, water, carboxymethylcellulose binder, methyl cellulose binder, and a poly(ethylene oxide) polymer; spreading the slurry on a preoxidized perforated nickel substrate; drying the slurry; and sintering the slurry; (2) impregnating the sintered electrode material using multiple impregnation cycles to attain high loading, where each impregnation cycle comprises the steps of: placing the sintered electrode material on a rack; dipping the rack into nickel nitrate; allowing the rack to drip dry; dipping the dried rack into NaOH solution; spraying the rack in a first tank with deionized water overflowing from a second tank; dipping the rack in the second tank filled with deionized water overflowing from a third tank; dipping the rack in the third tank filling with deionized water at a rate of 8-10 gpm; drying the rack; and flipping the rack to attain uniform deposition of material; where in the median dip cycle and in the final dip cycle of the multiple impregnation cycles, the step of dipping the rack into nickel nitrate is replaced by a step of dipping the rack into cobalt nitrate to produce an enriched cobalt surface; and (3) forming the impregnated sinter into positive electrode material by presoaking the impregnated sinter in NaOH presoak tanks to substantially eliminate nitrates; brushing the presoaked impregnated sinter in a surface brushing station; charging the brushed impregnated sinter; discharging the charged impregnated sinter; rinsing the discharged impregnated sinter; and drying the rinsed impregnated sinter to complete the formation of positive electrode material.

公开(公告)号：US5856047A

公开(公告)日：1999-01-05

申请号：US792358

申请日：1997-01-31

申请人： Srinivasan Venkatesan ,  Benjamin Reichman ,  Stanford R. Ovshinsky ,  Binay Prasad ,  Dennis A. Corrigan

发明人： Srinivasan Venkatesan ,  Benjamin Reichman ,  Stanford R. Ovshinsky ,  Binay Prasad ,  Dennis A. Corrigan

IPC分类号： B60K6/28 ,  B60K6/46 ,  B60K6/48 ,  H01M4/24 ,  H01M4/66 ,  H01M4/80 ,  H01M10/34

CPC分类号： B60K6/28 ,  B60K6/46 ,  B60K6/48 ,  H01M4/24 ,  H01M4/661 ,  H01M4/80 ,  H01M4/801 ,  H01M4/805 ,  H01M10/345 ,  H01M4/808 ,  Y02E60/124 ,  Y02T10/6217 ,  Y02T10/6221 ,  Y10S903/907

摘要： Nickel-metal hydride batteries and electrodes are capable of increased power output and recharge rates. The electrodes and batteries produced therefrom exhibit increased internal conductance. The positive and negative electrodes may be formed by pressing powdered metal-hydride active materials into porous metal substrates. The porous metal substrates are formed from copper, copper-plated nickel, or a copper-nickel alloy, and may be additionally plated with a material which is electrically conductive and resistant to corrosion in the battery environment, such as nickel.

摘要翻译： 镍氢电池和电极能够提高功率输出和充电速率。 由此产生的电极和电池显示增加的内部电导。 正极和负极可以通过将粉末状的金属氢化物活性材料压制成多孔金属基体而形成。 多孔金属基板由铜，镀铜的镍或铜镍合金形成，并且可以另外电镀导电且耐电池环境如镍的腐蚀性的材料。

公开(公告)号：US5714768A

公开(公告)日：1998-02-03

申请号：US547349

申请日：1995-10-24

申请人： Stanford R. Ovshinsky ,  Guy C. Wicker

发明人： Stanford R. Ovshinsky ,  Guy C. Wicker

IPC分类号： G11C5/00 ,  G11C11/00 ,  G11C11/56 ,  G11C16/02 ,  H01L21/34 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L27/24 ,  H01L45/00 ,  H01L29/06 ,  H01L47/00

CPC分类号： H01L21/34 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/2409 ,  H01L27/2463 ,  H01L51/05 ,  G11C2213/71 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/144 ,  H01L45/1625

摘要： The present invention is a computational unit comprising a logic processing device, and a memory array deposited on top of and communicating with the logic processing device. More specifically, the present invention is a computational unit comprising a logic processing device, and electrically erasable phase change memory deposited on top of and communicating with the logic processing device.

摘要翻译： 本发明是包括逻辑处理装置和沉积在逻辑处理装置之上并与逻辑处理装置通信的存储器阵列的计算单元。 更具体地说，本发明是一种计算单元，包括逻辑处理装置和电逻辑处理装置之间的电可擦除相变存储器。

公开(公告)号：US5687112A

公开(公告)日：1997-11-11

申请号：US635442

申请日：1996-04-19

申请人： Stanford R. Ovshinsky

发明人： Stanford R. Ovshinsky

IPC分类号： G11C16/02 ,  G11C11/00 ,  G11C11/56 ,  H01L27/10 ,  H01L27/105 ,  H01L45/00

CPC分类号： G11C13/0069 ,  G11C11/56 ,  G11C11/5678 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/1625 ,  G11C13/0004 ,  G11C2013/008 ,  G11C2213/52

摘要： An electrically operated, directly overwritable, multibit, single-cell chalcogenide memory element with multibit storage capabilities and having at least one contact for supplying electrical input signals to set the memory element to a selected resistance value, the second contact tapering to a peak adjacent to the memory element. In this manner the tapered contact helps define the size and position of a conduction path through the memory element.

摘要翻译： 一种具有多位存储能力的电操作的，直接可重写的多位单电池硫族化物存储元件，具有至少一个用于提供电输入信号以将存储元件设置为所选电阻值的触点，第二触点逐渐变细到与 记忆元素。 以这种方式，锥形接触有助于限定通过存储元件的传导路径的尺寸和位置。

公开(公告)号：US5567241A

公开(公告)日：1996-10-22

申请号：US442146

申请日：1995-05-16

申请人： David V. Tsu ,  Rosa Young ,  Stanford R. Ovshinsky

发明人： David V. Tsu ,  Rosa Young ,  Stanford R. Ovshinsky

IPC分类号： C23C16/511 ,  C23C16/517 ,  H01J37/32 ,  C23C16/00

CPC分类号： H01J37/32211 ,  C23C16/511 ,  C23C16/517 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/32678 ,  H01J2237/3321

摘要： A first aspect of the present invention is an improved microwave vacuum feed-through device for coupling microwave energy from a microwave wave guide in a substantially atmospheric pressure region into an elongated linear microwave applicator in a sub-atmospheric pressure region. The improved feed-through is designed to match the impedance of the microwave wave guide in the atmospheric pressure region and the improved linear microwave applicator. A second aspect of the present invention is an improved linear microwave applicator for uniformly coupling 95% or more of the microwave energy input thereto into an elongated plasma zone. The applicator includes curved microwave reflector panels which are used to tune the uniformity of the radiated microwave energy along the length of the linear applicator. A third aspect of the present invention is a microwave enhanced chemical vapor deposition method for depositing thin film material. The method includes a step of intensifying the kinetic/thermal energy of the electrically neutral species in the plasma by intensifying the kinetic/thermal energy of the ions in the plasma and thereby, through ion-neutral collisions, intensifying the kinetic/thermal energy of the electrically neutral species. The step of intensifying the kinetic/thermal energy of the ions in the plasma includes subjecting the plasma to either a very low frequency alternating current electrical bias or an alternating polarity magnetic field, the frequency of thereof being less than about 100 kHz.

摘要翻译： 本发明的第一方面是一种改进的微波真空馈通装置，用于将微波能量从大气压力区域中的微波波导耦合到亚大气压区域中的细长线性微波施加器。 改进的馈通被设计成匹配大气压区域中的微波波导的阻抗和改进的线性微波施加器。 本发明的第二方面是一种改进的线性微波施加器，用于将输入到其中的95％或更多的微波能量均匀地耦合到细长的等离子体区域中。 施加器包括弯曲的微波反射器面板，其用于调节辐射的微波能量沿着线性施加器的长度的均匀性。 本发明的第三方面是用于沉积薄膜材料的微波增强化学气相沉积方法。 该方法包括通过增强等离子体中的离子的动能/热能来增强等离子体中的电中性物质的动力学/热能，从而通过离子中性碰撞强化其中的动能/热能 电中性物种。 增强等离子体中离子的动能/热能的步骤包括使等离子体经受非常低频的交流电偏压或交替极性磁场，其频率小于约100kHz。

公开(公告)号：US5543737A

公开(公告)日：1996-08-06

申请号：US386902

申请日：1995-02-10

申请人： Stanford R. Ovshinsky

发明人： Stanford R. Ovshinsky

IPC分类号： H03K19/02 ,  H03K19/00

CPC分类号： H03K19/02 ,  G11C13/0004

摘要： A logic family employing a plurality of two-terminal chalcogenide switches as logic gates therein. Preferably the two-terminal chalcogenide switches are chalcogenide threshold switches. The logic can employ multi-phase clocking such as four-phase clocking.

摘要翻译： 一种采用多个两端硫族化物开关作为逻辑门的逻辑系列。 优选地，两末端硫族化物开关是硫族化物阈值开关。 该逻辑可以采用多相时钟，如四相时钟。

公开(公告)号：US5536947A

公开(公告)日：1996-07-16

申请号：US506630

申请日：1995-07-25

申请人： Patrick K. Klersy ,  David A. Strand ,  Stanford R. Ovshinsky

发明人： Patrick K. Klersy ,  David A. Strand ,  Stanford R. Ovshinsky

IPC分类号： C23C14/06 ,  G11C11/56 ,  G11C16/02 ,  H01L21/822 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/24 ,  H01L45/00

CPC分类号： G11C13/0004 ,  G11C11/56 ,  G11C11/5678 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/144 ,  G11C13/04 ,  G11C2213/72

摘要： An electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within the dynamic range in response to selected electrical input signals so as to provide the single cell with multibit storage capabilities, and (3) the ability of at least a filamentary portion to be set, by the selected electrical singal to any resistance value in the dynamic range, regardless of the previous resistance value of the material. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range. Each contact includes (1) a thin-film layer, preferably titanium cabonitride or titanium siliconitride, disposed adjacent to the memory material, used as a diffusion barrier to inhibit foreign material from entering the memory material, and (2) a thin-film layer, preferably a Ti--W alloy, disposed remote to the memory material, used to provide a barrier to aluminum electromigration, diffusion and providing an ohmic contact at the aluminum interface.

摘要翻译： 电操作的直接覆盖多单位单元存储元件。 存储元件包括限定单个单元存储元件的一定量的存储器材料。 记忆材料的特征在于：（1）电阻值的大动态范围; 以及（2）响应于所选择的电输入信号在动态范围内被设置为多个电阻值之一的能力，以便向单个单元提供多位存储能力，以及（3）至少一个 通过所选择的电气单位在动态范围内的任何电阻值，而不管材料的先前电阻值如何，要设置的丝状部分。 存储元件还包括一对间隔设置的触点，用于提供电输入信号以将存储器材料设置在动态范围内的所选电阻值。 每个触点包括（1）设置在存储材料附近的用作阻挡异物进入存储材料的扩散阻挡层的薄膜层，优选钛碳氮化钛或钛硅化钛，以及（2）薄膜层 优选Ti-W合金，其设置在远离存储材料的位置，用于提供铝电迁移，扩散的屏障，并在铝界面处提供欧姆接触。

公开(公告)号：US5534712A

公开(公告)日：1996-07-09

申请号：US517313

申请日：1995-08-21

申请人： Stanford R. Ovshinsky ,  David A. Strand ,  Patrick Klersy

发明人： Stanford R. Ovshinsky ,  David A. Strand ,  Patrick Klersy

IPC分类号： G11C11/56 ,  G11C16/02 ,  H01L27/24 ,  H01L45/00

CPC分类号： G11C13/0004 ,  G11C11/56 ,  G11C11/5678 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1641 ,  G11C13/04 ,  G11C2213/72

摘要： Disclosed herein is a solid state, directly overwritable, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, single cell memory element having reduced switching current requirements and an increased thermal stability of data retention. The memory element includes a volume of memory material which is a transition metal modified chalcogen. The transition metal may be selected from the group consisting of Nb, Pd, Pt and mixtures or alloys thereof. The memory material may further include at least one transition metal selected from the group consisting of Fe, Cr, Ni and mixtures or alloys thereof. The memory element exhibits orders of magnitude higher switching speeds at remarkably reduced switching energy levels. The novel memory element of the instant invention is in turn characterized, inter alia, by at least two stable and non-volatile detectable configurations of local atomic and/or electronic order, which configurations can be selectively and repeatably accessed by electrical input signals of designated energy levels. The memory elements are further characterized by enhanced thermal stability of data retention, which stability is achieved by elementally modifying Te--Ge--Sb semiconductor material from which previous memory elements were fabricated.

摘要翻译： 本文公开了具有降低的开关电流要求和增加的数据保持的热稳定性的固态，直接可重写，非易失性，高密度，低成本，低能量，高速度，容易制造的单电池存储元件。 存储元件包括一定量的存储材料，其是过渡金属改性的硫属元素。 过渡金属可以选自Nb，Pd，Pt及其混合物或合金。 记忆材料还可以包括选自Fe，Cr，Ni中的至少一种过渡金属及其混合物或合金。 存储元件在显着降低的开关能量水平下显示出更高的开关速度的数量级。 特别地，本发明的新型存储元件还特征在于本地原子和/或电子顺序的至少两个稳定和非易失性可检测配置，其可以通过指定的电输入信号来选择性地和可重复地访问这些配置 能量水平 存储元件的特征还在于增强了数据保持的热稳定性，通过元素修饰先前存储元件的Te-Ge-Sb半导体材料来实现稳定性。

公开(公告)号：US5534711A

公开(公告)日：1996-07-09

申请号：US423484

申请日：1995-04-19

申请人： Stanford R. Ovshinsky ,  David A. Strand ,  Wolodymyr Czubatyj ,  Patrick Klersy

发明人： Stanford R. Ovshinsky ,  David A. Strand ,  Wolodymyr Czubatyj ,  Patrick Klersy

IPC分类号： G11C11/56 ,  G11C16/02 ,  H01L27/24 ,  H01L45/00

CPC分类号： G11C13/0004 ,  G11C11/56 ,  G11C11/5678 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/144 ,  G11C13/04 ,  G11C2213/72

摘要： The present invention comprises an electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single cell with multibit storage capabilities. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range. At least a filamentary portion of the singIe cell memory element being setable, by the selected electrical signal to any resistance value in said dynamic range, regardless of the previous resistance value of said material. The memory element further includes a filamentary portion controlling means disposed between the volume of memory material and at least one of the spacedly disposed contacts. The controlling means defining the size and position of the filamentary portion during electrical formation of the memory element and limiting the size and confining the location of the filamentary portion during use of the memory element, thereby providing for a high current density within the filamentary portion of the single cell memory element upon input of a very low total current electrical signal to the spacedly disposed contacts.

摘要翻译： 本发明包括电操作的直接覆盖的多位单个单元存储元件。 存储元件包括限定单个单元存储元件的一定量的存储器材料。 记忆材料的特征在于：（1）电阻值的大动态范围; 以及（2）响应于所选择的电输入信号在所述动态范围内被设置为多个电阻值之一的能力，以便向所述单个单元提供多位存储能力。 存储元件还包括一对间隔设置的触点，用于提供电输入信号以将存储器材料设置在动态范围内的所选电阻值。 所述单元存储元件的至少一个细长部分可通过所选择的电信号被设置成所述动态范围内的任何电阻值，而与所述材料的先前电阻值无关。 存储元件还包括设置在存储器材料体积与间隔设置的触点中的至少一个之间的丝状部分控制装置。 控制装置在存储元件的电气形成期间限定丝状部分的尺寸和位置，并且在存储元件的使用期间限制尺寸并限制丝状部分的位置，由此提供丝网部分内的高电流密度 当输入非常低的总电流电信号到间隔布置的触点时，单个单元存储元件。

公开(公告)号：US5512387A

公开(公告)日：1996-04-30

申请号：US198757

申请日：1994-02-18

申请人： Stanford R. Ovshinsky

发明人： Stanford R. Ovshinsky

IPC分类号： H01M4/48 ,  H01M4/52 ,  H01M4/58 ,  H01M6/18 ,  H01M6/40 ,  H01M10/04 ,  H01M10/34 ,  H01M10/36 ,  H01M2/30

CPC分类号： H01M10/0562 ,  H01M10/0436 ,  H01M10/347 ,  H01M6/18 ,  H01M10/0525 ,  H01M4/485 ,  H01M4/52 ,  H01M4/587 ,  H01M6/188 ,  H01M6/40

摘要： A solid state battery comprising a substrate; at least one multilayered electrochemical cell deposited onto the substrate, each layer of the multilayered electrochemical cell composing: a layer of negative electrode material capable of electrochemically adsorbing and desorbing ions during charge and discharge; a layer of positive electrode material capable of electrochemically desorbing and adsorbing ions during charge and discharge; and a layer of insulating/conducting material disposed between the layer of positive electrode material and the layer of negative electrode material, where the layer of insulating/conducting material is electrically insulating and capable of readily conducting or transporting ions from the layer positive electrode material to the layer of negative electrode material while the battery is charging and from the layer of negative electrode material to the layer of positive electrode material while the battery is discharging; and an electrically conductive layer deposited a top the last of the at least one multilayered electrochemical cells, the electrically conductive layer providing one battery terminal.

摘要翻译： 一种固态电池，包括基板; 沉积在衬底上的至少一层多层电化学电池，多层电化学电池的每一层组成：在充电和放电期间能够电离吸附和解吸离子的负极材料层; 能够在充放电期间电化学解吸和吸附离子的正极材料层; 以及设置在所述正极材料层和所述负极材料层之间的绝缘/导电材料层，其中所述绝缘/导电材料层是电绝缘的并且能够容易地将所述层正极材料中的离子导电或输送到 电池正在充电时的负极材料层，并且在电池放电时从负极材料层到正极材料层; 并且导电层在所述至少一个多层电化学电池中的最后一层沉积顶部，所述导电层提供一个电池端子。