公开(公告)号：US20190043952A1

公开(公告)日：2019-02-07

申请号：US16018751

申请日：2018-06-26

申请人： Intel Corporation

发明人： Nicole K. Thomas ,  Ravi Pillarisetty ,  Kanwaljit Singh ,  Hubert C. George ,  David J. Michalak ,  Lester Lampert ,  Zachary R. Yoscovits ,  Roman Caudillo ,  Jeanette M. Roberts ,  James S. Clarke

IPC分类号： H01L29/12 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L21/28 ,  H01L23/46 ,  H01L29/78 ,  H01L29/43 ,  G06N99/00

摘要： Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; a first gate above the quantum well stack, wherein the first gate includes a first gate metal and a first gate dielectric; and a second gate above the quantum well stack, wherein the second gate includes a second gate metal and a second gate dielectric, and the first gate is at least partially between a portion of the second gate and the quantum well stack.

公开(公告)号：US20190027562A1

公开(公告)日：2019-01-24

申请号：US16137504

申请日：2018-09-20

申请人： FUJIFILM Corporation

发明人： Kenji WADA ,  Yuji YOSHIDA

IPC分类号： H01L29/12 ,  H01L29/267 ,  C09K11/70

摘要： There is provided a method of manufacturing a semiconductor quantum dot including the following steps (A1) and (B1):a step (A1) of causing a nanoparticle including a specific compound semiconductor and a salt of a specific metal a1 to react with each other to introduce the metal a1 into a surface layer of the nanoparticle; anda step (B1) of causing the nanoparticle in which the metal a1 is introduced into the surface layer and a salt of a specific metal b1 to react with each other to introduce the metal b1 into the surface layer of the nanoparticle.There is provided a semiconductor quantum dot having a structure in which a specific metal a1 and/or a specific metal b1 is introduced into a surface layer of a nanoparticle including a specific compound semiconductor.

公开(公告)号：US20180366548A1

公开(公告)日：2018-12-20

申请号：US16114221

申请日：2018-08-28

申请人： FUJI ELECTRIC CO.,LTD.

发明人： Tatsuya NAITO

IPC分类号： H01L29/12 ,  H01L21/266 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861 ,  H01L29/417

摘要： An RC-IGBT having a transistor portion and diode portion is provided. An RC-IGBT having a transistor portion and diode portion, and including: a semiconductor substrate; drift region of the first conductivity type provided on the upper surface side of the semiconductor substrate; base region of the second conductivity type provided above the drift region; source region of the first conductivity type provided above the base region; and two or more trench portions provided passing through the source region and the base region from the upper end side of the source region is provided. The diode portion includes: a source region; contact trench provided between two adjacent trench portions of the two or more trench portions on the upper surface side of the semiconductor substrate; and contact layer of the second conductivity type provided below the contact trench, whose doping concentration is higher than a doping concentration of the base region.

公开(公告)号：US10147809B2

公开(公告)日：2018-12-04

申请号：US14988016

申请日：2016-01-05

申请人： MURATA MANUFACTURING CO., LTD.

发明人： Yasunari Umemoto ,  Atsushi Kurokawa ,  Tsunekazu Saimei

IPC分类号： H01L29/737 ,  H01L29/36 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L29/205 ,  H01L29/12

摘要： In a bipolar transistor, a collector layer includes three semiconductor layers: an n-type GaAs layer (Si concentration: about 5×1015 cm−3, thickness: about 350 nm), a p-type GaAs layer (C concentration: about 4.5×1015 cm−3, thickness: about 100 nm, sheet concentration: 4.5×1010 cm−2), and an n-type GaAs layer Si concentration: about 5×1015 cm−3, thickness: about 500 nm. The sheet concentration of the p-type GaAs layer is set to less than 1×1011 cm−2.

公开(公告)号：US10128384B2

公开(公告)日：2018-11-13

申请号：US15828759

申请日：2017-12-01

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Hideomi Suzawa

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/04 ,  H01L27/105 ,  H01L27/12 ,  H01L27/146 ,  H01L29/24 ,  H01L29/66 ,  H01L29/78

摘要： A semiconductor device having a structure which can prevent a decrease in electrical characteristics due to miniaturization is provided. The semiconductor device includes, over an insulating surface, a stack in which a first oxide semiconductor layer and a second oxide semiconductor layer are sequentially formed, and a third oxide semiconductor layer covering part of a surface of the stack. The third oxide semiconductor layer includes a first layer in contact with the stack and a second layer over the first layer. The first layer includes a microcrystalline layer, and the second layer includes a crystalline layer in which c-axes are aligned in a direction perpendicular to a surface of the first layer.

公开(公告)号：US10128344B2

公开(公告)日：2018-11-13

申请号：US15560794

申请日：2016-03-10

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Tomohiro Mimura ,  Takashi Kanemura ,  Shoji Mizuno ,  Masahiro Sugimoto ,  Sachiko Aoi

IPC分类号： H01L29/423 ,  H01L29/78 ,  H01L29/06 ,  H01L29/12 ,  H01L29/10 ,  H01L29/16 ,  H01L29/40 ,  H01L29/51 ,  H01L29/739

摘要： A semiconductor device includes: a drain region made of a first or second conductivity type semiconductors; a drift layer made of the first conductivity type semiconductor; a base region made of the second conductivity type semiconductor; a source region made of the first conductivity type semiconductor with higher concentration; a contact region made of the second conductivity semiconductor with higher concentration; a trench gate structure having upper and lower gate structures; a source electrode connected to the source and contact regions; and a drain electrode at a rear side of the drain region. The upper gate structure is inside the trench at an upper side, and includes a first gate insulation film and a first gate electrode. The lower gate structure is inside the trench at a lower side, and includes a second gate insulation film made of higher dielectric insulation material and a second gate electrode.

公开(公告)号：US20180323290A1

公开(公告)日：2018-11-08

申请号：US16020036

申请日：2018-06-27

申请人： BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM

发明人： Seong Jin KOH ,  Pradeep BHADRACHALAM ,  Liang-Chieh MA

IPC分类号： H01L29/66 ,  H01L29/24 ,  B82Y40/00 ,  H01L29/06 ,  H01L29/78 ,  H01L29/76 ,  H01L29/41 ,  B82Y10/00 ,  H01L29/12 ,  H01L29/08 ,  H01L29/88

CPC分类号： H01L29/66977 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/0895 ,  H01L29/122 ,  H01L29/127 ,  H01L29/24 ,  H01L29/413 ,  H01L29/66439 ,  H01L29/66666 ,  H01L29/7613 ,  H01L29/7827 ,  H01L29/882 ,  Y10S977/774 ,  Y10S977/937

摘要： Energy-filtered cold electron devices use electron energy filtering through discrete energy levels of quantum wells or quantum dots that are formed through band bending of tunneling barrier conduction band. These devices can obtain low effective electron temperatures of less than or equal to 45K at room temperature, steep electrical current turn-on/turn-off capabilities with a steepness of less than or equal to 10 mV/decade at room temperature, subthreshold swings of less than or equal to 10 mV/decade at room temperature, and/or supply voltages of less than or equal to 0.1 V.

公开(公告)号：US10103272B2

公开(公告)日：2018-10-16

申请号：US14886723

申请日：2015-10-19

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto

IPC分类号： H01L29/12 ,  H01L29/786 ,  H01L27/12 ,  H01L29/24

摘要： Many of the physical properties of a silicon semiconductor have already been understood, whereas many of the physical properties of an oxide semiconductor have been still unclear. In particular, an adverse effect of an impurity on an oxide semiconductor has been still unclear. In view of the above, a structure is disclosed in which an impurity that influences electrical characteristics of a semiconductor device including an oxide semiconductor layer is prevented or is eliminated. A semiconductor device which includes a gate electrode, an oxide semiconductor layer, and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer and in which the nitrogen concentration in the oxide semiconductor layer is 1×1020 atoms/cm3 or less is provided.

公开(公告)号：US10096733B2

公开(公告)日：2018-10-09

申请号：US15150816

申请日：2016-05-10

申请人： THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA

发明人： Cherie R. Kagan ,  Aaron T. Fafarman ,  Ji-Hyuk Choi ,  Weon-Kyu Koh ,  David K. Kim ,  Soong Ju Oh ,  Yuming Lai ,  Sung-Hoon Hong ,  Sangameshwar Rao Saudari ,  Christopher B. Murray

IPC分类号： H01B1/06 ,  B05D1/18 ,  H01L31/07 ,  H01L29/06 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/41 ,  H01L29/786 ,  H01L31/032 ,  H01L29/22 ,  H01L29/24 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66 ,  H01L31/18 ,  H01L29/12 ,  H01L29/18 ,  B82Y20/00

摘要： Methods of preparing a dispersion of colloidal nanocrystals (NCs) for use as NC thin films are disclosed. A dispersion of NCs capped with ligands may be mixed with a solution containing chalcogenocyanate (xCN)-based ligands. The mixture may be separated into a supernatant and a flocculate. The flocculate may be dispersed with a solvent to form a subsequent dispersion of NCs capped with xCN-based ligands.

公开(公告)号：US10090470B2

公开(公告)日：2018-10-02

申请号：US15049435

申请日：2016-02-22

申请人： City University of Hong Kong

发明人： Ruiqin Zhang ,  Juncao Bian

IPC分类号： H01L51/40 ,  H01L51/00 ,  H01L29/12 ,  H01L51/44 ,  H01L51/52 ,  H01G9/20 ,  C01B21/06 ,  C23C14/12 ,  H01L51/42 ,  H01L51/50 ,  C23C14/24

摘要： A method of forming a semiconductor film at pressure between 10−5 atm and 10 atm in the presence of a substrate includes (i) providing a precursor material in a reaction container; (ii) arranging the substrate on the reaction container such that a conductive surface of the substrate is facing towards the precursor material; and (iii) conducting a heat treatment to deposit a semiconductor layer on the conductive surface of the substrate. A semiconductor film is obtained from this method and a device comprising such semiconductor film is also provided.