公开(公告)号：US10790188B2

公开(公告)日：2020-09-29

申请号：US16159115

申请日：2018-10-12

Applicant: Applied Materials, Inc.

Inventor： Nasrin Kazem ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/06 ,  H01L21/768 ,  C23C16/04 ,  C23C16/56 ,  H01L21/285

Abstract: Methods for filling a substrate feature with a seamless ruthenium gap fill are described. The methods include depositing a ruthenium film, oxidizing the ruthenium film to form an oxidized ruthenium film, reducing the oxidized ruthenium film to a reduced ruthenium film and repeating the oxidation and reduction processes to form a seamless ruthenium gap fill.

公开(公告)号：US10699897B2

公开(公告)日：2020-06-30

申请号：US15413956

申请日：2017-01-24

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Jeffrey W. Anthis ,  Feng Q. Liu ,  David Thompson

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/455 ,  C23C16/40 ,  C23C16/32 ,  C23C16/34 ,  C23C16/36

Abstract: Provided are acetylide-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a acetylide-based precursor and a reactant in various combinations.

公开(公告)号：US20200006056A1

公开(公告)日：2020-01-02

申请号：US16456978

申请日：2019-06-28

Applicant: Applied Materials, Inc.

Inventor： Thomas Knisley ,  Mark Saly ,  Lakmal C. Kalutarage ,  David Thompson

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/455 ,  C23C16/56

Abstract: Chromium containing precursors and methods of forming chromium-containing thin films are described. The chromium precursor has a chromium-diazadiene bond or cyclopentadienyl ligand and is homoleptic or heteroleptic. A suitable reactant is used to provide one of a metallic chromium film or a film comprising one or more of an oxide, nitride, carbide, boride and/or silicide. Methods of forming ternary materials comprising chromium with two or more of oxygen, nitrogen, carbon, boron, silicon, titanium, ruthenium and/or tungsten are also described. Methods of filling gaps in a substrate with a chromium-containing film are also described.

公开(公告)号：US10483116B2

公开(公告)日：2019-11-19

申请号：US16180817

申请日：2018-11-05

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  David Knapp ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang

IPC: H01L21/285 ,  C23C16/08 ,  C23C16/455 ,  C23C16/06 ,  H01L29/786

Abstract: Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.

公开(公告)号：US10315995B2

公开(公告)日：2019-06-11

申请号：US15407369

申请日：2017-01-17

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson

IPC: C07F15/00 ,  C07C211/55 ,  C07D213/38 ,  C07F7/00 ,  C07D207/335 ,  C07D213/36 ,  C23C16/18 ,  C23C16/455 ,  C07F1/00 ,  C07F1/08 ,  C07F5/02 ,  C07F5/06 ,  C07F7/28 ,  C07F9/00 ,  C07F11/00 ,  C07F13/00 ,  C07C211/13 ,  C07C211/54 ,  C23C16/50

Abstract: Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.

公开(公告)号：US10283352B2

公开(公告)日：2019-05-07

申请号：US15919902

申请日：2018-03-13

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Ben-Li Sheu ,  David Knapp ,  David Thompson

IPC: H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  C23C16/00 ,  H01L21/02 ,  C23C16/18 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768 ,  C23C16/34

Abstract: Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

公开(公告)号：US20190017171A1

公开(公告)日：2019-01-17

申请号：US15649584

申请日：2017-07-13

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Mark Saly ,  Thomas Knisley ,  Benjamin Schmiege ,  David Thompson

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/458 ,  C23C16/52 ,  C23C16/56

Abstract: Methods for depositing a yttrium-containing film through an atomic layer deposition process are described. Some embodiments of the disclosure utilize a plasma-enhanced atomic layer deposition process. Also described is an apparatus for performing the atomic layer deposition of the yttrium containing films.

公开(公告)号：US10115593B2

公开(公告)日：2018-10-30

申请号：US15833728

申请日：2017-12-06

Applicant: APPLIED MATERIALS, INC.

Inventor： David Knapp ,  Simon Huang ,  Jeffrey W. Anthis ,  Philip Alan Kraus ,  David Thompson

IPC: H01L21/033 ,  H01J37/32 ,  H01L21/02 ,  B82Y30/00 ,  C08K3/04

Abstract: Embodiments include a method of processing a hardmask that includes forming an alloyed carbon hardmask over an underlying layer. In an embodiment, the alloyed carbon hardmask is alloyed with metallic-carbon fillers. The embodiment further includes patterning the alloyed carbon hardmask and transferring the pattern of the alloyed carbon hardmask into the underlying layer. According to an embodiment, the method may further include removing the metallic component of the metallic-carbon fillers from the alloyed carbon hardmask to form a porous carbon hardmask. Thereafter, the porous hardmask may be removed. In an embodiment, the metallic component of the metallic-carbon fillers may include flowing a processing gas into a chamber that volatizes the metallic component of the metallic-carbon fillers.

公开(公告)号：US20180269065A1

公开(公告)日：2018-09-20

申请号：US15462214

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Wenyu Zhang ,  Wei V. Tang ,  Yixiong Yang ,  Chen-Han Lin ,  Yi Xu ,  Yu Lei ,  Naomi Yoshida ,  Lin Dong ,  Drew Phillips ,  Srividya Natarajan ,  Atashi Basu ,  Kaliappan Muthukumar ,  David Thompson ,  Paul F. Ma

IPC: H01L21/285 ,  C23C14/14 ,  C23C12/00 ,  H01L29/66 ,  H01L29/45 ,  H01L21/28 ,  H01L29/49

CPC classification number: H01L21/28556 ,  C23C12/00 ,  C23C14/14 ,  C23C16/34 ,  H01L21/28088 ,  H01L21/28568 ,  H01L29/456 ,  H01L29/4966 ,  H01L29/66795

Abstract: Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.

公开(公告)号：US20180199432A1

公开(公告)日：2018-07-12

申请号：US15912388

申请日：2018-03-05

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Mark Saly ,  Bhaskar Jyoti Bhuyan

IPC: H05K1/02 ,  H05K3/40 ,  G03G15/00 ,  G03G21/16 ,  H05K1/11

CPC classification number: H05K1/0296 ,  C07F7/00 ,  C23C16/04 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/50 ,  G03G15/50 ,  G03G15/80 ,  G03G21/1652 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02307 ,  H01L21/3105 ,  H01L21/31133 ,  H01L21/32 ,  H01L21/67207 ,  H05K1/0269 ,  H05K1/117 ,  H05K3/4015 ,  H05K3/403 ,  H05K2201/0394 ,  H05K2201/09063 ,  H05K2201/09181 ,  H05K2201/10287 ,  H05K2201/10363

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface. Methods include soaking a substrate surface comprising hydroxyl-terminations with a silylamine to form silyl ether-terminations and depositing a film onto a surface other than the silyl ether-terminated surface.