公开(公告)号：US07030421B2

公开(公告)日：2006-04-18

申请号：US10962025

申请日：2004-10-08

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

IPC分类号： H01L33/00

CPC分类号： H01L33/24

摘要： Semiconductor light emitting devices and methods of producing same are provided. The semiconductor light emitting devices include a substrate that has a surface including a difference-in-height portion composed of, for example, a wurtzite compound. A crystal growth layer is formed in the substrate surface wherein at least a portion of which is oriented along an inclined plane with respect to a principal plane of the substrate. The semiconductor device includes a first conductive layer, an active layer and a second conductive layer formed on the crystal layer in a stacked arrangement and oriented along the inclined place.

公开(公告)号：US06998645B2

公开(公告)日：2006-02-14

申请号：US11076846

申请日：2005-03-09

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

IPC分类号： H01L33/00

CPC分类号： H01L33/24 ,  H01J63/04 ,  H01J63/06 ,  H01S5/227 ,  H01S5/2272 ,  H01S5/32341

摘要： Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.

公开(公告)号：US06969670B2

公开(公告)日：2005-11-29

申请号：US10341827

申请日：2003-01-14

申请人： Goshi Biwa ,  Hiroyuki Okuyama

发明人： Goshi Biwa ,  Hiroyuki Okuyama

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01L33/44 ,  H01L21/365 ,  C30B25/04 ,  C30B28/14

CPC分类号： H01L33/24 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/06 ,  Y10S438/93 ,  Y10S438/974

摘要： At the time of selective growth of an active layer on a substrate, crystal is previously grown in an active layer non-growth region, and the active layer is grown in an active layer selective growth region. With this configuration, a source supplied to the non-growth region is incorporated in the deposited crystal from the initial stage of growth, so that the supplied amount of the source to the active layer selective growth region is kept nearly at a constant value over the entire period of growth of the active layer, to eliminate degradation of characteristics of the device due to a variation in growth rate of the active layer. In particular, the selective growth method is effective in fabrication of a semiconductor light emitting device including a cladding layer, a guide layer, and an active layer, each of which is formed by selective growth, wherein the active layer has multiple quantum wells.

摘要翻译： 在衬底上的有源层的选择性生长时，预先在有源层非生长区域中生长晶体，并且在活性层选择性生长区域中生长活性层。 利用这种构造，从生长的初始阶段将提供给非生长区的源结合到沉积的晶体中，使得向活性层选择生长区提供的源的量保持在恒定值 活性层的整个生长周期，以消除由于活性层的生长速率的变化引起的器件的特性劣化。 特别地，选择生长方法在制造包括包覆层，引导层和有源层的半导体发光器件中是有效的，其中每一个通过选择性生长形成，其中有源层具有多个量子阱。

公开(公告)号：US06967353B2

公开(公告)日：2005-11-22

申请号：US10341706

申请日：2003-01-14

申请人： Jun Suzuki ,  Hiroyuki Okuyama ,  Goshi Biwa ,  Etsuo Morita

发明人： Jun Suzuki ,  Hiroyuki Okuyama ,  Goshi Biwa ,  Etsuo Morita

IPC分类号： H01L33/06 ,  H01L33/16 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/38 ,  H01L29/22 ,  H01L29/18 ,  H01L29/24 ,  H01L33/00

CPC分类号： H01L33/24 ,  H01L33/18

摘要： A semiconductor light emitting device includes a crystal layer formed on a substrate, the crystal layer having a tilt crystal plane tilted from the principal plane of the substrate, and a first conductive type layer, an active layer, and a second conductive type layer, which are formed on the crystal layer in such a manner as to extend within planes parallel to the tilt crystal plane, wherein the device has a shape formed by removing the apex and its vicinity of the stacked layer structure formed on the substrate. Such a semiconductor light emitting device is excellent in luminous efficiency even if the device has a three-dimensional device structure. The present invention also provides a method of fabricating the above semiconductor light emitting device.

摘要翻译： 半导体发光器件包括形成在衬底上的晶体层，所述晶体层具有从衬底的主平面倾斜的倾斜晶体面，以及第一导电类型层，有源层和第二导电型层， 以平行于倾斜晶面的平面内延伸的方式形成在晶体层上，其中，该器件具有通过去除形成在基板上的堆叠层结构的顶点及其附近而形成的形状。 这种半导体发光器件即使器件具有三维器件结构，发光效率也优异。 本发明还提供一种制造上述半导体发光器件的方法。

公开(公告)号：US06961150B2

公开(公告)日：2005-11-01

申请号：US09955188

申请日：2001-09-19

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： G06K15/12 ,  H04N1/409 ,  G06K15/00

CPC分类号： H04N1/4092 ,  G06K15/1223

摘要： An image processing apparatus includes an edge detecting unit which identifies an area of given image data as a gradation sequence area and a character/line art area and which outputs edge information of the character/line art, a level converting unit which generates a strength modulation signal so as to emphasize an edge of the character/line art area, a laser driver which outputs a laser drive signal in order to form a picture dot larger than a standard size in response to the strength modulation signal. Further, according to the present invention, it is possible to print an image with emphasizing an edge portion of a character/line art by a laser printer.

摘要翻译： 图像处理装置包括边缘检测单元，其将给定图像数据的区域识别为灰度序列区域和字符/线条艺术区域，并且输出字符/线条图像的边缘信息;电平转换单元，其生成强度调制 信号以强调字符/线条艺术区域的边缘，激光驱动器，其响应于强度调制信号而输出激光驱动信号以形成大于标准尺寸的图像点。 此外，根据本发明，可以通过激光打印机来强调字符/线条艺术的边缘部分来打印图像。

公开(公告)号：US20050167677A1

公开(公告)日：2005-08-04

申请号：US11097732

申请日：2005-03-31

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC分类号： H01L21/205 ,  H01L33/00 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L29/15

CPC分类号： H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

公开(公告)号：US06924500B2

公开(公告)日：2005-08-02

申请号：US10062687

申请日：2002-01-30

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC分类号： H01L21/205 ,  H01L33/00 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L29/20 ,  H01L31/036

CPC分类号： H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

摘要翻译： 提供半导体发光器件。 半导体发光器件包括衬底和选择性地生长在其上的晶体层，其中晶体层的至少一部分沿着与衬底相关的取向主平面倾斜或对角地相交的平面定向，从而例如增强晶体 性能，防止穿透位错，并且在制造和使用期间促进装置小型化和分离。

公开(公告)号：US20050145859A1

公开(公告)日：2005-07-07

申请号：US11066699

申请日：2005-02-24

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC分类号： H01L21/205 ,  H01L33/00 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L27/15

CPC分类号： H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

公开(公告)号：US06870190B2

公开(公告)日：2005-03-22

申请号：US10092687

申请日：2002-03-06

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Masaru Minami

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Masaru Minami

IPC分类号： G09F9/33 ,  G09F9/46 ,  H01L27/15 ,  H01L33/32 ,  H01L33/34 ,  H01L33/40 ,  H01L33/44 ,  H01L33/58 ,  H01S5/323 ,  H01S5/40

CPC分类号： H01L27/156 ,  H01L33/24 ,  H01L2221/68368 ,  H01L2224/24226 ,  H01L2924/01004 ,  H01L2924/0102 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/1301 ,  H01S5/32341 ,  H01S5/4056 ,  H01L2924/00

摘要： A display unit and semiconductor light emitting devices are provided. The display unit includes a number of the semiconductor light emitting devices arrayed on a base body, wherein each of the semiconductor light emitting devices is formed together with dummy devices for setting an emission wavelength of the semiconductor light emitting device, and the semiconductor light emitting device is formed by selective growth, and one conductive layer is formed in self-alignment on planes grown from tilt planes formed by selective growth. Such a display unit has a structure suitable for multi-colors without increasing the number of production steps.

摘要翻译： 提供显示单元和半导体发光器件。 显示单元包括排列在基体上的多个半导体发光器件，其中每个半导体发光器件与用于设置半导体发光器件的发射波长的伪器件一起形成，并且半导体发光器件 通过选择性生长形成，并且在由通过选择性生长形成的倾斜平面生长的平面上以自对准形成一个导电层。 这种显示单元具有适合于多种颜色的结构，而不增加制作步骤的数量。

公开(公告)号：US06831300B2

公开(公告)日：2004-12-14

申请号：US10258157

申请日：2003-05-07

申请人： Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa ,  Toyoharu Oohata

发明人： Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa ,  Toyoharu Oohata

IPC分类号： H01L2922

CPC分类号： H01L33/405 ,  H01L33/32

摘要： In a semiconductor light emitting device configured to extract light through a substrate thereof, an electrode layer is formed on a p-type semiconductor layer (such as p-type GaN layer) formed on an active layer, and a nickel layer is formed as a contact metal layer between the electrode layer and the p-type semiconductor layer and adjusted in thickness not to exceed the intrusion length of light generated in the active layer. Since the nickel layer is sufficiently thin, reflection efficiency can be enhanced.

摘要翻译： 在被配置为通过其基板提取光的半导体发光器件中，在形成于有源层上的p型半导体层（例如p型GaN层）上形成电极层，并且形成镍层作为 电极层和p型半导体层之间的接触金属层的厚度不超过有源层中产生的光的侵入长度。 由于镍层足够薄，因此可以提高反射效率。