公开(公告)号：US20110297258A1

公开(公告)日：2011-12-08

申请号：US13115132

申请日：2011-05-25

申请人： Koichi Tanaka ,  Atsushi Teshima ,  Yoshihiko Sasaki ,  Hiroshi Hamaguchi

发明人： Koichi Tanaka ,  Atsushi Teshima ,  Yoshihiko Sasaki ,  Hiroshi Hamaguchi

IPC分类号： F16H61/28

CPC分类号： F16H61/0206 ,  F16H57/0435 ,  F16H61/0025 ,  F16H2061/004 ,  F16H2200/0021 ,  Y10T137/85986

摘要： A hydraulic control circuit of a vehicular power transmission apparatus includes: a first passageway providing communication between a pump and a strainer; a second passageway providing communication between the pump and a feeding passageway; a third passageway interconnecting the first passageway and the second passageway; a first check valve being disposed between the strainer and a connecting point between the first passageway and the third passageway, and allowing the oil to flow from a strainer side to a pump side; a second check valve being disposed between the feeding passageway and a connecting point between the second passageway and the third passageway, and allowing the oil to flow from the second passageway to a feeding passageway side; and a third check valve being disposed in the third passageway, and allowing the oil to flow from the first passageway to a second passageway side.

摘要翻译： 车辆动力传动装置的液压控制回路包括：第一通道，其提供泵和过滤器之间的连通; 第二通道，其在所述泵和供给通道之间提供连通; 连接所述第一通道和所述第二通道的第三通道; 第一止回阀设置在过滤器和第一通道与第三通道之间的连接点之间，并允许油从过滤器侧流到泵侧; 第二止回阀设置在所述供给通道和所述第二通道和所述第三通道之间的连接点之间，并且允许所述油从所述第二通道流动到进给通道侧; 并且第三止回阀设置在第三通道中，并允许油从第一通道流到第二通道侧。

公开(公告)号：US20110244654A1

公开(公告)日：2011-10-06

申请号：US13115441

申请日：2011-05-25

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/301

CPC分类号： H01L21/76254 ,  C30B33/04 ,  H01L21/265

摘要： A nitride-based semiconductor crystal and a second substrate are bonded together. In this state, impact is applied externally to separate the low-dislocation density region of the nitride-based semiconductor crystal along the hydrogen ion-implanted layer, thereby transferring (peeling off) the surface layer part of the low-dislocation density region onto the second substrate. At this time, the lower layer part of the low-dislocation density region stays on the first substrate without being transferred onto the second substrate. The second substrate onto which the surface layer part of the low-dislocation density region has been transferred is defined as a semiconductor substrate available by the manufacturing method of the present invention, and the first substrate on which the lower layer part of the low-dislocation density region stays is reused as a substrate for epitaxial growth.

摘要翻译： 氮化物类半导体晶体和第二基板结合在一起。 在这种状态下，外部施加冲击以沿着氢离子注入层分离氮化物基半导体晶体的低位错密度区域，从而将低位错密度区域的表面层部分转移（剥离）到 第二基板。 此时，低位错密度区域的下层部分停留在第一基板上，而不会转移到第二基板上。 将低位错密度区域的表面层部分转印到其上的第二基板被定义为可通过本发明的制造方法获得的半导体基板，并且第一基板在其上具有低位错层的下层部分 密度区域残留被重新用作外延生长的衬底。

公开(公告)号：US20110207570A1

公开(公告)日：2011-08-25

申请号：US13033654

申请日：2011-02-24

申请人： Koichi Tanaka ,  Rikiya Kubo ,  Yoshihiko Sasaki ,  Hiroshi Hamaguchi

发明人： Koichi Tanaka ,  Rikiya Kubo ,  Yoshihiko Sasaki ,  Hiroshi Hamaguchi

IPC分类号： F16H48/06

CPC分类号： B60K1/00 ,  B60K2001/001 ,  F16H57/0404 ,  F16H57/0441 ,  F16H57/0471 ,  F16H57/0476 ,  Y02T10/7258

摘要： A vehicle power transmission device includes: an input shaft; a planetary gear type speed reducer disposed concentrically to the input shaft to reduce and output rotation input to the input shaft; and a differential gear device disposed adjacently to the input shaft in a shaft center direction, the differential gear device being rotationally driven by the speed reducer to transmit a drive force to a pair of axles disposed on the shaft center while allowing a rotational difference between the axles, the speed reducer including a sun gear that is fit with a shaft end portion of the input shaft in a relatively non-rotatable manner, the sun gear being prevented from relatively moving toward the differential gear device by an annular snap ring fit and attached to an annular snap ring groove formed on an outer circumferential surface of the shaft end portion of the input shaft on the differential gear device side of the sun gear, the differential gear device including a differential case having a cylindrical end portion formed on the sun gear side or a member fixed thereto that is extended to the outer circumferential side of the snap ring, the differential case having a radial distance of an annular gap formed between the cylindrical end portion or the member fixed thereto and the snap ring set smaller than a groove depth of the snap ring groove.

摘要翻译： 一种车辆动力传递装置，包括：输入轴; 与输入轴同心地设置的行星齿轮式减速器，以减少输出到输入轴的旋转输入; 以及差速齿轮装置，其沿着轴心方向与输入轴相邻配置，差速齿轮装置由减速器旋转驱动，以将驱动力传递到设置在轴心上的一对轴，同时允许 所述减速器包括以相对不可旋转的方式与所述输入轴的轴端部分配合的太阳齿轮，所述太阳齿轮通过环形卡环配合和附接而被阻止朝向所述差速齿轮装置相对移动 涉及形成在太阳齿轮的差动齿轮装置侧的输入轴的轴端部的外周面上的环形卡环槽，该差速齿轮装置具有差速器壳体，该差速器壳体具有形成在太阳齿轮上的圆筒形端部 侧面或固定到其上的构件延伸到卡环的外周侧，差速器壳体具有径向延伸 ce形成在圆柱形端部或固定到其上的构件之间的环形间隙和小于卡环槽的凹槽深度的卡环。

公开(公告)号：US07989707B2

公开(公告)日：2011-08-02

申请号：US11815580

申请日：2006-12-12

申请人： Takaharu Yamano ,  Hajime Iizuka ,  Hideaki Sakaguchi ,  Toshio Kobayashi ,  Tadashi Arai ,  Tsuyoshi Kobayashi ,  Tetsuya Koyama ,  Kiyoaki Iida ,  Tomoaki Mashima ,  Koichi Tanaka ,  Yuji Kunimoto ,  Takashi Yanagisawa

发明人： Takaharu Yamano ,  Hajime Iizuka ,  Hideaki Sakaguchi ,  Toshio Kobayashi ,  Tadashi Arai ,  Tsuyoshi Kobayashi ,  Tetsuya Koyama ,  Kiyoaki Iida ,  Tomoaki Mashima ,  Koichi Tanaka ,  Yuji Kunimoto ,  Takashi Yanagisawa

IPC分类号： H05K1/16

CPC分类号： H01L23/5389 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/56 ,  H01L21/563 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/552 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L24/97 ,  H01L25/105 ,  H01L25/16 ,  H01L25/162 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81005 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/85 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/207 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/185 ,  H05K1/186 ,  H05K3/20 ,  H05K3/4614 ,  H05K3/462 ,  H05K3/4644 ,  H05K2201/10007 ,  H05K2201/10378 ,  H05K2201/10674 ,  H05K2201/10977 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49146 ,  H01L2924/00

摘要： A method of producing a chip embedded substrate is disclosed. This method comprises a first step of mounting a semiconductor chip on a first substrate on which a first wiring is formed; and a second step of joining the first substrate with a second substrate on which a second wiring is formed. In the second step, the semiconductor chip is encapsulated between the first substrate and the second substrate and electrical connection is made between the first wiring and the second wiring so as to form multilayered wirings connected to the semiconductor chip.

摘要翻译： 公开了一种制造芯片嵌入式基板的方法。 该方法包括将半导体芯片安装在其上形成有第一布线的第一基板上的第一步骤; 以及将第一基板与形成有第二布线的第二基板接合的第二步骤。 在第二步骤中，将半导体芯片封装在第一基板和第二基板之间，并且在第一布线和第二布线之间形成电连接，以形成连接到半导体芯片的多层布线。

公开(公告)号：US07972937B2

公开(公告)日：2011-07-05

申请号：US12230984

申请日：2008-09-09

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/322

CPC分类号： H01L21/76254

摘要： An object of the present invention is to provide a method by which bonding at a low temperature is possible and an amount of metal contaminants in an SOI film is decreased. An embodiment of the present invention is realized in the following manner. A single crystal silicon substrate 10 surface-activated by a plasma-treatment and a quartz substrate 20 are bonded together at a low temperature, to which an external impact is given to mechanically delaminate silicon film from a single crystal silicon bulk thereby obtaining a semiconductor substrate (SOI substrate) having a silicon film (SOI film) 12. Next, the SOI substrate is subjected to a heat-treatment at a temperature of 600° C. to 1250° C. so that metal impurities accidentally mixed into an interface of the SOI film and the quartz substrate and into the SOI film in such a step as a plasma-treatment are gettered to a surface region of the silicon film 12. Then, in the end, a surface layer (gettering layer) of the silicon film 12 of the SOI substrate after the heat-treatment is removed to finally prepare an SOI film 13 and a semiconductor substrate (SOI substrate) is obtained.

摘要翻译： 本发明的目的是提供一种可以在低温下进行接合并降低SOI膜中的金属污染物的量的方法。 以下述方式实现本发明的实施例。 通过等离子体处理表面激活的单晶硅衬底10和石英衬底20在低温下被接合在一起，对其进行外部冲击以将硅膜从单晶硅体层剥离，从而获得半导体衬底 （SOI衬底）12。接下来，将SOI衬底在600℃至1250℃的温度下进行热处理，使得金属杂质意外地混入到 SOI膜和石英衬底以及诸如等离子体处理的步骤中的SOI膜被吸收到硅膜12的表面区域。然后，最后，将硅膜12的表面层（吸气层） 的SOI基板，最终制作SOI膜13，得到半导体基板（SOI基板）。

公开(公告)号：US20110132141A1

公开(公告)日：2011-06-09

申请号：US13057422

申请日：2009-04-28

申请人： Yoshihiro Mizuno ,  Koichi Tanaka ,  Yusuke Ogata

发明人： Yoshihiro Mizuno ,  Koichi Tanaka ,  Yusuke Ogata

IPC分类号： F16H47/06 ,  F16H57/04 ,  F16H41/30

CPC分类号： F16H41/02 ,  F16H7/06 ,  F16H41/30 ,  F16H45/02 ,  F16H57/0441 ,  Y10T74/19149 ,  Y10T74/19153

摘要： An oil passage structure of a chain-driven oil pump includes three lines of oil passages for supplying oil from the center support to the torque converter, a first oil passage for supplying oil to the torque converter through the inside of an input shaft of the torque converter, a second oil passage for supplying oil to the torque converter through a space defined by the outer periphery surface of the input shaft and the inner periphery surface of a stator shaft, and a third oil passage for supplying oil to the torque converter by bypassing the drive sprocket. The third oil passage is provided on the outer periphery side of the drive sprocket and in a position where it does not interfere with the operation of a chain. Accordingly, it is possible to utilize the flex lock-up to a maximum extent, and to reduce the diameter of the sprocket.

摘要翻译： 链式油泵的油路结构包括从中心支撑件向变矩器供给油的三条油路，用于通过扭矩输入轴的内部向变矩器供给油的第一油路 转换器，用于通过由输入轴的外周面和定子轴的内周面限定的空间向变矩器供给油的第二油路，以及用于通过旁路向变矩器供油的第三油路 驱动链轮。 第三油路设置在驱动链轮的外周侧，并且在不干扰链的操作的位置。 因此，可以最大程度地利用弯曲锁定，并且减小链轮的直径。

公开(公告)号：US07939744B2

公开(公告)日：2011-05-10

申请号：US10226087

申请日：2002-08-21

申请人： Masato Fukudome ,  Kazuhiro Nishizono ,  Koichi Tanaka ,  Kenichi Tajima

发明人： Masato Fukudome ,  Kazuhiro Nishizono ,  Koichi Tanaka ,  Kenichi Tajima

IPC分类号： H01L35/30 ,  H01L35/28 ,  H01L35/16 ,  H01L35/20 ,  C01B9/00 ,  C01B25/14 ,  C01B19/04 ,  C04B35/00

CPC分类号： H01L35/16 ,  H01L35/32

摘要： A thermoelectric element formed of a sintered body of a semiconductor comprising at least two kinds of elements selected from the group consisting of Bi, Te, Se and Sb, and having a micro-Vickers' hardness of not smaller than 0.5 GPa. The thermoelectric element has a hardness of not smaller than 0.5 GPa, and exhibits a large resistance against deformation, and is not easily broken by deformation. As a result, breakage due to deformation is prevented and a highly reliable thermoelectric element is realized even when a shape factor which is a ratio of the sectional area of the thermoelectric element to the height thereof, is increased and even when the element density is increased.

摘要翻译： 由半导体烧结体形成的热电元件包括​​选自由Bi，Te，Se和Sb组成的组中的至少两种元素，并且具有不小于0.5GPa的微维氏硬度。 该热电元件具有不小于0.5GPa的硬度，并且表现出较大的抗变形能力，并且不容易因变形而破裂。 结果，即使当作为热电元件的截面积与其高度的比例的比例的形状因子增加时，即使元件密度增加，也可以防止由于变形引起的破损，并且即使形成高温可靠的热电元件， 。

公开(公告)号：US07912248B2

公开(公告)日：2011-03-22

申请号：US12457963

申请日：2009-06-26

申请人： Koichi Tanaka

发明人： Koichi Tanaka

IPC分类号： G06K9/00

CPC分类号： G06T7/207 ,  G06T7/246 ,  G06T2207/10016 ,  G06T2207/20016

摘要： An image processing apparatus enables efficient feature point tracking. A displacement calculating unit reads a hierarchical tier image with the smallest image size from each of a reference pyramid and a tracking pyramid in an image memory, and performs repetitive detection of a tracking point using a hierarchical gradient method. The displacement calculating unit repeatedly calculates a displacement amount between the feature points, and outputs a value of a repetition count of tracking point detection until convergence of the displacement amount and the value of the displacement amount at a time of convergence. A repetition criterion setting unit changes the criterion for determination of displacement amount convergence based on the repetition count and displacement amount. The displacement calculating unit reads upper hierarchical tier images and detects a tracking point according to the changed criterion. The repetitive tracking point detection and convergence determination criterion setting change are repeated.

摘要翻译： 图像处理装置能够实现有效的特征点跟踪。 位移计算单元从图像存储器中的参考金字塔和跟踪金字塔中的每一个读取具有最小图像大小的分层图像，并且使用分级梯度方法来执行跟踪点的重复检测。 位移计算单元重复地计算特征点之间的位移量，并且输出跟踪点检测的重复次数的值，直到位移量的收敛和收敛时的位移量的值。 重复标准设定单元基于重复计数和位移量改变用于确定位移量收敛的标准。 位移计算单元读取上层次层图像，并根据改变的标准检测跟踪点。 重复的跟踪点检测和收敛判定准则设置重复。

公开(公告)号：US07892934B2

公开(公告)日：2011-02-22

申请号：US12158047

申请日：2006-11-01

申请人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

发明人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

IPC分类号： H01L21/331 ,  H01L21/8222

CPC分类号： H01L21/76254

摘要： On the side of a surface (the bonding surface side) of a single crystal Si substrate, a uniform ion implantation layer is formed at a prescribed depth (L) in the vicinity of the surface. The surface of the single crystal Si substrate and a surface of a transparent insulating substrate as bonding surfaces are brought into close contact with each other, and bonding is performed by heating the substrates in this state at a temperature of 350° C. or below. After this bonding process, an Si—Si bond in the ion implantation layer is broken by applying impact from the outside, and a single crystal silicon thin film is mechanically peeled along a crystal surface at a position equivalent to the prescribed depth (L) in the vicinity of the surface of the single crystal Si substrate.

摘要翻译： 在单晶Si衬底的表面（接合面侧）侧，在表面附近以规定的深度（L）形成均匀的离子注入层。 单晶Si衬底的表面和作为结合面的透明绝缘衬底的表面彼此紧密接触，并且通过在350℃或更低的温度下在该状态下加热衬底来进行接合。 在该接合工艺之后，通过从外部施加冲击来破坏离子注入层中的Si-Si键，并且在等于规定深度（L）的位置上的晶体表面机械剥离单晶硅薄膜 单晶Si衬底表面附近。

公开(公告)号：US07855127B2

公开(公告)日：2010-12-21

申请号：US12010711

申请日：2008-01-29

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262

摘要： A method for manufacturing a semiconductor substrate including: epitaxially growing a silicon germanium (SiGe) film on a silicon (Si) substrate by a chemical vapor deposition method; subjecting a heat treatment to the SiGe film at a temperature of not less than 700° C. and not more than 1200° C.; implanting hydrogen ions into a surface of the SiGe film; subjecting a surface activation treatment to a main surface of at least one of the SiGe film and a support substrate; bonding main surfaces of the SiGe film and the support substrate at a temperature of not less than 100° C. and not more than 400° C.; and applying an external impact to a bonding interface between the SiGe film and the support substrate to delaminate the SiGe crystal along a hydrogen ion implanted interface of the SiGe film, thereby forming a SiGe thin film on the main surface of the support substrate.

摘要翻译： 一种制造半导体衬底的方法，包括：通过化学气相沉积法在硅（Si）衬底上外延生长硅锗（SiGe）膜; 在不低于700℃且不超过1200℃的温度下对SiGe膜进行热处理; 将氢离子注入SiGe膜的表面; 对SiGe膜和支撑基板中的至少一个的主表面进行表面活化处理; 在不低于100℃且不超过400℃的温度下接合SiGe膜和支撑衬底的主表面; 并对SiGe膜和支撑基板之间的接合界面施加外部冲击，以沿着SiGe膜的氢离子注入界面分解SiGe晶体，从而在支撑基板的主表面上形成SiGe薄膜。