公开(公告)号：US20140292344A1

公开(公告)日：2014-10-02

申请号：US13853666

申请日：2013-03-29

Applicant: STMICROELECTRONICS PTE LTD.

Inventor： Olivier Le Neel ,  Calvin Leung

IPC: G01R31/36

CPC classification number: G01R31/3679 ,  G01R31/3662 ,  H02J7/0006 ,  H02J7/0016 ,  H02J7/0021 ,  H02J7/0036

Abstract: A device is provided for monitoring the total current discharged from a battery. The device includes a bridge circuit of resistors in which one of the resistors has a resistance which varies according to the current which has passed through it. Whenever the battery passes a current to a load, a small portion of the current is passed through the bridge circuit.

Abstract translation: 提供了用于监测从电池释放的总电流的装置。 该装置包括电阻器的桥接电路，其中一个电阻器具有根据已经通过它的电流而变化的电阻。 每当电池通过电流到负载时，电流的一小部分通过桥接电路。

公开(公告)号：US20140191387A1

公开(公告)日：2014-07-10

申请号：US14177146

申请日：2014-02-10

Applicant: STMicroelectronics Pte Ltd. ,  STMicroelectronics Grenoble 2 SAS

Inventor： Yonggang JIN ,  Romain COFFY ,  Jerome TEYSSEYRE

IPC: H01L23/498 ,  H01L23/34

CPC classification number: H01L23/498 ,  H01L21/561 ,  H01L21/76283 ,  H01L21/76802 ,  H01L21/76838 ,  H01L23/3114 ,  H01L23/34 ,  H01L23/36 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/02331 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/04105 ,  H01L2224/05008 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/96 ,  H01L2924/00014 ,  H01L2924/181 ,  Y10T29/49124 ,  Y10T29/49174 ,  Y10T29/49204 ,  H01L2224/03 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A fan-out wafer level package is provided with a semiconductor die embedded in a reconstituted wafer. A redistribution layer is positioned over the semiconductor die, and includes a land grid array on a face of the package. A copper heat spreader is formed in the redistribution layer over the die in a same layer as a plurality of electrical traces configured to couple circuit pads of the semiconductor die to respective contact lands of the land grid array. In operation, the heat spreader improves efficiency of heat transfer from the die to the circuit board.

Abstract translation: 扇出晶片级封装设置有嵌入重构晶片中的半导体管芯。 再分配层位于半导体管芯上方，并且在封装的表面上包括焊盘栅格阵列。 铜管散热器形成在芯片上的再分配层中，与多个配置成将半导体管芯的电路焊盘耦合到焊盘栅极阵列的接触焊盘的多个电迹线相同的层中。 在操作中，散热器提高了从模具到电路板的热传递的效率。

公开(公告)号：US20140061447A1

公开(公告)日：2014-03-06

申请号：US14017768

申请日：2013-09-04

Applicant: STMicroelectronics Pte Ltd ,  STMicroelectronics (Research & Development) Limited

Inventor： Colin Campbell ,  Laurent Herard

IPC: G01S17/02 ,  G01R3/00

CPC classification number: G01S17/026 ,  G01R3/00 ,  G01S7/4813 ,  Y10T29/49002

Abstract: A sensor package includes a radiation source and a radiation detector provided on a substrate. A cover member is mounted on or affixed to the substrate over the source and detector. The cover member includes an opaque housing, a first transparent portion provided over the source, a second transparent portion provided over the detector and a transparent insert within the housing and positioned at one of said transparent portions. An opaque protrusion is provided on the housing separating a region associate with the first transparent portion (and radiation source) from a region associated with the second transparent portion (and detector), the protrusion attached to a surface of the substrate.

Abstract translation: 传感器封装包括辐射源和设置在基板上的辐射检测器。 覆盖构件安装在基底上或固定到源和检测器上。 盖构件包括不透明壳体，设置在源极上的第一透明部分，设置在检测器上方的第二透明部分和位于壳体内并位于所述透明部分之一处的透明插入件。 在壳体上设置不透明突起，该区域与第二透明部分（和检测器）相关联的区域与第一透明部分（和辐射源）相关联的区域分离，所述突起附接到基板的表面。

公开(公告)号：US20130168858A1

公开(公告)日：2013-07-04

申请号：US13722776

申请日：2012-12-20

Applicant: STMicroelectronics Pte Ltd.

Inventor： Anandan Ramasamy ,  Yonggang Jin ,  Yun Liu

IPC: H01L21/56 ,  H01L23/498

CPC classification number: H01L21/565 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/49838 ,  H01L24/19 ,  H01L24/96 ,  H01L25/105 ,  H01L2224/12105 ,  H01L2224/96 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/03 ,  H01L2924/00

Abstract: A bar formed from a reconstituted wafer and containing one or more conductive material filled voids is used to electrically and physically connect the top and bottom packages in a package-on-package (PoP) package. The bar is disposed in the fan out area of the lower package forming the PoP package.

Abstract translation: 由重构的晶片形成并包含一个或多个导电材料填充的空隙的条被用于电和物理地连接封装在封装（PoP）封装中的顶部和底部封装。 该条被布置在形成PoP包装的下部包装的扇形区域中。

公开(公告)号：US20130119282A1

公开(公告)日：2013-05-16

申请号：US13670766

申请日：2012-11-07

Applicant: STMicroelectronics Pte Ltd.

Inventor： Yonggang Jin ,  Wee Chin Judy Lim

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L31/16 ,  G01S7/4813 ,  G01S17/026 ,  G01V8/12 ,  H01L21/568 ,  H01L25/167 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/167 ,  H01L31/18 ,  H01L31/186 ,  H01L2224/04105 ,  H01L2224/18 ,  H01L2224/19 ,  H01L2924/3511 ,  H03K17/941 ,  H03K17/9631 ,  H03K17/9638 ,  H03K2217/96023 ,  Y10T156/1052 ,  Y10T156/1064

Abstract: An optical detection sensor and method of forming same. The optical detection sensor be a proximity detection sensor that includes an optical system and a selectively transmissive structure. Electromagnetic radiation such as laser light can be emitted through a transmissive portion of the selectively transmissive structure. A reflected beam can be detected to determine the presence of an object.

Abstract translation: 一种光学检测传感器及其形成方法。 光学检测传感器是包括光学系统和选择性透射结构的接近检测传感器。 诸如激光的电磁辐射可以通过选择性透射结构的透射部分发射。 可以检测反射光束以确定物体的存在。

公开(公告)号：US12230619B2

公开(公告)日：2025-02-18

申请号：US17714822

申请日：2022-04-06

Applicant: STMICROELECTRONICS PTE LTD

Inventor： Jing-En Luan

IPC: H01L25/16 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538

Abstract: The present disclosure is directed to embodiments of optical sensor packages. For example, at least one embodiment of an optical sensor package includes a light-emitting die, a light-receiving die, and an interconnect substrate within a first resin. A first transparent portion is positioned on the light-emitting die and the interconnect substrate, and a second transparent portion is positioned on the light-receiving die and the interconnect substrate. A second resin is on the first resin, the interconnect substrate, and the first and second transparent portions, respectively. The second resin partially covers respective surfaces of the first and second transparent portions, respectively, such that the respective surfaces are exposed from the second resin.

公开(公告)号：US12224342B2

公开(公告)日：2025-02-11

申请号：US17694276

申请日：2022-03-14

Applicant: STMicroelectronics Pte Ltd

Inventor： Yean Ching Yong ,  Maurizio Gabriele Castorina ,  Voon Cheng Ngwan ,  Ditto Adnan ,  Fadhillawati Tahir ,  Churn Weng Yim

IPC: H01L29/78 ,  H01L21/764 ,  H01L21/765 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66

Abstract: An integrated circuit transistor device includes a semiconductor substrate providing a drain, a first doped region buried in the semiconductor substrate providing a body and a second doped region in the semiconductor substrate providing a source. A trench extends into the semiconductor substrate and passes through the first and second doped regions. An insulated polygate region within the trench surrounds a polyoxide region that may have void inclusion. The polygate region is formed by a first gate lobe and second gate lobe on opposite sides of the polyoxide region. A pair of gate contacts are provided at each trench. The pair of gate contacts includes: a first gate contact extending into the first gate lobe at a location laterally offset from the void and a second gate contact extending into the second gate lobe at a location laterally offset from the void.

公开(公告)号：US12196730B2

公开(公告)日：2025-01-14

申请号：US18485072

申请日：2023-10-11

Applicant: STMICROELECTRONICS S.r.l. ,  STMICROELECTRONICS PTE LTD

Inventor： Malek Brahem ,  Hatem Majeri ,  Olivier Le Neel ,  Ravi Shankar ,  Enrico Rosario Alessi ,  Pasquale Biancolillo

IPC: G01N33/00 ,  G01N27/02 ,  G01N27/12

Abstract: The present disclosure is directed to a gas sensor device that detects gases with large molecules (e.g., a gas with a molecular weight between 150 g/mol and 450 g/mol), such as siloxanes. The gas sensor device includes a thin film gas sensor and a bulk film gas sensor. The thin film gas sensor and the bulk film gas sensor each include a semiconductor metal oxide (SMO) film, a heater, and a temperature sensor. The SMO film of the thin film gas sensor is an thin film (e.g., between 90 nanometers and 110 nanometers thick), and the SMO film of the bulk film gas sensor is an thick film (e.g., between 5 micrometers and 20 micrometers thick). The gas sensor device detects gases with large molecules based on a variation between resistances of the SMO thin film and the SMO thick film.

公开(公告)号：US20240404905A1

公开(公告)日：2024-12-05

申请号：US18538935

申请日：2023-12-13

Applicant: STMicroelectronics Pte Ltd

Inventor： Eng Hui GOH ,  Voon Cheng NGWAN ,  Fadhillawati TAHIR ,  Ditto ADNAN ,  Boon Kiat TUNG ,  Maurizio Gabriele CASTORINA

IPC: H01L23/31 ,  H01L21/02 ,  H01L27/06

Abstract: An integrated circuit device includes a metal contact and a passivation layer extending on a sidewall of the metal contact and on first and second surface portions of a top surface of the metal contact. The passivation layer is format by a stack of layers including: a tetraethyl orthosilicate (TEOS) layer; a Phosphorus doped TEOS (PTEOS) layer on top of the TEOS layer; and a Silicon-rich Nitride layer on top of the PTEOS layer. The TEOS and PTEOS layers extend over the first surface portion, but not the second surface portion, of the top surface of the metal contact. The Silicon-rich Nitride layer extends over both the first and second surface portions, and is in contact with the second surface portion.

公开(公告)号：US20240379741A1

公开(公告)日：2024-11-14

申请号：US18779549

申请日：2024-07-22

Applicant: STMicroelectronics PTE LTD

Inventor： Yean Ching YONG

IPC: H01L29/06 ,  H01L21/477 ,  H01L21/762 ,  H01L29/51 ,  H01L29/78

Abstract: An integrated circuit includes a polysilicon region that is doped with a dopant. A portion of the polysilicon region is converted to a polyoxide region which includes un-oxidized dopant ions. A stack of layers overlies over the polyoxide region. The stack of layers includes: a first ozone-assisted sub-atmospheric pressure thermal chemical vapor deposition (O3 SACVD) TEOS layer; and a second O3 SACVD TEOS layer; wherein the first and second O3 SACVD TEOS layers are separated from each other by a dielectric region. A thermally annealing is performed at a temperature which induces outgassing of passivation atoms from the first and second O3 SACVD TEOS layers to migrate to passivate interface charges due to the presence of un-oxidized dopant ions in the polyoxide region.