Memory Error Detection
    142.
    发明申请

    公开(公告)号:US20180203759A1

    公开(公告)日:2018-07-19

    申请号:US15838161

    申请日:2017-12-11

    Applicant: Rambus Inc.

    Abstract: Systems and methods are provided for detecting and correcting address errors in a memory system. In the memory system, a memory device generates an error-detection code based on an address transmitted via an address bus and transmits the error-detection code to a memory controller. The memory controller transmits an error indication to the memory device in response to the error-detection code. The error indication causes the memory device to remove the received address and prevent a memory operation

    Memory components and controllers that calibrate multiphase synchronous timing references

    公开(公告)号:US09824730B2

    公开(公告)日:2017-11-21

    申请号:US15228644

    申请日:2016-08-04

    Applicant: Rambus Inc.

    Abstract: A first timing reference signal and a second timing reference signal are sent to a memory device. The second timing reference signal has approximately a quadrature phase relationship with respect to the first timing reference signal. A plurality of serial data patterns are received from the memory device. The transitions of the first timing reference and the second timing reference determining when transitions occur between the bits of the plurality of data patterns. Timing indicators associated with when received transitions occur between the bits of the plurality of data patterns are received from the memory device. The timing indicators are each measured using a single sampler. Based on the timing indicators, a first duty cycle adjustment for the first timing reference signal, a second duty cycle adjustment for the second timing reference signal, and a quadrature phase adjustment are determined and applied.

    Memory repair using external tags
    147.
    发明授权

    公开(公告)号:US09734921B2

    公开(公告)日:2017-08-15

    申请号:US14407318

    申请日:2013-10-31

    Applicant: Rambus Inc.

    Abstract: A memory device (100) includes an extra column (114) of repair memory tiles. These repair memory tiles are accessed at the same time, and in the same manner as the main array of memory tiles. The output of the repair column is substituted for the output of a column of the main array (112). The main array column that is substituted is determined by tags (121) stored externally to the memory device. The external tags are queried with a partial address of the access. If the address of the access corresponds to an address in the external tags, the tag information is supplied to the memory device. The tag information determines which column in the main array is replaced by the output of the repair column. Since each column of the main array supplies one bit during the access, the repair column enables cell-by-cell replacement of main array cells.

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