公开(公告)号：US12001241B2

公开(公告)日：2024-06-04

申请号：US18082679

申请日：2022-12-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama

IPC: H01L29/786 ,  G06F1/16 ,  G06F1/26 ,  G11C5/06

CPC classification number: G06F1/1635 ,  G06F1/1626 ,  G06F1/1637 ,  G06F1/263 ,  G11C5/063 ,  H01L29/786

Abstract: A portable electronic device that can operate even when electric power supplied through contactless charge by electromagnetic induction is low is provided. The portable electronic device includes a reflective liquid crystal display which includes a transistor including an oxide semiconductor, a power source portion which includes a rechargeable battery capable of charge by contactless charge, and a signal processing portion which includes a nonvolatile semiconductor memory device. In the portable electronic device, electric power stored in the rechargeable battery is used in the reflective liquid crystal display and the signal processing portion.

公开(公告)号：US11927862B2

公开(公告)日：2024-03-12

申请号：US18115017

申请日：2023-02-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshikazu Kondo ,  Jun Koyama ,  Shunpei Yamazaki

IPC: G02F1/1368 ,  G02F1/1333 ,  G02F1/1362 ,  G09G3/36 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  G02F1/136

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/136227 ,  G02F1/136286 ,  G09G3/3622 ,  H01L27/1225 ,  H01L27/1244 ,  H01L29/45 ,  H01L29/7869 ,  G02F1/13606 ,  G02F1/13624 ,  G02F1/136295 ,  G02F2202/10 ,  G09G2300/0426

Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.

公开(公告)号：US11817506B2

公开(公告)日：2023-11-14

申请号：US17367689

申请日：2021-07-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Jun Koyama

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/24 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L27/124 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631

Abstract: A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

公开(公告)号：US11756966B2

公开(公告)日：2023-09-12

申请号：US17980693

申请日：2022-11-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masashi Tsubuku ,  Kosei Noda

IPC: H01L27/12 ,  G09G3/20 ,  H01L29/786 ,  G09G3/36 ,  G09G3/3233 ,  G09G3/3291 ,  H03K19/003 ,  H03K19/096 ,  G11C19/28 ,  H03K17/16 ,  G11C19/18

CPC classification number: H01L27/1255 ,  G09G3/20 ,  G09G3/2092 ,  G09G3/3291 ,  G09G3/36 ,  G11C19/184 ,  G11C19/28 ,  H01L27/124 ,  H01L27/1222 ,  H01L27/1225 ,  H01L29/7869 ,  H03K17/161 ,  H03K19/00315 ,  H03K19/096 ,  G09G3/3233 ,  G09G3/3648 ,  G09G2300/0439 ,  G09G2300/08 ,  G09G2300/0842 ,  G09G2310/0267 ,  G09G2310/0275 ,  G09G2310/0286 ,  G09G2310/08

Abstract: To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10−13 A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.

公开(公告)号：US11710745B2

公开(公告)日：2023-07-25

申请号：US17666938

申请日：2022-02-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake

IPC: H01L27/12 ,  H01L27/088 ,  H01L29/04 ,  H01L29/24 ,  H01L29/786 ,  H01L29/49 ,  H01L21/02

CPC classification number: H01L27/1225 ,  H01L27/0883 ,  H01L27/127 ,  H01L27/1251 ,  H01L27/1288 ,  H01L29/045 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78693 ,  H01L29/78696 ,  H01L21/02603 ,  H01L29/04 ,  H01L29/4908 ,  H01L2924/13069

Abstract: An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.

公开(公告)号：US11695080B2

公开(公告)日：2023-07-04

申请号：US17749363

申请日：2022-05-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Junpei Sugao ,  Hideki Uochi ,  Yasuo Nakamura

IPC: H01L21/768 ,  H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66 ,  H01L21/02 ,  H01L21/324 ,  H01L29/24 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/324 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76838 ,  H01L27/124 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631

Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

公开(公告)号：US11676975B2

公开(公告)日：2023-06-13

申请号：US16104397

申请日：2018-08-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

IPC: H01L27/12 ,  H01L21/84 ,  H01L27/108 ,  H01L27/11 ,  H01L27/11517 ,  H01L27/11521 ,  H01L27/1156 ,  H01L27/118 ,  H01L29/786 ,  H01L29/24 ,  G11C16/04 ,  G11C16/26

CPC classification number: H01L27/1255 ,  H01L21/84 ,  H01L27/108 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1156 ,  H01L27/11517 ,  H01L27/11521 ,  H01L27/11803 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869 ,  G11C16/0433 ,  G11C16/26

Abstract: An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other.

公开(公告)号：US11573601B2

公开(公告)日：2023-02-07

申请号：US16953511

申请日：2020-11-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama

IPC: H01L29/786 ,  G11C5/06 ,  G06F1/16 ,  G06F1/26

Abstract: A portable electronic device that can operate even when electric power supplied through contactless charge by electromagnetic induction is low is provided. The portable electronic device includes a reflective liquid crystal display which includes a transistor including an oxide semiconductor, a power source portion which includes a rechargeable battery capable of charge by contactless charge, and a signal processing portion which includes a nonvolatile semiconductor memory device. In the portable electronic device, electric power stored in the rechargeable battery is used in the reflective liquid crystal display and the signal processing portion.

公开(公告)号：US11456296B2

公开(公告)日：2022-09-27

申请号：US16779774

申请日：2020-02-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

IPC: H01L29/78 ,  H01L27/105 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/12 ,  H01L27/108 ,  H01L29/24 ,  H01L29/786 ,  G11C13/00 ,  H01L27/11 ,  H01L49/02

Abstract: An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The semiconductor device includes a first transistor which includes a first channel formation region using a semiconductor material other than an oxide semiconductor, a second transistor which includes a second channel formation region using an oxide semiconductor material, and a capacitor. One of a second source electrode and a second drain electrode of the second transistor is electrically connected to one electrode of the capacitor.

公开(公告)号：US11297403B2

公开(公告)日：2022-04-05

申请号：US17344496

申请日：2021-06-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Jun Koyama

IPC: H04Q9/00 ,  G08C17/02 ,  H01L27/12 ,  G11C7/16 ,  G11C11/404 ,  G11C11/405 ,  G11C11/4074 ,  G11C11/412 ,  G11C7/12 ,  G11C8/08 ,  H01L29/786 ,  H03M1/46

Abstract: To provide an environmental sensor with reduced power consumption.
A semiconductor device includes a first sensor, a second sensor, a control circuit, a transmission amplifier, a modulation circuit, a memory device, an analog-to-digital converter circuit, and an antenna. The memory device and the analog-to-digital converter circuit each include a transistor in which an oxide semiconductor is formed in a channel region. The second sensor is an optical sensor, and has a function of transmitting a trigger signal to the control circuit when receiving laser light. The control circuit has a function of transmitting a control signal to the first sensor, the transmission amplifier, the modulation circuit, the memory device, and the analog-to-digital converter circuit when receiving the trigger signal. The first sensor is a sensor that senses a physical or chemical quantity, and the measured data is subjected to digital conversion by the analog-to-digital converter circuit and stored in the memory device. In addition, the data is transmitted as an electromagnetic wave signal from the antenna through the modulation circuit and the transmission amplifier.