公开(公告)号：US20230249217A1

公开(公告)日：2023-08-10

申请号：US18300748

申请日：2023-04-14

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami J. Pore ,  Marko Tuominen ,  Hannu Huotari

IPC: B05D1/00 ,  C23C16/455 ,  H10K71/16

CPC classification number: B05D1/60 ,  C23C16/45525 ,  H10K71/164

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve.

公开(公告)号：US11718913B2

公开(公告)日：2023-08-08

申请号：US15997445

申请日：2018-06-04

Applicant: ASM IP Holding B.V.

Inventor： Sonti Sreeram ,  Junwei Su ,  Loc Vinh Tran

IPC: C23C16/455 ,  H01J37/32

CPC classification number: C23C16/45587 ,  C23C16/45557 ,  C23C16/45561 ,  C23C16/45563 ,  H01J37/32449 ,  H01J37/32458

Abstract: A gas distribution system, a reactor system including the gas distribution system, and method of using the gas distribution system and reactor system are disclosed. The gas distribution system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas distribution system coupled to a reaction chamber.

公开(公告)号：US20230238243A1

公开(公告)日：2023-07-27

申请号：US18100298

申请日：2023-01-23

Applicant: ASM IP Holding B.V.

Inventor： Mojtaba Samiee ,  Petri Raisanen ,  Dong Li ,  Yasiel Cabrera

IPC: H01L21/28 ,  H01L29/49

CPC classification number: H01L21/28247 ,  H01L29/4966 ,  H01L21/28088

Abstract: Methods of forming structures including a layer of metal carbon nitride (MCN) and of mitigating metal loss from and/or tuning the layer of metal carbon nitride are disclosed. Systems for forming the layers and mitigating metal loss and structures formed using the methods are also disclosed.

公开(公告)号：US20230238239A2

公开(公告)日：2023-07-27

申请号：US17073544

申请日：2020-10-19

Applicant: ASM IP Holding B.V.

Inventor： Kunal Bhatnagar

IPC: H01L21/28 ,  H01L29/49 ,  H01L29/423

CPC classification number: H01L21/28088 ,  H01L29/4966 ,  H01L29/4236

Abstract: Methods for filling a gap feature on a substrate surface are disclosure. The methods may include: providing a substrate comprising one or more gap features into a reaction chamber; and depositing a metallic gap-fill film within the gap feature by performing repeated unit cycles of a cyclical deposition process. Semiconductor structures including metallic gap-fill films are also disclosed.

公开(公告)号：US20230230813A2

公开(公告)日：2023-07-20

申请号：US17744902

申请日：2022-05-16

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/32

CPC classification number: H01J37/32495 ,  C23C16/4405 ,  C23C16/4404 ,  C23C16/32

Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

公开(公告)号：US20230227965A1

公开(公告)日：2023-07-20

申请号：US18153575

申请日：2023-01-12

Applicant: ASM IP Holding, B.V.

Inventor： Shaoren Deng ,  David Kurt de Roest ,  Vincent Vandalon ,  Anirudhan Chandrasekaran ,  YongGyu Han ,  Marko Tuominen

IPC: C23C16/04 ,  C23C16/02 ,  C23C16/455 ,  C23C16/513 ,  C23C16/56

CPC classification number: C23C16/042 ,  C23C16/0272 ,  C23C16/0227 ,  C23C16/45523 ,  C23C16/513 ,  C23C16/56

Abstract: The disclosure relates to the manufacture of semiconductor devices, especially to methods and processing assemblies for forming a patterned structure on a substrate. The methods comprise providing the substrate comprising a first structure into a reaction chamber, wherein a surface of the first structure comprises a first material and the substrate comprises a second material, and selectively depositing a conformal passivation layer on the first material relative to the second material to cover the first structure, and selectively depositing an etch-stop layer on the second material relative to the passivation layer. In some embodiments, a multiple patterning or a tone reversal of a pattern may be performed using the methods and deposition assemblies of the disclosure.

公开(公告)号：US20230223258A1

公开(公告)日：2023-07-13

申请号：US18153282

申请日：2023-01-11

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Kelly Houben ,  Steven Van Aerde ,  Wilco Verweij ,  Bert Jongbloed ,  Charles Dezelah

IPC: H01L21/02 ,  C30B25/16 ,  C30B29/06 ,  C30B29/52 ,  C30B29/68 ,  C30B25/18

CPC classification number: H01L21/0262 ,  H01L21/02532 ,  H01L21/02661 ,  C30B25/165 ,  C30B29/06 ,  C30B29/52 ,  C30B29/68 ,  C30B25/186

Abstract: A method and a wafer processing furnace for forming an epitaxial stack on a plurality of substrates is provided. In a preferred embodiment, the method comprises providing plurality of substrates to a process chamber. A plurality of deposition cycles are executed, thereby forming the epitaxial stack on the plurality of substrates. The epitaxial comprises a plurality of epitaxial pairs, each pair comprising a first epitaxial layer and a second epitaxial layer. The deposition cycle comprises a first deposition pulse and a second deposition pulse. The first deposition pulse comprises a provision of a first reaction gas mixture to the process chamber, thereby forming the first epitaxial layer and the second deposition pulse comprises a provision of a second reaction gas mixture to the process chamber, thereby forming the second epitaxial layer

公开(公告)号：US20230215763A1

公开(公告)日：2023-07-06

申请号：US18147038

申请日：2022-12-28

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Moataz Bellah Mousa ,  Dong Li ,  Arul Vigneswar Ravichandran ,  Yasiel Cabrera ,  Salvatore Luiso

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/02 ,  C23C16/34 ,  C23C16/08 ,  C23C16/56

CPC classification number: H01L21/76879 ,  H01L21/02068 ,  H01L21/76883 ,  C23C16/0227 ,  C23C16/34 ,  C23C16/08 ,  C23C16/345 ,  C23C16/56

Abstract: Methods and systems for cleaning and treating a surface of a substrate. An exemplary method includes providing a substrate comprising a gap comprising a metal oxide and a dielectric material within a reaction chamber, and using a thermal process to selectively remove the metal oxide. Exemplary methods can further include a step of depositing a metal-containing material within the gap to at least partially fill the gap and using a direct plasma and treating a surface of the metal-containing material to remove oxygen from the surface of the metal-containing material. Exemplary systems can perform the methods.

公开(公告)号：US20230212752A1

公开(公告)日：2023-07-06

申请号：US18147106

申请日：2022-12-28

Applicant: ASM IP Holding B.V.

Inventor： Zhengyan Zhou ,  Hong Gao

IPC: C23C16/46 ,  H01L21/687 ,  H05B3/28

CPC classification number: C23C16/46 ,  H01L21/68785 ,  H05B3/283 ,  H01J37/32357

Abstract: A substrate support includes a heater body, a heater element, and a heater terminal. The heater body is formed from a ceramic material and has upper and lower surfaces separated by a thickness. The heater element is arranged between the upper and lower surfaces and is embedded within the ceramic material forming the heater body. The heater terminal is arranged between the upper and lower surfaces, is electrically connected to the heater element, and has an electrode surface and a rounded surface. The electrode surface opposes the lower surface to flow an electric current to the heater element. The rounded surface opposes the upper surface and is embedded within the ceramic material to limit stress within the ceramic material during heating of a substrate seated on the upper surface of the heater body. Semiconductor processing systems and methods of making substrate supports for semiconductor processing systems are also described.

公开(公告)号：US20230203654A1

公开(公告)日：2023-06-29

申请号：US18147631

申请日：2022-12-28

Applicant: ASM IP Holding, B.V.

Inventor： Paridhi Gupta ,  Taku Omori ,  Cheuk Li ,  Aadil Vora ,  Todd Dunn

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45544 ,  C23C16/52 ,  C23C16/45587

Abstract: Apparatus and method for semiconductor substrate processing are presented. For devices such as valves used for semiconductor substrate processing especially a process like ALD, there is a need to monitor and control the exact time taken from the signal to open and close the valves so that delay times may be controlled. In an embodiment, an apparatus comprising a reactor, a valve, a process controller and a valve monitor system is presented. The process controller may be operationally connected to the valve and may be provided with a memory. The sensors may be either electrical or optical sensors.