公开(公告)号：US06924236B2

公开(公告)日：2005-08-02

申请号：US09870085

申请日：2001-05-30

申请人： Hiroyuki Yano ,  Katsuya Okumura

发明人： Hiroyuki Yano ,  Katsuya Okumura

IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/768 ,  H01L21/8242

CPC分类号： H01L21/02087 ,  H01L21/304 ,  H01L21/3212 ,  H01L21/7684 ,  H01L27/1087 ,  H01L27/10882

摘要： The present invention provides a method of manufacturing a semiconductor device, comprising the step of selectively grinding or polishing the peripheral portion and the beveled portion of a target substrate including a semiconductor substrate. The grinding or polishing of the target substrate is performed after the dry etching step for forming a trench in the target substrate, or after the depositing step of a copper layer providing a source of contamination of the process apparatus in forming a Cu-buried wiring. By grinding or polishing the peripheral portion and the beveled portion of the target substrate, the uneven portion in the peripheral portion and the beveled portion can be removed and copper is prevented from being exposed to the outside, thereby avoiding the particle generation and contamination of the process apparatus.

摘要翻译： 本发明提供一种制造半导体器件的方法，包括选择性研磨或抛光包括半导体衬底的目标衬底的周边部分和斜面部分的步骤。 目标衬底的研磨或抛光在用于在目标衬底中形成沟槽的干蚀刻步骤之后，或者在形成铜掩埋布线之后提供处理装置的污染源的铜层沉积步骤之后进行。 通过研磨或抛光目标基板的周边部分和斜面部分，可以去除周边部分和斜面部分中的不平坦部分，并且防止铜暴露于外部，从而避免了颗粒的产生和污染 处理装置。

公开(公告)号：US06911398B2

公开(公告)日：2005-06-28

申请号：US10107434

申请日：2002-03-28

申请人： Masaki Narita ,  Katsuya Okumura ,  Tokuhisa Ohiwa

发明人： Masaki Narita ,  Katsuya Okumura ,  Tokuhisa Ohiwa

IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/205 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/66

CPC分类号： H01L21/67271 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of making a semiconductor device, comprises preparing a plurality of lots each including semiconductor substrates to be processed, the plurality of lots including at least first and second lots, processing the plurality of lots for every one lot, using a semiconductor manufacturing apparatus, judging whether or not the semiconductor manufacturing apparatus is subjected to cleaning before the second lot is processed, depending upon both a first processing type of the first lot to be processed and a second processing type of the second lot to be processed after the first lot, and processing the second lot without the cleaning in the case where the second lot does not require the cleaning.

摘要翻译： 一种制造半导体器件的方法，包括制备多个批次，每个批次包括要处理的半导体衬底，所述多个批次至少包括第一批次和第二批次，使用半导体制造装置处理每批的多个批次， 根据第一批次的待处理的第一处理类型和第一批次之后的待处理的第二批次的第二处理类型，判断半导体制造装置是否在处理第二批次之前进行清洁， 并且在第二批次不需要清洁的情况下处理第二批而不进行清洁。

公开(公告)号：US20050121142A1

公开(公告)日：2005-06-09

申请号：US10960762

申请日：2004-10-08

申请人： Ken Nakao ,  Takanobu Asano ,  Hiroki Fukushima ,  Katsuya Okumura

发明人： Ken Nakao ,  Takanobu Asano ,  Hiroki Fukushima ,  Katsuya Okumura

IPC分类号： H01L21/31 ,  C23C16/02 ,  H01L21/00 ,  H01L21/205 ,  H01L21/304 ,  H01L21/324 ,  C23F1/00

CPC分类号： H01L21/67109 ,  C23C16/0227 ,  H01L21/67057

摘要： Substrates having surfaces in a highly clean condition are subjected to a thermal process in a heating furnace. In a thermal processing apparatus for processing substrates by a predetermined thermal process that heats the substrates by a heating means, the substrates are held in a vertical position at horizontal intervals in a reaction vessel. Cleaning liquids are supplied into the reaction vessel to clean the substrates, and then the cleaning liquids are drained away through a drain port, and then a process gas is supplied into the reaction vessel to process the substrates by a thermal process. The substrates having the cleaned clean surfaces are subjected to the thermal process without being exposed to the ambient atmosphere and can be satisfactorily processed by the thermal process.

摘要翻译： 具有高度干燥状态的表面的基板在加热炉中进行热处理。 在用于通过加热装置加热基板的预定热处理来处理基板的热处理装置中，基板在反应容器中以水平间隔保持在垂直位置。 向反应容器内供给清洗液以清洗基板，然后将清洗液通过排水口排出，然后通过热处理将工艺气体供给到反应容器中以处理基板。 具有清洁的清洁表面的基板经受热处理而不暴露于环境大气中，并且可以通过热处理令人满意地加工。

公开(公告)号：US06870174B2

公开(公告)日：2005-03-22

申请号：US10864445

申请日：2004-06-10

申请人： Masanori Yamaguchi ,  Katsuya Okumura

发明人： Masanori Yamaguchi ,  Katsuya Okumura

IPC分类号： G21K5/00 ,  G21K5/04 ,  H01J1/52 ,  H01J33/00 ,  H01J33/04

CPC分类号： H01J33/04

摘要： An object of the present invention is to provide to an electron beam tube and electron beam extraction window capable of generating high output electron beam by effectively releasing heat generated when an electron beam passes through a window whereby temperature rise of the window is controlled and breakage of the window is prevented. The electron beam tube comprises first projections continuously provided on a first surface of the window, and second projections which are continuously formed on a second surface of the window and are located in positions corresponding to areas between the first projections wherein a projection height of the second projection, a projection width of the second projection and a distance between the adjacent second projections are smaller than those of the first projections, respectively.

摘要翻译： 本发明的目的是提供一种能够通过有效地释放电子束通过窗口产生的热而产生高输出电子束的电子束管和电子束提取窗，从而控制窗口的温度上升和断开 窗户被阻止。 电子束管包括连续设置在窗口的第一表面上的第一突起和连续地形成在窗口的第二表面上并且位于对应于第一突起之间的区域的位置的第二突起，其中第二突起的突出高度 投影，第二突起的突出宽度和相邻的第二突起之间的距离分别小于第一突起的突出宽度。

公开(公告)号：US20050022732A1

公开(公告)日：2005-02-03

申请号：US10927155

申请日：2004-08-27

申请人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

发明人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

IPC分类号： H01L21/027 ,  H01L21/00 ,  H01L21/20 ,  H01L21/288 ,  H01L21/316 ,  B05C5/00 ,  B05B7/00 ,  B05B13/02 ,  B05C15/00

CPC分类号： H01L21/6715 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/31633

摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).

摘要翻译： 公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动， 将供给的溶液供给到基板上以形成液膜，其中喷嘴的排出口与基板之间的距离h被设定为不小于2mm，并且在小于5×10 -5 qmam ）相对于溶液的表面张力γ（N / m）给出，通过排出口连续排出的溶液的排出速度q（m / sec）和常数为5×10 -5（m.sec / N）。

公开(公告)号：US20050010492A1

公开(公告)日：2005-01-13

申请号：US10911602

申请日：2004-08-05

申请人： Kunihiro Mitsutake ,  Katsuya Okumura

发明人： Kunihiro Mitsutake ,  Katsuya Okumura

IPC分类号： G06Q30/00 ,  G06F17/60

CPC分类号： G06Q30/06 ,  G06Q30/0601

摘要： An electronic commerce for semiconductor products comprises a network, a client terminal, a connection server, a virtual production line, and a real production line. The real production line actually manufactures semiconductor products. The virtual production line provides a computer with substantially the same functions as the real production line and computes an optimal lot progress. The connection server connects the virtual production line to the client terminal via the network. When a condition is entered from the client terminal, the connection server transfers this condition to the virtual production line. Simulation is performed realtime for determining whether a product flows in the virtual production line under the transferred condition. The connection server transfers a simulation result to the client terminal. Based on the simulation result, a electronic commerce is conducted.

摘要翻译： 半导体产品的电子商务包括网络，客户终端，连接服务器，虚拟生产线和实际生产线。 实际生产线实际上是生产半导体产品。 虚拟生产线为计算机提供与实际生产线基本相同的功能，并计算最佳批量进度。 连接服务器通过网络将虚拟生产线连接到客户终端。 当从客户终端输入条件时，连接服务器将该条件传送到虚拟生产线。 实时进行模拟，以确定产品是否在转移条件下在虚拟生产线中流动。 连接服务器将模拟结果传送到客户终端。 基于模拟结果，进行电子商务。

公开(公告)号：US06800569B2

公开(公告)日：2004-10-05

申请号：US10352954

申请日：2003-01-29

申请人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

发明人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

IPC分类号： H01L2131

CPC分类号： H01L21/6715 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/31633

摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 q&ggr; (mm) given with respect to a surface tension &ggr; (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).

摘要翻译： 公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动， 将供给的溶液供给到基板上以形成液膜，其中喷嘴的排出口与基板之间的距离h被设定为不小于2mm，并且在小于5×10 -5 qmam ）相对于溶液的表面张力γ（N / m）给出，通过排出口连续排出的溶液的排出速度q（m / sec）和常数为5×10 -5（m.sec / N）。

公开(公告)号：US06709966B1

公开(公告)日：2004-03-23

申请号：US09606152

申请日：2000-06-29

申请人： Yoshimi Hisatsune ,  Keiichi Sasaki ,  Hiroshi Ikegami ,  Mie Matsuo ,  Nobuo Hayasaka ,  Katsuya Okumura

发明人： Yoshimi Hisatsune ,  Keiichi Sasaki ,  Hiroshi Ikegami ,  Mie Matsuo ,  Nobuo Hayasaka ,  Katsuya Okumura

IPC分类号： H01L2144

CPC分类号： H01L24/81 ,  H01L21/6835 ,  H01L21/76877 ,  H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/11003 ,  H01L2224/1132 ,  H01L2224/1183 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2224/81121 ,  H01L2224/81136 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15787 ,  H05K3/207 ,  H05K3/4007 ,  H05K2201/0367 ,  H05K2201/083 ,  H05K2203/0113 ,  H05K2203/104 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/0401

摘要： A semiconductor device comprising the bump containing magnetic body, magnetic body, the bump including non-magnetic body for at least partially covering the magnetic body, mixture of magnetic particles and non-magnetic particles and the bump including baked magnetic particles and baked non-magnetic particles.

摘要翻译： 一种半导体器件，包括包括磁体的磁体，磁体，包括用于至少部分地覆盖磁体的非磁性体的凸起，磁性粒子和非磁性粒子的混合物以及包含焙烧磁性粒子的凸块和​​烘烤的非磁性体 粒子。

公开(公告)号：US06673704B2

公开(公告)日：2004-01-06

申请号：US10189598

申请日：2002-07-08

申请人： Junichi Wada ,  Atsuko Sakata ,  Tomio Katata ,  Takamasa Usui ,  Masahiko Hasunuma ,  Hideki Shibata ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura

发明人： Junichi Wada ,  Atsuko Sakata ,  Tomio Katata ,  Takamasa Usui ,  Masahiko Hasunuma ,  Hideki Shibata ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura

IPC分类号： H01L2140

CPC分类号： H01L21/76867 ,  H01L21/2855 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76864 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76886 ,  H01L21/76889

摘要： A method of manufacturing semiconductor device which comprises the steps of forming an insulating film on an Si substrate provided with a wiring layer, forming a contact hole connected to the wiring layer and a wiring groove in the insulating film, filling the contact hole with an Si film, successively forming an Al film and a Ti film all over the substrate, performing a heat treatment thereby to substitute the Al film for the Ti film, and to allow the Si film to be absorbed by the Ti film, whereby filling the contact hole and wiring groove with the Al film, and removing a Ti/Ti silicide which is consisting of Ti silicide formed through the absorption of the Si film by the Ti film and a superfluous Ti, whereby filling the contact hole with an Al plug and filling the wiring groove with an Al wiring.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在具有布线层的Si衬底上形成绝缘膜，形成与布线层连接的接触孔和绝缘膜中的布线槽，用Si 膜，依次在基板上形成Al膜和Ti膜，进行热处理，从而将Al膜替代为Ti膜，并使Si膜被Ti膜吸收，由此填充接触孔 和Al膜的布线槽，除去由Ti膜和多余Ti吸收Si膜形成的由Ti硅化物构成的Ti / Ti硅化物，由此用Al塞填充接触孔，并填充 布线槽与Al接线。

公开(公告)号：US06632335B2

公开(公告)日：2003-10-14

申请号：US09742110

申请日：2000-12-22

申请人： Junji Kunisawa ,  Mitsuko Odagaki ,  Natsuki Makino ,  Koji Mishima ,  Kenji Nakamura ,  Hiroaki Inoue ,  Norio Kimura ,  Tetsuo Matsuda ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Manabu Tsujimura ,  Toshiyuki Morita

发明人： Junji Kunisawa ,  Mitsuko Odagaki ,  Natsuki Makino ,  Koji Mishima ,  Kenji Nakamura ,  Hiroaki Inoue ,  Norio Kimura ,  Tetsuo Matsuda ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Manabu Tsujimura ,  Toshiyuki Morita

IPC分类号： C25D2112

CPC分类号： H01L21/6719 ,  C25D7/123 ,  C25D17/001 ,  C25D17/12 ,  C25D17/14 ,  H01L21/2885 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/6723 ,  H01L21/76877 ,  H01L21/76879 ,  H01L2924/0002 ,  H05K3/423 ,  H01L2924/00

摘要： A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.

摘要翻译： 用于衬底的电镀方法和装置将诸如铜的金属填充到形成在半导体衬底中的精细互连图案中。 该装置具有将待镀表面向上水平保持并旋转的衬底的衬底保持部分 36 。 密封材料 90 接触表面的外围边缘部分，以水密的方式密封该部分。 当与基板接触时，阴极电极 88 通过电流。 阴极部分 38 与衬底保持部分 36 整体旋转。 电极臂部分 30 在阴极部分 38 之上，水平和垂直移动并具有阳极 PDAT> 98 面朝下。 将电镀液倒入要被镀表面和靠近待镀表面的阳极 98 之间的空间中。 因此，电镀处理和附带的处理可以通过单个单元执行