公开(公告)号：US20180254179A1

公开(公告)日：2018-09-06

申请号：US15755428

申请日：2016-09-15

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yihong Chen ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/285 ,  H01L21/306 ,  H01L21/768 ,  C23C16/04 ,  C23C16/34 ,  C23C16/455

Abstract: Methods for selectively depositing films by atomic layer deposition are disclosed. Substrate surfaces are passivated by hydrosilylation to prevent deposition and allow selective deposition on unpassivated surfaces.

公开(公告)号：US10017856B1

公开(公告)日：2018-07-10

申请号：US15489242

申请日：2017-04-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Ranga Rao Arnepalli ,  Darshan Thakare ,  Abhijit Basu Mallick ,  Pramit Manna ,  Robert Jan Visser ,  Prerna Sonthalia Goradia ,  Nilesh Chimanrao Bagul

IPC: H01L21/02 ,  C23C16/448 ,  C23C16/40 ,  C23C16/34

CPC classification number: C23C16/4486 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  H01L21/02153 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02271

Abstract: Systems and methods for forming films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a liquid solution made from a solvent and a deposition precursor. A carrier gas may be flowed through the liquid solution and push the droplets toward a substrate placed in a substrate processing region. The droplets pass into the substrate processing region and chemically react with the substrate to form films. The temperature of the substrate may be maintained below the boiling temperature of the solvent during film formation. The solvent imparts a flowability to the forming film and enable the depositing film to flow along the surface of a patterned substrate during formation prior to solidifying. The flowable film results in bottom-up gapfill inside narrow high-aspect ratio gaps in the patterned substrate.

公开(公告)号：US20180144980A1

公开(公告)日：2018-05-24

申请号：US15801949

申请日：2017-11-02

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Abhijit Basu Mallick ,  Ziqing Duan ,  Srinivas Gandikota

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/033 ,  H01L21/762

CPC classification number: H01L21/76897 ,  H01L21/02244 ,  H01L21/02247 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/266 ,  H01L21/32133 ,  H01L21/76227

Abstract: Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.

公开(公告)号：US20180130657A1

公开(公告)日：2018-05-10

申请号：US15805753

申请日：2017-11-07

Applicant: Applied Materials, Inc.

Inventor： Ziqing Duan ,  Abhijit Basu Mallick

IPC: H01L21/033 ,  H01L21/3105 ,  H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/31053 ,  H01L21/31116 ,  H01L21/32105 ,  H01L21/768

Abstract: Processing methods comprising selectively replacing a first pillar material with a second pillar material in a self-aligned process are described. The first pillar material may be grown orthogonally to the substrate surface and replaced with a second pillar material to leave a substantially similar shape and alignment as the first pillar material.

公开(公告)号：US09947576B2

公开(公告)日：2018-04-17

申请号：US14797960

申请日：2015-07-13

Applicant: Applied Materials, Inc.

Inventor： Brian Saxton Underwood ,  Abhijit Basu Mallick

IPC: H01L21/76 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76825 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/76826 ,  H01L21/76837

Abstract: Methods are described for reducing shrinkage experienced by porous films on a patterned substrate. The film may be a silicon-and-hydrogen-containing layer which further contains one or two of carbon, oxygen and nitrogen. Shortly after deposition, the silicon-and-hydrogen-containing layer is treated by concurrent exposure to a relatively small molecule precursor (e.g. NH3 or C2H2) and a source of UV light. The treatment may reduce subsequent shrinkage experienced by the porous film even at the bottom of the film due to the significant penetration prior to reaction. The treatment may reduce shrinkage at the bottom of a trench filled with the porous film.

公开(公告)号：US20170271196A1

公开(公告)日：2017-09-21

申请号：US15461847

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Ludovic Godet ,  Rui Cheng ,  Erica Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/762 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76224 ,  H01L21/02123 ,  H01L21/76283 ,  H01L21/76286 ,  H01L21/76837 ,  H01L23/3178 ,  H01L29/0649

Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).

公开(公告)号：US09741558B2

公开(公告)日：2017-08-22

申请号：US15364125

申请日：2016-11-29

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Kelvin Chan ,  Shaunak Mukherjee ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/768 ,  H01L23/532 ,  H01L21/033 ,  H01L21/3105 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/53228

Abstract: Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.

公开(公告)号：US20170207087A1

公开(公告)日：2017-07-20

申请号：US15406116

申请日：2017-01-13

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Pramit Manna ,  Rui Cheng ,  Abhijit Basu Mallick

IPC: H01L21/033 ,  H01L21/02

Abstract: Methods of forming a tungsten film comprising forming a boron seed layer on an oxide surface, an optional tungsten initiation layer on the boron seed layer and a tungsten containing film on the boron seed layer or tungsten initiation layer are described. Film stack comprising a boron seed layer on an oxide surface with an optional tungsten initiation layer and a tungsten containing film are also described.

公开(公告)号：US09583332B2

公开(公告)日：2017-02-28

申请号：US14590624

申请日：2015-01-06

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Kiran V. Thadani ,  Abhijit Basu Mallick

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L21/687 ,  C23C16/40 ,  C23C16/56 ,  H01J37/32

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/56 ,  H01J37/32449 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/68742 ,  H01L21/68792

Abstract: Implementations described herein generally relate to methods for dielectric gap-fill. In one implementation, a method of depositing a silicon oxide layer on a substrate is provided. The method comprises introducing a cyclic organic siloxane precursor and an aliphatic organic siloxane precursor into a deposition chamber, reacting the cyclic organic siloxane precursor and the aliphatic organic siloxane precursor with atomic oxygen to form the silicon oxide layer on a substrate positioned in the deposition chamber, wherein the substrate is maintained at a temperature between about 0° C. and about 200° C. as the silicon oxide layer is formed, wherein the silicon oxide layer is initially flowable following deposition, and wherein a ratio of a flow rate of the cyclic organic siloxane precursor to a flow rate of the aliphatic organic siloxane precursor is at least 2:1 and curing the deposited silicon oxide layer.

Abstract translation: 本文描述的实现方式通常涉及电介质间隙填充的方法。 在一个实施方案中，提供了在衬底上沉积氧化硅层的方法。 该方法包括将环状有机硅氧烷前体和脂族有机硅氧烷前体引入沉积室，使环状有机硅氧烷前体与脂族有机硅氧烷前体与原子氧反应，在位于沉积室中的基底上形成氧化硅层， 其中当形成氧化硅层时，所述衬底保持在约0℃至约200℃之间的温度，其中所述氧化硅层在沉积后最初可流动，并且其中所述循环 有机硅氧烷前体与脂族有机硅氧烷前体的流速为至少2:1，并固化沉积的氧化硅层。

公开(公告)号：US09362107B2

公开(公告)日：2016-06-07

申请号：US14502492

申请日：2014-09-30

Applicant: Applied Materials, Inc.

Inventor： Kiran V. Thadani ,  Abhijit Basu Mallick ,  Sanjay Kamath

IPC: H01L21/02 ,  H01L21/762 ,  H01L21/768

CPC classification number: H01L21/02126 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/76224 ,  H01L21/76837

Abstract: Methods are described for forming a flowable low-k dielectric film on a patterned substrate. The film may be a silicon-carbon-oxygen (Si—C—O) layer in which the silicon and carbon constituents come from a silicon and carbon containing precursor while the oxygen may come from an oxygen-containing precursor activated in a remote plasma region. Shortly after deposition, the silicon-carbon-oxygen layer is treated by exposure to a hydrogen-and-nitrogen-containing precursor such as ammonia prior to curing. The treatment may remove residual moisture from the silicon-carbon-oxygen layer and may make the lattice more resilient during curing and subsequent processing. The treatment may reduce shrinkage of the silicon-carbon-oxygen layer during subsequent processing.

Abstract translation: 描述了在图案化衬底上形成可流动的低k电介质膜的方法。 该膜可以是硅 - 碳 - 氧（Si-C-O）层，其中硅和碳成分来自含硅和碳的前体，而氧可以来自在远程等离子体区域中激活的含氧前体 。 沉积后不久，在固化之前通过暴露于含氢和氮的前体如氨来处理硅 - 碳 - 氧层。 该处理可以从硅 - 碳 - 氧层去除残留的水分，并且可以使晶格在固化和随后的加工过程中更有弹性。 该处理可以在随后的处理期间减小硅 - 碳 - 氧层的收缩。