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    Wafer level light-emitting diode array and method for manufacturing same
    172.
    发明授权
    Wafer level light-emitting diode array and method for manufacturing same 有权
    晶圆级发光二极管阵列及其制造方法

    公开(公告)号：US09318530B2

    公开(公告)日：2016-04-19

    申请号：US14420175

    申请日：2013-08-06

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Min Jang ,  Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Won Young Roh ,  Min Woo Kang ,  Hyun A Kim

    IPC: H01L27/15 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/40 ,  H01L33/46 ,  H01L33/62

    CPC classification number: H01L27/156 ,  H01L33/382 ,  H01L33/385 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025

    Abstract: Disclosed are a light emitting diode array on a wafer level and a method of forming the same. The light emitting diode array includes a growth substrate; a plurality of light emitting diodes arranged on the substrate, wherein each of the plurality of light emitting diodes has a first semiconductor layer, an active layer and a second semiconductor layer; and a plurality of upper electrodes arranged on the plurality of light emitting diodes and formed of an identical material, wherein each of the plurality of upper electrodes is electrically connected to the first semiconductor layer of a respective one of the light emitting diodes. At least one of the upper electrodes is electrically connected to the second semiconductor layer of an adjacent one of the light emitting diodes, and another of the upper electrodes is insulated from the second semiconductor layer of an adjacent one of the light emitting diodes. Accordingly, it is possible to provide a light emitting diode array that can be driven under at a high voltage and simplify a forming process thereof.

    Abstract translation: 公开了一种晶圆级的发光二极管阵列及其形成方法。 发光二极管阵列包括生长衬底; 布置在所述基板上的多个发光二极管，其中所述多个发光二极管中的每一个具有第一半导体层，有源层和第二半导体层; 以及多个上电极，其布置在所述多个发光二极管上并由相同的材料形成，其中所述多个上电极中的每一个电连接到所述发光二极管中的相应一个的所述第一半导体层。 上部电极中的至少一个电连接到相邻的一个发光二极管的第二半导体层，另一个上部电极与相邻发光二极管的第二半导体层绝缘。 因此，可以提供可以在高电压下驱动的发光二极管阵列并简化其形成过程。

    LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME
    174.
    发明申请
    LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME 有权
    发光二极管，其制造方法和具有该发光二极管的LED模块

    公开(公告)号：US20150380620A1

    公开(公告)日：2015-12-31

    申请号：US14848232

    申请日：2015-09-08

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Min Woo Kang ,  Hyun A Kim

    IPC: H01L33/62 ,  H01L33/00 ,  H01L33/40

    CPC classification number: H01L33/14 ,  H01L33/005 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2933/0016

    Abstract: Disclosed are a light emitting diode (LED), an LED module including the same, and a method of fabricating the same. The light emitting diode includes a first conductive-type semiconductor layer; a second conductive-type semiconductor layer; an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; a first electrode pad region electrically connected to the first conductive-type semiconductor layer; a second electrode pad region electrically connected to the second conductive-type semiconductor layer; and a spark gap formed between a first leading end electrically connected to the first electrode pad region and a second leading end electrically connected to the second electrode pad region. The spark gap can achieve electrostatic discharge protection of the light emitting diode.

    Abstract translation: 公开了一种发光二极管（LED），包括其的LED模块及其制造方法。 发光二极管包括第一导电型半导体层; 第二导电型半导体层; 插入在所述第一导电型半导体层和所述第二导电型半导体层之间的有源层; 电连接到第一导电型半导体层的第一电极焊盘区; 电连接到第二导电型半导体层的第二电极焊盘区域; 以及形成在电连接到第一电极焊盘区域的第一前端与电连接到第二电极焊盘区域的第二前端之间形成的火花隙。 火花隙可以实现发光二极管的静电放电保护。

    WAFER LEVEL LIGHT-EMITTING DIODE ARRAY
    176.
    发明申请
    WAFER LEVEL LIGHT-EMITTING DIODE ARRAY 有权
    水平发光二极管阵列

    公开(公告)号：US20150280086A1

    公开(公告)日：2015-10-01

    申请号：US14426723

    申请日：2013-08-06

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jong Min Jang ,  Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Hyun A. Kim ,  Won Young Roh ,  Min Woo Kang

    IPC: H01L33/62 ,  H01L33/38 ,  H01L33/40 ,  H01L27/15

    CPC classification number: H01L33/62 ,  H01L27/153 ,  H01L27/156 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    Abstract: A wafer level light-emitting diode (LED) array includes: a growth substrate; a plurality of LEDs arranged over the substrate, each including a first semiconductor layer, an activation layer, and a second semiconductor layer; a plurality of upper electrodes formed from a common material and electrically connected to the first semiconductor layers of the corresponding LEDs; and first and second pads arranged over the upper electrodes. The LEDs are connected in series by the upper electrodes, the first pad is electrically connected to an input LED from among the LEDs connected in series, and the second pad is electrically connected to an output LED from among the LEDs connected in series. Accordingly, a flip chip-type LED array can be provided which can be driven with a high voltage.

    Abstract translation: 晶圆级发光二极管（LED）阵列包括：生长衬底; 布置在所述基板上的多个LED，每个LED包括第一半导体层，激活层和第二半导体层; 多个上电极，由公共材料形成并与相应LED的第一半导体层电连接; 以及布置在上电极上的第一和第二焊盘。 LED通过上电极串联连接，第一焊盘与串联连接的LED中的输入LED电连接，第二焊盘与串联连接的LED中的输出LED电连接。 因此，可以提供可以以高电压驱动的倒装芯片型LED阵列。

    WAFER LEVEL LIGHT-EMITTING DIODE ARRAY
    177.
    发明申请
    WAFER LEVEL LIGHT-EMITTING DIODE ARRAY 有权
    水平发光二极管阵列

    公开(公告)号：US20150255504A1

    公开(公告)日：2015-09-10

    申请号：US14722011

    申请日：2015-05-26

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Min Jang ,  Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Hyun A. Kim ,  Won Young Roh ,  Min Woo Kang

    IPC: H01L27/15 ,  H01L33/62

    CPC classification number: H01L27/153 ,  H01L27/156 ,  H01L33/20 ,  H01L33/405 ,  H01L33/44 ,  H01L33/60 ,  H01L33/62

    Abstract: A light emitting diode array is provide to include: a substrate; light emitting diodes positioned over the substrate, each including a first semiconductor layer, an active layer, and a second semiconductor layer, wherein each light emitting diode is disposed to form a first via hole structure exposing a portion of the corresponding first semiconductor layer; lower electrodes disposed over the second semiconductor layer; a first interlayer insulating layer disposed over the lower electrodes and configured to expose the portion of the first semiconductor layer of corresponding light emitting diodes; upper electrodes electrically connected to the first semiconductor layer through the first via hole structure, wherein the first via hole structure is disposed in parallel with one side of the corresponding second semiconductor layer and the first interlayer insulating layer is disposed to form a second via hole structure exposing a portion of the lower electrodes.

    Abstract translation: 发光二极管阵列提供包括：基板; 位于衬底上的发光二极管，每个包括第一半导体层，有源层和第二半导体层，其中每个发光二极管被设置成形成暴露相应的第一半导体层的一部分的第一通孔结构; 设置在所述第二半导体层上的下电极; 第一层间绝缘层，设置在所述下电极上并且被配置为暴露所述对应的发光二极管的所述第一半导体层的所述部分; 上电极通过第一通孔结构与第一半导体层电连接，其中第一通孔结构与对应的第二半导体层的一侧平行设置，并且第一层间绝缘层设置成形成第二通孔结构 暴露下部电极的一部分。

    Display device having light emitting stacked structure
    179.
    发明授权
    Display device having light emitting stacked structure 有权

    公开(公告)号：US12230666B2

    公开(公告)日：2025-02-18

    申请号：US18075247

    申请日：2022-12-05

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Chung Hoon Lee ,  Jong Hyeon Chae

    IPC: H01L27/15 ,  H01L25/075 ,  H01L33/08 ,  H01L33/30 ,  H01L33/40 ,  H01L33/62 ,  G09G3/32 ,  H01L33/22

    Abstract: A display apparatus including a plurality of pixel regions disposed on a support substrate, each of the pixel regions including a plurality of subpixel stacks including a first epitaxial stack, a second epitaxial stack, and a third epitaxial stack, in which light generated from the first epitaxial stack is to be emitted to the outside of the display apparatus through the second and third epitaxial stacks, light generated from the second epitaxial stack is to be emitted to the outside of the display apparatus through the third epitaxial stack, during operation, one of the subpixel stacks within each pixel region is configured to be selected and driven, and at least one subpixel stack further includes an electrode disposed between the first epitaxial stack and the support substrate to be in ohmic contact with the first epitaxial stack.

    Light emitting device for display and display apparatus having the same
    180.
    发明授权
    Light emitting device for display and display apparatus having the same 有权

    公开(公告)号：US12154934B2

    公开(公告)日：2024-11-26

    申请号：US17970573

    申请日：2022-10-21

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jong Hyeon Chae ,  Seom Geun Lee ,  Seong Kyu Jang

    IPC: H01L27/15 ,  H01L25/075 ,  H01L33/00 ,  H01L33/22 ,  H01L33/42 ,  H01L33/60 ,  H01L33/62

    Abstract: A light emitting device for a display including a first LED stack configured to generate light having a first peak wavelength, a second LED stack disposed under the first LED stack, and configured to generate light having a second peak wavelength, a third LED stack disposed under the second LED stack, and configured to generate light having a third peak wavelength; and a floating reflection layer disposed over the first LED stack, in which the first peak wavelength is longer than the second and third peak wavelengths, the first LED stack has a roughened surface to increase the luminous intensity of the light generated in the first LED stack entering the second LED stack, and the floating reflection layer has a high reflectance of 80% or more over light having the first peak wavelength.

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