THERMAL MANAGEMENT SOLUTIONS FOR STACKED INTEGRATED CIRCUIT DEVICES USING JUMPING DROPS VAPOR CHAMBERS

    公开(公告)号:US20190393192A1

    公开(公告)日:2019-12-26

    申请号:US16014313

    申请日:2018-06-21

    Abstract: An integrated circuit structure may be formed having a first integrated circuit device, a second integrated circuit device electrically coupled to the first integrated circuit device with a plurality of device-to-device interconnects, and at least one jumping drops vapor chamber between the first integrated circuit device and the second integrated circuit device wherein at least one device-to-device interconnect of the plurality of device-to-device interconnects extends through the jumping drops vapor chamber. In one embodiment, the integrated circuit structure may include three or more integrated circuit devices with at least two jumping drops vapor chambers disposed between the three or more integrated circuit devices. In a further embodiment, the two jumping drops chambers may be in fluid communication with one another.

    THERMAL MANAGEMENT SOLUTIONS FOR STACKED INTEGRATED CIRCUIT DEVICES

    公开(公告)号:US20190385933A1

    公开(公告)日:2019-12-19

    申请号:US16007269

    申请日:2018-06-13

    Abstract: An integrated circuit assembly may be formed having a substrate, a first integrated circuit device electrically attached to the substrate, a second integrated circuit device electrically attached to the first integrated circuit device, and a heat dissipation device defining a fluid chamber, wherein at least a portion of the first integrated circuit device and at least a portion of the second integrated circuit device are exposed to the fluid chamber. In further embodiments, at least one channel may be formed in an underfill material between the first integrated circuit device and the second integrated circuit device, between the first integrated circuit device and the substrate, and/or between the second integrated circuit device and the substrate, wherein the at least one channel is open to the fluid chamber.

    THERMAL MANAGEMENT SOLUTIONS FOR STACKED INTEGRATED CIRCUIT DEVICES

    公开(公告)号:US20190385931A1

    公开(公告)日:2019-12-19

    申请号:US16007255

    申请日:2018-06-13

    Abstract: An integrated circuit assembly may be formed having a substrate, a first integrated circuit device electrically attached to the substrate, a second integrated circuit device electrically attached to the first integrated circuit device, and a heat dissipation device defining a fluid chamber, wherein at least a portion of the first integrated circuit device and at least a portion of the second integrated circuit device are exposed to the fluid chamber. In further embodiments, at least one channel may be formed in an underfill material between the first integrated circuit device and the second integrated circuit device, between the first integrated circuit device and the substrate, and/or between the second integrated circuit device and the substrate, wherein the at least one channel is open to the fluid chamber.

    THERMAL MANAGEMENT SOLUTIONS FOR STACKED INTEGRATED CIRCUIT DEVICES USING UNIDIRECTIONAL HEAT TRANSFER DEVICES

    公开(公告)号:US20190343017A1

    公开(公告)日:2019-11-07

    申请号:US15970420

    申请日:2018-05-03

    Abstract: An integrated circuit structure may be formed having a first integrated circuit device, a second integrated circuit device electrically coupled to the first integrated circuit device, and at least one unidirectional heat transfer device between the first integrated circuit device and the second integrated circuit device. In one embodiment, the unidirectional heat transfer device may be oriented such that it has a higher conductivity in the direction of heat transfer from the first integrated circuit device to the second integrated circuit device than it does in the opposite direction. When the temperature of the second integrated circuit device rises above the temperature of the first integrated circuit device, the unidirectional heat transfer device will act as a thermal insulator, and when the temperature of the first integrated circuit device rises above the temperature of the second integrated circuit device, the unidirectional heat transfer device will act as a thermal conductor.

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