Abstract:
A resistant based thermal probe including a nanometer sized four-leg filament integrated with a piezoresistive AFM type cantilever is created by depositing the filament structure onto the cantilever by a chemical vapor deposition technique where the cantilever is exposed to the flux of precursor gas. An incident electron beam causes a fragmentation of the gas molecules leaving a deposit behind which leads to a conductive deposit shaped as a multi-leg filament structure for thermal measurements of a sample. A deposited four leg filament structure has a mechanical rigidity, high spatial resolution, low thermal conductivity and thermal capacitance, fast response time, and in combination with a four point resistant measurement and lock-in technique, eliminates resistivity for increasing both the temperature sensitivity and the signal-to-noise ratio of the thermal probe.
Abstract:
The present invention relates to a membrane comprising at least one molecular monolayer composed of low-molecular aromatics and cross-linked in the lateral direction, wherein the membrane has a thickness in the range from 1 to 200 nm and a perforation in the form of openings having a diameter in the range from 0.1 nm to 1 μm, to a method for the production thereof, and to a use thereof.
Abstract:
The invention relates to a method for analyzing a defect of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range (EUV mask) comprising the steps of: (a) generating at least one focus stack relating to the defect using an EUV mask inspection tool, (b) determining a surface configuration of the EUV mask at a position of the defect, (c) providing model structures having the determined surface configuration which have different phase errors and generating the respective focus stacks, and (d) determining a three dimensional error structure of the EUV mask defect by comparing the at least one generated focus stack of the defect and the generated focus stacks of the model structures.
Abstract:
The invention relates to a method for electron beam induced deposition of electrically conductive material from a metal carbonyl with the method steps of providing at least one electron beam at a position of a substrate, storing at least one metal carbonyl at a first temperature, and heating the at least one metal carbonyl to at least one second temperature prior to the provision at the position at which the at least one electron beam impacts on the substrate.
Abstract:
This invention relates to electron guns, each comprising of an indirectly heated cathode, a gate electrode and an anode, for generating electron beams of various shapes and power that are preferably used to machine workpieces. Thus cathodes can be used with various geometric designs. Thus cathodes of the most varied geometrical shapes can be used. Along with band cathodes and band cathodes with bodies attached to them, massive cathodes such as bolt-type cathodes can also be applied. Using massive bodies results in a longer service life of the cathode as compared to band cathodes. Another benefit is that the service life of the heat source for the cathode is identical to the service life of the laser used. It is particularly advantageous to place the laser outside the housing, which ensures a very long service life of this source of heat. At the same time, the solution according to the invention is distinguished by an indirect temperature measurement of the cathode. This allows the radiation property to be controlled and improved. There is thus a type of compensation for the effects of the craters that may occur on the emission surface of the cathode.
Abstract:
The invention relates to a method for electron beam induced etching of a material (100, 200) with the method steps providing at least one etching gas at a position of the material (100, 200) at which an electron beam impacts on the material (100, 200) and simultaneously providing at least one passivation gas which is adapted for slowing down or inhibiting a spontaneous etching by the at least one etching gas.
Abstract:
The invention relates to a method for electron beam induced etching of a layer contaminated with gallium, with the method steps of providing at least one first halogenated compound as an etching gas at the position at which an electron beam impacts on the layer, and providing at least one second halogenated compound as a precursor gas for removing of the gallium from this position.