公开(公告)号：US09008194B2

公开(公告)日：2015-04-14

申请号：US14239535

申请日：2011-12-14

Applicant: Hong June Park ,  Jong Hoon Kim ,  Soo Min Lee

Inventor： Hong June Park ,  Jong Hoon Kim ,  Soo Min Lee

IPC: H04B3/00 ,  H04B1/38 ,  H04B1/40 ,  H04L25/02 ,  H04L25/03 ,  H04L25/08

CPC classification number: H04B1/40 ,  H04L25/0278 ,  H04L25/0298 ,  H04L25/03057 ,  H04L25/03949 ,  H04L25/085 ,  H04L2025/0377

Abstract: The present invention relates to a low-power and high-speed transmission and reception apparatus which reduces consumption power of a sending-end circuit by increasing a value of a termination resistor included in a sending-end circuit and a receiving-end circuit so that the value is greater than a characteristic impedance value of a transmission line.

Abstract translation: 本发明涉及通过增加发送端电路和接收端电路中包含的终端电阻的值来降低发送端电路的消耗功率的低功率，高速的发送和接收装置， 该值大于传输线的特征阻抗值。

公开(公告)号：US20140211834A1

公开(公告)日：2014-07-31

申请号：US14239535

申请日：2011-12-14

Applicant: Hong June Park ,  Jong Hoon Kim ,  Soo Min Lee

Inventor： Hong June Park ,  Jong Hoon Kim ,  Soo Min Lee

IPC: H04B1/40 ,  H04L25/03

CPC classification number: H04B1/40 ,  H04L25/0278 ,  H04L25/0298 ,  H04L25/03057 ,  H04L25/03949 ,  H04L25/085 ,  H04L2025/0377

Abstract: The present invention relates to a low-power and high-speed transmission and reception apparatus which reduces consumption power of a sending-end circuit by increasing a value of a termination resistor included in a sending-end circuit and a receiving-end circuit so that the value is greater than a characteristic impedance value of a transmission line.

Abstract translation: 本发明涉及通过增加发送端电路和接收端电路中包含的终端电阻的值来降低发送端电路的消耗功率的低功率，高速的发送和接收装置， 该值大于传输线的特征阻抗值。

公开(公告)号：US20090278113A1

公开(公告)日：2009-11-12

申请号：US12333531

申请日：2008-12-12

Applicant: Hun Jae CHUNG ,  Cheol Soo SONE ,  Sung Hwan JANG ,  Rak Jun CHOI ,  Soo Min LEE

Inventor： Hun Jae CHUNG ,  Cheol Soo SONE ,  Sung Hwan JANG ,  Rak Jun CHOI ,  Soo Min LEE

IPC: H01L33/00

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: There is provided a nitride semiconductor light emitting device. A nitride semiconductor light emitting device according to an aspect of the invention may include: an n-type nitride semiconductor layer provided on a substrate; an active layer provided on the n-type nitride semiconductor layer, and including quantum barrier layers and quantum well layers; and a p-type nitride semiconductor layer provided on the active layer, wherein each of the quantum barrier layers includes a plurality of InxGa(1-x)N layers (0

Abstract translation: 提供了一种氮化物半导体发光器件。 根据本发明的一个方面的氮化物半导体发光器件可以包括：设置在衬底上的n型氮化物半导体层; 设置在n型氮化物半导体层上的有源层，并且包括量子势垒层和量子阱层; 以及设置在有源层上的p型氮化物半导体层，其中每个量子势垒层包括多个In x Ga（1-x）N层（0

公开(公告)号：US20090258453A1

公开(公告)日：2009-10-15

申请号：US12489819

申请日：2009-06-23

Applicant: Soo Min LEE ,  Cheol Kyu KIM ,  Jaeun YOO ,  Sung Hwan JANG ,  Masayoshi KOIKE

Inventor： Soo Min LEE ,  Cheol Kyu KIM ,  Jaeun YOO ,  Sung Hwan JANG ,  Masayoshi KOIKE

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  H01L21/02002 ,  H01L21/02389 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/0079

Abstract: In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.

Abstract translation: 在制造氮化物类化合物层的方法中，首先制备GaN衬底。 在GaN衬底上形成具有预定图案的掩模层，以暴露GaN衬底的部分区域。 然后在部分曝光的GaN衬底上形成缓冲层。 缓冲层由具有10％以下与GaN的晶格失配的材料制成。 此后，氮化物类化合物从缓冲层的顶表面朝向掩模层的顶表面横向生长，并且氮化物基化合物层垂直生长至预定厚度。 此外，通过湿蚀刻除去掩模层和缓冲层，以将氮化物基化合物层与GaN衬底分离。

公开(公告)号：US07569461B2

公开(公告)日：2009-08-04

申请号：US11471697

申请日：2006-06-21

Applicant: Soo Min Lee ,  Cheol Kyu Kim ,  Jaeun Yoo ,  Sung Hwan Jang ,  Masayoshi Koike

Inventor： Soo Min Lee ,  Cheol Kyu Kim ,  Jaeun Yoo ,  Sung Hwan Jang ,  Masayoshi Koike

IPC: H01L21/20

CPC classification number: H01L33/0075 ,  H01L21/02002 ,  H01L21/02389 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/0079

Abstract: In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.

Abstract translation: 在制造氮化物类化合物层的方法中，首先制备GaN衬底。 在GaN衬底上形成具有预定图案的掩模层，以暴露GaN衬底的部分区域。 然后在部分曝光的GaN衬底上形成缓冲层。 缓冲层由具有10％以下与GaN的晶格失配的材料制成。 此后，氮化物类化合物从缓冲层的顶表面朝向掩模层的顶表面横向生长，并且氮化物基化合物层垂直生长至预定厚度。 此外，通过湿蚀刻除去掩模层和缓冲层，以将氮化物基化合物层与GaN衬底分离。

公开(公告)号：US20080152570A1

公开(公告)日：2008-06-26

申请号：US11976237

申请日：2007-10-23

Applicant: Oleg Ledyaev ,  Ki Ho Park ,  Si Hyuk Lee ,  Soo Min Lee

Inventor： Oleg Ledyaev ,  Ki Ho Park ,  Si Hyuk Lee ,  Soo Min Lee

IPC: C30B25/00 ,  C01B21/00

CPC classification number: C30B25/18 ,  C30B29/403

Abstract: A method of growing a III group nitride single crystal by using a metal-organic chemical vapor deposition (MOCVD) process, the method including: preparing an r-plane (1-102) substrate; forming a nitride-based nucleation layer on the substrate; and growing a nonpolar a-plane nitride gallium single crystal on the nitride-based nucleation layer while altering increase and decrease of a ratio of V/III group to alternate a horizontal growth mode and a vertical growth mode.

Abstract translation: 一种通过使用金属有机化学气相沉积（MOCVD）法生长III族氮化物单晶的方法，所述方法包括：制备r-平面（1-102）衬底; 在基板上形成氮化物基成核层; 并且在氮化物基成核层上生长非极性a面平面氮化镓镓单晶，同时改变V / III基团的比例的增加和减小以交替水平生长模式和垂直生长模式。

公开(公告)号：US07135716B2

公开(公告)日：2006-11-14

申请号：US10911562

申请日：2004-08-05

Applicant: Je Won Kim ,  Jeong Tak Oh ,  Dong Joon Kim ,  Sun Woon Kim ,  Soo Min Lee

Inventor： Je Won Kim ,  Jeong Tak Oh ,  Dong Joon Kim ,  Sun Woon Kim ,  Soo Min Lee

IPC: H01L29/22

CPC classification number: H01L33/12 ,  H01L33/02 ,  H01L33/32

Abstract: A gallium nitride-based semiconductor light-emitting device includes a sapphire substrate having a nitridated upper surface; a polarity conversion layer formed on the sapphire substrate and made of MgN-based single ciystals; a first conductive gallium nitride-based semiconductor layer formed on the polarity conversion layer; an active layer formed on the first conductive gallium nitride-based semiconductor layer; and a second conductive gallium nitride-based semiconductor layer formed on the active layer.

Abstract translation: 氮化镓系半导体发光元件包括具有氮化上表面的蓝宝石衬底; 在蓝宝石衬底上形成的由MgN基单晶构成的极性转换层; 形成在极性转换层上的第一导电氮化镓基半导体层; 形成在第一导电氮化镓基半导体层上的有源层; 以及形成在有源层上的第二导电氮化镓基半导体层。

公开(公告)号：US07018912B2

公开(公告)日：2006-03-28

申请号：US10806432

申请日：2004-03-23

Applicant: Sun Woon Kim ,  In Eung Kim ,  Hun Joo Hahm ,  Soo Min Lee ,  Dong Joon Kim ,  Je Won Kim

Inventor： Sun Woon Kim ,  In Eung Kim ,  Hun Joo Hahm ,  Soo Min Lee ,  Dong Joon Kim ,  Je Won Kim

IPC: H01L21/00

CPC classification number: C30B29/406 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262 ,  Y10S438/967

Abstract: Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.

Abstract translation: 公开了一种在MOCVD反应器中制造氮化物半导体的方法。 首先将GaN沉积在MOCVD反应器的内壁上，并将蓝宝石衬底装载到MOCVD反应器中。 将蓝宝石衬底加热并将蚀刻气体注入到MOCVD反应器中。 将NH 3气体注入到MOCVD反应器中以使蓝宝石衬底的表面硝化。 在氮化蓝宝石衬底上生长氮化物半导体层。 通过表面改性蓝宝石衬底，然后通过MOCVD在表面改性的蓝宝石衬底上生长氮化物半导体层，而不形成低温缓冲层，可以实现优异的氮化物半导体结构。 在这种情况下，可以在表面处理的蓝宝石衬底上有效地生长例如GaN的氮化物半导体层，因为在蚀刻时在蓝宝石衬底上发生GaN沉积。

公开(公告)号：US20050072353A1

公开(公告)日：2005-04-07

申请号：US10837709

申请日：2004-05-04

Applicant: Soo Min Lee ,  Hun Hahm ,  Young Park

Inventor： Soo Min Lee ,  Hun Hahm ,  Young Park

IPC: C30B29/38 ,  C30B25/02 ,  C30B25/18 ,  C30B25/20 ,  C30B29/40 ,  H01L21/20 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: C30B29/40 ,  C30B25/02 ,  C30B25/20 ,  Y10S117/915

Abstract: Disclosed herein is a method of manufacturing a gallium nitride-based (AlxInyGa(1-x-y)N, where 0≦x≦1, 0≦y≦1, 0≦x+y≦1) single crystal substrate. The method comprises the steps of preparing a ZnO substrate, primarily growing a gallium nitride-based single crystal layer, and secondarily growing an additional gallium nitride-based single crystal layer on the primarily grown gallium nitride-based single crystal layer while removing the ZnO substrate by etching the underside of the ZnO substrate.

Abstract translation: 本文公开了一种制造氮化镓基（Al x In y Ga（1-xy）N）的方法，其中0 <= x <=1,0,0≤y≤1,0<= x + y <= 1）单晶 基质。 该方法包括以下步骤：制备ZnO衬底，主要生长氮化镓基单晶层，然后在主要生长的氮化镓基单晶层上再次生长附加的氮化镓基单晶层，同时去除ZnO衬底 通过蚀刻ZnO衬底的下侧。

公开(公告)号：US06562688B2

公开(公告)日：2003-05-13

申请号：US09747761

申请日：2000-12-21

Applicant: Tae-Hyeon Han ,  Byung Ryul Ryum ,  Soo-Min Lee ,  Deok-Ho Cho

Inventor： Tae-Hyeon Han ,  Byung Ryul Ryum ,  Soo-Min Lee ,  Deok-Ho Cho

IPC: H01L21331

CPC classification number: H01L29/66287 ,  H01L29/66242

Abstract: Disclosed are a method for manufacturing a homojunction or heterojunction bipolar device and a structure of the bipolar device manufactured by the method. The method comprises steps of forming a collector on a substrate including a buried collector to be contacted with the buried collector and protruded in the form of an island; depositing a collector dielectric film on the substrate on which the collector is formed; removing a protruded portion of the collector dielectric film covering the substrate; depositing a first semiconductor electrode layer on the substrate including the collector protruded over the collector dielectric film and flatting a surface of the first semiconductor electrode to expose only the collector formed of a semiconductor material and the first semiconductor electrode; and growing a base thin film including one of silicon and silicon-germanium on the substrate on which only the semiconductor material is exposed, thereby preventing the non-uniformity of a thickness of the base thin film, a contain rate of an impurity and a germanium distribution by the loading effect.

Abstract translation: 公开了用于制造均质结或异质结双极器件的方法和通过该方法制造的双极器件的结构。 该方法包括以下步骤：在包括与埋藏式收集器接触并以岛形式突出的埋地收集器的基板上形成集电器; 在其上形成集电极的基板上沉积集电极电介质膜; 去除覆盖所述基板的所述集电极电介质膜的突出部分; 在包括集电极电介质膜上的集电体的基板上沉积第一半导体电极层，使第一半导体电极的表面平坦化，仅露出由半导体材料形成的集电体和第一半导体电极; 并且在仅在其上仅露出半导体材料的基板上生长包括硅和硅锗之一的基底薄膜，从而防止基底薄膜的厚度不均匀，杂质含量和锗的含量 通过负载效应分配。