公开(公告)号：US10170282B2

公开(公告)日：2019-01-01

申请号：US14162000

申请日：2014-01-23

Applicant: Applied Materials, Inc.

Inventor： Xinglong Chen ,  Dmitry Lubomirsky ,  Shankar Venkataraman

IPC: H01J37/32 ,  C23C16/455

Abstract: An exemplary faceplate may include a conductive plate defining a plurality of apertures. The faceplate may additionally include a plurality of inserts, and each one of the plurality of inserts may be disposed within one of the plurality of apertures. Each insert may define at least one channel through the insert to provide a flow path through the faceplate.

公开(公告)号：US10062587B2

公开(公告)日：2018-08-28

申请号：US14996621

申请日：2016-01-15

Applicant: Applied Materials, Inc.

Inventor： Xinglong Chen ,  Jang-Gyoo Yang ,  Alexander Tam ,  Elisha Tam

IPC: B23Q3/00 ,  H01L21/67 ,  F28D15/00

CPC classification number: H01L21/67103 ,  F28D15/00 ,  H01L21/67109

Abstract: Substrate support assemblies for a semiconductor processing apparatus are described. The assemblies may include a pedestal and a stem coupled with the pedestal. The pedestal may be configured to provide multiple regions having independently controlled temperatures. Each region may include a fluid channel to provide a substantially uniform temperature control within the region, by circulating a temperature controlled fluid that is received from and delivered to internal channels in the stem. The fluid channels may include multiple portions configured in a parallel-reverse flow arrangement. The pedestal may also include fluid purge channels that may be configured to provide thermal isolation between the regions of the pedestal.

公开(公告)号：US09978564B2

公开(公告)日：2018-05-22

申请号：US14853838

申请日：2015-09-14

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dmitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: C23C16/455 ,  H01J37/32 ,  B05B1/00 ,  C23C16/452

CPC classification number: H01J37/32449 ,  B05B1/005 ,  B05B1/18 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45582 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/002 ,  H01L21/67069

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

公开(公告)号：US20170236691A1

公开(公告)日：2017-08-17

申请号：US15581357

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dmitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: H01J37/32 ,  B05B1/18 ,  H01L21/67 ,  B05B1/00 ,  C23C16/50 ,  C23C16/455

CPC classification number: H01J37/32449 ,  B05B1/005 ,  B05B1/18 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45582 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/002 ,  H01L21/67069

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

公开(公告)号：US20170229289A1

公开(公告)日：2017-08-10

申请号：US15581396

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Xinglong Chen ,  Shankar Venkataraman

IPC: H01J37/32 ,  C23C16/505 ,  C23C16/455 ,  H01L21/67

CPC classification number: H01J37/32357 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/54 ,  H01J37/32422 ,  H01J37/32449 ,  H01J37/32899 ,  H01L21/32136 ,  H01L21/67069

Abstract: An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the chamber through the second access. The first and second access may be fluidly coupled with a mixing region of the chamber that is separate from and fluidly coupled with the processing region of the chamber. The mixing region may be configured to allow the first and second precursors to interact with each other externally from the processing region of the chamber.

公开(公告)号：US09502218B2

公开(公告)日：2016-11-22

申请号：US14603638

申请日：2015-01-23

Applicant: Applied Materials, Inc.

Inventor： Xinglong Chen ,  Saurabh Garg ,  Jang-Gyoo Yang

IPC: H01J37/32 ,  C23C16/505 ,  C23C16/455 ,  H01L21/66 ,  C23C16/452 ,  C23C16/517 ,  H01L43/12 ,  H01L27/115 ,  H01L21/316 ,  H01L49/02

CPC classification number: H01J37/32422 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/517 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32495 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/00 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31691 ,  H01L21/67017 ,  H01L21/67069 ,  H01L22/26 ,  H01L27/11502 ,  H01L28/55 ,  H01L43/12

Abstract: Embodiments of the disclosure generally relate to a hybrid plasma processing system incorporating a remote plasma source (RPS) unit with a capacitively coupled plasma (CCP) unit for substrate processing. In one embodiment, the hybrid plasma processing system includes a CCP unit, comprising a lid having one or more through holes, and an ion suppression element, wherein the lid and the ion suppression element define a plasma excitation region, a RPS unit coupled to the CCP unit, and a gas distribution plate disposed between the ion suppression element and a substrate support, wherein the gas distribution plate and the substrate support defines a substrate processing region. In cases where process requires higher power, both CCP and RPS units may be used to generate plasma excited species so that some power burden is shifted from the CCP unit to the RPS unit, which allows the CCP unit to operate at lower power.

Abstract translation: 本公开的实施例一般涉及一种混合等离子体处理系统，其包括具有用于衬底处理的电容耦合等离子体（CCP）单元的远程等离子体源（RPS）单元。 在一个实施例中，混合等离子体处理系统包括CCP单元，其包括具有一个或多个通孔的盖子和离子抑制元件，其中盖子和离子抑制元件限定等离子体激发区域，RPS单元耦合到 CCP单元和设置在离子抑制元件和基板支撑件之间的气体分配板，其中气体分配板和基板支撑件限定基板处理区域。 在过程需要更高功率的情况下，CCP和RPS单元都可用于产生等离子体激发的物质，以使一些功率负载从CCP单元转移到RPS单元，这允许CCP单元以较低的功率工作。

公开(公告)号：US20160027673A1

公开(公告)日：2016-01-28

申请号：US14875479

申请日：2015-10-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/67 ,  H01L21/677

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US20140252134A1

公开(公告)日：2014-09-11

申请号：US14162000

申请日：2014-01-23

Applicant: Applied Materials, Inc.

Inventor： Xinglong Chen ,  Dmitry Lubomirsky ,  Shankar Venkataraman

IPC: H01L21/3065

CPC classification number: H01J37/3244 ,  C23C16/45565 ,  H01J37/32091 ,  H01J37/32357 ,  Y10T29/49826

Abstract: An exemplary faceplate may include a conductive plate defining a plurality of apertures. The faceplate may additionally include a plurality of inserts, and each one of the plurality of inserts may be disposed within one of the plurality of apertures. Each insert may define at least one channel through the insert to provide a flow path through the faceplate.

Abstract translation: 示例性面板可以包括限定多个孔的导电板。 面板可以另外包括多个插入件，并且多个插入件中的每一个可以设置在多个孔中的一个中。 每个插入件可以限定通过插入件的至少一个通道以提供通过面板的流动路径。

公开(公告)号：US20140248780A1

公开(公告)日：2014-09-04

申请号：US14186059

申请日：2014-02-21

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Dmitry Lubomirsky ,  Xinglong Chen ,  Shankar Venkataraman

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/334

Abstract: Methods of etching a patterned substrate may include flowing an oxygen-containing precursor into a first remote plasma region fluidly coupled with a substrate processing region. The oxygen-containing precursor may be flowed into the region while forming a plasma in the first remote plasma region to produce oxygen-containing plasma effluents. The methods may also include flowing a fluorine-containing precursor into a second remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the second remote plasma region to produce fluorine-containing plasma effluents. The methods may include flowing the oxygen-containing plasma effluents and fluorine-containing plasma effluents into the processing region, and using the effluents to etch a patterned substrate housed in the substrate processing region.

Abstract translation: 蚀刻图案化衬底的方法可以包括使含氧前体流入与衬底处理区流体耦合的第一远程等离子体区域。 可以在第一远程等离子体区域中形成等离子体的同时将含氧前体流入该区域以产生含氧等离子体流出物。 所述方法还可以包括使含氟前体流入与基板处理区流体耦合的第二远程等离子体区域，同时在第二远程等离子体区域中形成等离子体以产生含氟等离子体流出物。 所述方法可以包括将含氧等离子体流出物和含氟等离子体流出物流入处理区域，并且使用流出物蚀刻容纳在基板处理区域中的图案化基板。

公开(公告)号：US12146219B2

公开(公告)日：2024-11-19

申请号：US16745141

申请日：2020-01-16

Applicant: Applied Materials, Inc.

Inventor： Kien N. Chuc ,  Qiwei Liang ,  Hanh D. Nguyen ,  Xinglong Chen ,  Matthew Miller ,  Soonam Park ,  Toan Q. Tran ,  Adib M. Khan ,  Jang-Gyoo Yang ,  Dmitry Lubomirsky ,  Shankar Venkataraman

IPC: C23C16/455 ,  C23C16/452 ,  H01J37/32

Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.