公开(公告)号：US20220415677A1

公开(公告)日：2022-12-29

申请号：US17848933

申请日：2022-06-24

Applicant: ASM IP Holding B.V.

Inventor： Junwei Su ,  Rutvij Naik ,  Xing Lin ,  Alexandros Demos ,  Hamed Esmaeilzadehkhosravieh

IPC: H01L21/67 ,  C23C16/48 ,  G02B5/02

Abstract: A reflector includes a reflector body arranged to overlap a reaction chamber of a semiconductor processing system. The reflector body has a grooved surface and a reflective surface extending between a first longitudinal edge of the reflector body and a second longitudinal edge of the reflector body, the reflective surface spaced apart from the grooved surface by a thickness of the reflector body. The grooved surface and the reflective surface define a pyrometer port, two or more elongated slots, and two or more shortened extending through the thickness of the reflector body. The shortened slots outnumber the elongated slots to bias issue of a coolant against the reaction chamber toward the second longitudinal edge of the reflector body. Cooling kits, semiconductor processing systems, and methods of cooling a reaction chamber during deposition of a film onto a substrate supported within the reaction chamber are also described.

公开(公告)号：US20220352006A1

公开(公告)日：2022-11-03

申请号：US17730967

申请日：2022-04-27

Applicant: ASM IP Holding B.V.

Inventor： Shujin Huang ,  Junwei Su ,  Xing Lin ,  Alexandros Demos ,  Rutvij Naik ,  Wentao Wang ,  Matthew Goodman ,  Robin Scott ,  Amir Kajbafvala ,  Robinson James ,  Youness Alvandi-Tabrizi ,  Caleb Miskin

IPC: H01L21/687 ,  C23C16/52 ,  C23C16/458

Abstract: A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.

公开(公告)号：US11482533B2

公开(公告)日：2022-10-25

申请号：US16789138

申请日：2020-02-12

Applicant: ASM IP Holding B.V.

Inventor： BokHeon Kim ,  David Kohen ,  Alexandros Demos

IPC: H01L27/108 ,  H01L29/94 ,  H01L27/115 ,  H01L21/28 ,  H01L27/11582 ,  H01L27/11556 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311

Abstract: An apparatus and a method for forming a 3-D NAND device are disclosed. The method of forming the 3-D NAND device may include forming a plug fill and a void. Advantages gained by the apparatus and method may include a lower cost, a higher throughput, little to no contamination of the device, little to no damage during etching steps, and structural integrity to ensure formation of a proper stack of oxide-nitride bilayers.

公开(公告)号：US20200266208A1

公开(公告)日：2020-08-20

申请号：US16789138

申请日：2020-02-12

Applicant: ASM IP Holding B.V.

Inventor： BokHeon Kim ,  David Kohen ,  Alexandros Demos

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L21/02 ,  H01L21/311 ,  H01L21/306

Abstract: An apparatus and a method for forming a 3-D NAND device are disclosed. The method of forming the 3-D NAND device may include forming a plug fill and a void. Advantages gained by the apparatus and method may include a lower cost, a higher throughput, little to no contamination of the device, little to no damage during etching steps, and structural integrity to ensure formation of a proper stack of oxide-nitride bilayers.

公开(公告)号：US20200040458A1

公开(公告)日：2020-02-06

申请号：US16055532

申请日：2018-08-06

Applicant: ASM IP Holding B.V.

Inventor： Mingyang Ma ,  Junwei Su ,  Alexandros Demos ,  Xing Lin ,  Sam Kim ,  Gregory Michael Bartlett

IPC: C23C16/52 ,  C23C16/455 ,  C23C16/44 ,  H01J37/32 ,  B01J4/00

Abstract: A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.

公开(公告)号：US20250079167A1

公开(公告)日：2025-03-06

申请号：US18815636

申请日：2024-08-26

Applicant: ASM IP Holding B.V.

Inventor： Ernesto Suarez ,  Amir Kajbafvala ,  Arun Murali ,  Caleb Miskin ,  Alexandros Demos

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/3065 ,  H01L29/167

Abstract: A method of forming a semiconductor structure includes seating a substrate on a substrate support arranged within a chamber arrangement of a semiconductor processing system, flowing a boron-containing precursor to the chamber arrangement at a first boron-containing precursor mass flow rate, and depositing a first portion of a first SiGe:B layer using the boron-containing precursor. Mass flow rate of the boron-containing precursor to an intermediate boron-containing precursor flow rate, a second portion of the first SiGe:B layer is deposited using the boron-containing precursor, mass flow rate of the boron-containing precursor to the chamber arrangement is further increased to a second boron-containing precursor mass flow rate, and a second SiGe:B layer is deposited onto the first SiGe:B layer using the boron-containing precursor, the increase in the mass flow rate of the boron-containing precursor to the intermediate boron-containing precursor mass flow rate limits boron concentration at a first SiGe:B layer-to-second SiGe:B layer interface defined between the first SiGe:B layer and the second SiGe:B layer to less than a boron concentration within the second SiGe:B layer. Semiconductor processing systems and related computer program products are also provided.

公开(公告)号：US12006572B2

公开(公告)日：2024-06-11

申请号：US17060507

申请日：2020-10-01

Applicant: ASM IP Holding B.V.

Inventor： Xing Lin ,  Peipei Gao ,  Prajwal Nagaraj ,  Mingyang Ma ,  Wentao Wang ,  Ion Hong Chao ,  Alexandros Demos ,  Paul Ma ,  Hichem M'Saad

IPC: H01J37/32 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/45582 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/32357 ,  H01J37/3244

Abstract: A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.

公开(公告)号：US20240175138A1

公开(公告)日：2024-05-30

申请号：US18518393

申请日：2023-11-22

Applicant: ASM IP HOlding B.V.

Inventor： Fan Gao ,  Peipei Gao ,  Xing Lin ,  Arun Murali ,  Gregory Deye ,  Frederick Aryeetey ,  Amir Kajbafvala ,  Caleb Miskin ,  Alexandros Demos

IPC: C23C16/52 ,  C23C16/44 ,  C23C16/46 ,  H01L21/67

CPC classification number: C23C16/52 ,  C23C16/4412 ,  C23C16/46 ,  H01L21/67017 ,  H01L21/67126 ,  H01L21/67253

Abstract: Systems and methods controlling the pressure differential between two sealed chambers connected by a gate valve in preparation for a gate valve opening event. Such systems and methods may adjust gas pressure in at least one of the chambers, if needed, until the pressure differential between the two chambers is at a predetermined pressure differential level. In some more specific examples, one chamber may constitute a substrate handling chamber, the other chamber may constitute a reaction chamber (e.g., for depositing one or more layers on a surface of a substrate), and the gate valve opening event may allow a substrate to be transferred from one chamber to the other (e.g., from the reaction chamber into the substrate handling chamber).

公开(公告)号：US20240112930A1

公开(公告)日：2024-04-04

申请号：US18476117

申请日：2023-09-27

Applicant: ASM IP Holding, B.V.

Inventor： Fan Gao ,  Peipei Gao ,  Wentao Wang ,  Kai Zhou ,  Kishor Patil ,  Han Ye ,  Xing Lin ,  Alexandros Demos

IPC: H01L21/67 ,  B23K26/03 ,  B23K26/06 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C23C16/52 ,  G05D23/19

CPC classification number: H01L21/67115 ,  B23K26/034 ,  B23K26/0626 ,  B23K26/0643 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/483 ,  C23C16/52 ,  G05D23/1931 ,  H01L21/67109

Abstract: A chamber arrangement includes a chamber body, a substrate support, and a laser source. The substrate support is arranged within the chamber body and supported for rotation about a rotation axis relative to the chamber body. The laser source is arranged outside of the chamber body and optically coupled to the substrate support along a lasing axis. The lasing axis intersects the substrate support at a location radially outward from an outer periphery of a substrate seated on the substrate support. A semiconductor processing system and a material layer deposition method are also described.

公开(公告)号：US20240071805A1

公开(公告)日：2024-02-29

申请号：US18238577

申请日：2023-08-28

Applicant: ASM IP Holding B.V.

Inventor： Han Ye ,  Peipei Gao ,  Wentao Wang ,  Aniket Chitale ,  Xing Lin ,  Alexandros Demos ,  Yanfu Lu

IPC: H01L21/687 ,  H01L21/67

CPC classification number: H01L21/68735 ,  H01L21/67069

Abstract: Methods, systems, and assemblies suitable for gas-phase processes are disclosed. An exemplary assembly includes a susceptor ring and at least one injector tube. The injector tube can be disposed within the susceptor ring to provide a gas to a lower chamber area of a reactor. Methods, systems, and assemblies can be used to obtain desired etching and purging of the lower chamber area.