公开(公告)号：US20220415677A1

公开(公告)日：2022-12-29

申请号：US17848933

申请日：2022-06-24

申请人： ASM IP Holding B.V.

发明人： Junwei Su ,  Rutvij Naik ,  Xing Lin ,  Alexandros Demos ,  Hamed Esmaeilzadehkhosravieh

IPC分类号： H01L21/67 ,  C23C16/48 ,  G02B5/02

摘要： A reflector includes a reflector body arranged to overlap a reaction chamber of a semiconductor processing system. The reflector body has a grooved surface and a reflective surface extending between a first longitudinal edge of the reflector body and a second longitudinal edge of the reflector body, the reflective surface spaced apart from the grooved surface by a thickness of the reflector body. The grooved surface and the reflective surface define a pyrometer port, two or more elongated slots, and two or more shortened extending through the thickness of the reflector body. The shortened slots outnumber the elongated slots to bias issue of a coolant against the reaction chamber toward the second longitudinal edge of the reflector body. Cooling kits, semiconductor processing systems, and methods of cooling a reaction chamber during deposition of a film onto a substrate supported within the reaction chamber are also described.

公开(公告)号：US20220352006A1

公开(公告)日：2022-11-03

申请号：US17730967

申请日：2022-04-27

申请人： ASM IP Holding B.V.

发明人： Shujin Huang ,  Junwei Su ,  Xing Lin ,  Alexandros Demos ,  Rutvij Naik ,  Wentao Wang ,  Matthew Goodman ,  Robin Scott ,  Amir Kajbafvala ,  Robinson James ,  Youness Alvandi-Tabrizi ,  Caleb Miskin

IPC分类号： H01L21/687 ,  C23C16/52 ,  C23C16/458

摘要： A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.

公开(公告)号：US11482533B2

公开(公告)日：2022-10-25

申请号：US16789138

申请日：2020-02-12

申请人： ASM IP Holding B.V.

发明人： BokHeon Kim ,  David Kohen ,  Alexandros Demos

IPC分类号： H01L27/108 ,  H01L29/94 ,  H01L27/115 ,  H01L21/28 ,  H01L27/11582 ,  H01L27/11556 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311

摘要： An apparatus and a method for forming a 3-D NAND device are disclosed. The method of forming the 3-D NAND device may include forming a plug fill and a void. Advantages gained by the apparatus and method may include a lower cost, a higher throughput, little to no contamination of the device, little to no damage during etching steps, and structural integrity to ensure formation of a proper stack of oxide-nitride bilayers.

公开(公告)号：US20200266208A1

公开(公告)日：2020-08-20

申请号：US16789138

申请日：2020-02-12

申请人： ASM IP Holding B.V.

发明人： BokHeon Kim ,  David Kohen ,  Alexandros Demos

IPC分类号： H01L27/11582 ,  H01L27/11556 ,  H01L21/02 ,  H01L21/311 ,  H01L21/306

摘要： An apparatus and a method for forming a 3-D NAND device are disclosed. The method of forming the 3-D NAND device may include forming a plug fill and a void. Advantages gained by the apparatus and method may include a lower cost, a higher throughput, little to no contamination of the device, little to no damage during etching steps, and structural integrity to ensure formation of a proper stack of oxide-nitride bilayers.

公开(公告)号：US20200040458A1

公开(公告)日：2020-02-06

申请号：US16055532

申请日：2018-08-06

申请人： ASM IP Holding B.V.

发明人： Mingyang Ma ,  Junwei Su ,  Alexandros Demos ,  Xing Lin ,  Sam Kim ,  Gregory Michael Bartlett

IPC分类号： C23C16/52 ,  C23C16/455 ,  C23C16/44 ,  H01J37/32 ,  B01J4/00

摘要： A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.

公开(公告)号：US20220298672A1

公开(公告)日：2022-09-22

申请号：US17697107

申请日：2022-03-17

申请人： ASM IP Holding B.V.

发明人： Hichem M'Saad ,  Alexandros Demos ,  Xing Lin ,  Junwei Su ,  Matthew Goodman ,  Daw Gen Lim ,  Shujin Huang ,  Rutvij Naik

IPC分类号： C30B25/16 ,  H01L21/66 ,  C30B25/10 ,  C30B25/12 ,  C30B23/06 ,  C23C16/52 ,  C23C16/46 ,  C23C14/54 ,  F27B17/00 ,  H05B3/00 ,  H05B1/02 ,  G01J5/00

摘要： A method of operating a reactor system to provide wafer temperature gradient control is provided. The method includes operating a center temperature sensor, a middle temperature sensor, and an edge temperature sensor to sense a temperature of a center zone of a wafer on a susceptor in reaction chamber of the reactor system, to sense a temperature of a middle zone of the wafer, and to sense a temperature of an edge zone of the wafer. The temperatures of the center, middle, and edge zones of the wafer are processed with a controller to generate control signals based on a predefined temperature gradient for the wafer. First, second, and third sets of heater lamps are operated based on the temperature of the center, middle, and edge zones to heat the center, the middle, and the edge zone of the wafer. Reactor systems are also described.

公开(公告)号：US11296189B2

公开(公告)日：2022-04-05

申请号：US17009093

申请日：2020-09-01

申请人： ASM IP Holding B.V.

发明人： Chi-Wei Lo ,  Alexandros Demos ,  Raj Kumar

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01L29/267 ,  H01L21/02 ,  C23C16/30 ,  H01L29/167 ,  H01L29/24

摘要： A method for depositing a phosphorus doped silicon arsenide film is disclosed. The method may include, providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, exposing the substrate to a silicon precursor, an arsenic precursor, and a phosphorus dopant precursor, and depositing the phosphorus doped silicon arsenide film over a surface of the substrate. Semiconductor device structures including a phosphorus doped silicon arsenide film deposited by the methods of the disclosure are also provided.

公开(公告)号：US20210102290A1

公开(公告)日：2021-04-08

申请号：US17060764

申请日：2020-10-01

申请人： ASM IP Holding B.V.

发明人： Tomas Hernandez Acosta ,  Alexandros Demos ,  Peter Westrom ,  Caleb Miskin ,  Amir Kajbafvala ,  Ali Moballegh

IPC分类号： C23C16/455 ,  C23C16/52 ,  B01J4/00 ,  C23C16/46

摘要： A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.

公开(公告)号：US20190393308A1

公开(公告)日：2019-12-26

申请号：US16014981

申请日：2018-06-21

申请人： ASM IP Holding B.V.

发明人： Chi-Wei Lo ,  Alexandros Demos ,  Raj Kumar

IPC分类号： H01L29/08 ,  H01L29/267 ,  H01L21/02 ,  C23C16/30

摘要： A method for depositing a phosphorus doped silicon arsenide film is disclosed. The method may include, providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, exposing the substrate to a silicon precursor, an arsenic precursor, and a phosphorus dopant precursor, and depositing the phosphorus doped silicon arsenide film over a surface of the substrate. Semiconductor device structures including a phosphorus doped silicon arsenide film deposited by the methods of the disclosure are also provided.