公开(公告)号：US20210313178A1

公开(公告)日：2021-10-07

申请号：US17220745

申请日：2021-04-01

Applicant: ASM IP Holding B.V.

Inventor： Ryu Nakano

IPC: H01L21/225 ,  H01L21/02

Abstract: In a method for forming a barrier layer, the barrier layer is formed on a base layer having a three-dimensional structure before a dopant-containing layer is formed on the base layer. At this time, at least one of a film thickness, a film quality, and a film type of the barrier layer is controlled in a height direction of the three-dimensional structure by using an atomic layer deposition (ALD) process.

公开(公告)号：US09284642B2

公开(公告)日：2016-03-15

申请号：US14031982

申请日：2013-09-19

Applicant: ASM IP Holding B.V.

Inventor： Ryu Nakano ,  Naoki Inoue

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/509 ,  H01L21/02

CPC classification number: C23C16/401 ,  C23C16/405 ,  C23C16/4554 ,  C23C16/5096 ,  H01L21/02112 ,  H01L21/02164 ,  H01L21/02186 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

Abstract: A method for forming an oxide film by plasma-assisted processing includes: (i) supplying a precursor reactive to none of oxygen, CxOy, and NxOy (x and y are integers) without a plasma to a reaction space wherein a substrate is placed; (ii) exposing the precursor to a plasma of CxOy and/or NxOy in the reaction space; and (iii) forming an oxide film on the substrate using the precursor and the plasma.

Abstract translation: 通过等离子体辅助处理形成氧化膜的方法包括：（i）将没有氧的C x O y和N x O y（x和y是整数）的反应性的前体供给到其中放置基板的反应空间; （ii）将前体暴露于反应空间中的C x O y和/或N x O y的等离子体; 和（iii）使用前体和等离子体在衬底上形成氧化膜。

公开(公告)号：US11970769B2

公开(公告)日：2024-04-30

申请号：US17845150

申请日：2022-06-21

Applicant: ASM IP Holding B.V.

Inventor： Trigagema Gama ,  Ryu Nakano

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/56

CPC classification number: C23C16/402 ,  C23C16/45527 ,  C23C16/45553 ,  C23C16/4583 ,  C23C16/56

Abstract: Methods and systems for depositing a layer comprising silicon oxide on the substrate are disclosed. Exemplary methods include cyclical deposition methods that include providing a first silicon precursor to the reaction chamber, providing a second silicon precursor, and using a reactant or a non-reactant gas forming silicon oxide on a surface of the substrate. Exemplary methods can further include a treatment step.

公开(公告)号：US20230395372A1

公开(公告)日：2023-12-07

申请号：US18236654

申请日：2023-08-22

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yamada ,  Kai Matsuhisa ,  YouJin Choi ,  Hyunchul Kim ,  Eunji Bae ,  SeungRyul Lee ,  Naoki Inoue ,  Ryu Nakano ,  Mao Tsuchiya

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/04 ,  C23C16/50

CPC classification number: H01L21/0234 ,  H01L21/02274 ,  H01L21/0228 ,  H01J37/32165 ,  H01J37/3244 ,  C23C16/04 ,  C23C16/50 ,  H01J2237/332

Abstract: Methods of forming patterned structures suitable for a multiple patterning process and manipulating film properties are disclosed. Exemplary methods include forming a layer overlying the substrate, followed by treating the layer, wherein the layer is formed by providing a precursor to the reaction chamber for a precursor pulse period, providing a reactant to the reaction chamber for a reactant pulse period, applying a first plasma power having a first frequency for a first plasma power period, and optionally applying a second plasma power having a second frequency for a second plasma power period, wherein the first frequency is different than the second frequency. Exemplary methods can further include a step of treating the deposited material.

公开(公告)号：US20230017874A1

公开(公告)日：2023-01-19

申请号：US17845150

申请日：2022-06-21

Applicant: ASM IP Holding B.V.

Inventor： Trigagema Gama ,  Ryu Nakano

IPC: C23C16/40 ,  C23C16/458 ,  C23C16/455 ,  C23C16/56

Abstract: Methods and systems for depositing a layer comprising silicon oxide on the substrate are disclosed. Exemplary methods include cyclical deposition methods that include providing a first silicon precursor to the reaction chamber, providing a second silicon precursor, and using a reactant or a non-reactant gas forming silicon oxide on a surface of the substrate. Exemplary methods can further include a treatment step.

公开(公告)号：US20190259611A1

公开(公告)日：2019-08-22

申请号：US15925532

申请日：2018-03-19

Applicant: ASM IP Holding B.V.

Inventor： Akinori Nakano ,  Toshihisa Nozawa ,  Ryu Nakano

IPC: H01L21/033 ,  H01L21/027 ,  H01J37/32 ,  H01L21/3065

Abstract: Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.

公开(公告)号：US20150315704A1

公开(公告)日：2015-11-05

申请号：US14268348

申请日：2014-05-02

Applicant: ASM IP Holding B.V.

Inventor： Ryu Nakano ,  Naoki Inoue ,  Kunitoshi Namba

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/52 ,  C23C16/505

CPC classification number: C23C16/45538 ,  C23C16/40 ,  C23C16/402 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32137 ,  H01J37/32146 ,  H01L21/02164 ,  H01L21/02175 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337

Abstract: A method for forming an oxide film by plasma-assisted cyclic processing, includes: (i) supplying a precursor to a reaction space wherein a substrate is placed; (ii) applying a first RF power to the reaction space for a first period of time without supplying a precursor; and (iii) applying a second RF power to the reaction space for a second period of time without supplying the precursor, wherein the first RF power is lower than the second RF power, and/or the first period of time is shorter than the second period of time.

Abstract translation: 通过等离子体辅助循环处理形成氧化膜的方法包括：（i）向放置基板的反应空间供给前体; （ii）在不提供前体的情况下将第一RF功率施加到所述反应空间第一时间段; 和（iii）在不提供所述前体的情况下将第二RF功率施加到所述反应空间而不提供所述前体，其中所述第一RF功率低于所述第二RF功率，和/或所述第一时间段短于所述第二RF功率 一段的时间。

公开(公告)号：US20150284848A1

公开(公告)日：2015-10-08

申请号：US14246969

申请日：2014-04-07

Applicant: ASM IP Holding B.V.

Inventor： Ryu Nakano ,  Wataru Adachi

IPC: C23C16/455

CPC classification number: C23C16/45557 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45561 ,  Y10T137/0396

Abstract: A method stabilizes pressure of a reaction chamber during a process using a first gas and a second gas, wherein a gas inlet line is connected to the reaction chamber, and a second gas line and a first gas line are connected to another end of the gas inlet line. The method includes: feeding a first gas in pulses according to a waveform to the reaction chamber through the first gas line and the gas inlet line; and feeding a second gas in pulses according to a reverse waveform to the reaction chamber through the second gas line and the gas inlet line, wherein superimposed waveforms of the waveform and reverse waveform are made substantially or nearly fiat, thereby stabilizing pressure of the reaction chamber.

Abstract translation: 一种方法在使用第一气体和第二气体的过程中稳定反应室的压力，其中气体入口管线连接到反应室，并且第二气体管线和第一气体管线连接到气体的另一端 入口线。 该方法包括：通过第一气体管线和气体入口管线将根据波形脉冲的第一气体进料到反应室; 并且通过第二气体管线和气体入口管线将根据反向波形的脉冲的第二气体进料到反应室，其中波形和反向波形的叠加波形基本上或几乎均匀地进行，从而使反应室的压力稳定 。

公开(公告)号：US09123510B2

公开(公告)日：2015-09-01

申请号：US13915732

申请日：2013-06-12

Applicant: ASM IP Holding B.V.

Inventor： Ryu Nakano ,  Naoki Inoue

IPC: C23C16/509 ,  H01J37/32 ,  C23C16/455 ,  C23C16/458

CPC classification number: H01J37/32449 ,  C23C16/4551 ,  C23C16/45519 ,  C23C16/45536 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32431

Abstract: A method for controlling in-plane uniformity of a substrate processed by plasma-assisted process in a reactor, includes: supplying a principal gas to a reaction space, and discharging radially the principal gas from the reaction space through an annular duct; and supplying an secondary gas to the reaction space from an area in close proximity to an outer periphery of a susceptor, outside an outer circumference of the substrate as viewed from above, so as to flow at least partially in an inward direction passing the outer circumference of the substrate, reversing the direction of the secondary gas to flow toward the annular duct in a vicinity of the outer circumference of the substrate, and discharging radially the secondary gas together with the principal gas from the reaction space through the annular duct.

Abstract translation: 一种用于控制在反应器中通过等离子体辅助工艺处理的衬底的面内均匀性的方法，包括：向反应空间供应主要气体，并通过环形管径向从反应空间排出主要气体; 以及从基座的外周附近的区域向反应空间供给二次气体，在从上方观察的基板的外周的外侧，至少部分地沿着通过外周的内侧流动 使基板的外周附近的二次气体的方向反向流向环状管道，并且使二次气体与来自反应空间的主要气体一起径向地通过环形管排出。

公开(公告)号：US20150118846A1

公开(公告)日：2015-04-30

申请号：US14065114

申请日：2013-10-28

Applicant: ASM IP Holding B.V.

Inventor： Yoshihiro Isii ,  Ryu Nakano ,  Naoki Inoue

IPC: H01L21/027 ,  H01L21/3065

CPC classification number: H01L21/0273 ,  H01J37/32091 ,  H01J37/32146 ,  H01L21/0337 ,  H01L21/31138

Abstract: A method for trimming a carbon-containing film includes: (i) providing a substrate having a carbon-containing film formed thereon; (ii) supplying a trimming gas and a rare gas to the reaction space, which trimming gas includes an oxygen-containing gas; and (iii) applying RF power between the electrodes to generate a plasma using the trimming gas and the rare gas and to thereby trim the carbon-containing film while controlling a trimming rate at 55 nm/min or less as a function of at least one parameter selected from the group consisting of a flow rate of an oxygen-containing gas, a flow rate of nitrogen-containing gas to be added to the oxygen-containing gas, pressure in the reaction space, RF power, a duty cycle of RF power, a distance between the electrodes, and a temperature of a susceptor on which the substrate is placed.

Abstract translation: 一种修整含碳膜的方法包括：（i）提供其上形成有含碳膜的基材; （ii）向所述反应空间供给修整气体和稀有气体，所述修整气体包括含氧气体; 并且（iii）在电极之间施加RF功率以使用修整气体和稀有气体产生等离子体，并且由此修整含碳膜，同时以55nm / min以下的修整速率控制为至少一个 参数，选自含氧气体的流量，添加到含氧气体中的含氮气体的流量，反应空间中的压力，RF功率，RF功率的占空比 ，电极之间的距离以及放置基板的基座的温度。