利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

39 条记录 (耗时 0.037 秒)

    METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT
    12.
    发明申请
    METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT 有权
    用于生产光电元件和光电元件的方法

    公开(公告)号：US20120322186A1

    公开(公告)日：2012-12-20

    申请号：US13598896

    申请日：2012-08-30

    申请人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

    发明人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

    IPC分类号： H01L33/12

    CPC分类号： H01L33/382 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/22 ,  H01L33/62 ,  H01L2224/48

    摘要： In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.

    摘要翻译： 在制造光电子部件的方法中，提供具有第一热膨胀系数的生长衬底。 向其施加多层缓冲层序列。 随后沉积具有不同于第一热膨胀系数的第二热膨胀系数的层序列。 它还包括用于发射电磁辐射的有源层。 随后将载体衬底施加在外延沉积层序列上。 去除生长衬底，并且构造多层缓冲层序列以增加电磁辐射的耦合。 最后，用外延沉积层序列进行接触。

    Method for producing an optoelectronic semiconductor chip, and optoelectronic semiconductor chip
    13.
    发明授权
    Method for producing an optoelectronic semiconductor chip, and optoelectronic semiconductor chip 有权
    制造光电半导体芯片的方法和光电子半导体芯片

    公开(公告)号：US09257612B2

    公开(公告)日：2016-02-09

    申请号：US13704600

    申请日：2011-05-26

    申请人： Lutz Höppel ,  Norwin Von Malm

    发明人： Lutz Höppel ,  Norwin Von Malm

    IPC分类号： H01L21/00 ,  H01L33/46 ,  H01L33/38 ,  H01L31/0232 ,  H01L31/0224 ,  H01L31/18 ,  H01L33/00 ,  H01L33/20

    CPC分类号： H01L33/46 ,  H01L27/0248 ,  H01L29/861 ,  H01L31/0224 ,  H01L31/02327 ,  H01L31/186 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  Y02P70/521 ,  H01L2924/00

    摘要： A method for producing an optoelectronic semiconductor chip is specified, comprising the following steps: providing an n-conducting layer (2), arranging a p-conducting layer (4) on the n-conducting layer (2), arranging a metal layer sequence (5) on the p-conducting layer (4), arranging a mask (6) at that side of the metal layer sequence (5) which is remote from the p-conducting layer (4), in places removing the metal layer sequence (5) and uncovering the p-conducting layer (4) using the mask (6), and in places neutralizing or removing the uncovered regions (4a) of the p-conducting layer (4) as far as the n-conducting layer (2) using the mask (6), wherein the metal layer sequence (5) comprises at least one mirror layer (51) and a barrier layer (52), and the mirror layer (51) of the metal layer sequence (5) faces the p-conducting layer (4).

    摘要翻译： 规定了光电子半导体芯片的制造方法，包括以下步骤：在n导电层（2）上设置n导电层（2），配置p导电层（4），配置金属层序列 （5）在p导电层（4）上，在远离导电层（4）的金属层序列（5）的该侧布置掩模（6），去除金属层序列 （5），并且使用掩模（6）露出p导电层（4），并且在中和或去除p导电层（4）的未覆盖区域（4a）的地方，直到n导电层（ 2）使用掩模（6），其中金属层序列（5）包括至少一个镜层（51）和阻挡层（52），并且金属层序列（5）的镜层（51）面向 p导电层（4）。

    Radiation-emitting semiconductor chip
    14.
    发明授权
    Radiation-emitting semiconductor chip 有权
    辐射发射半导体芯片

    公开(公告)号：US09054016B2

    公开(公告)日：2015-06-09

    申请号：US13123421

    申请日：2009-10-29

    申请人： Jürgen Moosburger ,  Norwin von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

    发明人： Jürgen Moosburger ,  Norwin von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

    IPC分类号： H01L33/00 ,  H01L27/15 ,  H01L25/16 ,  H01L33/08 ,  H01L33/38

    CPC分类号： H01L27/15 ,  H01L25/167 ,  H01L33/005 ,  H01L33/02 ,  H01L33/08 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    摘要： A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.

    摘要翻译： 辐射发射半导体芯片包括具有半导体层序列的载体和半导体本体，其中在具有半导体层序列的半导体主体中形成发光区域和保护二极管区域; 所述半导体层序列包括产生辐射的有源区，所述有源区布置在第一半导体层和第二半导体层之间; 第一半导体层布置在有源区的背离载体的一侧; 发射区域具有延伸穿过有源区域的凹部; 发射区域中的第一半导体层导电地连接到第一连接层，其中第一连接层在凹部中从第一半导体层朝向载体延伸; 并且保护二极管区域中的第一连接层与第二半导体层导电连接。

    SUPPORT FOR AN OPTOELECTRONIC SEMICONDUCTOR CHIP, AND SEMICONDUCTOR CHIP
    15.
    发明申请
    SUPPORT FOR AN OPTOELECTRONIC SEMICONDUCTOR CHIP, AND SEMICONDUCTOR CHIP 有权
    支持光电半导体芯片和半导体芯片

    公开(公告)号：US20130292735A1

    公开(公告)日：2013-11-07

    申请号：US13994928

    申请日：2011-12-05

    申请人： Lutz Höppel

    发明人： Lutz Höppel

    IPC分类号： H01L33/48

    CPC分类号： H01L33/48 ,  H01L23/49827 ,  H01L25/167 ,  H01L33/483 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A support for an optoelectronic semiconductor chip includes a support body with a first main face and a second main face opposite the first main face, at least one electrical plated-through hole extending from the first main face to the second main face and formed in the support body, and an insulating layer arranged on the first main face, the insulation layer covering the electrical plated-through hole only in regions.

    摘要翻译： 光电半导体芯片的支撑体包括具有第一主面和与第一主面相对的第二主面的支撑体，至少一个从第一主面向第二主面延伸的电镀通孔，形成在 支撑体和布置在第一主面上的绝缘层，绝缘层仅在区域中覆盖电穿孔。

    OPTOELECTRONIC COMPONENT
    16.
    发明申请
    OPTOELECTRONIC COMPONENT 有权
    光电组件

    公开(公告)号：US20120098025A1

    公开(公告)日：2012-04-26

    申请号：US13379417

    申请日：2010-07-06

    申请人： Lutz Höppel

    发明人： Lutz Höppel

    IPC分类号： H01L33/62 ,  H01L33/08

    CPC分类号： H01L33/486 ,  H01L25/167 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An optoelectronic component includes a semiconductor body and a carrier substrate connected to the semiconductor body with a solder joint, wherein the carrier substrate includes first and second apertures, through which first and second electrically conductive connecting layers are guided from a first primary surface of the carrier substrate facing away from the semiconductor body to a second primary surface of the carrier substrate facing away from the semiconductor body, the carrier substrate made of a semiconductor material and having side flanks, which run obliquely to the primary surfaces at least in a first partial region, wherein the side flanks are provided with an electrically insulating layer in the first partial region.

    摘要翻译： 光电子部件包括半导体本体和与焊接接头连接到半导体本体的载体基板，其中载体基板包括第一和第二孔，第一和第二导电连接层从载体基板的第一主表面引导到载体基板 衬底背向半导体本体至背离半导体本体的载体衬底的第二主表面，载体衬底由半导体材料制成并具有至少在第一部分区域中倾斜于主表面延伸的侧面 ，其中所述侧面在所述第一部分区域中设置有电绝缘层。

    RADIATION-EMITTING SEMICONDUCTOR CHIP
    18.
    发明申请
    RADIATION-EMITTING SEMICONDUCTOR CHIP 有权
    辐射发射半导体芯片

    公开(公告)号：US20110260205A1

    公开(公告)日：2011-10-27

    申请号：US13123421

    申请日：2009-10-29

    申请人： Jürgen Moosburger ,  Norwin Von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

    发明人： Jürgen Moosburger ,  Norwin Von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

    IPC分类号： H01L33/62

    CPC分类号： H01L27/15 ,  H01L25/167 ,  H01L33/005 ,  H01L33/02 ,  H01L33/08 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    摘要： A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.

    摘要翻译： 辐射发射半导体芯片包括具有半导体层序列的载体和半导体本体，其中在具有半导体层序列的半导体主体中形成发光区域和保护二极管区域; 所述半导体层序列包括产生辐射的有源区，所述有源区布置在第一半导体层和第二半导体层之间; 第一半导体层布置在有源区的背离载体的一侧; 发射区域具有延伸穿过有源区域的凹部; 发射区域中的第一半导体层导电地连接到第一连接层，其中第一连接层在凹部中从第一半导体层朝向载体延伸; 并且保护二极管区域中的第一连接层与第二半导体层导电连接。

    Lighting apparatus
    19.
    发明授权
    Lighting apparatus 有权
    照明设备

    公开(公告)号：US09179507B2

    公开(公告)日：2015-11-03

    申请号：US13821551

    申请日：2011-07-25

    申请人： Siegfried Herrmann ,  Norwin Von Malm ,  Lutz Höppel

    发明人： Siegfried Herrmann ,  Norwin Von Malm ,  Lutz Höppel

    IPC分类号： H05B37/00 ,  H05B33/08 ,  H01L41/04 ,  H01L41/107 ,  F21L13/06

    CPC分类号： H05B33/08 ,  F21L13/06 ,  H01L41/044 ,  H01L41/107 ,  H05B33/0809

    摘要： What is specified is: a lighting apparatus, with a piezoelectric transformer (1), which has a mounting face (10), on which at least two output-side connection points (11) are arranged, and at least one substrateless light-emitting diode (2), which is designed to generate electromagnetic radiation, wherein the at least one substrateless light-emitting diode (2) is fitted at least indirectly to the mounting face (10) and fastened mechanically to the mounting face (10), and the at least one substrateless light-emitting diode (2) is electrically conductively connected to at least two of the output-side connection points (11).

    摘要翻译： 具体实施方式是：具有压电变压器（1）的照明装置，其具有安装面（10），至少两个输出侧连接点（11）配置在所述安装面上，以及至少一个无基板发光 被设计成产生电磁辐射的二极管（2），其中所述至少一个无基板发光二极管（2）至少间接地装配到所述安装面（10）并机械地紧固到所述安装面（10），以及 所述至少一个无衬底发光二极管（2）与所述输出侧连接点（11）中的至少两个导电地连接。