公开(公告)号：US10058975B2

公开(公告)日：2018-08-28

申请号：US15410512

申请日：2017-01-19

Applicant: Applied Materials, Inc.

Inventor： Brian J. Brown

IPC: B24B37/015 ,  B24B49/14 ,  B24B55/02 ,  B24B37/34 ,  B24C1/00

CPC classification number: B24B37/015 ,  B24B37/107 ,  B24B37/34 ,  B24B49/14 ,  B24B53/017 ,  B24B55/02 ,  B24C1/003

Abstract: Implementations of the present disclosure generally relate to planarization of surfaces on substrates and on layers formed on substrates, including an apparatus for in-situ temperature control during polishing, and methods of using the same. More specifically, implementations of the present disclosure relate to in-situ temperature control with a condensed gas during a chemical-mechanical polishing (CMP) process. In one implementation, the method comprises polishing one or more substrates against a polishing surface in the presence of a polishing fluid during a polishing process to remove a portion of a material formed on the one or more substrates. A temperature of the polishing surface is monitored during the polishing process. Carbon dioxide snow is delivered to the polishing surface in response to the monitored temperature to maintain the temperature of the polishing surface at a target value during the polishing process.

公开(公告)号：US20160175857A1

公开(公告)日：2016-06-23

申请号：US14626903

申请日：2015-02-19

Applicant: Applied Materials, Inc.

Inventor： Jonathan S. Frankel ,  Brian J. Brown ,  Vincent S. Francischetti ,  Paul McHugh ,  Kyle M. Hanson ,  Ekaterina Mikhaylichenko

IPC: B05B1/04

CPC classification number: H01L21/67051 ,  B05B1/046 ,  H01L21/02052 ,  H01L21/67057

Abstract: An example waterfall apparatus includes (1) a first portion of a first width having (a) a first plenum, a second plenum, and a restricted fluid path therebetween; (b) a first coupling surface; and (c) an inlet opening that creates a fluid path between the first coupling surface and the first plenum; and (2) a second portion of a second width larger than the first width and having (a) a second coupling surface; and (b) an inlet aligned with the first portion inlet opening. The first and second coupling surfaces form a slot that extends along at least a portion of a length of the waterfall apparatus and that connects to the second plenum. Fluid introduced into the second portion inlet fills the first plenum, travels through the restricted fluid path to the second plenum, and exits the slot between the first and second portions to form a rinsing fluid waterfall.

Abstract translation: 示例性瀑布装置包括（1）第一宽度的第一部分，其具有（a）第一增压室，第二增压室和它们之间的限制流体路径; （b）第一耦合表面; 和（c）入口开口，其在所述第一联接表面和所述第一增压室之间产生流体路径; 和（2）第二宽度大于第一宽度的第二部分，并且具有（a）第二联接表面; 和（b）与第一部分入口开口对准的入口。 第一和第二联接表面形成沿着瀑布装置的长度的至少一部分延伸并连接到第二增压室的槽。 引入第二部分入口的流体填充第一集气室，穿过受限制的流体路径到达第二集气室，并且离开第一和第二部分之间的槽，以形成冲洗流体瀑布。

公开(公告)号：US12138733B2

公开(公告)日：2024-11-12

申请号：US17684285

申请日：2022-03-01

Applicant: Applied Materials, Inc.

Inventor： Ekaterina A. Mikhaylichenko ,  Fred C. Redeker ,  Brian J. Brown ,  Chirantha Rodrigo ,  Steven M. Zuniga ,  Jay Gurusamy

IPC: B24B37/04 ,  B24B37/11

Abstract: A polishing apparatus includes a support configured to receive and hold a substrate in a plane, a polishing pad affixed to a cylindrical surface of a rotary drum, a first actuator to rotate the drum about a first axis parallel to the plane, a second actuator to bring the polishing pad on the rotary drum into contact with the substrate, and a port for dispensing a polishing liquid to an interface between the polishing pad and the substrate.

公开(公告)号：US12051599B2

公开(公告)日：2024-07-30

申请号：US18198174

申请日：2023-05-16

Applicant: Applied Materials, Inc.

Inventor： Brian J. Brown ,  Ekaterina A. Mikhaylichenko ,  Brian K. Kirkpatrick

IPC: H01L21/02 ,  B08B1/12 ,  B08B1/32 ,  B08B3/02 ,  B08B3/04 ,  B08B3/08 ,  B08B3/12 ,  B08B3/14 ,  B08B7/04 ,  B08B13/00 ,  B65G47/90 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67057 ,  B08B1/12 ,  B08B1/32 ,  B08B3/02 ,  B08B3/022 ,  B08B3/041 ,  B08B3/08 ,  B08B3/12 ,  B08B3/14 ,  B08B7/04 ,  B08B13/00 ,  B65G47/90 ,  H01L21/67051 ,  H01L21/68707 ,  B08B2203/007 ,  H01L21/02074

Abstract: A method for removing particulates from a plurality of substrates includes opening a first access port in a top of a first container holding a cleaning fluid bath, inserting a first substrate through the first access port to a first support, closing the first access port, opening a second access port in the top of the first container, inserting a second substrate through the second access port to a second support, closing the second access port, opening the first access port, removing the first substrate through the first access port and delivering the first substrate into a rinsing station, closing the first access port, opening the second access port, removing the second substrate through the second access port and delivering the second substrate into the rinsing station, and closing the second access port.

公开(公告)号：US11951589B2

公开(公告)日：2024-04-09

申请号：US16953139

申请日：2020-11-19

Applicant: Applied Materials, Inc.

Inventor： Jimin Zhang ,  Jianshe Tang ,  Brian J. Brown ,  Wei Lu ,  Priscilla Diep

IPC: B24B37/26 ,  B24B37/005 ,  B24B37/04 ,  B24B37/27

CPC classification number: B24B37/26 ,  B24B37/005 ,  B24B37/042 ,  B24B37/27

Abstract: A chemical mechanical polishing system includes a platen to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, and a controller. The polishing pad has a polishing control groove. The carrier is laterally movable by a first actuator across the polishing pad and rotatable by a second actuator. The controller synchronizes lateral oscillation of the carrier head with rotation of the carrier head such that over a plurality of successive oscillations of the carrier head such that when a first angular swath of an edge portion of the substrate is at an azimuthal angular position about an axis of rotation of the carrier head the first angular swath overlies the polishing surface and when a second angular swath of the edge portion of the substrate is at the azimuthal angular position the second angular swath overlies the polishing control groove.

公开(公告)号：US20240109163A1

公开(公告)日：2024-04-04

申请号：US18537574

申请日：2023-12-12

Applicant: Applied Materials, Inc.

Inventor： Haosheng Wu ,  Shou-Sung Chang ,  Chih Chung Chou ,  Jianshe Tang ,  Hui Chen ,  Hari Soundararajan ,  Brian J. Brown

IPC: B24B37/015 ,  B24B57/02 ,  H01L21/321 ,  H01L21/67

CPC classification number: B24B37/015 ,  B24B57/02 ,  H01L21/3212 ,  H01L21/67248

Abstract: A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a conduit having an inlet to be coupled to a gas source, and a dispenser coupled to the conduit and having a convergent-divergent nozzle suspended over the platen to direct gas from the gas source onto the polishing surface of the polishing pad.

公开(公告)号：US11931853B2

公开(公告)日：2024-03-19

申请号：US17681677

申请日：2022-02-25

Applicant: Applied Materials, Inc.

Inventor： Eric Lau ,  Charles C. Garretson ,  Huanbo Zhang ,  Zhize Zhu ,  Benjamin Cherian ,  Brian J. Brown ,  Thomas H. Osterheld

IPC: B24B37/005 ,  B24B49/00 ,  B24B49/12 ,  B24B49/16 ,  G05B13/04

CPC classification number: B24B37/005 ,  B24B49/006 ,  B24B49/12 ,  B24B49/16 ,  G05B13/041 ,  G05B13/047

Abstract: Generating a recipe for controlling a polishing system includes receiving a target removal profile that includes a target thickness to remove for a plurality of locations on a substrate that are angularly distributed around the substrate, and storing a first function defining a polishing rate for a zone from a plurality of pressurizable zones of a carrier head that are angularly distributed around a the carrier head. The first function defines polishing rates as a function of pressures. For each particular zone of the plurality of zones a recipe defining a pressure for the particular zone over time is calculated by calculating an expected thickness profile after polishing using the first function, and minimizing a cost function that incorporates a first term representing a difference between the expected thickness profile and a target thickness profile.

公开(公告)号：US20240066660A1

公开(公告)日：2024-02-29

申请号：US18505913

申请日：2023-11-09

Applicant: Applied Materials, Inc.

Inventor： Haosheng Wu ,  Hari Soundararajan ,  Jianshe Tang ,  Shou-Sung Chang ,  Brian J. Brown ,  Yen-Chu Yang ,  You Wang ,  Rajeev Bajaj

IPC: B24B37/015 ,  B24B37/10 ,  B24B55/03

CPC classification number: B24B37/015 ,  B24B37/105 ,  B24B55/03 ,  H01L21/30625

Abstract: A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a source of coolant, a dispenser having one or more apertures suspended over the platen to direct coolant from the source of coolant onto the polishing surface of the polishing pad; and a controller coupled to the source of coolant and configured to cause the source of coolant to deliver the coolant through the nozzles onto the polishing surface during a selected step of a polishing operation.

公开(公告)号：US20240025006A1

公开(公告)日：2024-01-25

申请号：US18478723

申请日：2023-09-29

Applicant: Applied Materials, Inc.

Inventor： Haosheng Wu ,  Jianshe Tang ,  Brian J. Brown ,  Shih-Haur Shen ,  Shou-Sung Chang ,  Hari Soundararajan

IPC: B24B37/015 ,  B24B57/02

CPC classification number: B24B37/015 ,  B24B57/02

Abstract: A chemical mechanical polishing system includes a polishing a port to dispense polishing liquid onto a polishing pad and a liquid flow controller to control a flow rate of the polishing liquid to the port, a temperature control system to control a temperature of the polishing pad, and a control system. The control system is configured to obtain a baseline removal rate, a baseline temperature and a baseline polishing liquid flow rate. A function is stored relating removal rate to polishing liquid flow rate and temperature. The function is used to determine a reduced polishing liquid flow rate and an adjusted temperature such that a resulting removal rate is not below the baseline removal rate. The liquid flow controller is controlled to dispense the polishing liquid at the reduced polishing liquid flow rate and control the temperature control system so that the polishing process reaches the adjusted temperature.

公开(公告)号：US11826872B2

公开(公告)日：2023-11-28

申请号：US17357802

申请日：2021-06-24

Applicant: Applied Materials, Inc.

Inventor： Haosheng Wu ,  Jianshe Tang ,  Brian J. Brown ,  Shih-Haur Shen ,  Shou-Sung Chang ,  Hari Soundararajan

IPC: B24B37/015 ,  B24B57/02

CPC classification number: B24B37/015 ,  B24B57/02

Abstract: A chemical mechanical polishing system includes a polishing a port to dispense polishing liquid onto a polishing pad and a liquid flow controller to control a flow rate of the polishing liquid to the port, a temperature control system to control a temperature of the polishing pad, and a control system. The control system is configured to obtain a baseline removal rate, a baseline temperature and a baseline polishing liquid flow rate. A function is stored relating removal rate to polishing liquid flow rate and temperature. The function is used to determine a reduced polishing liquid flow rate and an adjusted temperature such that a resulting removal rate is not below the baseline removal rate. The liquid flow controller is controlled to dispense the polishing liquid at the reduced polishing liquid flow rate and control the temperature control system so that the polishing process reaches the adjusted temperature.