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11.发明申请EXTREME ULTRAVIOLET LITHOGRAPHY SYSTEM HAVING CHUCK ASSEMBLY AND METHOD OF MANUFACTURING THEREOF 审中-公开具有葫芦组件的超级超视距平移系统及其制造方法公开(公告)号：US20160342096A1
公开(公告)日：2016-11-24
申请号：US15031677
申请日：2014-12-19
Applicant: APPLIED MATERIALS, INC.
Inventor： Majeed A. Foad
IPC: G03F7/20 , G03F1/22 , H01L21/683
Abstract: An EUV lithography system and method of manufacturing thereof includes: an EUV light source; a chuck being thermally conducting and smooth having a surface with a predetermined chuck flatness; and a reflective lens system for directing EUV light from the EUV light source over the surface of the chuck.
Abstract translation: EUV光刻系统及其制造方法包括：EUV光源; 卡盘是导热和平滑的，具有具有预定卡盘平坦度的表面; 以及用于将来自EUV光源的EUV光引导到卡盘表面上的反射透镜系统。
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12.发明申请公开(公告)号：US20160011499A1
公开(公告)日：2016-01-14
申请号：US14620114
申请日：2015-02-11
Applicant: Applied Materials, Inc.
Inventor： Vinayak Vishwanath Hassan , Majeed A. Foad , Cara Beasley , Ralf Hofmann
CPC classification number: G03F1/24 , C23C14/042 , C23C16/042 , C23C28/00 , C23C28/322 , C23C28/34 , C23C28/42 , C23C28/44 , G03F1/22 , G03F1/54 , G03F7/70033
Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80nm and less than 2% reflectivity.
Abstract translation: 极紫外（EUV）掩模坯生产系统包括：用于产生真空的基板处理真空室; 在真空中用于输送负载在基板处理真空室中的超低膨胀基板的基板处理平台; 以及用于形成EUV掩模坯料的基板处理平台所接近的多个子室包括：形成在超低膨胀基板上方的用于反射极紫外（EUV）光的多层堆叠，以及吸收层 形成在多层叠层上方，用于吸收波长13.5nm的EUV光，包括吸收层的厚度小于80nm且小于2％的反射率。
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公开(公告)号：US09915621B2
公开(公告)日：2018-03-13
申请号：US15031690
申请日：2014-12-18
Applicant: Applied Materials, Inc.
Inventor： Majeed A. Foad , Christopher Dennis Bencher , Christopher G. Talbot , John Christopher Moran
IPC: G01N21/95 , G01N21/956
CPC classification number: G01N21/95 , G01N21/956 , G01N2021/95676 , G01N2201/061
Abstract: An extreme ultraviolet (EUV) substrate inspection system and method of manufacturing thereof, includes: an EUV source directing EUV illumination through an aperture; a light detector detecting mask illumination with reduced off axis rays reflected off from a substrate; and a computing device processing image data detected by the light detector.
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公开(公告)号：US09595436B2
公开(公告)日：2017-03-14
申请号：US14425578
申请日：2013-10-24
Applicant: Applied Materials, Inc.
Inventor： Cara Beasley , Ralf Hofmann , Majeed A. Foad
CPC classification number: H01L21/02376 , B05D3/061 , B05D3/065 , B05D3/141 , B05D5/12 , C01B32/182 , C01B32/184 , C01B32/186 , C01B32/20 , H01L21/02318 , H01L21/0234 , H01L21/02345 , H01L21/0237 , H01L21/02527 , H01L21/02628 , H01L21/02664 , H01L21/288
Abstract: Embodiments described herein provide methods and apparatus for forming graphitic carbon such as graphene on a substrate. The method includes providing a precursor comprising a linear conjugated hydrocarbon, depositing a hydrocarbon layer from the precursor on the substrate, and forming graphene from the hydrocarbon layer by applying energy to the substrate. The precursor may include template molecules such as polynuclear aromatics, and may be deposited on the substrate by spinning on, by spraying, by flowing, by dipping, or by condensing. The energy may be applied as radiant energy, thermal energy, or plasma energy.
Abstract translation: 本文所述的实施方案提供了在基底上形成石墨碳如石墨烯的方法和装置。 该方法包括提供包含线性共轭烃的前体，在基底上沉积来自前体的烃层，以及通过向基底施加能量从烃层形成石墨烯。 前体可以包括模板分子，例如多核芳族化合物，并且可以通过旋转，喷雾，通过浸渍，或通过冷凝沉积在基材上。 能量可以作为辐射能，热能或等离子体能量施加。
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公开(公告)号：US20160181134A1
公开(公告)日：2016-06-23
申请号：US14839656
申请日：2015-08-28
Applicant: Applied Materials, Inc.
Inventor： Edward W. Budiarto , Majeed A. Foad , Ralf Hofmann , Thomas Nowak , Todd Egan , Mehdi Vaez-Iravani
IPC: H01L21/67 , H01L21/02 , H01L21/285 , H01L21/66 , H01L21/033
CPC classification number: H01L21/67253 , G03F1/22 , G03F1/24 , H01L21/02631 , H01L21/0332 , H01L21/0337 , H01L21/2855 , H01L22/12 , H01L22/26
Abstract: A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.
Abstract translation: 一种监测和沉积控制系统及其操作方法，包括：沉积室，用于在基板上沉积材料层; 传感器阵列，用于监测材料层的沉积，用于在沉积期间材料层的层厚度的变化; 以及用于基于沉积期间的层厚度的变化来调整沉积参数的处理单元。
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Patent Agency Ranking
公开(公告)号：US09263078B2
公开(公告)日：2016-02-16
申请号：US14029248
申请日：2013-09-17
Applicant: Applied Materials, Inc.
Inventor： Steven Verhaverbeke , Omkaram Nalamasu , Majeed A. Foad , Mahalingam Venkatesan , Nety M. Krishna
CPC classification number: G11B5/84 , C23C14/185 , C23C14/48 , C23C14/5826 , C23C14/5833 , G11B5/855 , H01J2237/3365
Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.
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公开(公告)号：US11493841B2
公开(公告)日：2022-11-08
申请号：US16720251
申请日：2019-12-19
Applicant: Applied Materials, Inc.
Inventor： Ralf Hofmann , Majeed A. Foad , Cara Beasley
Abstract: An extreme ultraviolet mask and method of manufacture thereof includes: providing a glass-ceramic block; forming a glass-ceramic substrate from the glass-ceramic block; and depositing a planarization layer on the glass-ceramic substrate.
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公开(公告)号：US20190057849A1
公开(公告)日：2019-02-21
申请号：US15681022
申请日：2017-08-18
Applicant: Applied Materials, Inc.
Inventor： Vibhu Jindal , Sanjay Bhat , Majeed A. Foad
Abstract: Physical vapor deposition processing chambers and methods of processing a substrate such as an EUV mask blank in a physical vapor deposition chamber are disclosed. An electric field and a magnetic field are utilized to deflect particles from a substrate being processed in the chamber.
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19.发明申请公开(公告)号：US20170160632A1
公开(公告)日：2017-06-08
申请号：US15438248
申请日：2017-02-21
Applicant: Applied Materials, Inc.
Inventor： Vinayak Vishwanath Hassan , Majeed A. Foad , Cara Beasley , Ralf Hofmann
CPC classification number: G03F1/24 , C23C14/042 , C23C16/042 , C23C28/00 , C23C28/322 , C23C28/34 , C23C28/42 , C23C28/44 , G03F1/22 , G03F1/54 , G03F7/70033
Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.
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20.发明申请公开(公告)号：US20170131637A1
公开(公告)日：2017-05-11
申请号：US15410048
申请日：2017-01-19
Applicant: Applied Materials, Inc.
Inventor： Ralf Hofmann , Vinayak Vishwanath Hassan , Cara Beasley , Majeed A. Foad
CPC classification number: G03F7/702 , C23C14/0605 , C23C14/0635 , C23C14/14 , C23C16/44 , G02B1/14 , G02B5/085 , G02B5/0891 , G03F1/24 , G03F1/48 , G03F1/52 , G03F7/70033 , G03F7/70316 , G03F7/70916 , G03F7/70958 , G21K1/062 , H01J37/32798 , H01J37/3429
Abstract: An apparatus and method of manufacture of an extreme ultraviolet reflective element includes: a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer formed from niobium or niobium carbide for forming a Bragg reflector; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.
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