公开(公告)号：US20160254139A1

公开(公告)日：2016-09-01

申请号：US15152676

申请日：2016-05-12

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Yasuo SUGISHIMA ,  Atsushi MIZUTANI

IPC: H01L21/02 ,  B08B3/08 ,  B08B7/00 ,  C11D7/26 ,  B08B3/04 ,  B08B3/10 ,  C11D11/00 ,  C11D7/32 ,  H01L21/3105 ,  B08B9/00

CPC classification number: H01L21/02057 ,  B08B3/041 ,  B08B3/08 ,  B08B3/10 ,  B08B7/0035 ,  B08B9/00 ,  C11D3/0073 ,  C11D3/3719 ,  C11D3/3723 ,  C11D3/3773 ,  C11D3/3776 ,  C11D7/261 ,  C11D7/265 ,  C11D7/267 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D11/0047 ,  G03F7/425 ,  H01L21/31058 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/823814 ,  H01L21/823857

Abstract: Provided is a semiconductor substrate treatment liquid which removes an organic material on the top of a semiconductor substrate from the semiconductor substrate having a Ge-containing layer that includes germanium (Ge) or cleans the surface thereof, and the treatment liquid includes a liquid chemical component which adjusts the pH of the treatment liquid to be in a range of 5 to 16 and an anticorrosive component which is used to prevent the Ge-containing layer.

Abstract translation: 提供一种半导体衬底处理液，其从具有包含锗（Ge）的Ge含量层的半导体衬底或其表面清除半导体衬底的顶部上的有机材料，并且处理液体包括液体化学组分 其将处理液的pH调节至5〜16的范围，以及用于防止含Ge层的防腐蚀成分。

公开(公告)号：US20150243527A1

公开(公告)日：2015-08-27

申请号：US14711070

申请日：2015-05-13

Applicant: FUJIFILM CORPORATION

Inventor： Naotsugu MURO ,  Tetsuya KAMIMURA ,  Tadashi INABA ,  Atsushi MIZUTANI

IPC: H01L21/3213 ,  C09K13/08

CPC classification number: H01L21/32134 ,  C09K13/08 ,  H01L21/31144

Abstract: An etching method containing, at the time of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal, selecting a substrate in which a surface oxygen content of the first layer is from 0.1 to 10% by mole, and applying an etching liquid containing a hydrofluoric acid compound and an oxidizing agent to the substrate and thereby removing the first layer.

Abstract translation: 一种蚀刻方法，其特征在于，在具有含有氮化钛（TiN）的第一层和含有过渡金属的第二层的基板的处理时，选择其中第一层的表面氧含量为0.1〜10％ 并将含有氢氟酸化合物和氧化剂的蚀刻液施加到基材上，从而除去第一层。

公开(公告)号：US20130244443A1

公开(公告)日：2013-09-19

申请号：US13770282

申请日：2013-02-19

Applicant: FUJIFILM CORPORATION

Inventor： Atsushi MIZUTANI ,  Tetsuya KAMIMURA ,  Akiko YOSHII ,  Tetsuya SHIMIZU

IPC: C09K13/08 ,  H01L21/306

CPC classification number: C09K13/08 ,  H01L21/28158 ,  H01L21/30604 ,  H01L21/31111

Abstract: A method for manufacturing a semiconductor substrate product having: providing an etching liquid containing water, a hydrofluoric acid compound and an organic solvent, and applying the etching liquid to a semiconductor substrate, the semiconductor substrate having a silicon layer and a silicon oxide layer, the silicon layer containing an impurity, and thereby selectively etching the silicon oxide layer.

Abstract translation: 一种制造半导体衬底产品的方法，其具有：提供含有水，氢氟酸化合物和有机溶剂的蚀刻液，并将蚀刻液施加到半导体衬底，所述半导体衬底具有硅层和氧化硅层， 含有杂质的硅层，从而选择性地蚀刻氧化硅层。

公开(公告)号：US20240425754A1

公开(公告)日：2024-12-26

申请号：US18808281

申请日：2024-08-19

Applicant: FUJIFILM Corporation

Inventor： Yuta SHIGENOI ,  Atsushi MIZUTANI ,  Tomonori TAKAHASHI

IPC: C09K13/02 ,  H01L21/3213

Abstract: An object of the present invention is to provide a composition for manufacturing a semiconductor, which is capable of selectively removing silicon in a case of being applied to an object to be treated containing silicon-germanium and silicon; a method for treating an object to be treated using the composition for manufacturing a semiconductor; and a method for manufacturing a semiconductor element using the composition for manufacturing a semiconductor.
The composition for manufacturing a semiconductor according to the present invention is a composition which includes a specific compound having two or more sulfur atoms and one or more heteroatoms other than a sulfur atom, an organic solvent, and water, and is alkaline.

公开(公告)号：US20220119960A1

公开(公告)日：2022-04-21

申请号：US17565419

申请日：2021-12-29

Applicant: FUJIFILM Corporation

Inventor： Atsushi MIZUTANI ,  Tetsuya KAMIMURA

IPC: C23F1/16

Abstract: An object of the present invention is to provide a composition that exhibits excellent dissolving ability and etching selectivity (particularly, etching selectivity for a Ru-containing substance and other metal-containing substances) to metal-containing substances (particularly, a Ru-containing substance), a kit for preparing the composition, and a method for treating a substrate by using the composition.
The composition according to an embodiment of the present invention is a composition for removing metal-containing substances, and contains one or more periodic acid compounds selected from the group consisting of a periodic acid and a salt thereof, an azole compound, and an alkali compound.

公开(公告)号：US20170309492A1

公开(公告)日：2017-10-26

申请号：US15647351

申请日：2017-07-12

Applicant: FUJIFILM Corporation

Inventor： Satomi TAKAHASHI ,  Seongmu BAK ,  Atsushi MIZUTANI ,  Tadashi INABA

IPC: H01L21/304 ,  C22B58/00 ,  C22B30/04 ,  C07C321/26 ,  C07C321/22 ,  H01L21/308 ,  C07C321/04

CPC classification number: H01L21/304 ,  C07C321/04 ,  C07C321/22 ,  C07C321/26 ,  C07C323/12 ,  C07C323/52 ,  C07C323/58 ,  C07D213/70 ,  C07D239/40 ,  C07D249/12 ,  C22B30/04 ,  C22B58/00 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/3081 ,  H01L21/31111 ,  Y02P20/582

Abstract: Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a Group III-V element or a treatment liquid for treating an oxide of a Group III-V element, each liquid including an acid and a mercapto compound; and a method using each of the same liquids. Further provided are a treatment liquid for treating a semiconductor substrate, including an acid and a mercapto compound, and a method for producing a semiconductor substrate product using the same.

公开(公告)号：US20170222138A1

公开(公告)日：2017-08-03

申请号：US15488523

申请日：2017-04-17

Applicant: FUJIFILM CORPORATION

Inventor： Keeyoung PARK ,  Atsushi MIZUTANI

IPC: H01L43/12 ,  C23F1/30 ,  H01L43/08

CPC classification number: H01L43/12 ,  C23F1/30 ,  C23F1/40 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/308 ,  H01L27/105 ,  H01L43/08

Abstract: An object is to provide a ruthenium removal composition capable of dissolving Ru while suppressing dissolution of CoFeB, and a method of producing a magnetoresistive random access memory (MRAM) using the same. A ruthenium removal composition of the present invention contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the ruthenium removal composition is 0.01% to 5% by mass with respect to the total mass of the composition.

公开(公告)号：US20160252819A1

公开(公告)日：2016-09-01

申请号：US15152725

申请日：2016-05-12

Applicant: FUJIFILM Corporation

Inventor： Yasuo SUGISHIMA ,  Tetsuya KAMIMURA ,  Atsushi MIZUTANI

IPC: G03F7/42 ,  H01L21/266 ,  H01L21/285 ,  H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L29/161 ,  H01L29/165 ,  H01L21/8238 ,  H01L21/324

CPC classification number: G03F7/425 ,  G03F7/426 ,  H01L21/266 ,  H01L21/28518 ,  H01L21/31111 ,  H01L21/324 ,  H01L21/823814 ,  H01L21/823857 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/7848

Abstract: Provided is a stripper which removes a modified resist on a semiconductor substrate and contains an alcohol compound, a quaternary ammonium hydroxide compound, and 4% by mass or greater of water.

Abstract translation: 提供一种汽提器，其移除半导体衬底上的改性抗蚀剂并含有醇化合物，氢氧化季铵化合物和4质量％以上的水。

公开(公告)号：US20160118264A1

公开(公告)日：2016-04-28

申请号：US14927700

申请日：2014-05-01

Applicant: FUJIFILM CORPORATION

Inventor： Tetsuya KAMIMURA ,  Akiko KOYAMA ,  Satomi TAKAHASHI ,  Atsushi MIZUTANI ,  Yasuo SUGISHIMA

IPC: H01L21/306 ,  H01L21/324 ,  H01L21/02

Abstract: There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one specific metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method including: bringing an etching solution which contains an alkali compound into contact with the second layer and selectively removing the second layer.

Abstract translation: 提供了一种半导体衬底的蚀刻方法，其包括含有锗（Ge）的第一层和包含选自镍铂（NiPt），钛（Ti），镍（Ni））和至少一种特定金属元素的第二层 钴（Co），该方法包括：使包含碱性化合物的蚀刻溶液与第二层接触并选择性地除去第二层。

公开(公告)号：US20150252311A1

公开(公告)日：2015-09-10

申请号：US14717437

申请日：2015-05-20

Applicant: FUJIFILM Corporation

Inventor： Tomonori TAKAHASHI ,  Kazutaka TAKAHASHI ,  Atsushi MIZUTANI ,  Hiroyuki SEKI ,  Hideo FUSHIMI ,  Tomoo KATO

IPC: C11D11/00 ,  H01L21/02 ,  C11D7/26 ,  H01L21/3213 ,  C11D7/34 ,  C11D7/32

CPC classification number: G03F7/425 ,  C09K13/00 ,  C09K13/06 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/34 ,  C11D7/5013 ,  C11D11/0047 ,  G03F7/422 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/31133 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/32138 ,  H01L21/32139

Abstract: A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.

Abstract translation: 提供了用于去除形成在半导体衬底上的等离子体蚀刻残渣和/或灰化残留物的清洁组合物，其包括（组分a）水，（组分b）羟胺和/或其盐，（组分c）碱性有机化合物， 和（组分d）有机酸，并且具有7至9的pH。还提供了一种清洁方法和使用该清洁组合物的半导体器件的制造方法。