公开(公告)号：US20170309582A1

公开(公告)日：2017-10-26

申请号：US15496477

申请日：2017-04-25

Applicant: Infineon Technologies AG

Inventor： Thorsten Meyer ,  Walter Hartner ,  Maciej Wojnowski

IPC: H01L23/66 ,  H01L23/00 ,  H01L23/522 ,  H01L23/31 ,  H01Q1/22 ,  H01L29/06

CPC classification number: H01L23/66 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/5226 ,  H01L23/5227 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L29/0657 ,  H01L2223/6677 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73267 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2924/10158 ,  H01L2924/15311 ,  H01L2924/18162 ,  H01Q1/2283 ,  H01L2924/00014

Abstract: A semiconductor device includes a semiconductor die having an active main surface and an opposite main surface opposite the active main surface. The semiconductor device further includes an antenna arranged on the active main surface of the semiconductor die and a recess arranged on the opposite main surface of the semiconductor die. The recess is arranged over the antenna.

公开(公告)号：US20170271260A1

公开(公告)日：2017-09-21

申请号：US15459270

申请日：2017-03-15

Applicant: Infineon Technologies AG

Inventor： Maciej Wojnowski ,  Frank Daeche ,  Zeeshan Umar

IPC: H01L23/522 ,  H02M3/158 ,  H01L23/552

CPC classification number: H01L23/5227 ,  H01F17/00 ,  H01F17/0013 ,  H01F2017/0066 ,  H01L23/49822 ,  H01L23/5226 ,  H01L23/5389 ,  H01L23/552 ,  H01L2224/04105 ,  H01L2224/16225 ,  H01L2224/18 ,  H01L2924/181 ,  H02M3/158 ,  H01L2924/00012

Abstract: A device includes a semiconductor chip, a plurality of planar metallization layers arranged over a main surface of the semiconductor chip, and a passive component including windings, wherein each of the windings is formed in one of the plurality of planar metallization layers.

公开(公告)号：US20170213800A1

公开(公告)日：2017-07-27

申请号：US15480751

申请日：2017-04-06

Applicant: Infineon Technologies AG

Inventor： Ernst Seler ,  Maciej Wojnowski ,  Walter Hartner ,  Josef Boeck

IPC: H01L23/66 ,  H01Q13/08 ,  H01L23/538 ,  H01L23/31 ,  H01L21/56 ,  H01L21/48

CPC classification number: H01L23/66 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/19 ,  H01L24/96 ,  H01L2223/6616 ,  H01L2223/6627 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2924/12042 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01Q13/08 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device package includes placing a semiconductor chip on a carrier, covering the semiconductor chip with an encapsulation material to form an encapsulation body, providing a microwave component having at least one electrically conducting wall structure integrated in the encapsulation body, and forming an electrical interconnect configured to electrically couple the semiconductor chip and the microwave component.

公开(公告)号：US09577852B2

公开(公告)日：2017-02-21

申请号：US14531343

申请日：2014-11-03

Applicant: Infineon Technologies AG

Inventor： Maciej Wojnowski ,  Alexander Glas ,  Hubert Werthmann ,  Josef-Paul Schaffer ,  Francesca Arcioni ,  Gabriele Bettineschi

IPC: H04L25/08 ,  H04L25/02 ,  H02H9/04

CPC classification number: H04L25/085 ,  H02H9/046 ,  H04L25/0276

Abstract: A common-mode suppressor for eliminating common-mode noise in high frequency differential data transmission systems and an associated method includes a long coiled differential transmission line configured to transfer data between a source and a load. The differential transmission line comprises a first conductive wire and a second conductive wire which are inductively and capacitively coupled and are laterally aligned or vertically aligned with each other. Further, the differential transmission line is matched for differential signals and un-matched for common-mode noise.

Abstract translation: 用于消除高频差分数据传输系统中的共模噪声的共模抑制器及相关方法包括：构造成在源和负载之间传送数据的长线圈差动传输线。 差分传输线包括电感和电容耦合并且彼此横向对准或垂直对准的第一导线和第二导线。 此外，差分传输线被匹配用于差分信号，并且对于共模噪声是不匹配的。

公开(公告)号：US20160247780A1

公开(公告)日：2016-08-25

申请号：US15146090

申请日：2016-05-04

Applicant: Infineon Technologies AG

Inventor： Ernst Seler ,  Maciej Wojnowski ,  Walter Hartner ,  Josef Boeck

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/66

CPC classification number: H01L23/66 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/19 ,  H01L24/96 ,  H01L2223/6616 ,  H01L2223/6627 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2924/12042 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01Q13/08 ,  H01L2924/00

Abstract: A method of manufacturing an array of semiconductor device packages includes placing a plurality of semiconductor chips on a temporary carrier, covering the plurality of semiconductor chips with an encapsulation material to form an encapsulation body, providing a plurality of microwave components each including at least one electrically conducting wall structure integrated in the encapsulation body, forming a plurality of electrical interconnects each configured to electrically couple a semiconductor chip and a microwave component, and separating the encapsulation body into single semiconductor device packages each including a semiconductor chip, a microwave component and an electrical interconnect.

Abstract translation: 制造半导体器件封装阵列的方法包括将多个半导体芯片放置在临时载体上，用封装材料覆盖多个半导体芯片以形成封装体，提供多个微波元件，每个微波元件包括至少一个电 导电壁结构集成在封装体中，形成多个电互连，每个电互连配置成电耦合半导体芯片和微波部件，并将封装体分离成单个半导体器件封装，每个半导体器件封装包括半导体芯片，微波部件和电 互连。

公开(公告)号：US20140320231A1

公开(公告)日：2014-10-30

申请号：US13872718

申请日：2013-04-29

Applicant: Infineon Technologies AG

Inventor： Ernst Seler ,  Maciej Wojnowski ,  Walter Hartner

IPC: H01P5/107 ,  H01L21/56

CPC classification number: H01P5/08 ,  H01L21/56 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/66 ,  H01L24/19 ,  H01L24/25 ,  H01L2223/6633 ,  H01L2223/6677 ,  H01L2224/12105 ,  H01L2224/13 ,  H01L2224/21 ,  H01L2224/221 ,  H01L2224/24195 ,  H01L2224/2518 ,  H01L2924/1421 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/181 ,  H01P1/16 ,  H01P3/121 ,  H01P5/107 ,  H01L2924/00

Abstract: An integrated-circuit module includes a package molding compound layer, a radio-frequency (RF) integrated circuit embedded within the package molding compound layer and having an RF port, a waveguide transition structure embedded within the package molding compound layer, and a redistribution layer. The waveguide transition structure includes a transmission line interface section, a waveguide interface section configured for coupling to a rectangular waveguide housing, and a transformer section configured to provide a mode transition between the transmission line interface section and the waveguide interface section. The redistribution layer includes at least one insulating layer and at least one metallization layer, extending between the RF integrated circuit and the waveguide transition structure across a surface of the package molding compound layer. The first redistribution layer includes an RF transmission line conductively connected between the RF port of the RF integrated circuit and the transmission line interface section of the waveguide transition structure.

Abstract translation: 集成电路模块包括封装模塑复合层，嵌入在封装模塑复合层内的射频（RF）集成电路，并具有RF端口，嵌入封装模塑复合层内的波导过渡结构以及再分配层 。 波导过渡结构包括传输线接口部分，被配置为耦合到矩形波导壳体的波导接口部分和被配置为在传输线接口部分和波导接口部分之间提供模式转换的变压器部分。 再分配层包括至少一个绝缘层和至少一个金属化层，其跨过封装模塑复合层的表面在RF集成电路和波导过渡结构之间延伸。 第一再分配层包括导电连接在RF集成电路的RF端口和波导过渡结构的传输线接口部分之间的RF传输线。

公开(公告)号：US20140110840A1

公开(公告)日：2014-04-24

申请号：US13736553

申请日：2013-01-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Maciej Wojnowski ,  Walter Hartner ,  Ottmar Geitner ,  Gottfried Beer ,  Klaus Pressel ,  Mehran Pour Mousavi

IPC: H01L23/498 ,  H01L21/768

CPC classification number: H01L23/49816 ,  H01L21/568 ,  H01L21/76802 ,  H01L21/76885 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L2223/6677 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/17519 ,  H01L2224/211 ,  H01L2224/215 ,  H01L2224/82101 ,  H01L2224/96 ,  H01L2924/0002 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/181 ,  H01Q1/2283 ,  H01Q9/0407 ,  H01Q9/16 ,  H01Q23/00 ,  H01L2224/19 ,  H01L2924/014 ,  H01L2924/01022 ,  H01L2924/01074 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01029 ,  H01L2924/01055 ,  H01L2924/01064 ,  H01L2924/01044 ,  H01L2924/01042 ,  H01L2924/01015 ,  H01L2924/0105 ,  H01L2924/00012 ,  H01L2924/00

Abstract: In one embodiment of the present invention, a semiconductor package includes a substrate having a first major surface and an opposite second major surface. A chip is disposed in the substrate. The chip includes a plurality of contact pads at the first major surface. A first antenna structure is disposed at the first major surface. A reflector is disposed at the second major surface.

Abstract translation: 在本发明的一个实施例中，半导体封装包括具有第一主表面和相对的第二主表面的衬底。 芯片设置在基板中。 芯片包括在第一主表面处的多个接触垫。 第一天线结构设置在第一主表面处。 反射器设置在第二主表面处。

公开(公告)号：US20130017653A1

公开(公告)日：2013-01-17

申请号：US13622058

申请日：2012-09-18

Applicant: Infineon Technologies AG

Inventor： Rudolf Lachner ,  Linus Maurer ,  Maciej Wojnowski

IPC: H01L21/60 ,  H01L21/56

CPC classification number: H01L23/66 ,  H01L23/3128 ,  H01L23/3135 ,  H01L24/12 ,  H01L24/19 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6677 ,  H01L2223/6683 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2924/01005 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01Q1/2283 ,  H01Q9/0407 ,  H01Q9/045 ,  H01Q9/0457 ,  H01L2924/00

Abstract: A semiconductor module comprises components in one wafer level package. The module comprises an integrated circuit (IC) chip embedded within a package molding compound. The package comprises a molding compound package layer coupled to an interface layer for integrating an antenna structure and a bonding interconnect structure to the IC chip. The bonding interconnect structure comprises three dimensional interconnects. The antenna structure and bonding interconnect structure are coupled to the IC chip and integrated within the interface layer in the same wafer fabrication process.

Abstract translation: 半导体模块包括一个晶片级封装中的部件。 该模块包括嵌入在封装模塑料中的集成电路（IC）芯片。 该封装包括耦合到界面层的成型复合封装层，用于将天线结构和接合互连结构集成到IC芯片。 接合互连结构包括三维互连。 天线结构和接合互连结构在相同的晶片制造过程中耦合到IC芯片并且集成在界面层内。

公开(公告)号：US12094842B2

公开(公告)日：2024-09-17

申请号：US16360387

申请日：2019-03-21

Applicant: Infineon Technologies AG

Inventor： Thorsten Meyer ,  Walter Hartner ,  Maciej Wojnowski

IPC: H01L23/522 ,  H01L23/00 ,  H01L23/31 ,  H01L23/66 ,  H01L29/06 ,  H01Q1/22

CPC classification number: H01L23/66 ,  H01L23/3114 ,  H01L23/5226 ,  H01L23/5227 ,  H01L24/19 ,  H01L24/20 ,  H01L29/0657 ,  H01Q1/2283 ,  H01L23/3128 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L2223/6677 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73267 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2924/10158 ,  H01L2924/15311 ,  H01L2924/18162 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2224/81203 ,  H01L2924/00014 ,  H01L2224/8385 ,  H01L2924/00014 ,  H01L2224/8384 ,  H01L2924/00014 ,  H01L2224/83825 ,  H01L2924/00014 ,  H01L2224/83102 ,  H01L2924/00014

Abstract: A semiconductor device includes a semiconductor die having an active main surface and an opposite main surface opposite the active main surface. The semiconductor device further includes an antenna arranged on the active main surface of the semiconductor die and a recess arranged on the opposite main surface of the semiconductor die. The recess is arranged over the antenna.

公开(公告)号：US12014998B2

公开(公告)日：2024-06-18

申请号：US18312800

申请日：2023-05-05

Applicant: Infineon Technologies AG

Inventor： Ernst Seler ,  Markus Josef Lang ,  Maciej Wojnowski

IPC: H01L23/66 ,  G01S13/08 ,  G01S13/931 ,  H01L23/00 ,  H01L23/498 ,  H01Q1/22

CPC classification number: H01L23/66 ,  G01S13/08 ,  H01L23/49816 ,  H01L24/16 ,  H01Q1/2283 ,  G01S13/931 ,  H01L2223/6622 ,  H01L2223/6633 ,  H01L2223/6677 ,  H01L2224/16225

Abstract: A semiconductor device comprises a substrate having a first surface and a second surface opposite the first surface, at least one connection element arranged on the first surface of the substrate to electrically and mechanically connect the substrate to a printed circuit board, and a radar semiconductor chip arranged on the first surface of the substrate.