公开(公告)号：US20150364332A1

公开(公告)日：2015-12-17

申请号：US14833718

申请日：2015-08-24

Applicant: JSR CORPORATION

Inventor： Hisashi Nakagawa ,  Tatsuya Sakai ,  Shunsuke Kurita ,  Satoshi Dei ,  Kazunori Takanashi ,  Yoshio Takimoto ,  Masayuki Motonari

IPC: H01L21/308 ,  C07F7/28 ,  C07F9/00 ,  G03F7/11 ,  C07F5/06 ,  G03F7/20 ,  G03F7/32 ,  C07F5/00 ,  C07F11/00

CPC classification number: H01L21/3081 ,  C07F5/00 ,  C07F5/003 ,  C07F5/06 ,  C07F7/28 ,  C07F9/00 ,  C07F11/00 ,  C07F13/00 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/09 ,  G03F7/094 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/325 ,  G03F7/36 ,  H01L21/0332

Abstract: An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a β-diketone, a β-keto ester, a β-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), R1 represents an organic group having a valency of n. X represents —OH, —COOH, —NCO or —NHRa, wherein Ra represents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4. R1X)n  (1)

Abstract translation: 一种用于多层抗蚀剂工艺的无机成膜组合物，其包括：金属原子; 至少一个桥连配体; 和除了至少一个桥连配体之外并且衍生自羟基酸酯，二 - 二酮，β-酮酯，二羧酸酯或其组合的配体。 至少一个桥连配体包括衍生自由式（1）表示的化合物的第一桥连配体。 相对于总共的桥连配体，第一桥连配体的量不小于50mol％。 在式（1）中，R 1表示具有n价的有机基团。 X表示-OH，-COOH，-NCO或-NHRa，其中Ra表示氢原子或一价有机基团。 n为2〜4的整数。R1（X）n（1）

公开(公告)号：US20190243247A1

公开(公告)日：2019-08-08

申请号：US16388238

申请日：2019-04-18

Applicant: JSR CORPORATION

Inventor： Naoya NOSAKA ,  Goji Wakamatsu ,  Tsubasa Abe ,  Yuushi Matsumura ,  Yoshio Takimoto ,  Shin-ya Nakafuji ,  Kazunori Sakai

IPC: G03F7/11 ,  C08G61/02 ,  C09D165/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  C07C35/37 ,  C07C33/28 ,  C07C35/44 ,  C07C43/166 ,  H01L21/027 ,  H01L21/308

CPC classification number: G03F7/11 ,  C07C33/28 ,  C07C35/37 ,  C07C35/44 ,  C07C43/166 ,  C07C2602/42 ,  C07C2603/20 ,  C07C2603/50 ,  C07C2603/54 ,  C08F299/02 ,  C08G61/02 ,  C08G2261/1414 ,  C08G2261/1422 ,  C08G2261/1424 ,  C08G2261/148 ,  C09D165/00 ,  G03F7/162 ,  G03F7/168 ,  G03F7/20 ,  G03F7/26 ,  H01L21/027 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081

Abstract: A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. R1 represents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; L1 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group; R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3.

公开(公告)号：US10234762B2

公开(公告)日：2019-03-19

申请号：US15267840

申请日：2016-09-16

Applicant: JSR CORPORATION

Inventor： Masayoshi Ishikawa ,  Hiromitsu Tanaka ,  Tomoharu Kawazu ,  Junya Suzuki ,  Tomoaki Seko ,  Yoshio Takimoto

IPC: G03F7/36 ,  G03F7/09 ,  H01L21/311 ,  G03F7/075 ,  G03F7/42 ,  G03F7/16 ,  G03F7/40 ,  H01L21/027

Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing the silicon-containing film with a basic aqueous solution. The pattern-forming method does not include, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound. The silicon-containing film is preferably formed a hydrolytic condensation product of a composition containing a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds. X represents a halogen atom or —OR2, and R2 represents a monovalent organic group. SiX4  (1)

公开(公告)号：US10078265B2

公开(公告)日：2018-09-18

申请号：US15267923

申请日：2016-09-16

Applicant: JSR CORPORATION

Inventor： Shun Aoki ,  Hiromitsu Tanaka ,  Goji Wakamatsu ,  Yoshio Takimoto ,  Masayoshi Ishikawa ,  Toru Kimura

IPC: G03F7/11 ,  G03F7/09 ,  G03F7/38 ,  G03F7/075 ,  G03F7/32 ,  C07C279/08 ,  H01L21/308 ,  H01L21/027 ,  H01L21/02 ,  C07C217/18 ,  H01L21/306 ,  C08L61/06 ,  C08G8/04 ,  G03F7/26 ,  C08G8/20 ,  C08G8/36 ,  C09D161/14 ,  C09D183/04 ,  G03F7/40

CPC classification number: G03F7/11 ,  C07C217/18 ,  C07C279/08 ,  C08G8/04 ,  C08G8/20 ,  C08G8/36 ,  C08L61/06 ,  C09D161/14 ,  C09D183/04 ,  G03F7/075 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/26 ,  G03F7/322 ,  G03F7/38 ,  G03F7/40 ,  G03F7/405 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02057 ,  H01L21/0274 ,  H01L21/30604 ,  H01L21/3081 ,  Y02P20/582

Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution. Preferably, the pattern-forming method further comprises, after the forming of the silicon-containing film and before the removing of the resist underlayer film and the silicon-containing film, forming a resist pattern on an upper face side of the silicon-containing film, and etching the silicon-containing film using the resist pattern as a mask.

公开(公告)号：US20180211828A1

公开(公告)日：2018-07-26

申请号：US15934258

申请日：2018-03-23

Applicant: JSR CORPORATION

Inventor： Kang-go CHUNG ,  Yuushi Matsumura ,  Yoshio Takimoto

IPC: H01L21/02 ,  C08L67/02 ,  C08L67/04

CPC classification number: H01L21/02052 ,  C08L67/02 ,  C08L67/04 ,  C08L2203/16 ,  C11D3/2065 ,  C11D3/2093 ,  C11D3/37 ,  C11D3/43 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/31127

Abstract: A composition for forming a film for use in cleaning a semiconductor substrate includes a solvent and a compound having a molecular weight of no s less than 300 and comprising a polar group, a group represented by a formula (i) or a combination thereof. In the formula (i), R1 represents a group that is dissociated by heat or an action of an acid. The polar group is preferably a hydroxy group, a carboxy group, an amide group, an amino group, a sulfonyl group, a sulfo group or a combination thereof. The compound is preferably a polymer having a weight average molecular weight of no less than 300 and no greater than 50,000. The polymer is preferably a ring polymer having a weight average molecular weight of no less than 300 and no greater than 3,000. —O—R1   (i)

公开(公告)号：US20170003595A1

公开(公告)日：2017-01-05

申请号：US15267923

申请日：2016-09-16

Applicant: JSR CORPORATION

Inventor： Shun AOKI ,  Hiromitsu Tanaka ,  Goji Wakamaytsu ,  Yoshio Takimoto ,  Masayoshi Ishikawa ,  Toru Kimura

IPC: G03F7/11 ,  G03F7/40 ,  C09D161/14

CPC classification number: G03F7/11 ,  C07C217/18 ,  C07C279/08 ,  C08G8/04 ,  C08G8/20 ,  C08G8/36 ,  C08L61/06 ,  C09D161/14 ,  C09D183/04 ,  G03F7/075 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/26 ,  G03F7/322 ,  G03F7/38 ,  G03F7/40 ,  G03F7/405 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02057 ,  H01L21/0274 ,  H01L21/30604 ,  H01L21/3081 ,  Y02P20/582

Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution. Preferably, the pattern-forming method further comprises, after the forming of the silicon-containing film and before the removing of the resist underlayer film and the silicon-containing film, forming a resist pattern on an upper face side of the silicon-containing film, and etching the silicon-containing film using the resist pattern as a mask.

Abstract translation: 图案形成方法包括：在基板的上表面侧上形成抗蚀剂下层膜; 在抗蚀剂下层膜的上表面侧形成含硅膜; 并用碱性水溶液除去至少一部分抗蚀剂下层膜和至少一部分含硅膜。 优选地，图案形成方法还包括在形成含硅膜之后并且在除去抗蚀剂下层膜和含硅膜之前，在含硅膜的上表面侧上形成抗蚀剂图案 并使用抗蚀剂图案作为掩模蚀刻含硅膜。

公开(公告)号：US11003079B2

公开(公告)日：2021-05-11

申请号：US16205502

申请日：2018-11-30

Applicant: JSR CORPORATION

Inventor： Naoya Nosaka ,  Gouji Wakamatsu ,  Tsubasa Abe ,  Yuushi Matsumura ,  Masayuki Miyake ,  Yoshio Takimoto

IPC: G03F7/00 ,  G03F7/11 ,  G03F7/26 ,  G03F7/09 ,  C08F34/02 ,  C09D161/12 ,  C08G8/20 ,  C07D311/74 ,  C07D311/92 ,  C07D405/14 ,  C08G61/10 ,  C09D165/00 ,  H01L21/027 ,  C08J5/18

Abstract: The composition for film formation includes a compound including a group of the formula (1) and a solvent. In the formula (1), R1 to R4 each independently represent a hydrogen atom, a monovalent organic group having 1 to 20 carbon atoms, or R1 to R4 taken together represent a cyclic structure having 3 to 20 ring atoms together with the carbon atom or a carbon chain to which R1 to R4 bond. Ar1 represents a group obtained by removing (n+3) hydrogen atoms from an aromatic ring of an arene having 6 to 20 carbon atoms. n is an integer of 0 to 9. R5 represents a hydroxy group, a halogen atom, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms.

公开(公告)号：US10090163B2

公开(公告)日：2018-10-02

申请号：US14833718

申请日：2015-08-24

Applicant: JSR CORPORATION

Inventor： Hisashi Nakagawa ,  Tatsuya Sakai ,  Shunsuke Kurita ,  Satoshi Dei ,  Kazunori Takanashi ,  Yoshio Takimoto ,  Masayuki Motonari

IPC: H01L21/308 ,  H01L21/033 ,  G03F7/11 ,  G03F7/09 ,  G03F7/36 ,  G03F7/32 ,  G03F7/20 ,  G03F7/038 ,  G03F7/039 ,  C07F13/00 ,  C07F11/00 ,  C07F9/00 ,  C07F7/28 ,  C07F5/06 ,  C07F5/00

Abstract: An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a β-diketone, a β-keto ester, a β-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), R1 represents an organic group having a valency of n. X represents —OH, —COOH, —NCO or —NHRa, wherein Ra represents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4. R1X)n  (1)

公开(公告)号：US10036954B2

公开(公告)日：2018-07-31

申请号：US15267923

申请日：2016-09-16

Applicant: JSR CORPORATION

Inventor： Shun Aoki ,  Hiromitsu Tanaka ,  Goji Wakamatsu ,  Yoshio Takimoto ,  Masayoshi Ishikawa ,  Toru Kimura

IPC: G03F7/11 ,  G03F7/09 ,  G03F7/38 ,  G03F7/075 ,  G03F7/32 ,  C07C279/08 ,  H01L21/308 ,  H01L21/027 ,  H01L21/02 ,  C07C217/18 ,  H01L21/306 ,  C08L61/06 ,  C08G8/04 ,  G03F7/26 ,  C08G8/20 ,  C08G8/36 ,  C09D161/14 ,  C09D183/04 ,  G03F7/40

Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution. Preferably, the pattern-forming method further comprises, after the forming of the silicon-containing film and before the removing of the resist underlayer film and the silicon-containing film, forming a resist pattern on an upper face side of the silicon-containing film, and etching the silicon-containing film using the resist pattern as a mask.

公开(公告)号：US09891526B2

公开(公告)日：2018-02-13

申请号：US15000966

申请日：2016-01-19

Applicant: JSR CORPORATION

Inventor： Shunsuke Kurita ,  Toru Kimura ,  Yoshio Takimoto ,  Kazunori Takanashi

IPC: G03F7/32 ,  G03F7/20 ,  G03F7/075 ,  G03F7/004 ,  H01L21/311 ,  C09K13/00 ,  H01L21/3065

CPC classification number: G03F7/32 ,  C09K13/00 ,  G03F7/0043 ,  G03F7/0757 ,  G03F7/20 ,  H01L21/3065 ,  H01L21/31122

Abstract: A pattern-forming method includes applying an inorganic film-forming composition on an upper face side of a substrate to provide an inorganic film, forming a resist pattern on an upper face side of the inorganic film; and dry-etching once or several times using the resist pattern as a mask such that the substrate has a pattern The inorganic film-forming composition includes a polyacid or a salt thereof, and an organic solvent. The step for forming a resist pattern may include the steps of: applying a resist composition on an upper face side of the inorganic film to provide a resist film; exposing the resist film; and developing the resist film exposed.