公开(公告)号：US20180108514A1

公开(公告)日：2018-04-19

申请号：US15605308

申请日：2017-05-25

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  Yinying Xiao-Li ,  Xuefeng Liu ,  John Fielden

IPC: H01J37/317 ,  H01J37/20 ,  H01J37/244 ,  H01J37/10 ,  H01J37/147 ,  H01J37/04 ,  H01J37/073

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/073 ,  H01J37/10 ,  H01J37/147 ,  H01J37/20 ,  H01J37/244 ,  H01J2237/0435

Abstract: A multi-column electron beam device includes an electron source comprising multiple field emitters fabricated on a surface of a silicon substrate. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitters. The field emitters can take various shapes including a pyramid, a cone, or a rounded whisker. Optional gate layers may be placed on the output surface near the field emitters. The field emitter may be p-type or n-type doped. Circuits may be incorporated into the wafer to control the emission current. A light source may be configured to illuminate the electron source and control the emission current. The multi-column electron beam device may be a multi-column electron beam lithography system configured to write a pattern on a sample.

公开(公告)号：US09935421B2

公开(公告)日：2018-04-03

申请号：US15344383

申请日：2016-11-04

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  J. Joseph Armstrong ,  Yujun Deng ,  Justin Dianhuan Liou ,  Vladimir Dribinski ,  John Fielden

IPC: H01S3/10 ,  H01S3/30 ,  G02B17/08 ,  H01S3/00 ,  G01N21/95 ,  H01S3/067 ,  H01S3/23 ,  H01S3/16 ,  H01S3/11 ,  G02F1/35 ,  G02F1/39

CPC classification number: H01S3/302 ,  G01N21/9501 ,  G02B17/0892 ,  G02F1/353 ,  G02F1/395 ,  G02F2001/354 ,  H01S3/005 ,  H01S3/0092 ,  H01S3/067 ,  H01S3/06754 ,  H01S3/10053 ,  H01S3/11 ,  H01S3/16 ,  H01S3/1643 ,  H01S3/1666 ,  H01S3/23 ,  H01S3/2308

Abstract: An improved solid-state laser for generating sub-200 nm light is described. This laser uses a fundamental wavelength between about 1030 nm and 1065 nm to generate the sub-200 nm light. The final frequency conversion stage of the laser creates the sub-200 nm light by mixing a wavelength of approximately 1109 nm with a wavelength of approximately 234 nm. By proper selection of non-linear media, such mixing can be achieved by nearly non-critical phase matching. This mixing results in high conversion efficiency, good stability, and high reliability.

公开(公告)号：US20170356854A1

公开(公告)日：2017-12-14

申请号：US15671703

申请日：2017-08-08

Applicant: KLA-Tencor Corporation

Inventor： Yujun Deng ,  Yung-Ho Chuang ,  John Fielden

IPC: G01N21/95 ,  G01N21/88 ,  G02F1/39 ,  H01S3/094 ,  G02F1/35 ,  H01S3/00

CPC classification number: G01N21/9501 ,  G01N21/8806 ,  G02F1/3534 ,  G02F1/39 ,  H01S3/0078 ,  H01S3/0092 ,  H01S3/094015

Abstract: A DUV laser includes an optical bandwidth filtering device, such as etalon, which is disposed outside of the laser oscillator cavity of the fundamental laser, and which directs one range of wavelengths into one portion of a frequency conversion chain and another range of wavelengths into another portion of the frequency conversion train, thereby reducing the bandwidth of the DUV laser output while maintaining high conversion efficiency in the frequency conversion chain.

公开(公告)号：US20170323716A1

公开(公告)日：2017-11-09

申请号：US15659981

申请日：2017-07-26

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  J. Joseph Armstrong ,  Yujun Deng ,  Vladimir Dribinski ,  John Fielden ,  Jidong Zhang

IPC: H01F17/00 ,  H01F27/29 ,  H01F17/04

CPC classification number: H01F17/0006 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  G02B21/10 ,  G02B21/16 ,  G02B21/361 ,  G02F1/353 ,  G02F2001/3507 ,  G02F2001/354 ,  H01F17/04 ,  H01F27/292 ,  H01S3/0092 ,  H01S3/10007 ,  H01S3/10084 ,  H01S3/1083 ,  H01S3/109 ,  H01S5/0071 ,  H01S5/0085 ,  H01S5/0604 ,  H01S5/4012

Abstract: A laser assembly for generating laser output light at an output wavelength of approximately 183 nm includes a fundamental laser, an optical parametric system (OPS), a fifth harmonic generator, and a frequency mixing module. The fundamental laser generates fundamental light at a fundamental frequency. The OPS generates a down-converted signal at a down-converted frequency. The fifth harmonic generator generates a fifth harmonic of the fundamental light. The frequency mixing module mixes the down-converted signal and the fifth harmonic to produce the laser output light at a frequency equal to a sum of the fifth harmonic frequency and the down-converted frequency. The OPS generates the down-converted signal by generating a down-converted seed signal at the down-converted frequency, and then mixing the down-converted seed signal with a portion of the fundamental light. At least one of the frequency mixing, frequency conversion or harmonic generation utilizes an annealed, deuterium-treated or hydrogen-treated CLBO crystal.

公开(公告)号：US20170278694A1

公开(公告)日：2017-09-28

申请号：US15285333

申请日：2016-10-04

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Xiaoxu Lu ,  Justin Liou ,  John Fielden

IPC: H01J61/02 ,  H01J61/20 ,  H05H1/24 ,  H01J61/16

CPC classification number: H01J61/025 ,  H01J61/125 ,  H01J61/16 ,  H01J61/20 ,  H01J61/54 ,  H01J65/04 ,  H05H1/24

Abstract: A high brightness laser-sustained broadband light source includes a gas containment structure and a pump laser configured to generate a pump beam including illumination of a wavelength at least proximate to a weak absorption line of a neutral gas contained in the gas containment structure. The broadband light source includes one or more anamorphic illumination optics configured to focus the pump beam into an approximately elliptical beam waist positioned in or proximate to the center of the gas containment structure. The broadband light source includes one or more first collection optics configured to collect broadband radiation emitted by the plasma in a direction substantially aligned with a longer axis of the elliptical beam waist.

公开(公告)号：US09748729B2

公开(公告)日：2017-08-29

申请号：US14872890

申请日：2015-10-01

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  J. Joseph Armstrong ,  Yujun Deng ,  Vladimir Dribinski ,  John Fielden ,  Jidong Zhang

IPC: G02F1/39 ,  H01S3/109 ,  G02B21/10 ,  G02B21/16 ,  G02B21/36 ,  H01S3/10 ,  H01S3/108 ,  H01S5/00 ,  H01S5/06 ,  H01S5/40 ,  G01N21/95 ,  G01N21/956

CPC classification number: H01F17/0006 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  G02B21/10 ,  G02B21/16 ,  G02B21/361 ,  G02F1/353 ,  G02F2001/3507 ,  G02F2001/354 ,  H01F17/04 ,  H01F27/292 ,  H01S3/0092 ,  H01S3/10007 ,  H01S3/10084 ,  H01S3/1083 ,  H01S3/109 ,  H01S5/0071 ,  H01S5/0085 ,  H01S5/0604 ,  H01S5/4012

Abstract: A laser assembly for generating laser output light at an output wavelength of approximately 183 nm includes a fundamental laser, an optical parametric system (OPS), a fifth harmonic generator, and a frequency mixing module. The fundamental laser generates fundamental light at a fundamental frequency. The OPS generates a down-converted signal at a down-converted frequency. The fifth harmonic generator generates a fifth harmonic of the fundamental light. The frequency mixing module mixes the down-converted signal and the fifth harmonic to produce the laser output light at a frequency equal to a sum of the fifth harmonic frequency and the down-converted frequency. The OPS generates the down-converted signal by generating a down-converted seed signal at the down-converted frequency, and then mixing the down-converted seed signal with a portion of the fundamental light. At least one of the frequency mixing, frequency conversion or harmonic generation utilizes an annealed, deuterium-treated or hydrogen-treated CLBO crystal.

公开(公告)号：US20170229829A1

公开(公告)日：2017-08-10

申请号：US15495162

申请日：2017-04-24

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  J. Joseph Armstrong ,  Vladimir Dribinski ,  John Fielden

IPC: H01S3/00 ,  G02F1/37 ,  G02F1/39 ,  G01N21/956 ,  H01S3/23 ,  G02F1/355 ,  G01N21/88 ,  G02F1/35 ,  H01S3/16

Abstract: Laser and inspection systems that generate laser output light at sub-200 nm wavelengths using fundamental light at approximately 1064 nm. A second harmonic generator module generates second harmonic light directed to both an optical parametric (OP) module, which generates down-converted signal (idler light), and to a fifth harmonic generator module, which generates fifth harmonic light. The OP module includes an optical parametric oscillator that is configured to generate the idler signal at approximately 0.5 times the fundamental frequency. The idler light and fifth harmonic light are then mixed by a frequency mixing module to generate the laser output light having an output frequency equal to approximately 5.5 times the fundamental frequency.

公开(公告)号：US09620547B2

公开(公告)日：2017-04-11

申请号：US15201028

申请日：2016-07-01

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  John Fielden

IPC: H01L27/146 ,  G01N21/95 ,  G01N21/88 ,  H01L27/148 ,  H01L31/107 ,  H01L31/028 ,  H01L31/18

CPC classification number: H01L27/14632 ,  G01N21/8806 ,  G01N21/9501 ,  G01N2201/061 ,  G01N2201/0638 ,  G01N2201/12 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14681 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14698 ,  H01L27/14825 ,  H01L27/14831 ,  H01L27/14856 ,  H01L31/028 ,  H01L31/107 ,  H01L31/1804

Abstract: A high sensitivity image sensor comprises an epitaxial layer of silicon that is intrinsic or lightly p doped (such as a doping level less than about 1013 cm−3). CMOS or CCD circuits are fabricated on the front-side of the epitaxial layer. Epitaxial p and n type layers are grown on the backside of the epitaxial layer. A pure boron layer is deposited on the n-type epitaxial layer. Some boron is driven a few nm into the n-type epitaxial layer from the backside during the boron deposition process. An anti-reflection coating may be applied to the pure boron layer. During operation of the sensor a negative bias voltage of several tens to a few hundred volts is applied to the boron layer to accelerate photo-electrons away from the backside surface and create additional electrons by an avalanche effect. Grounded p-wells protect active circuits as needed from the reversed biased epitaxial layer.

公开(公告)号：US09601299B2

公开(公告)日：2017-03-21

申请号：US13947975

申请日：2013-07-22

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  John Fielden

IPC: H01J5/16 ,  H01J29/38 ,  H01J1/34 ,  H01J31/26 ,  H01J31/50 ,  G02B21/12 ,  G01N21/95 ,  H01L27/146 ,  H01L27/148

CPC classification number: H01J29/385 ,  G01N21/9501 ,  G02B21/125 ,  H01J1/34 ,  H01J31/26 ,  H01J31/50 ,  H01L27/14643 ,  H01L27/148 ,  H01L27/14806 ,  H01L27/14893

Abstract: A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects, and a low work-function material layer is then formed over the boron layer to enhance the emission of photoelectrons. The low work-function material includes an alkali metal (e.g., cesium) or an alkali metal oxide. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel sensors and inspection systems.

公开(公告)号：US20160290932A1

公开(公告)日：2016-10-06

申请号：US15182200

申请日：2016-06-14

Applicant: KLA-Tencor Corporation

Inventor： Jehn-Huar Chern ,  Ali R. Ehsani ,  Gildardo Delgado ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden

IPC: G01N21/88 ,  H01L27/146

CPC classification number: H01L31/0216 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14806

Abstract: An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

Abstract translation: 一种检查系统，包括用于将来自照明源的光引导到样品的光学系统（光学器件），以及将从样品反射/散射的光引导到一个或多个图像传感器。 系统的至少一个图像传感器形成在包括具有相对表面的外延层的半导体膜上，形成在外延层的一个表面上的电路元件和在外延层的另一个表面上的纯硼层。 图像传感器可以使用CCD（电荷耦合器件）或CMOS（互补金属氧化物半导体）技术来制造。 图像传感器可以是二维区域传感器或一维阵列传感器。 图像传感器可以包括在电子轰击的图像传感器和/或检查系统中。