公开(公告)号：US11955521B1

公开(公告)日：2024-04-09

申请号：US17078389

申请日：2020-10-23

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01L29/205 ,  H01L21/02 ,  H01L21/311 ,  H01L21/683 ,  H01L21/8252 ,  H01L27/06 ,  H01L27/088 ,  H01L27/12 ,  H01L27/15 ,  H01L29/66 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/02 ,  H01S5/227 ,  H01S5/343 ,  H01L21/8258 ,  H01L27/085 ,  H01L29/10 ,  H01L29/20 ,  H01L29/423 ,  H01L29/43 ,  H01L29/778 ,  H01L29/861 ,  H01L29/872

CPC classification number: H01L29/205 ,  H01L21/02458 ,  H01L21/311 ,  H01L21/6835 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/0676 ,  H01L27/088 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/15 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/66318 ,  H01L29/66462 ,  H01L29/66916 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0093 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0203 ,  H01S5/0217 ,  H01S5/227 ,  H01S5/34333 ,  H01L21/8258 ,  H01L27/085 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/432 ,  H01L29/7786 ,  H01L29/8613 ,  H01L29/872 ,  H01L2224/95 ,  H01L2924/1203 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13064 ,  H01L2924/13091

Abstract: A method for manufacturing a display panel comprising light emitting device including micro LEDs includes providing multiple donor wafers having a surface region and forming an epitaxial material overlying the surface region. The epitaxial material includes an n-type region, an active region comprising at least one light emitting layer overlying the n-type region, and a p-type region overlying the active layer region. The multiple donor wafers are configured to emit different color emissions. The epitaxial material on the multiple donor wafers is patterned to form a plurality of dice, characterized by a first pitch between a pair of dice less than a design width. At least some of the dice are selectively transferred from the multiple donor wafers to a common carrier wafer such that the carrier wafer is configured with different color emitting LEDs. The different color LEDs could comprise red-green-blue LEDs to form a RGB display panel.

公开(公告)号：US11387629B1

公开(公告)日：2022-07-12

申请号：US16903188

申请日：2020-06-16

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Paul Rudy ,  Po Shan Hsu ,  Alexander Sztein

IPC: H01S5/343 ,  H01S5/323 ,  H01S5/22 ,  H01S5/02 ,  H01S5/042 ,  H01S5/0234 ,  H01S5/20 ,  H01S5/30

Abstract: An intermediate ultraviolet laser diode device includes a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material; a p-type gallium and nitrogen containing material; a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material; and an interface region overlying the first transparent conductive oxide material.

公开(公告)号：US20210226421A1

公开(公告)日：2021-07-22

申请号：US17143912

申请日：2021-01-07

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01S5/343 ,  H01S5/22 ,  H01S5/02 ,  H01S5/20 ,  H01S5/32

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

公开(公告)号：US20250070536A1

公开(公告)日：2025-02-27

申请号：US18827332

申请日：2024-09-06

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01S5/343 ,  H01S5/00 ,  H01S5/02 ,  H01S5/02325 ,  H01S5/02345 ,  H01S5/20 ,  H01S5/22 ,  H01S5/32 ,  H01S5/40

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

公开(公告)号：US12088065B2

公开(公告)日：2024-09-10

申请号：US18095891

申请日：2023-01-11

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01S5/343 ,  H01S5/00 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/32 ,  H01S5/02325 ,  H01S5/02345 ,  H01S5/40

CPC classification number: H01S5/34333 ,  H01S5/0087 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/32025 ,  H01S5/3211 ,  H01L2224/18 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01L2924/3512 ,  H01S5/005 ,  H01S5/02325 ,  H01S5/02345 ,  H01S5/2009 ,  H01S5/320225 ,  H01S5/3214 ,  H01S5/4043 ,  H01S5/4093 ,  H01S2301/173 ,  H01S2301/176 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/48465 ,  H01L2224/48091 ,  H01L2924/00

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

公开(公告)号：US11742631B1

公开(公告)日：2023-08-29

申请号：US17476776

申请日：2021-09-16

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Hua Huang ,  Phillip Skahan ,  Sang-Ho Oh ,  Ben Yonkee ,  Alexander Sztein ,  Qiyuan Wei

IPC: H01S5/028 ,  H01S5/02 ,  H01S5/042 ,  H01S5/343 ,  H01S5/32 ,  H01S5/20 ,  H01S5/22

CPC classification number: H01S5/0287 ,  H01S5/0203 ,  H01S5/0282 ,  H01S5/0425 ,  H01S5/34333 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3202 ,  H01S2304/04

Abstract: Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.

公开(公告)号：US11705689B2

公开(公告)日：2023-07-18

申请号：US17377835

申请日：2021-07-16

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

IPC: H01S5/32 ,  H01S5/02 ,  H01S5/343 ,  H01S5/0234

CPC classification number: H01S5/0203 ,  H01S5/0202 ,  H01S5/0205 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0234 ,  H01S5/3202 ,  H01S5/320275 ,  H01S5/34333 ,  H01S5/34346

Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

公开(公告)号：US11569637B2

公开(公告)日：2023-01-31

申请号：US17143912

申请日：2021-01-07

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01S5/22 ,  H01S5/343 ,  H01S5/02 ,  H01S5/20 ,  H01S5/32 ,  H01S5/00 ,  H01S5/40 ,  H01S5/02325 ,  H01S5/02345

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

公开(公告)号：US11342727B1

公开(公告)日：2022-05-24

申请号：US16903147

申请日：2020-06-16

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  James W. Raring

IPC: H01L29/20 ,  H01S5/02 ,  H01S5/00 ,  H01L33/16 ,  H01L23/00 ,  H01S5/343 ,  H01S5/22 ,  H01S5/32 ,  H01S5/042 ,  H01S5/028 ,  H01L33/50 ,  H01S5/0234

Abstract: In an example, the present invention provides a gallium and nitrogen containing structure. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates having one or more epitaxially grown layers. The structure has a first handle substrate coupled to each of the substrates. The orientation of a reference crystal direction for each of the substrates are parallel to within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrates.

公开(公告)号：US20220077658A1

公开(公告)日：2022-03-10

申请号：US17477016

申请日：2021-09-16

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Vlad Novotny

IPC: H01S5/40 ,  H01L33/00 ,  H01S5/323 ,  H01L23/00 ,  H01S5/02 ,  H01S5/0234

Abstract: A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.