公开(公告)号：US11024532B2

公开(公告)日：2021-06-01

申请号：US16101358

申请日：2018-08-10

Applicant: Lam Research Corporation

Inventor： Alexander Matyushkin ,  Alexei Marakhtanov ,  John Patrick Holland ,  Keith Gaff ,  Felix Kozakevich

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/683

Abstract: A wafer support structure for use in a chamber used for semiconductor fabrication of wafers is provided. The wafer support structure includes a dielectric block. A first electrode is embedded in a top half of the dielectric block. The first electrode is configured for connection to a direct current (DC) power source. A second electrode is embedded in a bottom half of the dielectric block. A vertical connection is embedded in the dielectric block for electrically coupling the second electrode to the first electrode.

公开(公告)号：US10923380B2

公开(公告)日：2021-02-16

申请号：US15894670

申请日：2018-02-12

Applicant: Lam Research Corporation

Inventor： Christopher Kimball ,  Keith Gaff ,  Feng Wang

IPC: H01L21/683 ,  H01L21/66 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  H01J37/00

Abstract: An edge ring for use in a plasma processing chamber with a chuck is provided. An edge ring body has a first surface to be placed over and facing the chuck, wherein the first surface forms a ring around an aperture. A first elastomer ring is integrated to the first surface and extending around the aperture.

公开(公告)号：US10720346B2

公开(公告)日：2020-07-21

申请号：US15183260

申请日：2016-06-15

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Keith Gaff ,  Neil Benjamin ,  Keith Comendant

IPC: H01L21/67 ,  C23C14/54 ,  C23C16/458 ,  H01L21/683 ,  H01L21/3065 ,  H05B1/02 ,  H05B3/26 ,  H05B3/00 ,  C23C14/50 ,  C23C16/46 ,  C23C16/509 ,  H01J37/32 ,  C23C4/134 ,  C23C4/10 ,  C23C14/10 ,  C23C14/34 ,  C23C16/40 ,  H01L21/02 ,  H01L21/285 ,  H01L21/311 ,  H01L21/3213

Abstract: A substrate support in a semiconductor plasma processing apparatus, comprises multiple independently controllable thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the thermal zones. A substrate support in which the substrate support is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the substrate support include bonding together ceramic or polymer sheets having thermal zones, power supply lines, power return lines and vias.

公开(公告)号：US20180148835A1

公开(公告)日：2018-05-31

申请号：US15363558

申请日：2016-11-29

Applicant: Lam Research Corporation

Inventor： Ann Erickson ,  Keith Gaff ,  Devin Ramdutt

IPC: C23C16/44 ,  H01L21/683

CPC classification number: C23C16/4411 ,  C23C16/463 ,  C23C16/505 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6875

Abstract: A method is provided and includes: determining a temperature distribution pattern across a substrate or a support plate of a substrate support; determining, based on the temperature distribution pattern, a number of masks to apply to a top surface of the support plate, where the number of masks is greater than or equal to two; and determining patterns of the masks based on the temperature distribution pattern; and applying the masks over the top surface. The method further includes: performing a first machining process to remove a portion of the support plate unprotected by the masks to form first mesas and first recessed areas between the first mesas; removing a first mask from the support plate; performing a second machining process to form second recessed areas and at least one of second mesas or a first seal band area; and removing a second mask from the support plate.

公开(公告)号：US20140045337A1

公开(公告)日：2014-02-13

申请号：US14056604

申请日：2013-10-17

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Keith Gaff ,  Neil Benjamin ,  Keith Comendant

IPC: H05B1/02 ,  H01L21/3065 ,  H05B3/26

CPC classification number: H01L21/67103 ,  C23C14/50 ,  C23C14/541 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/509 ,  H01J37/32091 ,  H01J37/32724 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01J2237/3342 ,  H01J2237/3343 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H05B1/0233 ,  H05B3/00 ,  H05B3/26 ,  Y10T29/49083 ,  Y10T29/49099

Abstract: An exemplary method is directed to powering heaters in a substrate support assembly on which a semiconductor substrate is supported. The support assembly has an array of heaters powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to a power supply and at least two of the heaters and each power return line is connected to at least two of the heaters, and a switching device which independently connects each one of the heaters to one of the power supply lines and one of the power return lines so as to provide time-averaged power to each of the heaters by time divisional multiplexing of switches of the switching device. The method includes supplying power to each of the heaters sequentially using a time-domain multiplexing scheme.

Abstract translation: 一种示例性的方法是针对支撑半导体衬底的衬底支撑组件中的加热器供电。 支撑组件具有由两个或更多个电源线和两个或更多个电力返回线供电的加热器阵列，其中每个电源线连接到电源，并且至少两个加热器和每个电力回路线连接到 至少两个加热器，以及开关装置，其将每个加热器独立地连接到电源线中的一个和功率返回线之一，以便通过时分复用提供每个加热器的时间平均功率 开关器件的开关。 该方法包括使用时域复用方案依次提供给每个加热器的功率。

公开(公告)号：US11848177B2

公开(公告)日：2023-12-19

申请号：US15903682

申请日：2018-02-23

Applicant: LAM RESEARCH CORPORATION

Inventor： Feng Wang ,  Keith Gaff ,  Christopher Kimball

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  H01J37/244 ,  H01L21/687

CPC classification number: H01J37/32715 ,  H01J37/244 ,  H01J37/3244 ,  H01J37/32082 ,  H01J37/32522 ,  H01J37/32568 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833 ,  H01J2237/002 ,  H01J2237/3321 ,  H01L21/68742

Abstract: An electrostatic chuck for a substrate processing system is provided. The electrostatic chuck includes: a top plate configured to electrostatically clamp to a substrate and formed of ceramic; an intermediate layer disposed below the top plate; and a baseplate disposed below the intermediate layer and formed of ceramic. The intermediate layer bonds the top plate to the baseplate.

公开(公告)号：US11069553B2

公开(公告)日：2021-07-20

申请号：US15634365

申请日：2017-06-27

Applicant: Lam Research Corporation

Inventor： Alexander Matyushkin ,  John Patrick Holland ,  Harmeet Singh ,  Alexei Marakhtanov ,  Keith Gaff ,  Zhigang Chen ,  Felix Kozakevich

IPC: H01L21/683 ,  H01L21/67

Abstract: A substrate support for a substrate processing system includes a baseplate, a bond layer provided on the baseplate, and a ceramic layer arranged on the bond layer. The ceramic layer includes a first region and a second region located radially outward of the first region, the first region has a first thickness, the second region has a second thickness, and the first thickness is greater than the second thickness.

公开(公告)号：US10002782B2

公开(公告)日：2018-06-19

申请号：US14517095

申请日：2014-10-17

Applicant: Lam Research Corporation

Inventor： Christopher Kimball ,  Keith Gaff ,  Alexander Matyushkin ,  Zhigang Chen, III ,  Keith Comendant

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/285 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32724

Abstract: A substrate processing apparatus for processing substrates comprises a processing chamber in which a substrate is processed. A process gas source is adapted to supply process gas into the processing chamber. A RF energy source is adapted to energize the process gas into a plasma state in the processing chamber. A vacuum source is adapted to exhaust byproducts of the processing from the processing chamber. The processing chamber includes an electrostatic chuck assembly having a layer of ceramic material that includes an upper electrostatic clamping electrode and at least one RF electrode, a temperature controlled RF powered baseplate, and at least one annular electrically conductive gasket extending along an outer portion of an upper surface of the temperature controlled RF powered baseplate. The at least one annular electrically conductive gasket electrically couples the upper surface of the temperature controlled RF powered baseplate to the at least one RF electrode.

公开(公告)号：US09922857B1

公开(公告)日：2018-03-20

申请号：US15343010

申请日：2016-11-03

Applicant: Lam Research Corporation

Inventor： Christopher Kimball ,  Keith Gaff ,  Feng Wang

IPC: H01L21/00 ,  H01L21/683 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/66 ,  H01J37/32 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01J37/00 ,  H01J37/32082 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32697 ,  H01J37/32816 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68785 ,  H01L22/26

Abstract: An edge ring is provided for use with an electrostatic wafer chuck and an electrostatic ring chuck with a central aperture with a cooling groove and with ring clamping electrodes and at least one ring backside temperature channel to regulate the temperature of the edge ring. The edge ring comprises an edge ring body to be placed over the electrostatic ring chuck with ring clamping electrodes, wherein the edge ring body comprises conductive portions which are placed over the ring clamping electrodes, when the edge ring body is placed over the electrostatic ring chuck and a first elastomer ring integrated to a first surface of the edge ring body and surrounding a central aperture of the first surface, wherein when the edge ring body is placed over the electrostatic ring chuck, the first elastomer ring is used to seal the cooling groove.

公开(公告)号：US20170110356A1

公开(公告)日：2017-04-20

申请号：US14887166

申请日：2015-10-19

Applicant: Lam Research Corporation

Inventor： Alexander Matyushkin ,  Alexei Marakhtanov ,  John Patrick Holland ,  Keith Gaff ,  Felix Kozakevich

IPC: H01L21/683 ,  H01L21/687

CPC classification number: H01L21/68785 ,  H01L21/67109 ,  H01L21/6833

Abstract: An Electrostatic Chuck (ESC) in a chamber of a semiconductor manufacturing apparatus is presented for eliminating cooling-gas light-up. One wafer support includes a baseplate connected to a radiofrequency power source, a dielectric block, gas supply channels for cooling the wafer bottom, and first and second electrodes. The dielectric block is situated above the baseplate and supports the wafer when present. The first electrode is embedded in the top half of the dielectric block, where the top surface of the first electrode is substantially parallel to a top surface of the dielectric block, and the first electrode is connected to a DC power source. Further, the second electrode is embedded in a bottom half of the dielectric block, the second electrode being electrically connected to the first electrode, where the bottom surface of the second electrode is substantially parallel to a top surface of the baseplate.