摘要:
A semiconductor memory includes memory cell blocks, a burst-length information generating circuit which generates burst-length information based on a burst length, and a block enable circuit which receives the burst-length information. The block enable circuit selectively enables one of the memory cell blocks when the burst length is equal to or shorter than a predetermined burst length and selectively enables a plurality of memory cell blocks based on the burst length when the burst length is longer than the predetermined burst length. Data are read from the above-mentioned one or plurality of memory cell blocks.
摘要:
The present invention relates to an internal voltage generating circuit. The internal voltage generating circuit comprises a reference voltage generating circuit for generating a reference voltage, which does not depend on an external power supply; and a comparator including a first input terminal, to which the reference voltage is supplied, a second input terminal, for comparing the voltages of the first and second input terminals and generating an output voltage according to the difference thereof at the output terminal; and an impedance element, which is selectively inserted between the output terminal and the second input terminal of the comparator according to an operation mode. An internal power supply voltage, which has a constant voltage during normal operation and has an accurate higher voltage during acceleration test, can be generated at the output terminal by inserting or not inserting a suitable impedance element between the second input terminal and output terminal according to the operation mode. The above-described comparator can be realized by a common differential amplifying circuit, for example. Further, a reference voltage value at normal operation can be fine-tuned by subdividing the impedance element. In the same way, the voltage value at acceleration test can be also fine-tuned by subdividing the impedance element.
摘要:
A memory circuit requiring refresh operations a first circuit which receives a command in synchronization with a clock signal, and which generates a first internal command internally and a second circuit which generates a second internal command, e.g., a refresh command, internally in a prescribed refresh cycle. And an internal circuit, according to said first internal command, executes corresponding control through clock-synchronous operations, and when said refresh command is issued, sequentially executes control corresponding to the refresh command and control corresponding to said first internal command through clock-asynchronous operations. When a refresh timing signal is generated, the refresh operation can be intrupted among the external command operations.
摘要:
According to the present invention, a memory circuit requiring refresh operations a first circuit which receives a command in synchronization with a clock signal, and which generates a first internal command internally and a second circuit which generates a second internal command, e.g., a refresh command, internally in a prescribed refresh cycle. And an internal circuit, according to said first internal command, executes corresponding control through clock-synchronous operations, and when said refresh command is issued, sequentially executes control corresponding to the refresh command and control corresponding to said first internal command through clock-asynchronous operations. According to the present invention, when a refresh timing signal is generated, the refresh operation can be intrupted among the external command operations.
摘要:
A partial area for retaining data during low power consumption mode is composed of a single first memory cell out of a plurality of memory cells connected to a bit line. An operation control circuit operates any of the memory cells selected in accordance with an address signal during normal operation mode for performing a read operation and a write operation. The operation control circuit keeps latching data retained by the first memory cell in the partial area into a sense amplifier during the low power consumption mode. This eliminates the need for a refresh operation for retaining the data in the first memory cell during the low power consumption mode. Since the data can be retained without a refresh operation, it is possible to reduce the power consumption during the low power consumption mode.
摘要:
A semiconductor chip is secured in a state deformed into a substantially cylinder shape by a coating material formed on its surface. The deformed semiconductor chip is flip-chip connected to an interposer and sealed with sealing resin onto the interposer. Solder balls are provided, as external terminals, on the other side of the interposer.
摘要:
A semiconductor device mounted on a board or the like and having a test circuit, having the function of carrying out a contact test at a low cost on the terminals of the semiconductor, is disclosed. The semiconductor device comprises a terminal test circuit for testing a state of a contact of an external terminal and a test mode control circuit unit. The test mode control circuit unit outputs a signal indicating a first operation mode upon application of a power supply voltage thereto, outputs a test mode signal to the terminal test circuit in response to a control signal input to a specific terminal such as a chip select terminal, and outputs a signal indicating a second operation mode in response to the number of times in which the level of the control signal input to the specific terminal changes. Preferably, the first operation mode is a terminal test mode, and the second operation mode is a normal operation mode. A method of testing the semiconductor device and a semiconductor integrated circuit, having the test circuit, are also disclosed.
摘要:
A semiconductor memory device, such as a DRAM, which needs to be refreshed for retaining data, is provided with a storing portion for storing data therein, and a busy signal outputting portion outputting a busy signal during the refresh operation.
摘要:
A semiconductor memory device has a read data line, a write data line, a data holding circuit, and a data writing circuit. The data holding circuit holds data on the write data line, and the data writing circuit writes the data held on the write data line into a memory cell. Further, a semiconductor memory device has a read data line, a write data line, and an address information holding circuit. The address information holding circuit holds address information that is input in relation to write data, and when an access occurs to the address held in the address information holding circuit, data held on the write data line is written into a memory cell corresponding to the address.
摘要:
A semiconductor device mounted on a board or the like and having a test circuit, having the function of carrying out a contact test at a low cost on the terminals of the semiconductor, is disclosed. The semiconductor device comprises a terminal test circuit for testing a state of a contact of an external terminal and a test mode control circuit unit. The test mode control circuit unit outputs a signal indicating a first operation mode upon application of a power supply voltage thereto, outputs a test mode signal to the terminal test circuit in response to a control signal input to a specific terminal such as a chip select terminal, and outputs a signal indicating a second operation mode in response to the number of times in which the level of the control signal input to the specific terminal changes. Preferably, the first operation mode is a terminal test mode, and the second operation mode is a normal operation mode. A method of testing the semiconductor device and a semiconductor integrated circuit, having the test circuit, are also disclosed.