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115 条记录 (耗时 0.031 秒)

    Apparatus and methods to clean copper contamination on wafer edge
    11.
    发明授权
    Apparatus and methods to clean copper contamination on wafer edge 失效
    清洁晶圆边缘铜污染的设备和方法

    公开(公告)号：US06813796B2

    公开(公告)日：2004-11-09

    申请号：US10357137

    申请日：2003-02-03

    申请人： Sudipto Ranendra Roy ,  Subhash Gupta ,  Simon Chooi ,  Xu Yi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Paul Kwok Keung Ho

    发明人： Sudipto Ranendra Roy ,  Subhash Gupta ,  Simon Chooi ,  Xu Yi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Paul Kwok Keung Ho

    IPC分类号： B08B700

    CPC分类号： B08B1/04 ,  B08B3/04

    摘要： A new apparatus is provided that can be applied to clean outer edges of semiconductor substrates. Under the first embodiment of the invention, a brush is mounted on the surface of the substrate around the periphery of the substrate, chemicals are fed to the surface that is being cleaned by means of a hollow core on which the cleaning brush is mounted. The surface that is being cleaned rotates at a relatively high speed thereby causing the chemicals that are deposited on this surface (by the brush) to remain in the edge of the surface. Under the second embodiment of the invention, a porous roller is mounted between a chemical reservoir and the surface that is being cleaned, the surface that is being cleaned rotates at a relatively high speed. The chemicals that are deposited by the interfacing porous roller onto the surface that is being cleaned therefore remain at the edge of this surface thereby causing optimum cleaning action of the edge of the surface. After contaminants have been removed in this manner from the surface, the surface can be further cleaned by applying DI water.

    摘要翻译： 提供了可用于清洁半导体衬底的外边缘的新设备。 在本发明的第一实施例中，刷子安装在基板周围的基板的表面上，化学品通过其上安装有清洁刷的中空芯被供给到被清洁的表面。 待清洁的表面以相对高的速度旋转，从而使沉积在该表面（由刷子）上的化学物质残留在表面的边缘。 在本发明的第二实施例中，多孔辊安装在化学容器和待清洁的表面之间，待清洁的表面以相对较高的速度旋转。 因此，由界面多孔辊沉积在待清洗的表面上的化学物质保留在该表面的边缘，从而引起表面边缘的最佳清洁作用。 污染物以这种方式从表面除去后，可以通过加入去离子水进一步清洁表面。

    Method for cleaning semiconductor structures using hydrocarbon and solvents in a repetitive vapor phase/liquid phase sequence
    19.
    发明授权
    Method for cleaning semiconductor structures using hydrocarbon and solvents in a repetitive vapor phase/liquid phase sequence 失效
    在重复气相/液相序列中使用烃和溶剂清洗半导体结构的方法

    公开(公告)号：US06692579B2

    公开(公告)日：2004-02-17

    申请号：US09764244

    申请日：2001-01-19

    申请人： Sudipto Ranendra Roy ,  Yi Xu ,  Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Paul Kwok Keung Ho ,  Subhash Gupta

    发明人： Sudipto Ranendra Roy ,  Yi Xu ,  Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Paul Kwok Keung Ho ,  Subhash Gupta

    IPC分类号： B08B300

    CPC分类号： H01L21/02057 ,  B08B3/00 ,  C11D7/24 ,  C11D7/5027 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/6704

    摘要： A method for cleaning a semiconductor structure using vapor phase condensation with a thermally vaporized cleaning agent, a hydrocarbon vaporized by pressure variation, or a combination of the two. In the thermally vaporized cleaning agent process, a semiconductor structure is lowered into a vapor blanket in a thermal gradient cleaning chamber at atmospheric pressure formed by heating a liquid cleaning agent below the vapor blanket and cooling the liquid cleaning agent above the vapor blanket causing it to condense and return to the bottom of the thermal gradient cleaning chamber. The semiconductor structure is then raised above the vapor blanket and the cleaning agent condenses on all of the surfaces of the semiconductor structure removing contaminants and is returned to the bottom of the chamber by gravity. In the pressurized hydrocarbon process, a semiconductor structure is placed into a variable pressure cleaning chamber, having a piston which changes the pressure by reducing or increasing the volume of the chamber. The semiconductor structure first exposed to the hydrocarbon in vapor phase, then the piston is lowered to condense the hydrocarbon. A semiconductor structure can be cleaned by either or both of these processes by repetitive vaporization/condensation cycles.

    摘要翻译： 一种使用与气相清洗剂进行气相冷凝的半导体结构，通过压力变化蒸发的烃或两者的组合来清洗半导体结构的方法。 在热蒸发清洗剂方法中，半导体结构在大气压力的热梯度清洗室内被降低成蒸气层，所述热梯度清洗室通过将蒸气层下方的液体清洗剂加热而形成，并将该液体清洁剂冷却至蒸气层以上 冷凝并返回到热梯度清洗室的底部。 然后将半导体结构升高到蒸气层上方，并且清洁剂在半导体结构的所有表面上冷凝除去杂质，并通过重力返回到室的底部。 在加压烃工艺中，将半导体结构放置在可变压力清洁室中，其具有通过减小或增加室的体积来改变压力的活塞。 半导体结构首先暴露于气相中的烃，然后降低活塞以使烃冷凝。 半导体结构可以通过这些过程中的任一个或两者通过重复的蒸发/冷凝循环进行清洁。