公开(公告)号：US20050003215A1

公开(公告)日：2005-01-06

申请号：US10830465

申请日：2004-04-21

申请人： Nigel Hacker ,  Lisa Figge ,  Scott Lefferts

发明人： Nigel Hacker ,  Lisa Figge ,  Scott Lefferts

IPC分类号： C08G77/08 ,  C08G77/12 ,  B32B9/04 ,  C08G77/04 ,  C08L83/00

CPC分类号： C08G77/08 ,  C08G77/12 ,  Y10T428/31663

摘要： Novel processes for preparing hydridosiloxane and organohydridosiloxane resins are disclosed. The processes of the invention broadly provide for the steps of contacting a silane monomer with a phase transfer catalyst in the presence of a reaction mixture that includes a nonpolar, e.g., hydrocarbon, solvent, and a polar solvent, e.g., alcohol and water. The process is conducted under conditions effective to catalytically convert said silane monomer into hydridosiloxane and organohydridosiloxane resins. Recovery of the products is advantageously aided by the ease of separating the phase transfer catalyst from the dual phase reaction mixture by separating the immiscible polar solvent carrying the catalyst from the nonpolar solvent that carries the product. Hydridosiloxane and organohydridosiloxane resins produced by the processes of the invention are also provided.

摘要翻译： 公开了制备氢硅氧烷和有机氢硅氧烷树脂的新方法。 本发明的方法广泛地提供了在包含非极性例如烃，溶剂和极性溶剂如醇和水的反应混合物存在下使硅烷单体与相转移催化剂接触的步骤。 该方法在有效地将所述硅烷单体催化转化成氢硅氧烷和有机氢硅氧烷树脂的条件下进行。 通过将携带催化剂的不混溶的极性溶剂与携带产物的非极性溶剂分离，可有利地辅助相分离催化剂与双相反应混合物的分离。 还提供了通过本发明的方法制备的氢硅氧烷和有机氢硅氧烷树脂。

公开(公告)号：US06967172B2

公开(公告)日：2005-11-22

申请号：US10680026

申请日：2003-10-07

申请人： Roger Leung ,  Denis Endisch ,  Songyuan Xie ,  Nigel Hacker ,  Yanpei Deng

发明人： Roger Leung ,  Denis Endisch ,  Songyuan Xie ,  Nigel Hacker ,  Yanpei Deng

IPC分类号： H01L21/316 ,  H01L21/302

CPC分类号： H01L21/02282 ,  H01L21/02203 ,  H01L21/316 ,  H01L21/76837

摘要： A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.

摘要翻译： 使用由分散在溶剂中的致密材料构成的纳米颗粒的胶体悬浮液来形成具有低热收缩率的间隙填充介电材料。 电介质材料特别适用于预金属电介质和浅沟槽隔离应用。 根据形成电介质材料的方法，将胶体悬浮液沉积在基底上并干燥以形成多孔中间层。 通过用液相基质材料（例如旋涂聚合物）渗透，然后通过用气相基质材料渗透，随后固化，或通过单独固化来改性中间层，从而提供间隙填充 ，耐热稳定的，耐蚀刻的介电材料。

公开(公告)号：US20050032357A1

公开(公告)日：2005-02-10

申请号：US10886061

申请日：2004-07-08

申请人： Juha Rantala ,  Nigel Hacker ,  Jason Reid ,  William McLaughlin ,  Teemu Tormanen

发明人： Juha Rantala ,  Nigel Hacker ,  Jason Reid ,  William McLaughlin ,  Teemu Tormanen

IPC分类号： G01N27/00

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/00

摘要： An integrated circuit device is provided having a substrate and areas of electrically insulating and electrically conductive material, where the electrically insulating material is a hybrid organic-inorganic material that requires no or minimal CMP and which can withstand subsequent processing steps at temperatures of 450° C. or more.

摘要翻译： 提供了具有基板和电绝缘和导电材料的区域的集成电路器件，其中电绝缘材料是不需要或最小CMP的混合有机 - 无机材料，并且其可以承受450℃温度下的后续加工步骤 。 或者更多。

公开(公告)号：US06653718B2

公开(公告)日：2003-11-25

申请号：US10188433

申请日：2002-07-03

申请人： Roger Leung ,  Denis Endisch ,  Songyuan Xie ,  Nigel Hacker ,  Yanpei Deng

发明人： Roger Leung ,  Denis Endisch ,  Songyuan Xie ,  Nigel Hacker ,  Yanpei Deng

IPC分类号： H01L2358

CPC分类号： H01L21/02129 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/316 ,  H01L21/31695 ,  H01L21/76224 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76837 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.

公开(公告)号：US07504470B2

公开(公告)日：2009-03-17

申请号：US11215303

申请日：2005-08-31

申请人： Juha T. Rantala ,  Jyri Paulasaari ,  Janne Kylmä ,  Turo T. Törmänen ,  Jarkko Pietikäinen ,  Nigel Hacker ,  Admir Hadzic

发明人： Juha T. Rantala ,  Jyri Paulasaari ,  Janne Kylmä ,  Turo T. Törmänen ,  Jarkko Pietikäinen ,  Nigel Hacker ,  Admir Hadzic

IPC分类号： C08G77/18

CPC分类号： C09D183/14 ,  C08G77/50 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/76822 ,  H01L21/76837 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  H01L2924/00

摘要： A thin film comprising a composition obtained by polymerizing a monomer having the formula I: wherein: R1 is a hydrolysable group, R2 is a polarizability reducing organic group, and R3 is a bridging hydrocarbon group, to form a siloxane material. The invention also concerns methods for producing the thin films. The thin film can be used a low k dielectric in integrated circuit devices. The novel dielectric materials have excellent properties of planarization resulting in good local and global planarity on top a semiconductor substrate topography, which reduces or eliminates the need for chemical mechanical planarization after dielectric and oxide liner deposition.

摘要翻译： 一种薄膜，其包含通过聚合具有式I的单体而获得的组合物：其中：R 1是可水解基团，R 2是极化率降低的有机基团，并且R 3是桥连烃基，以形成硅氧烷材料。 本发明还涉及制备薄膜的方法。 该薄膜可用于集成电路器件中的低k电介质。 新型介电材料具有优异的平面化特性，从而在半导体衬底形貌的顶部产生良好的局部和全局平面性，从而减少或消除了电介质和氧化物衬垫沉积后对化学机械平面化的需要。

公开(公告)号：US20090278254A1

公开(公告)日：2009-11-12

申请号：US12292968

申请日：2008-12-01

申请人： Juha T. Rantala ,  Nigel Hacker ,  Jason Reid ,  William McLaughlin ,  Teemu T. Tormanen

发明人： Juha T. Rantala ,  Nigel Hacker ,  Jason Reid ,  William McLaughlin ,  Teemu T. Tormanen

IPC分类号： H01L23/522 ,  H01L21/768 ,  H01L21/3105

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/00

摘要： An integrated circuit device is provided having a substrate and areas of electrically insulating and electrically conductive material, where the electrically insulating material is a hybrid organic-inorganic material that requires no or minimal CMP and which can withstand subsequent processing steps at temperatures of 450° C. or more.

摘要翻译： 提供了具有基板和电绝缘和导电材料的区域的集成电路器件，其中电绝缘材料是不需要或最小CMP的混合有机 - 无机材料，并且其可以承受450℃温度下的后续加工步骤 。 或者更多。

公开(公告)号：US20050064726A1

公开(公告)日：2005-03-24

申请号：US10796286

申请日：2004-03-10

申请人： Jason Reid ,  Nigel Hacker ,  Nina Pirila ,  Juha Rantala ,  William McLaughlin

发明人： Jason Reid ,  Nigel Hacker ,  Nina Pirila ,  Juha Rantala ,  William McLaughlin

IPC分类号： H01L21/312 ,  H01L21/314 ,  B32B9/04 ,  C22C29/00 ,  H01L21/31

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/3121 ,  Y10T428/31663 ,  Y10T428/31678

摘要： A method of forming a low dielectric constant structure. The method comprises providing at a first temperature a dielectric material having a first dielectric constant and a first elastic modulus, and curing the dielectric material by a thermal curing process, in which the material is heated to a second temperature by increasing the temperature at an average rate of at least 1° C. per second. As a result a densified, dielectric material is obtained which has a low dielectric constant.

摘要翻译： 一种形成低介电常数结构的方法。 该方法包括在第一温度下提供具有第一介电常数和第一弹性模量的介电材料，并通过热固化工艺固化介电材料，其中通过以平均值升高温度将材料加热至第二温度 速率至少为1℃/秒。 结果获得了具有低介电常数的致密的介电材料。

公开(公告)号：US06444495B1

公开(公告)日：2002-09-03

申请号：US09761529

申请日：2001-01-11

申请人： Roger Leung ,  Denis Endisch ,  Songyuan Xie ,  Nigel Hacker ,  Yanpei Deng

发明人： Roger Leung ,  Denis Endisch ,  Songyuan Xie ,  Nigel Hacker ,  Yanpei Deng

IPC分类号： H01L2144

CPC分类号： H01L21/7682 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/316 ,  H01L21/31695 ,  H01L21/76224 ,  H01L21/76837 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.

摘要翻译： 使用由分散在溶剂中的致密材料构成的纳米颗粒的胶体悬浮液来形成具有低热收缩率的间隙填充介电材料。 电介质材料特别适用于预金属电介质和浅沟槽隔离应用。 根据形成电介质材料的方法，将胶体悬浮液沉积在基底上并干燥以形成多孔中间层。 通过用液相基质材料（例如旋涂聚合物）渗透，然后通过用气相基质材料渗透，随后固化，或通过单独固化来改性中间层，从而提供间隙填充 ，耐热稳定的，耐蚀刻的介电材料。

公开(公告)号：US20070190735A1

公开(公告)日：2007-08-16

申请号：US11784081

申请日：2007-04-05

申请人： Nigel Hacker ,  Michael Thomas ,  James Drage

发明人： Nigel Hacker ,  Michael Thomas ,  James Drage

IPC分类号： G03F7/26

CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/3122 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76831 ,  Y10T428/24802

摘要： Silica dielectric films, whether nanoporous foamed silica dielectrics or nonporous silica dielectrics are readily damaged by fabrication methods and reagents that reduce or remove hydrophobic properties from the dielectric surface. The invention provides for methods of imparting hydrophobic properties to such damaged silica dielectric films present on a substrate. The invention also provides plasma-based methods for imparting hydrophobicity to both new and damaged silica dielectric films. Semiconductor devices prepared by the inventive processes are also provided.

摘要翻译： 无论是纳米多孔泡沫二氧化硅电介质还是无孔二氧化硅电介质，二氧化硅电介质膜都容易被制造方法和试剂所破坏，这些方法和试剂可以从电介质表面减少或去除疏水性质。 本发明提供了赋予衬底上存在的这种损坏的二氧化硅介电膜的疏水性的方法。 本发明还提供了用于赋予新的和损坏的二氧化硅介电膜的疏水性的基于等离子体的方法。 还提供了通过本发明方法制备的半导体器件。

公开(公告)号：US20070063188A1

公开(公告)日：2007-03-22

申请号：US10552737

申请日：2004-04-13

申请人： Juha Rantala ,  Jyri Paulasaari ,  Jarkko Pietikainen ,  Teemu Tormanen ,  Nigel Hacker ,  Nungavaram Viswanathan

发明人： Juha Rantala ,  Jyri Paulasaari ,  Jarkko Pietikainen ,  Teemu Tormanen ,  Nigel Hacker ,  Nungavaram Viswanathan

IPC分类号： H01L51/00 ,  C07F7/12

CPC分类号： C07F7/12 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02345 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/32139 ,  H01L21/76801

摘要： The present invention relates to thin films suitable as dielectrics in integrated circuits and for other similar applications and to methods for the production thereof. In particular, the invention concerns thin films comprising at least partially cross-linked siloxane structures obtainable by hydrolysis of one or more silicon compounds of the general formula R1—R2—Si—(X1)3, wherein X1 is a leaving group, R2 is a cycloalkyl having from 3 to 16 carbon atoms, an aryl having from 5 to 18 carbon atoms or a polycyclic alkyl group having from 7 to 16 carbon atoms, and R1 is a substituent of R2 selected from alkyl groups having from 1 to 4 carbon atoms, alkenyl groups having from 2 to 5 carbon atoms, alkynyl groups having from 2 to 5 carbon atoms, and aromatic groups having 5 or 6 carbon atoms, each of said groups being optionally substituted, and Cl and F.

摘要翻译： 本发明涉及适用于集成电路和其他类似应用的电介质的薄膜及其生产方法。 特别地，本发明涉及包含至少部分交联的硅氧烷结构的薄膜，所述硅氧烷结构可通过一种或多种通式为R 1 -R 2 - 其中X 1是离去基团，R 2是具有（X 1）3个 3至16个碳原子的芳基，具有5至18个碳原子的芳基或具有7至16个碳原子的多环烷基，R 1是R 2的取代基， 选自具有1至4个碳原子的烷基，具有2至5个碳原子的烯基，具有2至5个碳原子的炔基，以及具有5或6个碳原子的芳族基团，每个所述基团是任选的 取代，Cl和F.