公开(公告)号：US20090278254A1

公开(公告)日：2009-11-12

申请号：US12292968

申请日：2008-12-01

申请人： Juha T. Rantala ,  Nigel Hacker ,  Jason Reid ,  William McLaughlin ,  Teemu T. Tormanen

发明人： Juha T. Rantala ,  Nigel Hacker ,  Jason Reid ,  William McLaughlin ,  Teemu T. Tormanen

IPC分类号： H01L23/522 ,  H01L21/768 ,  H01L21/3105

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/00

摘要： An integrated circuit device is provided having a substrate and areas of electrically insulating and electrically conductive material, where the electrically insulating material is a hybrid organic-inorganic material that requires no or minimal CMP and which can withstand subsequent processing steps at temperatures of 450° C. or more.

摘要翻译： 提供了具有基板和电绝缘和导电材料的区域的集成电路器件，其中电绝缘材料是不需要或最小CMP的混合有机 - 无机材料，并且其可以承受450℃温度下的后续加工步骤 。 或者更多。

公开(公告)号：US20050032357A1

公开(公告)日：2005-02-10

申请号：US10886061

申请日：2004-07-08

申请人： Juha Rantala ,  Nigel Hacker ,  Jason Reid ,  William McLaughlin ,  Teemu Tormanen

发明人： Juha Rantala ,  Nigel Hacker ,  Jason Reid ,  William McLaughlin ,  Teemu Tormanen

IPC分类号： G01N27/00

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/00

摘要： An integrated circuit device is provided having a substrate and areas of electrically insulating and electrically conductive material, where the electrically insulating material is a hybrid organic-inorganic material that requires no or minimal CMP and which can withstand subsequent processing steps at temperatures of 450° C. or more.

摘要翻译： 提供了具有基板和电绝缘和导电材料的区域的集成电路器件，其中电绝缘材料是不需要或最小CMP的混合有机 - 无机材料，并且其可以承受450℃温度下的后续加工步骤 。 或者更多。

公开(公告)号：US20050064726A1

公开(公告)日：2005-03-24

申请号：US10796286

申请日：2004-03-10

申请人： Jason Reid ,  Nigel Hacker ,  Nina Pirila ,  Juha Rantala ,  William McLaughlin

发明人： Jason Reid ,  Nigel Hacker ,  Nina Pirila ,  Juha Rantala ,  William McLaughlin

IPC分类号： H01L21/312 ,  H01L21/314 ,  B32B9/04 ,  C22C29/00 ,  H01L21/31

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/3121 ,  Y10T428/31663 ,  Y10T428/31678

摘要： A method of forming a low dielectric constant structure. The method comprises providing at a first temperature a dielectric material having a first dielectric constant and a first elastic modulus, and curing the dielectric material by a thermal curing process, in which the material is heated to a second temperature by increasing the temperature at an average rate of at least 1° C. per second. As a result a densified, dielectric material is obtained which has a low dielectric constant.

摘要翻译： 一种形成低介电常数结构的方法。 该方法包括在第一温度下提供具有第一介电常数和第一弹性模量的介电材料，并通过热固化工艺固化介电材料，其中通过以平均值升高温度将材料加热至第二温度 速率至少为1℃/秒。 结果获得了具有低介电常数的致密的介电材料。

公开(公告)号：US07622399B2

公开(公告)日：2009-11-24

申请号：US10796286

申请日：2004-03-10

申请人： Jason Reid ,  Nigel Hackera ,  Nina Pirilä ,  Juha Rantala ,  William McLaughlin

发明人： Jason Reid ,  Nigel Hackera ,  Nina Pirilä ,  Juha Rantala ,  William McLaughlin

IPC分类号： H01L21/469

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/3121 ,  Y10T428/31663 ,  Y10T428/31678

摘要： A method of forming a low dielectric constant structure. The method comprises providing at a first temperature a dielectric material having a first dielectric constant and a first elastic modulus, and curing the dielectric material by a thermal curing process, in which the material is heated to a second temperature by increasing the temperature at an average rate of at least 1° C. per second. As a result a densified, dielectric material is obtained which has a low dielectric constant.

摘要翻译： 一种形成低介电常数结构的方法。 该方法包括在第一温度下提供具有第一介电常数和第一弹性模量的介电材料，并通过热固化工艺固化介电材料，其中通过以平均值升高温度将材料加热至第二温度 速率至少为1℃/秒。 结果获得了具有低介电常数的致密的介电材料。

公开(公告)号：US20060131753A1

公开(公告)日：2006-06-22

申请号：US11341638

申请日：2006-01-30

申请人： Juha Rantala ,  Jason Reid ,  Nungavram Viswanathan ,  T. Teemu Tormanen

发明人： Juha Rantala ,  Jason Reid ,  Nungavram Viswanathan ,  T. Teemu Tormanen

IPC分类号： H01L23/48

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/316 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： An integrated circuit is provided comprising a substrate and discrete areas of electrically insulating and electrically conductive material, wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more and a dielectric constant of 3.0 or less. The integrated circuit can be made by a method comprising: providing a substrate; forming discrete areas of electrically insulating and electrically conductive material on the substrate; wherein the electrically insulating material is deposited on the substrate followed by heating at a temperature of 350° C. or less; and wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more after densification. Also disclosed is a a method for making an integrated circuit comprising performing a dual damascene method with an electrically conductive material and a dielectric, the dielectric being a directly photopatterned hybrid organic-inorganic material.

摘要翻译： 提供一种集成电路，其包括基板和电绝缘和导电材料的离散区域，其中电绝缘材料是具有1.45g / cm 3以上的密度的杂化有机 - 无机材料 介电常数为3.0以下。 集成电路可以通过以下方法制成：包括：提供衬底; 在衬底上形成电绝缘和导电材料的离散区域; 其中所述电绝缘材料沉积在所述基板上，然后在350℃或更低的温度下加热; 并且其中所述电绝缘材料是在致密化之后具有1.45g / cm 3以上的密度的混合有机 - 无机材料。 还公开了一种用于制造集成电路的方法，包括用导电材料和电介质进行双镶嵌方法，电介质是直接光刻图案化的杂化有机 - 无机材料。

公开(公告)号：US20110108937A1

公开(公告)日：2011-05-12

申请号：US12944663

申请日：2010-11-11

申请人： Jason Reid

发明人： Jason Reid

IPC分类号： H01L29/82

CPC分类号： G11C11/16 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01L43/08

摘要： Disclosed herein is a thermally-assisted magnetic tunnel junction structure including a thermal barrier. The thermal barrier is composed of a cermet material in a disordered form such that the thermal barrier has a low thermal conductivity and a high electric conductivity. Compared to conventional magnetic tunnel junction structures, the disclosed structure can be switched faster and has improved compatibility with standard semiconductor fabrication processes.

摘要翻译： 本文公开了包括热障的热辅助磁隧道结结构。 热障由无定形形式的金属陶瓷材料构成，使得热障具有低导热性和高导电性。 与传统的磁性隧道结结构相比，所公开的结构可以更快地切换并改善与标准半导体制造工艺的兼容性。

公开(公告)号：US20060057801A1

公开(公告)日：2006-03-16

申请号：US11213427

申请日：2005-08-29

申请人： Juha Rantala ,  Jason Reid ,  Nungavram Viswanathan ,  T.Teemu Tormanen

发明人： Juha Rantala ,  Jason Reid ,  Nungavram Viswanathan ,  T.Teemu Tormanen

IPC分类号： H01L21/8238

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/316 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： Thin films are disclosed that are suitable as dielectrics in IC's and for other similar applications. In particular, the invention concerns thin films comprising compositions obtainable by hydrolysis of two or more silicon compounds, which yield an at least partially cross-linked siloxane structure. The invention also concerns a method for producing such films by preparing siloxane compositions by hydrolysis of suitable reactants, by applying the hydrolyzed compositions on a substrate in the form of a thin layer and by curing the layer to form a film. In one example, a thin film comprising a composition is obtained by hydrolyzing a monomeric silicon compound having at least one hydrocarbyl radical, containing an unsaturated carbon-to-carbon bond, and at least one hydrolyzable group attached to the silicon atom of the compound with another monomeric silicon compound having at least one aryl group and at least one hydrolyzable group attached to the silicon atom of the compound to form a siloxane material.

公开(公告)号：US5729054A

公开(公告)日：1998-03-17

申请号：US473464

申请日：1995-06-07

申请人： Scott R. Summerfelt ,  Jason Reid ,  Marc Nicolet ,  Elzbieta Kolawa

发明人： Scott R. Summerfelt ,  Jason Reid ,  Marc Nicolet ,  Elzbieta Kolawa

IPC分类号： H01G4/33 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/92 ,  H01L23/48

CPC分类号： H01L28/60 ,  H01L28/55 ,  H01L28/75

摘要： A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), an noble-metal-insulator-alloy barrier layer (e.g. Pd-Si-N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the noble-metal-insulator-alloy layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The noble-metal-insulator-alloy barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.

摘要翻译： 本发明的优选实施方案包括可氧化层（例如TiN 50），覆盖在可氧化层上的贵金属 - 绝缘体 - 合金阻挡层（例如Pd-Si-N 34），上层的氧稳定层（例如铂36） 贵金属 - 绝缘体合金层和覆盖氧稳定层的高介电常数材料层（例如钛酸钡锶38）。 贵金属 - 绝缘体 - 合金阻挡层基本上抑制氧扩散到可氧化层，从而最小化可氧化层的有害氧化。

公开(公告)号：US5696018A

公开(公告)日：1997-12-09

申请号：US487197

申请日：1995-06-07

申请人： Scott R. Summerfelt ,  Jason Reid ,  Marc Nicolet ,  Elzbieta Kolawa

发明人： Scott R. Summerfelt ,  Jason Reid ,  Marc Nicolet ,  Elzbieta Kolawa

IPC分类号： H01G4/33 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/92 ,  H01L21/28

CPC分类号： H01L28/60 ,  H01L28/55 ,  H01L28/75

摘要： A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), an noble-metal-insulator-alloy barrier layer (e.g. Pd-Si-N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the noble-metal-insulator-alloy layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The noble-metal-insulator-alloy barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.

公开(公告)号：US20120225499A1

公开(公告)日：2012-09-06

申请号：US13468936

申请日：2012-05-10

申请人： Jean Pierre Nozieres ,  Jason Reid

发明人： Jean Pierre Nozieres ,  Jason Reid

IPC分类号： H01L21/8246

CPC分类号： H01L43/02 ,  G11C11/16 ,  H01L21/00 ,  H01L27/00 ,  H01L43/12

摘要： Disclosed herein is a method of forming electronic device having thin-film components by using trenches. One or more of thin-film components is formed by depositing a thin-film in the trench followed by processing the deposited thin-film to have the desired thickness.

摘要翻译： 本文公开了通过使用沟槽形成具有薄膜部件的电子器件的方法。 通过在沟槽中沉积薄膜而形成薄膜成分中的一种或多种，​​然后将沉积的薄膜加工成具有所需的厚度。