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公开(公告)号：US20170054054A1
公开(公告)日：2017-02-23
申请号：US15307815
申请日：2015-05-22
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Adam Bauer , Wolfgang Mönch , David Racz , Michael Wittmann , Dominik Schulten , Andreas Löffler
CPC classification number: H01L33/06 , G02F1/133524 , G02F1/133603 , H01L25/0753 , H01L25/0756 , H01L33/08 , H01L33/30 , H01L33/32 , H01L33/486 , H01L33/502 , H01L33/504 , H01L33/56 , H01L33/58 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2924/181 , H01L2933/0091 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.
Abstract translation: 公开了半导体部件和照明装置。 在一个实施例中，半导体部件包括被配置为产生具有第一峰值波长的主辐射和布置在半导体芯片上的辐射转换元件的半导体芯片。 辐射转换元件包括量子结构，其将初级辐射至少部分地转换成具有第二峰值波长的次级辐射和对初级辐射透射的衬底。
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公开(公告)号：US20150319814A1
公开(公告)日：2015-11-05
申请号：US14443989
申请日：2013-11-21
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Stefan Grötsch , Matthias Kiessling , Michael Wittmann , Stefan Gruber
IPC: H05B33/08
CPC classification number: H01L27/15 , H05B33/0803 , H05B33/0815 , H05B33/083
Abstract: An optoelectronic semiconductor component includes a first functional region having an active zone provided for generating radiation or for receiving radiation, and a second functional region, which is suitable for contributing to the driving of the first functional region. The first functional region and the second functional region are integrated on the same carrier substrate.
Abstract translation: 光电子半导体部件包括具有用于产生辐射或用于接收辐射的活动区域的第一功能区域和适于有助于驱动第一功能区域的第二功能区域。 第一功能区域和第二功能区域集成在相同的载体基板上。
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公开(公告)号：US10582585B2
公开(公告)日：2020-03-03
申请号：US16256879
申请日：2019-01-24
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Peter Brick , Stefan Grötsch , Stephan Pawlik , Michael Wittmann , Uli Hiller
Abstract: A radiation emitting device is disclosed. In an embodiment a radiation emitting device includes a pixelated optoelectronic semiconductor chip configured to emit a first radiation having a first peak wavelength, a conversion element or color control medium configured to convert at least a portion of the first radiation into a second radiation having a second peak wavelength and a color control element including a semiconductor diode configured to absorb a portion of the first and/or second radiation, wherein devise is configured to emit radiation of a first color temperature composed mainly of the first and second radiations when a reverse voltage is applied to the semiconductor diode and to emit radiation of a second color temperature composed mainly of the first and second radiations and a third radiation with a third peak wavelength generated by the absorbed first and/or second radiation in the semiconductor diode when a forward voltage is applied to the semiconductor diode.
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公开(公告)号：US20190230763A1
公开(公告)日：2019-07-25
申请号：US16256879
申请日：2019-01-24
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Peter Brick , Stefan Grötsch , Stephan Pawlik , Michael Wittmann , Uli Hiller
Abstract: A radiation emitting device is disclosed. In an embodiment a radiation emitting device includes a pixelated optoelectronic semiconductor chip configured to emit a first radiation having a first peak wavelength, a conversion element or color control medium configured to convert at least a portion of the first radiation into a second radiation having a second peak wavelength and a color control element including a semiconductor diode configured to absorb a portion of the first and/or second radiation, wherein devise is configured to emit radiation of a first color temperature composed mainly of the first and second radiations when a reverse voltage is applied to the semiconductor diode and to emit radiation of a second color temperature composed mainly of the first and second radiations and a third radiation with a third peak wavelength generated by the absorbed first and/or second radiation in the semiconductor diode when a forward voltage is applied to the semiconductor diode.
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公开(公告)号：US09871075B2
公开(公告)日：2018-01-16
申请号：US14443989
申请日：2013-11-21
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Stefan Grötsch , Matthias Kiessling , Michael Wittmann , Stefan Gruber
CPC classification number: H01L27/15 , H05B33/0803 , H05B33/0815 , H05B33/083
Abstract: An optoelectronic semiconductor component includes a first functional region having an active zone provided for generating radiation or for receiving radiation, and a second functional region, which is suitable for contributing to the driving of the first functional region. The first functional region and the second functional region are integrated on the same carrier substrate.
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Patent Agency Ranking
公开(公告)号：US09741910B1
公开(公告)日：2017-08-22
申请号：US15119503
申请日：2015-02-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Luca Haiberger , Michael Wittmann
CPC classification number: H01L33/56 , H01L33/465 , H01L33/48 , H01L33/483 , H01L33/486 , H01L33/50 , H01L33/501 , H01L33/502 , H01L33/504 , H01L33/507 , H01L33/508 , H01L33/54 , H01L2224/48091 , H01L2933/0091 , H01L2924/00014
Abstract: An optoelectronic component includes a housing having a cavity in which an optoelectronic semiconductor chip having an emission face that emits light rays and a transparent potting material are arranged, wherein the cavity includes at least one side wall at least partly reflecting light rays incident on the side wall and reflectivity of which decreases as an operating period of the component increases, conversion particles are embedded into the potting material, which conversion particles convert light rays having a first wavelength incident on the conversion particles into light rays having a second wavelength, and scattering particles are embedded into the potting material, which scattering particles scatter light rays incident on the scattering particles and the scattering capability of which scattering particles increases as the operating period increases.
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公开(公告)号：US20160218253A1
公开(公告)日：2016-07-28
申请号：US15090028
申请日：2016-04-04
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Michael Wittmann
IPC: H01L33/50 , H01L33/62 , H01L33/56 , H01L25/075 , H01L33/48
CPC classification number: H01L33/502 , H01L25/0753 , H01L33/486 , H01L33/50 , H01L33/54 , H01L33/56 , H01L33/62 , H01L2224/48097 , H01L2933/0041 , H01L2933/005 , H01L2933/0066
Abstract: A radiation-emitting semiconductor device includes a housing body having a chip mounting area, a chip connection region, a radiation-emitting semiconductor chip, and a light-absorbing material, wherein the radiation-emitting semiconductor chip is fixed to the chip connection region, the chip connection region is covered with the light-absorbing material at selected locations at which the chip connection region is not covered by the radiation-emitting semiconductor chip, the radiation-emitting semiconductor chip is free of the light-absorbing material in selected locations, the housing body has a cavity in which the at least one radiation-emitting semiconductor chip is arranged, the chip mounting area is a surface of the housing body which abuts the cavity, and the chip mounting area is free of the light-absorbing material in selected locations remote from the chip connection region.
Abstract translation: 辐射发射半导体器件包括具有芯片安装区域的壳体主体，芯片连接区域，辐射发射半导体芯片和光吸收材料，其中发射半导体芯片固定到芯片连接区域， 芯片连接区域在芯片连接区域未被辐射发射半导体芯片覆盖的选定位置处被光吸收材料覆盖，发光半导体芯片在选定位置没有光吸收材料， 壳体具有其中布置有至少一个辐射发射半导体芯片的空腔，芯片安装区域是与壳体接合的表面，并且芯片安装区域没有光吸收材料 所选位置远离芯片连接区域。
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公开(公告)号：US20250096206A1
公开(公告)日：2025-03-20
申请号：US18970720
申请日：2024-12-05
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Michael BRANDL , Andreas Dobner , Matthias Goldbach , Sebastian Wittmann , Uli Hiller , Markus Klein , Thomas Schwarz , Andreas Waldschik , Michael Wittmann , Matthias Bruckschloegl , Stefan Groetsch , Rainer Huber , Peter Brick , Ludwig Hofbauer
IPC: H01L25/075 , B60K35/00 , H01L33/60
Abstract: An optoelectronic device, in particular an at least partially transparent pane for example of a vehicle, comprises a first layer, in particular an intermediate layer arranged between a cover layer and a carrier layer, at least one electronic or optoelectronic component, which is at least partially or completely embedded in the first layer and at least one structured conductor layer. A first portion of the conductor layer is arranged on an upper surface of the first layer and a second portion of the conductor layer is arranged on a top surface of the electronic or optoelectronic component and is in contact with an electric contact of the electronic or optoelectronic component. The electric contact, in particular a contact pad, is arranged on the top surface.
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公开(公告)号：US12040317B2
公开(公告)日：2024-07-16
申请号：US17541761
申请日：2021-12-03
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Michael Brandl , Andreas Dobner , Matthias Goldbach , Sebastian Wittmann , Uli Hiller , Markus Klein , Thomas Schwarz , Andreas Waldschik , Michael Wittmann , Matthias Bruckschloegl , Stefan Groetsch , Rainer Huber , Peter Brick , Ludwig Hofbauer
IPC: H04W72/20 , H01L25/075 , H01L33/46 , H01L33/62 , H01L33/64 , H04W72/51 , B60J3/00 , B60K35/00 , B60K35/60 , B62J50/22
CPC classification number: H01L25/0756 , H01L33/46 , H01L33/62 , H01L33/641 , H04W72/20 , H04W72/51 , B60J3/00 , B60K35/00 , B60K35/60 , B60K2370/785 , B62J50/22
Abstract: An optoelectronic device comprises a plurality of optoelectronic light sources being arranged on a first layer, in particular an intermediate layer being arranged between a cover layer and a carrier layer. The first layer comprises or consists of an at least partially transparent material and each optoelectronic light source of the plurality of optoelectronic light sources comprises an individual light converter for converting light emitted by the associated light source into converted light. The light converter of each optoelectronic light source is arranged on the first layer and/or the associated optoelectronic light source.
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公开(公告)号：US10553748B2
公开(公告)日：2020-02-04
申请号：US15307815
申请日：2015-05-22
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Adam Bauer , Wolfgang Mönch , David Racz , Michael Wittmann , Dominik Schulten , Andreas Löffler
IPC: H01L33/06 , H01L33/50 , H01L33/62 , H01L33/30 , H01L33/32 , H01L33/56 , H01L33/58 , H01L33/60 , G02F1/1335
Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.
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