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    Semiconductor device and method of manufacturing the same
    14.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US09287367B2

    公开(公告)日：2016-03-15

    申请号：US14526427

    申请日：2014-10-28

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Woo Chul Kwak ,  Seung Kyu Choi ,  Chae Hon Kim ,  Jung Whan Jung ,  Yong Hyun Baek ,  Sam Seok Jang ,  Su Youn Hong ,  Mi Gyeong Jeong

    IPC: H01L29/06 ,  H01L29/20 ,  H01L29/15 ,  H01L29/201 ,  H01L29/205 ,  H01L33/04 ,  H01L33/02 ,  H01L33/22

    CPC classification number: H01L29/2003 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/0607 ,  H01L29/155 ,  H01L29/201 ,  H01L29/205 ,  H01L33/02 ,  H01L33/025 ,  H01L33/04 ,  H01L33/20 ,  H01L33/22

    Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device includes: a first conductive type semiconductor layer including a first lower conductive type semiconductor layer and a first upper conductive type semiconductor layer; a V-pit passing through at least one portion of the first upper conductive type semiconductor layer; a second conductive type semiconductor layer placed over the first conductive type semiconductor and filling the V-pit; and an active layer interposed between the first and second conductive type semiconductor layers with the V-pit passing through the active layer. The first upper conductive type semiconductor layer has a higher defect density than the first lower conductive type semiconductor layer and includes a V-pit generation layer comprising a starting point of the V-pit. The semiconductor device includes the V-pits having a large size and a high density to efficiently preventing damage to the semiconductor device due to electrostatic discharge.

    Abstract translation: 公开了半导体器件及其制造方法。 半导体器件包括：第一导电型半导体层，包括第一下导电型半导体层和第一上导电型半导体层; 通过所述第一上导电型半导体层的至少一部分的V凹坑; 放置在所述第一导电型半导体上并填充所述V坑的第二导电型半导体层; 以及插入在第一和第二导电类型半导体层之间的有源层，其中V坑穿过有源层。 第一上导电型半导体层具有比第一下导电型半导体层更高的缺陷密度，并且包括包含V坑的起点的V坑生成层。 半导体器件包括具有大尺寸和高密度的V型凹坑，以有效地防止由于静电放电对半导体器件的损坏。

    METHOD OF FABRICATING NONPOLAR GALLIUM NITRIDE-BASED SEMICONDUCTOR LAYER, NONPOLAR SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME
    16.
    发明申请
    METHOD OF FABRICATING NONPOLAR GALLIUM NITRIDE-BASED SEMICONDUCTOR LAYER, NONPOLAR SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME 审中-公开
    制造非绝缘氮化镓的半导体层的方法，非绝缘半导体器件及其制造方法

    公开(公告)号：US20150270435A1

    公开(公告)日：2015-09-24

    申请号：US14708044

    申请日：2015-05-08

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Seung Kyu Choi ,  Chae Hon Kim ,  Jung Whan Jung

    IPC: H01L33/00 ,  H01L33/04

    CPC classification number: H01L33/0075 ,  H01L33/0062 ,  H01L33/04 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01L2933/0025

    Abstract: A method of fabricating a nonpolar gallium nitride-based semiconductor layer is provided. The method is a method of fabricating a nonpolar gallium nitride layer using metal organic chemical vapor deposition, and includes disposing a gallium nitride substrate with an m-plane growth surface within a chamber, raising a substrate temperature to a GaN growth temperature by heating the substrate, and growing a gallium nitride layer on the gallium nitride substrate by supplying a Ga source gas, an N source gas, and an ambient gas into the chamber at the growth temperature. The supplied ambient gas contains N2 and does not contain H2.

    Abstract translation: 提供一种制造非极性氮化镓基半导体层的方法。 该方法是使用金属有机化学气相沉积制造非极性氮化镓层的方法，并且包括在室内设置具有m面生长表面的氮化镓衬底，通过加热衬底将衬底温度提高到GaN生长温度 并且通过在生长温度下将Ga源气体，N源气体和环境气体供应到所述室中，在氮化镓衬底上生长氮化镓层。 提供的环境气体含有N2，不含H2。

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