公开(公告)号：US09362449B2

公开(公告)日：2016-06-07

申请号：US14464179

申请日：2014-08-20

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chang Yeon Kim ,  Dae Sung Cho ,  Ki Bum Nam ,  Young Wug Kim ,  Jong Kyun You ,  Kenji Shimoyama ,  Takahide Joichi ,  Kaori Kurihara

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/32 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/20 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/387 ,  H01L33/44

Abstract: Disclosed herein are a high efficiency light emitting diode and a method of fabricating the same. The light emitting diode includes a semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer; and a reflecting layer disposed between the support substrate and the semiconductor stacked structure, wherein the semiconductor stacked structure includes a plurality of protrusions having a truncated cone shape and fine cones formed on top surfaces of the protrusions. By this configuration, light extraction efficiency of the semiconductor stacked structure having low dislocation density can be improved.

Abstract translation: 本文公开了一种高效率发光二极管及其制造方法。 发光二极管包括设置在支撑基板上并包括氮化镓基p型半导体层，氮化镓基有源层和氮化镓基n型半导体层的半导体堆叠结构; 以及设置在所述支撑基板和所述半导体堆叠结构之间的反射层，其中所述半导体堆叠结构包括形成在所述突起的顶表面上的具有截头圆锥形状的多个突起和细锥。 通过这种构造，可以提高具有低位错密度的半导体层叠结构的光提取效率。

公开(公告)号：US20140110729A1

公开(公告)日：2014-04-24

申请号：US14138917

申请日：2013-12-23

Applicant: Seoul Viosys Co., Ltd.

Inventor： Won Cheol Seo ,  Joon Hee Lee ,  Jong Kyun You ,  Chang Youn Kim ,  Jin Cheol Shin ,  Hwa Mok Kim ,  Jang Woo Lee ,  Yeo Jin Yoon ,  Jong Kyu Kim

IPC: H01L33/62

CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Abstract translation: 公开了一种发光器件及其制造方法。 发光器件包括衬底。 多个发光单元设置在基板的顶部上以彼此间隔开。 每个发光单元包括第一上半导体层，有源层和第二下半导体层。 反射金属层位于基板和发光单元之间。 防止反射金属层暴露于外部。

公开(公告)号：US10749074B2

公开(公告)日：2020-08-18

申请号：US16409603

申请日：2019-05-10

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Mi Hee Lee ,  Chang Yeon Kim ,  Ju Yong Park ,  Jong Kyun You ,  Joon Hee Lee

IPC: H01L27/32 ,  H01L33/20 ,  H01L33/32 ,  H01L33/10 ,  H01L33/38 ,  H01L33/40 ,  H01L33/46

Abstract: A light emitting diode includes: a first conductivity type semiconductor layer; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer; a first electrode including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.

公开(公告)号：US20180040767A1

公开(公告)日：2018-02-08

申请号：US15551575

申请日：2016-01-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Min Jang ,  Jong Kyun You ,  Da Hye Kim ,  Chae Hon Kim ,  Seon Min Bae ,  Jae Hee Lim

IPC: H01L33/10 ,  H01L33/22 ,  H01L33/38 ,  H01L33/32 ,  H01L33/40 ,  H01L33/16

CPC classification number: H01L33/10 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42

Abstract: Disclosed is a light-emitting device. The light-emitting device comprises: a light-emitting structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode which ohmically contacts the first conductive semiconductor layer; a second contact electrode which is disposed on the second conductive semiconductor layer; and an insulation layer which is disposed on the light-emitting structure and insulates the first contact electrode and the second contact electrode, wherein the light-emitting structure has a non-polar or semi-polar growth surface; the upper surface of the second conductive semiconductor layer comprises a non-polar or semi-polar surface; and the second contact electrode comprises a conductive oxide layer which ohmically contacts the second conductive semiconductor layer, and a reflective electrode layer disposed on the conductive oxide layer.

公开(公告)号：US09455378B2

公开(公告)日：2016-09-27

申请号：US14229713

申请日：2014-03-28

Applicant: Seoul Viosys Co., Ltd.

Inventor： Kyung Hee Ye ,  Chang Youn Kim ,  Jin Cheol Shin ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim

IPC: H01L33/00 ,  H01L33/46 ,  H01L33/20 ,  H01L33/42 ,  H01L33/24 ,  H01L33/22 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/46 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.

Abstract translation: 一种高效率发光二极管，包括：位于支撑基板上的半导体堆叠，包括p型化合物半导体层，有源层和n型化合物半导体层; 设置在分隔所述p型化合物半导体层和有源层的开口中的绝缘层; 设置在绝缘层和p型化合物半导体层上的透明电极层; 覆盖所述透明电极层的反射绝缘层，以将来自所述有源层的光反射离开所述支撑基板; 覆盖反射绝缘层的p电极; 并且在n型化合物半导体层的顶部上形成n电极。 p电极通过绝缘层与透明电极层电连接。

公开(公告)号：US09362458B2

公开(公告)日：2016-06-07

申请号：US14474982

申请日：2014-09-02

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ju Yong Park ,  Jong Kyun You ,  Chang Yeon Kim

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/32 ,  H01L33/38

CPC classification number: H01L33/405 ,  H01L33/32 ,  H01L33/387 ,  H01L2933/0016

Abstract: A light emitting diode and a method of fabricating the same, the light emitting diode including: a gallium nitride-based compound semiconductor layer; a first metal layer including Mg and disposed in the form of islands that are in ohmic contact with the gallium nitride-based compound semiconductor layer; a second metal layer including Ni, covering the first metal layer, and contacting the gallium nitride-based compound semiconductor layer between the islands of the first metal layer; and a reflective metal layer covering the second metal layer.

Abstract translation: 一种发光二极管及其制造方法，所述发光二极管包括：氮化镓系化合物半导体层; 包括Mg的第一金属层，并且以与氮化镓基化合物半导体层欧姆接触的岛的形式设置; 包含Ni的第二金属层，覆盖所述第一金属层，并且使所述氮化镓基化合物半导体层与所述第一金属层的岛之间接触; 以及覆盖第二金属层的反射金属层。

公开(公告)号：US09306120B2

公开(公告)日：2016-04-05

申请号：US14085092

申请日：2013-11-20

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Da Hye Kim ,  Jong Kyun You ,  Chang Yeon Kim ,  Tae Hyuk Im

IPC: H01L33/02 ,  H01L33/22 ,  H01L33/00 ,  H01L33/20 ,  H01L33/44

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/44 ,  H01L2933/0025

Abstract: A method of fabricating method light-emitting diode according to an exemplary embodiment of the present invention includes forming a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a first substrate, forming a second substrate on the second conductivity-type semiconductor layer, separating the first substrate from the first conductivity-type semiconductor layer, forming a mask pattern including a plurality of openings on the first conductivity-type semiconductor layer exposed after separating the substrate, etching the first conductivity-type semiconductor layer having the mask pattern disposed thereon to form a plurality of recesses separated from each other, removing the mask pattern, and etching a surface of the first conductivity-type semiconductor layer to form a sub-micro texture.

Abstract translation: 根据本发明的示例性实施例的制造方法的发光二极管的方法包括在第一衬底上形成第一导电类型半导体层，有源层和第二导电类型半导体层，形成第二衬底 所述第二导电型半导体层将所述第一基板与所述第一导电型半导体层分离，在分离所述基板之后在所述第一导电型半导体层上形成包括多个开口的掩模图案，蚀刻所述第一导电型 具有设置在其上的掩模图案的半导体层以形成彼此分离的多个凹槽，去除掩模图案，以及蚀刻第一导电型半导体层的表面以形成亚微观纹理。

公开(公告)号：US20140138729A1

公开(公告)日：2014-05-22

申请号：US14085092

申请日：2013-11-20

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Da Hye KIM ,  Jong Kyun You ,  Chang Yeon Kim ,  Tae Hyuk Im

IPC: H01L33/22 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/44 ,  H01L2933/0025

Abstract: A method of fabricating method light-emitting diode according to an exemplary embodiment of the present invention includes forming a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a first substrate, forming a second substrate on the second conductivity-type semiconductor layer, separating the first substrate from the first conductivity-type semiconductor layer, forming a mask pattern including a plurality of openings on the first conductivity-type semiconductor layer exposed after separating the substrate, etching the first conductivity-type semiconductor layer having the mask pattern disposed thereon to form a plurality of recesses separated from each other, removing the mask pattern, and etching a surface of the first conductivity-type semiconductor layer to form a sub-micro texture.

Abstract translation: 根据本发明的示例性实施例的制造方法的发光二极管的方法包括在第一衬底上形成第一导电类型半导体层，有源层和第二导电类型半导体层，形成第二衬底 所述第二导电型半导体层将所述第一基板与所述第一导电型半导体层分离，在分离所述基板之后在所述第一导电型半导体层上形成包括多个开口的掩模图案，蚀刻所述第一导电型 具有设置在其上的掩模图案的半导体层，以形成彼此分离的多个凹槽，去除掩模图案，以及蚀刻第一导电型半导体层的表面以形成亚微观纹理。