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11.发明申请公开(公告)号：US20160013364A1
公开(公告)日：2016-01-14
申请号：US14607920
申请日：2015-01-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Ki Hyung LEE , Wan Tae LIM , Geun Woo KO , Min Wook CHOI
CPC classification number: H01L33/24 , F21K9/232 , F21S41/147 , F21S41/192 , F21Y2101/00 , F21Y2115/10 , H01L33/08 , H01L33/18 , H01L33/22 , H01L2224/16245 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
Abstract: A method of manufacturing a nanostructure semiconductor light emitting device may includes preparing a mask layer by sequentially forming a first insulating layer and a second insulating layer on a base layer configured of a first conductivity-type semiconductor, forming a plurality of openings penetrating the mask layer, growing a plurality of nanorods in the plurality of openings, removing the second insulating layer, preparing a plurality of nanocores by re-growing the plurality of nanorods, and forming nanoscale light emitting structures by sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores. The plurality of openings may respectively include a mold region located in the second insulating layer, and the mold region includes at least one curved portion of which an inclination of a side surface varies according to proximity to the first insulating layer.
Abstract translation: 制造纳米结构半导体发光器件的方法可以包括通过在由第一导电型半导体构成的基底层上依次形成第一绝缘层和第二绝缘层来制备掩模层，形成穿过掩模层的多个开口 在所述多个开口中生长多个纳米棒，去除所述第二绝缘层，通过重新生长所述多个纳米棒来制备多个纳米孔，以及通过依次生长活性层和第二导电类型形成纳米尺度的发光结构 半导体层在多个纳米孔的表面上。 多个开口可以分别包括位于第二绝缘层中的模具区域，并且模具区域包括至少一个弯曲部分，其侧表面的倾斜度根据与第一绝缘层的接近度而变化。
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公开(公告)号：US20150243853A1
公开(公告)日：2015-08-27
申请号：US14516548
申请日：2014-10-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Yong Min KWON , Kyoung Jun KIM
CPC classification number: H01L33/486 , H01L33/0079 , H01L33/0095 , H01L33/16 , H01L33/62 , H01L2224/16225 , H01L2224/94 , H01L2933/0033 , H01L2933/0066
Abstract: A method of manufacturing a light emitting diode (LED) package may include forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer on a growth substrate, forming first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, bonding a first surface of a light transmissive substrate opposite to a second surface thereof to the light emitting structure, identifying positions of the first and second electrodes that are seen through the second surface of the light transmissive substrate, forming one or more through holes in the light transmissive substrate to correspond to the first and second electrodes, and forming first and second via electrodes by filling the through holes with a conductive material.
Abstract translation: 制造发光二极管（LED）封装的方法可以包括在生长衬底上形成具有第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构，形成连接的第一和第二电极 分别将第一和第二导电型半导体层与其第二表面相反的第一表面与发光结构接合，识别通过第二表面的第二表面的第一和第二电极的位置 所述透光基板在所述透光基板中形成一个或多个通孔，以对应于所述第一和第二电极，以及通过用导电材料填充所述通孔来形成第一和第二通孔电极。
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公开(公告)号：US20140217357A1
公开(公告)日：2014-08-07
申请号：US14161861
申请日：2014-01-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung Ho YOO , Han Kyu SEONG , Nam Goo CHA , Tae Woong KIM
IPC: H01L33/06
CPC classification number: H01L33/24 , H01L31/0232 , H01L2224/48137 , H01L2924/181 , H01L2924/1815 , H01L2924/00012
Abstract: A semiconductor light emitting device including a first conductive semiconductor base layer on a substrate; an insulating layer on the first conductive semiconductor base layer, the insulating layer including a plurality of openings through which the first conductive semiconductor base layer is exposed; and a plurality of nanoscale light emitting structures on the first conductive semiconductor base layer, the nanoscale light emitting structures respectively including a first conductive semiconductor core on an exposed region of the first conductive semiconductor base layer, and an active layer, and a second conductive semiconductor layer sequentially disposed on a surface of the first conductive semiconductor core, wherein a lower edge of a side portion of each nanoscale light emitting structure is on an inner side wall of the opening in the insulating layer.
Abstract translation: 一种半导体发光器件，包括在基板上的第一导电半导体基底层; 在所述第一导电半导体基底层上的绝缘层，所述绝缘层包括暴露所述第一导电半导体基底层的多个开口; 以及在所述第一导电半导体基底层上的多个纳米级发光结构，所述纳米级发光结构分别包括在所述第一导电半导体基底层的暴露区域上的第一导电半导体芯和有源层，以及第二导电半导体 层，其顺序地设置在第一导电半导体芯的表面上，其中每个纳米级发光结构的侧部的下边缘在绝缘层中的开口的内侧壁上。
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公开(公告)号：US20190157515A1
公开(公告)日：2019-05-23
申请号：US16255466
申请日：2019-01-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Il KIM , Hyong Sik WON , Wan Tae LIM , Nam Goo CHA
IPC: H01L33/50 , H01L33/32 , H01L25/075 , H01L33/44 , H01L33/08
Abstract: A light emitting device package may include: a light emitting structure including a plurality of light emitting regions configured to emit light, respectively; a plurality of light adjusting layers formed above the light emitting regions to change characteristics of the light emitted from the light emitting regions, respectively; a plurality of electrodes configured to control the light emitting regions to emit the light, respectively; and an isolation insulating layer disposed between the light emitting regions to insulate the light emitting regions from one another, the isolation insulating layer forming a continuous structure with respect to the light emitting regions.
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15.发明申请公开(公告)号：US20190103438A1
公开(公告)日：2019-04-04
申请号：US15984508
申请日：2018-05-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Nam Goo CHA , Yong Il KIM , Young Soo PARK
IPC: H01L27/15
CPC classification number: H01L27/156 , H01L25/0655 , H01L25/0753 , H01L33/0012 , H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/50 , H01L33/507 , H01L33/52 , H01L33/62 , H01L2933/0041 , H01L2933/005 , H01L2933/0066
Abstract: In some examples, a semiconductor device may comprise a semiconductor chip including a plurality of pixels, each pixel formed of a plurality of sub-pixels, such as a red sub-pixel, green sub-pixel and blue sub-pixel. Each sub-pixel may comprise a light emitting diode. A first signal line may connect to signal terminals of a first group sub-pixels (e.g., arranged in the same row), and a second signal line may connect to common terminals of a second group of sub-pixels (e.g., arranged in the same column). The number of chip pads may thus be reduced to provide increased design flexibility in location and/or allowing an increase in chip pad size. In some examples, a light transmissive material may be formed in openings of a semiconductor growth substrate on which light emitting cells of the sub-pixels were grown. The light transmissive material of some of the sub-pixels may comprise a wavelength conversion material and/or filter. Exemplary display panels and methods of manufacturing semiconductor devices and display panels are also disclosed.
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Patent Agency Ranking
公开(公告)号：US20170288093A1
公开(公告)日：2017-10-05
申请号：US15389808
申请日：2016-12-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Yong Il KIM , Young Soo PARK , Sung Hyun SIM , Hanul YOO
CPC classification number: H01L33/08 , G09G3/2003 , G09G3/32 , H01L25/0756 , H01L33/382 , H01L33/46 , H01L33/504 , H01L33/58 , H01L33/62 , H01L2224/16145
Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.
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公开(公告)号：US20150102365A1
公开(公告)日：2015-04-16
申请号：US14338174
申请日：2014-07-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Hyun Seong KUM , Ju Bin SEO , Dong Hoon LEE
IPC: H01L27/15
CPC classification number: H01L33/24 , H01L33/08 , H01L33/18 , H01L33/385
Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer and a plurality of light emitting nanostructures. The base layer is formed of a first conductivity type semiconductor. The insulating layer is disposed on the base layer and has a plurality of openings through which regions of the base layer are exposed. Each of the light emitting nanostructures is disposed on the exposed regions of the base layer and includes nanocore formed of a first conductivity type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on side surfaces of the nanocore. Upper surfaces of the light emitting nanostructures are non-planar and contain portions free of the second conductivity-type semiconductor layer in order to prevent light emissions during device driving.
Abstract translation: 纳米结构半导体发光器件包括基底层，绝缘层和多个发光纳米结构。 基层由第一导电型半导体形成。 绝缘层设置在基底层上并具有多个开口，基底层的区域暴露在该开口中。 每个发光纳米结构设置在基底层的暴露区域上，并且包括由第一导电型半导体形成的纳米孔，以及顺序地设置在纳米孔的侧表面上的有源层和第二导电类型半导体层。 发光纳米结构的上表面是非平面的，并且包含不含第二导电型半导体层的部分，以便防止器件驱动期间的光发射。
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18.发明申请NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权纳米结构半导体发光器件及其制造方法公开(公告)号：US20140209859A1
公开(公告)日：2014-07-31
申请号：US14165112
申请日：2014-01-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Geon Wook YOO , Han Kyu SEONG
CPC classification number: H01L33/20 , H01L33/005 , H01L33/08 , H01L33/18 , H01L33/24
Abstract: A method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity type semiconductor. A mask including an etch stop layer is formed on the base layer. A plurality of openings are formed in the mask so as to expose regions of. A plurality of nanocores are formed by growing the first conductivity type semiconductor on the exposed regions of the base layer to fill the plurality of openings. The mask is partially removed by using the etch stop layer to expose side portions of the plurality of nanocores. An active layer and a second conductivity type semiconductor layer are sequentially grown on surfaces of the plurality of nanocores.
Abstract translation: 一种制造纳米结构半导体发光器件的方法，包括提供由第一导电型半导体形成的基极层。 在基底层上形成包括蚀刻停止层的掩模。 在掩模中形成多个开口以暴露其中的区域。 通过在基底层的曝光区域上生长第一导电型半导体以填充多个开口来形成多个纳米孔。 通过使用蚀刻停止层来部分地去除掩模以暴露多个纳米孔的侧面部分。 在多个纳米孔的表面上依次生长有源层和第二导电型半导体层。
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公开(公告)号：US20140203240A1
公开(公告)日：2014-07-24
申请号：US14152465
申请日：2014-01-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung Wook HWANG , Han Kyu SEONG , Nam Goo CHA
CPC classification number: H01L33/24 , H01L33/005 , H01L33/08 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014
Abstract: A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer.
Abstract translation: 一种半导体发光器件，包括：衬底; 由第一导电型半导体制成的基底层，设置在基板上; 多个纳米尺度的发光单元，其设置在所述基底层的上表面的区域中，并且包括从所述基底层的上表面突出的第一导电型纳米半导体层，设置在所述第一导电性的纳米活性层 型纳米半导体层和设置在纳米活性层上的第二导电型纳米半导体层; 以及设置在基层的上表面的不同区域并具有层叠有源层的发光层叠体。
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20.发明申请公开(公告)号：US20200258939A1
公开(公告)日：2020-08-13
申请号：US16864954
申请日：2020-05-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Nam Goo CHA , Yong Il KIM , Young Soo PARK
Abstract: In some examples, a semiconductor device may comprise a semiconductor chip including a plurality of pixels, each pixel formed of a plurality of sub-pixels, such as a red sub-pixel, green sub-pixel and blue sub-pixel. Each sub-pixel may comprise a light emitting diode. A first signal line may connect to signal terminals of a first group sub-pixels (e.g., arranged in the same row), and a second signal line may connect to common terminals of a second group of sub-pixels (e.g., arranged in the same column). The number of chip pads may thus be reduced to provide increased design flexibility in location and/or allowing an increase in chip pad size. In some examples, a light transmissive material may be formed in openings of a semiconductor growth substrate on which light emitting cells of the sub-pixels were grown. The light transmissive material of some of the sub-pixels may comprise a wavelength conversion material and/or filter. Exemplary display panels and methods of manufacturing semiconductor devices and display panels are also disclosed.
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