公开(公告)号：US10756237B2

公开(公告)日：2020-08-25

申请号：US16571604

申请日：2019-09-16

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Daewoong Suh ,  Dae Sung Cho ,  Joon Sup Lee ,  Kyu Ho Lee ,  Chi Hyun In

IPC: H01L33/48 ,  H01L33/40 ,  H01L33/22 ,  H01L33/38 ,  H01L33/20 ,  H01L33/00 ,  H01L33/14 ,  H01L33/32 ,  H01L33/44 ,  H01L33/12 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L33/08

Abstract: A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer.

公开(公告)号：US10319884B2

公开(公告)日：2019-06-11

申请号：US15132887

申请日：2016-04-19

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Daewoong Suh ,  Dae Sung Cho ,  Joon Sup Lee ,  Kyu Ho Lee ,  Chi Hyun In

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/22 ,  H01L33/20 ,  H01L33/38 ,  H01L33/14 ,  H01L33/32 ,  H01L33/44 ,  H01L33/12 ,  H01L33/42 ,  H01L33/46 ,  H01L33/48 ,  H01L33/62 ,  H01L33/08

Abstract: A light emitting diode includes a first conductive type semiconductor layer and a mesa disposed on the first conductive type semiconductor layer. The mesa includes an active layer and a second conductive type semiconductor layer. A reflective electrode is disposed on the mesa to be in ohmic-contact with the second conductive type semiconductor layer. A current spreading layer is disposed on the mesa and the reflective electrode. A first portion of the current spreading layer is in ohmic-contact with an upper surface of an end portion of the first conductive type semiconductor layer. A lower insulating layer is disposed between the mesa and the current spreading layer, and the reflective electrode and the current spreading layer. An upper insulating layer covers the current spreading layer and includes a first hole exposing a second portion of the current spreading layer that is disposed on an upper portion of the mesa.

公开(公告)号：US09634193B2

公开(公告)日：2017-04-25

申请号：US14671491

申请日：2015-03-27

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Daewoong Suh ,  Dae Sung Cho ,  Joon Sup Lee ,  Kyu Ho Lee ,  Chi Hyun In

IPC: H01L33/12 ,  H01L33/40 ,  H01L33/22 ,  H01L33/20 ,  H01L33/38 ,  H01L33/00 ,  H01L33/14 ,  H01L33/32 ,  H01L33/44 ,  H01L33/42 ,  H01L33/46 ,  H01L33/48 ,  H01L33/62 ,  H01L33/08

CPC classification number: H01L33/405 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/12 ,  H01L33/14 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058

Abstract: A light-emitting diode including a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer and having a conductivity type different than that of the first semiconductor layer, and a reflective pattern disposed on the second semiconductor layer and configured to reflect light emitted from the active layer, the reflective pattern having heterogeneous metal layers and configured to absorb stress caused by differences in coefficient of thermal expansion between the heterogeneous metal layers.

公开(公告)号：US09018669B2

公开(公告)日：2015-04-28

申请号：US14231043

申请日：2014-03-31

Applicant: Seoul Viosys Co., Ltd.

Inventor： Won Cheol Seo ,  Dae Sung Cho ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

IPC: H01L33/00 ,  H01L33/42 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L33/08 ,  H01L33/20

CPC classification number: H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

Abstract: A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

Abstract translation: 衬底，布置在衬底上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层和第二导电类型半导体层之间的有源层，第一导电类型半导体层 电连接到第一导电型半导体层的电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极焊盘之间的绝缘层，以及至少一个电连接 到所述第二电极焊盘，所述至少一个上延伸部电连接到所述第二导电型半导体层。

公开(公告)号：US12107081B2

公开(公告)日：2024-10-01

申请号：US18077188

申请日：2022-12-07

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon Chae ,  Chang Yeon Kim ,  Seong Gyu Jang ,  Ho Joon Lee ,  Jong Min Jang ,  Dae Sung Cho

IPC: H01L25/075 ,  H01L33/08 ,  H01L33/38 ,  H01L33/50

CPC classification number: H01L25/0753 ,  H01L33/08 ,  H01L33/38 ,  H01L33/50

Abstract: A display apparatus including a substrate, and pixel regions and at least one separation region between the pixel regions, each pixel region including a first LED stack, a second LED stack adjacent to the first LED stack, a third LED stack adjacent to the second LED stack and each having a side surface forming a first angle, a second angle, and a third angle with the substrate, respectively, electrode pads electrically connected to the first, second, and third LED stacks, and an insulation layer disposed on at least one of the first, second, and third LED stacks, in which the first LED stack is configured to emit light having a longer peak wavelength than that emitted from the second and third LED stacks, and the first angle is different from the second and third angles.

公开(公告)号：US11862616B2

公开(公告)日：2024-01-02

申请号：US17178897

申请日：2021-02-18

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chung Hoon Lee ,  Dae Sung Cho ,  So Ra Lee

IPC: H01L25/075 ,  H01L33/62 ,  H01L33/00 ,  H01L33/38 ,  H01L33/32 ,  H01L23/00

CPC classification number: H01L25/0756 ,  H01L25/0753 ,  H01L33/0093 ,  H01L33/382 ,  H01L33/62 ,  H01L24/32 ,  H01L33/32 ,  H01L2224/32145 ,  H01L2924/12041 ,  H01L2933/0016

Abstract: A light emitting device includes a short wavelength light emitting portion, a long wavelength light emitting portion, and a coupling layer combining the short wavelength emitting portion and the long wavelength light emitting portion. Each of the short wavelength light emitting portion and the long wavelength light emitting portion includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The active layer of the long wavelength light emitting portion contains more Indium (In) than the active layer of the short wavelength light emitting portion, and the short wavelength light emitting portion emits light of a shorter wavelength than that of light emitted from the long wavelength light emitting portion.

公开(公告)号：US11527513B2

公开(公告)日：2022-12-13

申请号：US16673114

申请日：2019-11-04

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon Chae ,  Chang Yeon Kim ,  Seong Gyu Jang ,  Ho Joon Lee ,  Jong Min Jang ,  Dae Sung Cho

IPC: H01L25/075 ,  H01L33/50 ,  H01L33/08 ,  H01L33/38

Abstract: A light emitting device for a display including a plurality of pixel regions defined between at least one separation region disposed between the pixel regions, and a barrier disposed in the separation region, in which each of the pixel regions includes a first LED stack, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, and electrode pads electrically connected to the first, second, and third LED stacks, the electrode pads comprising a common electrode pad, a first electrode pad, a second electrode pad, and a third electrode pad, the common electrode pad is connected to the first, second, and third LED stacks, the first, second, and third electrode pads are connected to the first, second, and third LED stacks, respectively, and the first, second, and third LED stacks are configured to be independently driven using the electrode pads.

公开(公告)号：US09793440B2

公开(公告)日：2017-10-17

申请号：US15200633

申请日：2016-07-01

Applicant: Seoul Viosys Co., Ltd.

Inventor： Won Cheol Seo ,  Dae Sung Cho ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/08 ,  H01L33/20 ,  H01L33/44 ,  H01L33/42 ,  H01L33/62 ,  H01L33/32

CPC classification number: H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

Abstract: A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

公开(公告)号：US20160233386A1

公开(公告)日：2016-08-11

申请号：US15132887

申请日：2016-04-19

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Daewoong Suh ,  Dae Sung Cho ,  Joon Sup Lee ,  Kyu Ho Lee ,  Chi Hyun In

IPC: H01L33/40 ,  H01L33/46 ,  H01L33/42 ,  H01L33/20 ,  H01L33/32 ,  H01L33/12

CPC classification number: H01L33/405 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/12 ,  H01L33/14 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058

Abstract: A light emitting diode includes a first conductive type semiconductor layer and a mesa disposed on the first conductive type semiconductor layer. The mesa includes an active layer and a second conductive type semiconductor layer. A reflective electrode is disposed on the mesa to be in ohmic-contact with the second conductive type semiconductor layer. A current spreading layer is disposed on the mesa and the reflective electrode. A first portion of the current spreading layer is in ohmic-contact with an upper surface of an end portion of the first conductive type semiconductor layer. A lower insulating layer is disposed between the mesa and the current spreading layer, and the reflective electrode and the current spreading layer. An upper insulating layer covers the current spreading layer and includes a first hole exposing a second portion of the current spreading layer that is disposed on an upper portion of the mesa.

Abstract translation: 发光二极管包括设置在第一导电类型半导体层上的第一导电类型半导体层和台面。 台面包括有源层和第二导电类型半导体层。 反射电极设置在台面上以与第二导电类型半导体层欧姆接触。 电流扩散层设置在台面和反射电极上。 电流扩散层的第一部分与第一导电类型半导体层的端部的上表面欧姆接触。 下部绝缘层设置在台面与电流扩散层之间，反射电极和电流扩展层之间。 上绝缘层覆盖电流扩展层，并且包括暴露设置在台面上部的电流扩展层的第二部分的第一孔。

公开(公告)号：US09209358B2

公开(公告)日：2015-12-08

申请号：US14365370

申请日：2012-12-12

Applicant: Seoul Viosys Co., Ltd.

Inventor： Won Cheol Seo ,  Dae Sung Cho ,  Chung Hoon Lee ,  Ki Bum Nam

IPC: H01L33/22 ,  H01L21/02 ,  H01L33/16 ,  H01L33/32 ,  H01L33/00 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46 ,  H01L2933/0016 ,  H01L2933/0058 ,  H01L2933/0091

Abstract: Disclosed are a semiconductor device and a method of fabricating the same. A light emitting diode (LED) includes a conductive substrate, and a gallium nitride (GaN)-based semiconductor stack positioned on the conductive substrate. The semiconductor stack includes an active layer that is a semi-polar semiconductor layer. Accordingly, it is possible to provide an LED having improved light emitting efficiency.

Abstract translation: 公开了一种半导体器件及其制造方法。 发光二极管（LED）包括导电衬底和位于导电衬底上的基于氮化镓（GaN）的半导体叠层。 半导体堆叠包括作为半极性半导体层的有源层。 因此，可以提供具有改善的发光效率的LED。