公开(公告)号：US06858877B2

公开(公告)日：2005-02-22

申请号：US10352256

申请日：2003-01-28

申请人： Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Ayumu Tsujimura ,  Nobuyuki Otsuka

发明人： Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Ayumu Tsujimura ,  Nobuyuki Otsuka

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/34333

摘要： A facet-forming layer made of nitride semiconductor containing at least aluminum is formed on a substrate made of gallium nitride (GaN). A facet surface inclined with respect to a C-surface is formed on the surface of the facet-forming layer, and a selective growth layer laterally grows from the inclined facet surface. As a result, the selective growth layer can substantially lattice-match an n-type cladding layer made of n-type AlGaN and grown on the selective growth layer. For example, a laser structure without cracks being generated can be obtained by crystal growth.

摘要翻译： 在由氮化镓（GaN）制成的基板上形成由至少含有铝的氮化物半导体构成的面形成层。 在小面形成层的表面上形成有相对于C面倾斜的面面，并且从倾斜面面侧向生长选择性生长层。 结果，选择生长层可以使由n型AlGaN制成的n型包覆层基本上晶格匹配并在选择性生长层上生长。 例如，可以通过晶体生长获得没有产生裂纹的激光结构。

公开(公告)号：US4578048A

公开(公告)日：1986-03-25

申请号：US236914

申请日：1981-07-06

申请人： Seiichi Hirai ,  Akira Nishizawa ,  Nobuyuki Otsuka

发明人： Seiichi Hirai ,  Akira Nishizawa ,  Nobuyuki Otsuka

IPC分类号： G01N27/00 ,  F16D3/20 ,  F16D3/205 ,  G01N1/22 ,  G01N25/64 ,  G01N27/12 ,  G01N33/00

CPC分类号： F16D3/2055 ,  F16D2003/2026 ,  Y10S464/905

摘要： A constant velocity universal joint of the type having rollers carried by radial trunnions of an inner rotary member and which are received in axial grooves in an outer rotary member, including abutment members which engage abutment surfaces of the grooves and which prevent locking engagement of the rollers with both of the opposed walls of the axial grooves.

摘要翻译： 一种等速万向接头，其具有由内部旋转构件的径向轴颈承载并且被容纳在外部旋转构件中的轴向槽中的辊，其包括抵接构件，其抵接凹槽的邻接表面并且防止辊的锁定接合 与轴向凹槽的两个相对的壁。

公开(公告)号：US4331005A

公开(公告)日：1982-05-25

申请号：US116390

申请日：1980-01-29

申请人： Seiichi Hirai ,  Nobuyuki Otsuka

发明人： Seiichi Hirai ,  Nobuyuki Otsuka

IPC分类号： F16D3/20 ,  F16D3/2245 ,  F16D3/30

CPC分类号： F16D3/2245 ,  Y10S464/906

摘要： A constant velocity universal joint in which an outer member and an inner member are coupled through a cage member which has an outer spherical surface and an inner spherical surface. These spherical surfaces of the cage member are in contact with an inner spherical surface of the outer member and an outer spherical surface of the inner member, respectively. The cage member supports a number of balls in respective windows, and these balls are in engagement with respective pairs of longitudinally extending ball grooves formed in the inner spherical surface of the outer member and the outer spherical surface of the inner member. The bottom surfaces of the ball grooves extend substantially along respective circular arcs whose centers are located at equal distances on opposite sides of the center of the joint. The inner and outer spherical surfaces of the cage member are eccentric to one another and their centers are also located at equal distances on opposite sides of the center of the joint. The offset centers of the circular arcs and the offset centers of the spherical surfaces of the cage member are respectively coincident.

摘要翻译： 一种等速万向接头，其中外部构件和内部构件通过具有外球面和内球面的保持架构件联接。 保持架构件的这些球面分别与外部构件的内球面和内构件的外球面接触。 笼构件在各窗口中支撑多个球，并且这些球与形成在外构件的内球面和内构件的外球面的各对纵向延伸的球槽相配合。 球槽的底面基本上沿相应的圆弧延伸，圆弧的中心位于接头中心的相对侧上相等的距离处。 保持架构件的内外球面彼此偏心，并且其中心也位于接头中心相对两侧相等的距离处。 圆弧的偏移中心和保持架构件的球面的偏移中心分别一致。

公开(公告)号：US4180344A

公开(公告)日：1979-12-25

申请号：US951607

申请日：1978-10-13

申请人： Nobuyuki Otsuka ,  Seiichi Hirai ,  Motoshige Sogabe

发明人： Nobuyuki Otsuka ,  Seiichi Hirai ,  Motoshige Sogabe

IPC分类号： F16D3/227 ,  F16D3/00

CPC分类号： F16D3/227 ,  F16D2003/22303 ,  Y10S464/906 ,  Y10T403/32041

摘要： A joint of the type with an outer member having an inner cylindrical surface provided with an inner member having an outer diameter spherical surface and a cage member mounted on the inner member having an inner spherical surface and an outer diameter spherical surface which are eccentric with respect to each other. The cage member is provided with plural balls mounted in its respective windows, and the respective balls are in engagement with corresponding respective pairs of longitudinal directional guide grooves made in mutually facing surfaces of the outer member and the inner member. There is also provided an annular guide member mounted at its inner spherical surface and its outer cylindrical surface so as to be interposed between the cage member and the outer member.

摘要翻译： 该类型的外部构件的外部构件具有设置有具有外径球面的内部构件的外部构件和安装在具有内球面和外径球面的内部构件的保持构件的外部构件，所述内侧球面和外径球面相对于 对彼此。 笼构件设置有安装在其各自窗口中的多个球，并且各个球与在外部构件和内部构件的相互面对的表面中形成的相应的相应的一对纵向导向槽接合。 还设置有环形引导构件，其安装在其内球面和其外圆柱形表面上，以便插入在保持构件和外构件之间。

公开(公告)号：US08427090B2

公开(公告)日：2013-04-23

申请号：US13247197

申请日：2011-09-28

申请人： Nobuyuki Otsuka ,  Yuji Kudoh ,  Daisuke Ueda ,  Hitoshi Taya

发明人： Nobuyuki Otsuka ,  Yuji Kudoh ,  Daisuke Ueda ,  Hitoshi Taya

IPC分类号： H02K29/06

CPC分类号： H02K7/00 ,  H02K29/03 ,  H02K29/06 ,  H02K99/20 ,  H02P27/08

摘要： To develop a motor which can directly drive a brushless motor using a conventional circuit for an inverter without smoothing circuit and a circuit for a matrix converter that are for a brushed motor that operates on single-phase 100 V. Magnetic cores are attached to a motor shaft to increase inertial force. A magnetic-drive-pulsation motor which modulates torque is realized using force of attraction and repulsion generated by outer magnets and magnetic cores. The magnetic-drive-pulsation motor can be driven using the inverter and the matrix converter on single-phase 100 V power supply.

摘要翻译： 开发可以直接驱动无刷电动机的电动机，其使用用于无平滑电路的逆变器的常规电路和用于矩阵转换器的电路，其用于在单相100V上操作的有刷电动机。磁芯附接到电动机 轴增加惯性力。 使用由外磁体和磁芯产生的吸引力和排斥力来实现调节扭矩的磁驱动脉动电动机。 可以使用变频器和矩阵转换器在单相100 V电源上驱动磁驱动脉动电机。

公开(公告)号：US08384212B2

公开(公告)日：2013-02-26

申请号：US13173647

申请日：2011-06-30

申请人： Nobuyuki Otsuka ,  Manabu Yanagihara ,  Shuichi Nagai ,  Daisuke Ueda

发明人： Nobuyuki Otsuka ,  Manabu Yanagihara ,  Shuichi Nagai ,  Daisuke Ueda

IPC分类号： H01L23/10

CPC分类号： H01L23/427 ,  H01L21/50 ,  H01L21/54 ,  H01L23/045 ,  H01L23/10 ,  H01L2224/45124 ,  H01L2224/48 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： To provide a semiconductor equipment having high heat-transfer effect and breakdown voltage, and a method of manufacturing the same. The semiconductor equipment includes: a sealed container; a stem connected to the sealed container via a stem peripheral portion; and a semiconductor chip mounted on a top surface of the stem, inside the sealed container. The semiconductor chip is electrically connected to a lead provided to the stem, the stem peripheral portion, which is of a material that is different from the material of stem and the same as the material of the sealed container, is bonded along a periphery of the stem, and the sealed container is filled with a working fluid including at least one of ethanol, a perfluorocarbon, and a fluoroether.

摘要翻译： 提供具有高传热效应和击穿电压的半导体设备及其制造方法。 半导体设备包括：密封容器; 通过杆周边部连接到密封容器的杆; 以及安装在所述杆的顶表面上的所述密封容器内的半导体芯片。 半导体芯片电连接到设置在杆上的引线，与外壳材料不同的材料的茎周边部分沿密封容器的材料粘结， 并且密封容器中填充有包括乙醇，全氟化碳和氟醚中的至少一种的工作流体。

公开(公告)号：US07737037B2

公开(公告)日：2010-06-15

申请号：US12178151

申请日：2008-07-23

申请人： Akira Furuya ,  Nobuyuki Otsuka ,  Hiroshi Okamura ,  Shinichi Ogawa

发明人： Akira Furuya ,  Nobuyuki Otsuka ,  Hiroshi Okamura ,  Shinichi Ogawa

IPC分类号： H01L21/44

CPC分类号： H01L21/022 ,  H01L21/02123 ,  H01L21/02175 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76862 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the invention is to provide a semiconductor device which includes a barrier metal having high adhesiveness and diffusion barrier properties and a method of manufacturing the semiconductor device. The invention provides a semiconductor device manufacturing method including forming a first layer made of a material containing silicon on a base substance; forming a second layer containing metal and nitrogen on the first layer; and exposing the second layer to active species obtained from plasma in an atmosphere including reducing gas.

摘要翻译： 本发明的目的是提供一种包括具有高粘合性和扩散阻挡性的阻挡金属的半导体器件和制造半导体器件的方法。 本发明提供一种半导体器件制造方法，包括在基体上形成由含硅的材料制成的第一层; 在所述第一层上形成含有金属和氮的第二层; 并将第二层暴露于包括还原气体的气氛中从等离子体获得的活性物质。

公开(公告)号：US06586774B2

公开(公告)日：2003-07-01

申请号：US10021006

申请日：2001-12-19

申请人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

发明人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

IPC分类号： H01L2906

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

公开(公告)号：US6104738A

公开(公告)日：2000-08-15

申请号：US894763

申请日：1997-11-13

申请人： Masahiro Kitoh ,  Nobuyuki Otsuka ,  Masato Ishino ,  Yasushi Matsui ,  Yuichi Inaba

发明人： Masahiro Kitoh ,  Nobuyuki Otsuka ,  Masato Ishino ,  Yasushi Matsui ,  Yuichi Inaba

IPC分类号： H01S5/042 ,  H01S5/10 ,  H01S5/12 ,  H01S5/20 ,  H01S5/227 ,  H01S5/323 ,  H01S3/19 ,  H01S3/08

CPC分类号： H01S5/10 ,  H01S2301/18 ,  H01S5/0425 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/12 ,  H01S5/1206 ,  H01S5/1215 ,  H01S5/1218 ,  H01S5/1225 ,  H01S5/1228 ,  H01S5/20 ,  H01S5/2036 ,  H01S5/2275 ,  H01S5/32391

摘要： In a semiconductor laser device 100, an n-type InGaAsP light confinement layer 2, a multiple quantum well active layer 3, a p-type InGaAsP light confinement layer 4, and a p-type InP cladding layer 5 are formed on an n-type InP substrate 1 to be in a mesa structure extending in stripes along the cavity length direction. Moreover, regions on both sides of this striped mesa are buried with a p-type InP current blocking layer 6 and an n-type InP current blocking layer 7. Furthermore, a p-type InP burying layer 8 and a p-type InGaAsP contact layer 9 are formed thereon. The oscillation wavelength of the semiconductor laser device 100 is around 1.3 .mu.m. The stripe width of the active layer 3 is such that the width W1 at the front end face and the width W2 at the rear end face have a relationship of W1

摘要翻译： PCT No.PCT / JP96 / 03837第 371日期：1997年11月13日 102（e）1997年11月13日PCT PCT 1996年12月26日PCT公布。 出版物WO97 / 24787 日期1997年7月10日在半导体激光装置100中，n型InGaAsP光限制层2，多量子阱活性层3，p型InGaAsP光限制层4和p型InP包覆层5为 在n型InP衬底1上形成为沿着空腔长度方向以条纹延伸的台面结构。 此外，这种条状台面的两侧的区域用p型InP电流阻挡层6和n型InP电流阻挡层7埋设。此外，p型InP掩埋层8和p型InGaAsP接触 层9形成在其上。 半导体激光装置100的振荡波长约为1.3μm。 有源层3的条带宽度使得前端面处的宽度W1和后端面的宽度W2具有W1

公开(公告)号：US5856207A

公开(公告)日：1999-01-05

申请号：US667643

申请日：1996-06-20

申请人： Nobuyuki Otsuka ,  Masahiro Kitoh ,  Masato Ishino ,  Yasushi Matsui

发明人： Nobuyuki Otsuka ,  Masahiro Kitoh ,  Masato Ishino ,  Yasushi Matsui

IPC分类号： H01L29/15 ,  H01S5/22 ,  H01S5/227 ,  H01S5/343 ,  H01L21/20

CPC分类号： B82Y20/00 ,  H01L29/155 ,  H01S5/227 ,  H01S5/2205 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2275 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/3434 ,  Y10S148/095

摘要： The semiconductor laser of the invention includes: a semiconductor substrate of a first conductivity type; a stripe-shaped multilayer structure, formed on the semiconductor substrate, the stripe-shaped multilayer structure including an active layer; and a current blocking portion formed on the semiconductor substrate on both sides of the stripe-shaped multilayer structure, wherein the current blocking portion has a first current blocking layer of a second conductivity type, and a second current blocking layer of the first conductivity type formed on the first current blocking layer, the first current blocking layer includes a low-concentration region having a relatively low concentration of an impurity of the second conductivity type, and a high-concentration region having an impurity concentration which is higher than that of the low-concentration region, and the low-concentration region is provided at a position closer to the stripe-shaped multilayer structure than the high-concentration region.

摘要翻译： 本发明的半导体激光器包括：第一导电类型的半导体衬底; 形成在所述半导体衬底上的条形多层结构，所述条形多层结构包括有源层; 以及在所述条形多层结构的两侧形成在所述半导体衬底上的电流阻挡部分，其中所述电流阻挡部分具有第二导电类型的第一电流阻挡层和形成所述第一导电类型的第二电流阻挡层 在第一电流阻挡层上，第一电流阻挡层包括具有相对低浓度的第二导电类型的杂质的低浓度区域和具有高于低浓度杂质浓度的高浓度区域 浓度区域，并且低浓度区域设置在比高浓度区域更靠近条形多层结构的位置。