Abstract:
A method for fabricating an interposer is provided, which includes the steps of: providing a substrate body having a chip mounting side and an opposite external connection side and a plurality of conductive through holes communicating the chip mounting side and the external connection side, wherein the chip mounting side of the substrate body is covered with a protection layer; performing a singulation process on the external connection side of the substrate body; bonding the substrate body to a carrier via the external connection side thereof; removing the protection layer; and removing the carrier to form a plurality of interposers, thereby simplifying the fabrication process and improving the product yield.
Abstract:
The present invention provides a semiconductor package and a method of fabricating the same, including: placing a semiconductor element in a groove of a carrier; forming a dielectric layer on the semiconductor element; forming on the dielectric layer a circuit layer electrically connected to the semiconductor element; and removing a first portion of the carrier below the groove to keep a second of the carrier on a sidewall of the groove intact for the second portion to function as a supporting part. The present invention does not require formation of a silicon interposer, therefore the overall cost of the final product is much reduced.
Abstract:
The disclosure provides an electronic package and a method of manufacturing the same. The method is characterized by encapsulating an electronic component with a packaging layer and forming on an upper surface of the packaging layer a circuit structure that is electrically connected to the electronic component; and forming a stress-balancing layer on a portion of the lower surface of the packaging layer to balance the stress exerted on the upper and lower surfaces of the packaging layer, thereby reducing the overall package warpage and facilitating the manufacturing process.
Abstract:
The disclosure provides an electronic package and a method of manufacturing the same. The method is characterized by encapsulating an electronic component with a packaging layer and forming on an upper surface of the packaging layer a circuit structure that is electrically connected to the electronic component; and forming a stress-balancing layer on a portion of the lower surface of the packaging layer to balance the stress exerted on the upper and lower surfaces of the packaging layer, thereby reducing the overall package warpage and facilitating the manufacturing process.
Abstract:
A semiconductor package is provided, which includes: a circuit structure having a first bottom surface and a first top surface opposite to the first bottom surface; at least a semiconductor element disposed on the first top surface of the circuit structure and electrically connected to the circuit structure; an encapsulant formed on the first top surface of the circuit structure to encapsulate the semiconductor element, wherein the encapsulant has a second bottom surface facing the first top surface of the circuit structure and a second top surface opposite to the second bottom surface; and a strengthening layer formed on the second top surface of the encapsulant, or formed between the circuit structure and the encapsulant, or formed on the first bottom surface of the circuit structure, thereby effectively preventing the encapsulant from warping and the semiconductor element from cracking.
Abstract:
An electronic package is provided, including a circuit portion, an electronic element disposed on the circuit portion and a lid member disposed on the circuit portion to cover the electronic element. A separation portion is formed between the lid member and the electronic element. The lid member facilitates to prevent warping of the overall package structure. The invention further provides a method for fabricating the electronic package.
Abstract:
An interconnection structure for a package is disclosed. The interconnection structure includes a substrate body having a conductive portion formed on a surface thereof; a first photosensitive dielectric layer formed on the surface of the substrate body and having a via for exposing the conductive potion; a conductive via formed in the via; a second photosensitive dielectric layer formed on the first photosensitive dielectric layer and having a opening for exposing the conductive via and a portion of the first photosensitive dielectric layer; and a conductive trace layer formed in the opening of the second photosensitive dielectric layer so as to be electrically connected to the conductive portion through the conductive via, thereby simplifying the fabrication process and reducing the fabrication cost and time.
Abstract:
A fabrication method of a package structure is provided, which includes the steps of: providing an interposer having a plurality of recess holes; forming a conductive bump in a lower portion of each of the recess holes; forming a conductive through hole on the conductive bump in each of the recess holes; removing a portion of the interposer so as for the conductive bumps to protrude from the interposer; and mounting at least a first external element on the conductive bumps, thereby simplifying the fabrication process, shortening the process time and reducing the material cost.
Abstract:
The disclosure provides an electronic package and a method of manufacturing the same. The method is characterized by encapsulating an electronic component with a packaging layer and forming on an upper surface of the packaging layer a circuit structure that is electrically connected to the electronic component; and forming a stress-balancing layer on a portion of the lower surface of the packaging layer to balance the stress exerted on the upper and lower surfaces of the packaging layer, thereby reducing the overall package warpage and facilitating the manufacturing process.
Abstract:
A method for fabricating a substrate having an electrical interconnection structure is provided, which includes the steps of: providing a substrate body having a plurality of conductive pads and first and second passivation layers sequentially formed on the substrate body and exposing the conductive pads; forming a seed layer on the second passivation layer and the conductive pads; forming a first metal layer on each of the conductive pads, wherein the first metal layer is embedded in the first and second passivation layers without being protruded from the second passivation layer; and forming on the first metal layer a second metal layer protruded from the second passivation layer. As such, when the seed layer on the second passivation layer is removed by etching using an etchant, the etchant will not erode the first metal layer, thereby preventing an undercut structure from being formed underneath the second metal layer.