公开(公告)号：US20130299867A1

公开(公告)日：2013-11-14

申请号：US13878673

申请日：2011-09-28

申请人： Stefan Illek ,  Ulrich Steegmüller ,  Norwin von Malm

发明人： Stefan Illek ,  Ulrich Steegmüller ,  Norwin von Malm

IPC分类号： H01L33/62

CPC分类号： H01L33/62 ,  H01L27/153 ,  H01L2224/48463

摘要： A light-emitting diode chip includes at least two semiconductor bodies, each semiconductor body including at least one active area that generates radiation, a carrier having a top side and an underside facing away from the top side, and an electrically insulating connector arranged at the top side of the carrier, wherein the electrically insulating connector is arranged between the semiconductor bodies and the top side of the carrier, the electrically insulating connector imparts a mechanical contact between the semiconductor bodies and the carrier, and at least some of the semiconductor bodies electrically connect in series with one another.

摘要翻译： 发光二极管芯片包括至少两个半导体本体，每个半导体主体包括产生辐射的至少一个有效区域，具有顶侧和背面离开顶侧的载体;以及电绝缘连接器， 所述电绝缘连接器设置在所述半导体主体和所述载体的顶侧之间，所述电绝缘连接器在所述半导体主体和所述载体之间施加机械接触，并且所述半导体主体中的至少一些电 相互连接。

公开(公告)号：US20130043496A1

公开(公告)日：2013-02-21

申请号：US13522508

申请日：2011-01-17

申请人： Matthias Sabathil ,  Norwin von Malm ,  Lutz Hoeppel ,  Stefan Illek ,  Bernd Barchmann ,  Patrick Rode

发明人： Matthias Sabathil ,  Norwin von Malm ,  Lutz Hoeppel ,  Stefan Illek ,  Bernd Barchmann ,  Patrick Rode

IPC分类号： H01L33/08

CPC分类号： H01L25/0753 ,  H01L33/22 ,  H01L33/507 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.

摘要翻译： 一种具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体上被选定的位置覆盖，发光二极管芯片布置 在后载体和前载体之间形成阵列，发光二极管由后和/或前载体电接触并由后载体和前载体机械固定，前载体热传导耦合到发光二极管芯片，并且包括光输出耦合 面对远离发光二极管芯片的光输出耦合面将发光二极管芯片释放的一部分废热释放到周围环境中，当发光二极管芯片的照明装置为100mW或更小时，每个发光二极管芯片的功率为100mW 具有100 lm / W以上的光收率。

公开(公告)号：US08293553B2

公开(公告)日：2012-10-23

申请号：US11597928

申请日：2005-04-25

申请人： Stefan Illek ,  Wilhelm Stein ,  Robert Walter ,  Ralph Wirth

发明人： Stefan Illek ,  Wilhelm Stein ,  Robert Walter ,  Ralph Wirth

IPC分类号： H01L21/00 ,  H01L23/58

CPC分类号： H01L21/02461 ,  H01L21/02463 ,  H01L21/02554 ,  H01L21/02573 ,  H01L21/02631 ,  H01L21/7605 ,  H01L33/0062 ,  H01L33/42

摘要： In a method for producing at least at least one area (8) with reduced electrical conductivity within an electrically conductive III-V semiconductor layer (3), a ZnO layer (1) is applied to the area (8) of the semiconductor layer (3) and subsequently annealed at a temperature preferably between 300° C. and 500° C. The ZnO layer (1) is preferably deposited on the III-V semiconductor layer (3) at a temperature of less than 150° C., preferably at a temperature greater than or equal to 25° C. and less than or equal to 120° C. The area (8) with reduced electrical conductivity is preferably located in a radiation emitting optoelectronic device between the active zone (4) and a connecting contact (7) in order to reduce current injection into the areas of the active zone (4) located opposite to the connecting contact (7).

摘要翻译： 在用于在导电III-V半导体层（3）内制造具有降低的导电性的至少一个区域（8）的方法中，将ZnO层（1）施加到半导体层的区域（8） 3），然后在优选300℃至500℃的温度下退火。优选在低于150℃的温度下将ZnO层（1）沉积在III-V半导体层（3）上，优选 在大于或等于25℃且小于或等于120℃的温度下，具有降低的导电性的区域（8）优选位于激活区域（4）和连接 触点（7），以便减少电流注入位于与连接触点（7）相对的有源区域（4）的区域中。

公开(公告)号：US08017953B2

公开(公告)日：2011-09-13

申请号：US12158474

申请日：2006-11-21

申请人： Berthold Hahn ,  Ralph Wirth ,  Tony Albrecht ,  Magnus Ahlstedt ,  Stefan Illek ,  Klaus Streubel

发明人： Berthold Hahn ,  Ralph Wirth ,  Tony Albrecht ,  Magnus Ahlstedt ,  Stefan Illek ,  Klaus Streubel

IPC分类号： H01L27/15

CPC分类号： H01L33/145 ,  H01L33/42

摘要： An LED chip is specified that comprises at least one current barrier. The current barrier is suitable for selectively preventing or reducing, by means of a reduced current density, the generation of radiation in a region laterally covered by the electrical connector body. The current spreading layer contains at least one TCO (Transparent Conductive Oxide). In a particularly preferred embodiment, at least one current barrier is contained which comprises material of the epitaxial semiconductor layer sequence, material of the current spreading layer and/or an interface between the semiconductor layer sequence and the current spreading layer. A method for producing an LED chip is also specified.

摘要翻译： 指定包括至少一个电流屏障的LED芯片。 电流屏障适合于通过减小的电流密度选择性地防止或减少由电连接器主体横向覆盖的区域中的辐射的产生。 电流扩散层含有至少一种TCO（透明导电氧化物）。 在特别优选的实施例中，包含至少一个电流屏障，其包括外延半导体层序列的材料，电流扩展层的材料和/或半导体层序列和电流扩展层之间的界面。 还指定了用于制造LED芯片的方法。

公开(公告)号：US20100019268A1

公开(公告)日：2010-01-28

申请号：US12298750

申请日：2007-03-26

申请人： Stefan Illek

发明人： Stefan Illek

IPC分类号： H01L33/00

CPC分类号： H01L33/387 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic semiconductor chip (1) is specified having a semiconductor body (2) which comprises a semiconductor layer sequence and an active area which is suitable for radiation production, and having a radiation-permeable and electrically conductive contact layer (6) which is arranged on the semiconductor body and is electrically conductively connected to the active area, with the contact layer extending over a barrier layer (5) in the semiconductor layer sequence and over a connecting layer (4) in the semiconductor layer sequence, and with the contact layer being electrically conductively connected to the active area via a connecting area (7) of the connecting layer. A method is also specified for producing a contact structure for an optoelectronic semiconductor chip which is suitable for radiation production.

摘要翻译： 光电子半导体芯片（1）具有半导体本体（2），该半导体本体（2）包括半导体层序列和适于辐射生产的有源区，并且具有辐射可透过导电的接触层（6） 并且导电地连接到有源区，其中接触层在半导体层序列中的阻挡层（5）上延伸并且在半导体层序列中的连接层（4）上方，并且与接触层 经由连接层的连接区域（7）与导电区域电连接。 还规定了用于制造适合于辐射生产的光电子半导体芯片的接触结构的方法。

公开(公告)号：US20090065800A1

公开(公告)日：2009-03-12

申请号：US10588167

申请日：2005-02-18

申请人： Ralf Wirth ,  Herbert Brunner ,  Stefan Illek ,  Dieter Eissler

发明人： Ralf Wirth ,  Herbert Brunner ,  Stefan Illek ,  Dieter Eissler

IPC分类号： H01L33/00 ,  H01L31/0203 ,  H01L31/18

CPC分类号： H01L31/022408 ,  H01L31/022416 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/382 ,  H01L2224/16225

摘要： Disclosed is an optoelectronic component (1) comprising a semiconductor function region (2) with an active zone (400) and a lateral main direction of extension, said semiconductor function region including at least one opening (9, 27, 29) through the active zone, and there being disposed in the region of the opening a connecting conductor material (8) that is electrically isolated (10) from the active zone in at least in a subregion of the opening. Further disclosed are a method for producing such an optoelectronic component and a device comprising a plurality of optoelectronic components. The component and the device can be produced entirely on-wafer.

摘要翻译： 公开了一种光电子部件（1），其包括具有有源区（400）和横向主延伸方向的半导体功能区（2），所述半导体功能区包括至少一个开口（9,27,29） 并且在所述开口的区域中设置有至少在所述开口的一个子区域中与所述活性区电隔离（10）的连接导体材料（8）。 进一步公开的是制造这种光电子部件的方法和包括多个光电子部件的器件。 组件和设备可以完全在晶片上生产。

公开(公告)号：US20090008751A1

公开(公告)日：2009-01-08

申请号：US11597928

申请日：2005-04-25

申请人： Stefan Illek ,  Wilhelm Stein ,  Robert Walter ,  Ralph Wirth

发明人： Stefan Illek ,  Wilhelm Stein ,  Robert Walter ,  Ralph Wirth

IPC分类号： H01L23/58 ,  C23C14/00

CPC分类号： H01L21/02461 ,  H01L21/02463 ,  H01L21/02554 ,  H01L21/02573 ,  H01L21/02631 ,  H01L21/7605 ,  H01L33/0062 ,  H01L33/42

摘要： In a method for producing at least at least one area (8) with reduced electrical conductivity within an electrically conductive III-V semiconductor layer (3), a ZnO layer (1) is applied to the area (8) of the semiconductor layer (3) and subsequently annealed at a temperature preferably between 300° C. and 500° C. The ZnO layer (1) is preferably deposited on the III-V semiconductor layer (3) at a temperature of less than 150° C., preferably at a temperature greater than or equal to 25° C. and less than or equal to 120° C. The area (8) with reduced electrical conductivity is preferably located in a radiation emitting optoelectronic device between the active zone (4) and a connecting contact (7) in order to reduce current injection into the areas of the active zone (4) located opposite to the connecting contact (7).

摘要翻译： 在用于在导电III-V半导体层（3）内制造具有降低的导电性的至少一个区域（8）的方法中，将ZnO层（1）施加到半导体层的区域（8） 3），然后在优选300℃至500℃的温度下退火。优选在低于150℃的温度下将ZnO层（1）沉积在III-V半导体层（3）上，优选 在大于或等于25℃且小于或等于120℃的温度下，具有降低的导电性的区域（8）优选位于激活区域（4）和连接 触点（7），以便减少电流注入位于与连接触点（7）相对的有源区域（4）的区域中。

公开(公告)号：US20060234482A1

公开(公告)日：2006-10-19

申请号：US11393533

申请日：2006-03-30

申请人： Andreas Ploessl ,  Stefan Illek ,  Vincent Grolier

发明人： Andreas Ploessl ,  Stefan Illek ,  Vincent Grolier

IPC分类号： H01L21/24 ,  H01L21/40 ,  H01L21/265

CPC分类号： H01L24/83 ,  H01L24/29 ,  H01L24/33 ,  H01L33/62 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/83191 ,  H01L2224/83801 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/157 ,  H01L2924/1579 ,  H01L2924/3025 ,  H01L2924/01083 ,  H01L2924/00014

摘要： A semiconductor chip (1), to which a layer sequence (2) intended for the production of a soldered connection has been applied. The layer sequence (2) comprises a solder layer (15) and an oxidation prevention layer (17), which follows the solder layer (15) as seen from the semiconductor chip (1). A barrier layer (16) is included between the solder layer (15) and the oxidation prevention layer (17). This prevents a constituent of the solder layer (15) from diffusing through the oxidation prevention layer (17) prior to the soldering operation, where it would effect oxidation that is disadvantageous for producing a soldered connection.

摘要翻译： 已经应用了用于生产焊接连接的层序列（2）的半导体芯片（1）。 层序列（2）包括如从半导体芯片（1）所见的跟随焊料层（15）的焊料层（15）和防氧化层（17）。 阻焊层（16）包括在焊料层（15）和防氧化层（17）之间。 这防止焊接层（15）的组成部分在焊接操作之前通过氧​​化防止层（17）扩散，在那里它将产生不利于生产焊接连接的氧化。

公开(公告)号：US20060065905A1

公开(公告)日：2006-03-30

申请号：US10529673

申请日：2003-09-05

申请人： Dominik Eisert ,  Stefan Illek ,  Wolfgang Schmid

发明人： Dominik Eisert ,  Stefan Illek ,  Wolfgang Schmid

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L23/3677 ,  H01L24/29 ,  H01L24/83 ,  H01L24/95 ,  H01L2224/29014 ,  H01L2224/29124 ,  H01L2224/29164 ,  H01L2224/29169 ,  H01L2224/83203 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00

摘要： A semiconductor component having a light-emitting semiconductor layer or a light-emitting semiconductor element, two contact locations and a vertically or horizontally patterned carrier substrate, and a method for producing a semiconductor component are disclosed for the purpose of reducing or compensating for the thermal stresses in the component. The thermal stresses arise as a result of temperature changes during processing and during operation and on account of the different expansion coefficients of the semiconductor and carrier substrate. The carrier substrate is patterned in such a way that the thermal stresses are reduced or compensated for sufficiently to ensure that the component does not fail.

摘要翻译： 公开了具有发光半导体层或发光半导体元件，两个接触位置和垂直或水平图案化载体衬底的半导体部件以及用于制造半导体部件的方法，用于减少或补偿热 组件中的压力。 热应力由于处理过程中和工作期间的温度变化以及由于半导体和载体衬底的不同膨胀系数而产生。 载体基板被图案化，使得热应力被减少或补偿以充分确保部件不失败。

公开(公告)号：US09076941B2

公开(公告)日：2015-07-07

申请号：US14004442

申请日：2012-03-12

申请人： Siegfried Herrmann ,  Stefan Illek

发明人： Siegfried Herrmann ,  Stefan Illek

IPC分类号： H01L33/60 ,  H01L33/62 ,  H01L33/58 ,  H01L33/44 ,  H01L23/00 ,  H01L33/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/46 ,  H01S5/02 ,  H01S5/022 ,  H01S5/323

CPC分类号： H01L33/60 ,  H01L24/19 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01S5/0201 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/32341 ,  H01L2924/00

摘要： A method of producing at least one optoelectronic semiconductor chip includes providing at least one optoelectronic structure, including a growth support and a semiconductor layer sequence with an active region, the semiconductor layer sequence being deposited epitaxially on the growth support, providing a carrier, applying the at least one optoelectronic structure onto the carrier with its side remote from the growth support, coating the at least one optoelectronic structure with a protective material, the protective material covering the outer face, remote from the carrier, of the growth support and side faces of the growth support and of the semiconductor layer sequence, and detaching the growth support from the semiconductor layer sequence of the at least one optoelectronic structure.

摘要翻译： 一种制造至少一个光电子半导体芯片的方法包括：提供至少一个光电结构，包括生长支持体和具有有源区域的半导体层序列，半导体层序列外延地沉积在生长支持体上，提供载体， 至少一个光电结构到其载体上，其侧面远离生长载体，用保护材料涂覆至少一个光电结构，该保护材料覆盖远离载体的生长载体和侧面的外表面 生长支持物和半导体层序列，以及从至少一个光电子结构的半导体层序列分离生长支持物。