公开(公告)号：US20120247677A1

公开(公告)日：2012-10-04

申请号：US13434989

申请日：2012-03-30

申请人： Shinji Himori ,  Norikazu Yamada ,  Ohse Takeshi

发明人： Shinji Himori ,  Norikazu Yamada ,  Ohse Takeshi

IPC分类号： H01L21/306 ,  H01L21/3065

CPC分类号： H01J37/32697 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32366 ,  H01J37/32642 ,  H01J37/32706 ,  H01J37/32724 ,  H01J2237/327

摘要： A substrate processing apparatus capable of improving a processing controllability in an etching process is provided. The substrate processing apparatus (10) includes a depressurized processing room (11); a susceptor (12) that is provided in the processing room (11) and configured to mount a wafer (W) thereon; a HF high frequency power supply (18) configured to apply a high frequency voltage for plasma generation to the susceptor (12); a LF high frequency power supply (20) configured to apply a high frequency voltage for a bias voltage generation to the susceptor (12); and a DC voltage applying unit (23) configured to apply a DC voltage of a rectangle-shaped wave to the susceptor (12).

摘要翻译： 提供了能够提高蚀刻处理中的处理可控性的基板处理装置。 基板处理装置（10）具有减压处理室（11）。 设置在处理室（11）中并构造成在其上安装晶片（W）的感受体（12）; HF高频电源（18），被配置为向所述基座（12）施加用于等离子体产生的高频电压; LF高频电源（20），被配置为向所述基座（12）施加偏置电压产生的高频电压; 以及直流电压施加单元（23），被配置为向所述基座（12）施加矩形波的直流电压。

公开(公告)号：US08114247B2

公开(公告)日：2012-02-14

申请号：US12941701

申请日：2010-11-08

申请人： Shosuke Endoh ,  Shinji Himori

发明人： Shosuke Endoh ,  Shinji Himori

IPC分类号： H01L21/3065 ,  H01L21/205

CPC分类号： H01L21/67069 ,  H01J37/32642 ,  Y10T279/23

摘要： A plasma processing apparatus and a focus ring enables to perform uniform plasma processing over the entire surface of a substrate to be processed to thereby improve in-surface uniformity of plasma processing compared with conventional cases. The focus ring is disposed on a susceptor 2, which serves to mount thereon a semiconductor wafer W and further functions as a lower electrode, to surround a periphery of the semiconductor wafer W. The focus ring 6 includes a ring member of a thin plate shape disposed to surround the periphery of the wafer W while maintaining a gap therebetween and a lower ring body installed below the semiconductor wafer and the ring member of the thin plate shape.

摘要翻译： 等离子体处理装置和聚焦环能够在待处理的基板的整个表面上进行均匀的等离子体处理，从而提高等离子体处理的表面均匀性，与常规情况相比。 聚焦环设置在基座2上，该基座2用于在其上安装半导体晶片W，并且还用作下部电极，以围绕半导体晶片W的周围。聚焦环6包括薄板形状的环形构件 设置成围绕晶片W的周边保持间隙，并且安装在半导体晶片下方的下环体和薄板形状的环构件。

公开(公告)号：US20110031217A1

公开(公告)日：2011-02-10

申请号：US12848342

申请日：2010-08-02

申请人： Shinji Himori

发明人： Shinji Himori

IPC分类号： H01L21/306

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32715

摘要： A plasma processing apparatus includes: a processing chamber that accommodates a substrate therein; a lower electrode positioned within the processing chamber and serving as a mounting table; an upper electrode positioned to face the lower electrode within the processing chamber; a first high frequency power supply that applies high frequency power for plasma generation of a first frequency to the lower electrode or the upper electrode; a second high frequency power supply that applies high frequency power for ion attraction of a second frequency lower than the first frequency to the lower electrode; at least one bias distribution control electrode positioned at least in a peripheral portion above the lower electrode; and at least one bias distribution control power supply that applies an AC voltage or a square wave voltage of a third frequency lower than the second frequency to the at least one bias distribution control electrode.

摘要翻译： 一种等离子体处理装置，包括：处理室，其容纳基板; 位于处理室内并用作安装台的下电极; 位于处理室内面向下电极的上电极; 第一高频电源，其将用于等离子体产生第一频率的高频功率施加到下电极或上电极; 第二高频电源，其将高频功率施加到低于第一频率的第二频率的离子吸引到下电极; 至少一个偏置分布控制电极，至少位于下电极上方的周边部分中; 以及至少一个偏压分配控制电源，其将低于第二频率的第三频率的AC电压或方波电压施加到至少一个偏置分配控制电极。

公开(公告)号：US07585386B2

公开(公告)日：2009-09-08

申请号：US11195803

申请日：2005-08-03

申请人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

发明人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32541

摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

摘要翻译： 用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的​​处理容器。 第一电极设置在处理容器内。 供应系统被配置为将处理气体供应到处理容器中。 电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。 多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

公开(公告)号：US20090199967A1

公开(公告)日：2009-08-13

申请号：US12365385

申请日：2009-02-04

申请人： Shinji Himori ,  Yasuharu Sasaki ,  Masakazu Higuma

发明人： Shinji Himori ,  Yasuharu Sasaki ,  Masakazu Higuma

IPC分类号： C23F1/08

CPC分类号： H01L21/6833 ,  H01J37/20 ,  H01J37/32091 ,  H01J2237/0209 ,  H02N13/00

摘要： A mounting stage for a plasma processing apparatus that can prevent degradation of an insulating film in a semiconductor device on a substrate. A conductor member is connected to a radio-frequency power source for producing plasma. A dielectric layer is buried in a central portion of an upper surface of the conductor member. An electrostatic chuck is mounted on the dielectric layer. The electrostatic chuck has an electrode film that satisfies the following condition: δ/z≧85 where δ=(ρv/(μπf))1/2 where z is the thickness of the electrode film, δ is the skin depth of the electrode film with respect to radio-frequency electrical power supplied from the radio-frequency power source, f is the frequency of the radio-frequency electrical power, π is the ratio of a circumference of a circle to its diameter, μ is the magnetic permeability of the electrode film, and ρv is the specific resistance of the electrode film.

摘要翻译： 一种等离子体处理装置的安装平台，其能够防止基板上的半导体装置中的绝缘膜的劣化。 导体构件连接到用于产生等离子体的射频电源。 电介质层埋在导体部件的上表面的中心部分。 静电卡盘安装在电介质层上。 静电吸盘具有满足以下条件的电极膜：<？in-line-formula description =“In-line formula”end =“lead”？> delta / z> = 85 <？in-line-formula description = “直线公式”end =“tail”？>其中delta =（rhov /（mupif））1/2其中z是电极膜的厚度，delta是电极膜相对于放射线的厚度， f是射频电力的频率，pi是圆周长与其直径的比率，μ是电极膜的导磁率，rhov 是电极膜的电阻率。

公开(公告)号：US07230202B2

公开(公告)日：2007-06-12

申请号：US10927587

申请日：2004-08-27

申请人： Daisuke Hayashi ,  Kazuya Nagaseki ,  Shinji Himori ,  Atsushi Matsuura ,  Ryo Nonaka

发明人： Daisuke Hayashi ,  Kazuya Nagaseki ,  Shinji Himori ,  Atsushi Matsuura ,  Ryo Nonaka

IPC分类号： B23K9/00

CPC分类号： H01J37/32009 ,  H01J37/32082 ,  H01J37/32532

摘要： Disclosed herein is a plasma processing apparatus that introduces a process gas into an airtight processing container, that applies a radio frequency power to generate plasma, and that conducts a plasma process to an object to be processed arranged in the processing container. The plasma processing apparatus includes: an electrode unit arranged in the processing container, the electrode unit having an electrode for applying the radio frequency power, and a space portion arranged in the electrode unit, the space portion insulating the electrode and the processing container from each other. The space portion communicates with atmospheric air outside the processing container.

摘要翻译： 这里公开了一种等离子体处理装置，其将处理气体引入到气密处理容器中，该气密处理容器施加射频功率以产生等离子体，并且将等离子体处理传送到布置在处理容器中的被处理物体。 等离子体处理装置包括：布置在处理容器中的电极单元，具有用于施加射频电力的电极的电极单元和布置在电极单元中的空间部分，每个电极单元绝缘电极和处理容器的空间部分 其他。 空间部分与处理容器外部的大气连通。

公开(公告)号：US20060118044A1

公开(公告)日：2006-06-08

申请号：US11292353

申请日：2005-12-02

申请人： Shinji Himori ,  Noriaki Imai ,  Katsumi Horiguchi ,  Takaaki Nezu ,  Shoichiro Matsuyama ,  Hiroki Matsumaru ,  Toshihiro Hayami ,  Kazuya Nagaseki ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Yoshikazu Sugiyasu

发明人： Shinji Himori ,  Noriaki Imai ,  Katsumi Horiguchi ,  Takaaki Nezu ,  Shoichiro Matsuyama ,  Hiroki Matsumaru ,  Toshihiro Hayami ,  Kazuya Nagaseki ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Yoshikazu Sugiyasu

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32697 ,  H01J37/32082

摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.

摘要翻译： 电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。 在腔室中，第一电极和第二电极相对设置。 设置RF电源以向第一或第二电极提供RF功率，以在第一和第二电极之间的等离子体产生区域内形成RF电场，以将处理气体转化为等离子体。 目标基板由第一和第二电极之间的支撑构件支撑，使得其工艺目标表面面向第二电极。 导电功能表面设置在等离子体产生区域周围的周围区域中，并且被接地以与DC等离子体耦合以扩展等离子体。

公开(公告)号：US06733624B2

公开(公告)日：2004-05-11

申请号：US10345294

申请日：2003-01-16

申请人： Akira Koshiishi ,  Shinji Himori

发明人： Akira Koshiishi ,  Shinji Himori

IPC分类号： H01L21302

CPC分类号： H01L21/6835 ,  C23C16/4585 ,  H01L21/6831 ,  H01L21/6833 ,  H01L24/90 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082

摘要： An apparatus for holding an object to be processed, according to this invention is mounted in a plasma processing apparatus and includes a convex-shaped holder main body, first dielectric film, and second dielectric film. The holder main body has a holding portion which holds an object to be processed placed on it and a flange formed on the peripheral portion of the holding portion to fit with a focus ring. The first dielectric film attracts the object to be processed placed on the holding portion to the holder main body by a Coulomb force. The second dielectric film attracts the focus ring fitted on the flange to the holder main body by an attracting force larger than that of the first dielectric film using a Johnson-Rahbek force. The electrostatic attracting force of the focus ring for the holder main body is increased, so that the cooling effect is increased. A change in plasma processing characteristics over time in the vicinity of the focus ring can be eliminated, and the entire surface of the object to be processed can be processed uniformly.

摘要翻译： 根据本发明的用于保持待处理物体的装置安装在等离子体处理装置中，并且包括凸形保持器主体，第一电介质膜和第二电介质膜。 保持器主体具有保持放置在其上的待加工物体的保持部分和形成在保持部分的周边部分上以与聚焦环配合的凸缘。 第一电介质膜通过库仑力吸引放置在保持部上的待处理物体到保持器主体。 使用Johnson-Rahbek力，第二电介质膜通过大于第一电介质膜的吸引力将安装在凸缘上的聚焦环吸引到保持器主体。 用于保持器主体的聚焦环的静电吸引力增加，从而增加了冷却效果。 可以消除焦点环附近的等离子体处理特性随时间的变化，并且可以均匀地处理被处理物体的整个表面。

公开(公告)号：US5514425A

公开(公告)日：1996-05-07

申请号：US392737

申请日：1995-03-06

申请人： Hitoshi Ito ,  Kyoichi Suguro ,  Nobuo Hayasaka ,  Haruo Okano ,  Shinji Himori ,  Kazuya Nagaseki ,  Syuji Mochizuki

发明人： Hitoshi Ito ,  Kyoichi Suguro ,  Nobuo Hayasaka ,  Haruo Okano ,  Shinji Himori ,  Kazuya Nagaseki ,  Syuji Mochizuki

IPC分类号： H01L21/205 ,  C23C16/04 ,  C23C16/34 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/768 ,  C23C14/02

CPC分类号： H01L21/76865 ,  C23C16/045 ,  C23C16/34 ,  H01L21/76843 ,  H01L21/76877

摘要： A thin film-forming method according to the present invention is characterized by comprising the steps of introducing TiCl.sub.4, hydrogen, nitrogen and NF.sub.3 into a film-forming chamber containing a semiconductor substrate (1) having a groove made in its surface, after the chamber has been evacuated to 10.sup.-4 Torr or less; and converting these gases into plasma, thereby forming a thin TiN film on only that portion of the groove which is other than the wall surfaces of the groove.

摘要翻译： PCT No.PCT / JP94 / 01089 Sec。 371日期：1995年3月6日 102（e）1995年3月6日PCT PCT 1994年7月5日PCT公布。 第WO95 / 02076号公报 日本1990年1月19日。根据本发明的薄膜形成方法的特征在于包括以下步骤：将TiCl 4，氢，氮和NF 3引入包含具有凹槽的半导体衬底（1）的成膜室 在其表面上，在室被抽真空至10-4乇或更小之后; 并将这些气体转化为等离子体，从而在凹槽的除了凹槽的壁表面之外的部分上形成薄的TiN膜。

公开(公告)号：US09275836B2

公开(公告)日：2016-03-01

申请号：US12848342

申请日：2010-08-02

申请人： Shinji Himori

发明人： Shinji Himori

IPC分类号： H01J37/32

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32715

摘要： A plasma processing apparatus includes: a processing chamber that accommodates a substrate therein; a lower electrode positioned within the processing chamber and serving as a mounting table; an upper electrode positioned to face the lower electrode within the processing chamber; a first high frequency power supply that applies high frequency power for plasma generation of a first frequency to the lower electrode or the upper electrode; a second high frequency power supply that applies high frequency power for ion attraction of a second frequency lower than the first frequency to the lower electrode; at least one bias distribution control electrode positioned at least in a peripheral portion above the lower electrode; and at least one bias distribution control power supply that applies an AC voltage or a square wave voltage of a third frequency lower than the second frequency to the at least one bias distribution control electrode.

摘要翻译： 一种等离子体处理装置，包括：处理室，其容纳基板; 位于处理室内的下电极，用作安装台; 位于处理室内面向下电极的上电极; 第一高频电源，其将用于等离子体产生第一频率的高频功率施加到下电极或上电极; 第二高频电源，其将高频功率施加到低于第一频率的第二频率的离子吸引到下电极; 至少一个偏置分布控制电极，至少位于下电极上方的周边部分中; 以及至少一个偏压分配控制电源，其向所述至少一个偏压分配控制电极施加低于所述第二频率的第三频率的AC电压或方波电压。