公开(公告)号：US20160357103A1

公开(公告)日：2016-12-08

申请号：US15117686

申请日：2015-02-17

Applicant: TOKYO ELECTRON LIMITED ,  OSAKA UNIVERSITY

Inventor： Seiji NAGAHARA ,  Seiichi TAGAWA ,  Akihiro OSHIMA

IPC: G03F7/039 ,  G03F7/16 ,  G03F7/20 ,  G03F1/26 ,  G03F7/32 ,  G03F1/20 ,  G03F1/24 ,  G03F7/004 ,  G03F7/38

CPC classification number: G03F7/0397 ,  C07C303/32 ,  C07C309/07 ,  C07C381/12 ,  C08F220/14 ,  C08F220/22 ,  C08F220/28 ,  C08F220/38 ,  G03F1/20 ,  G03F1/24 ,  G03F1/26 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/2022 ,  G03F7/2041 ,  G03F7/32 ,  G03F7/322 ,  G03F7/38 ,  H01L21/0274

Abstract: A photosensitization chemical-amplification type resist material according to the present invention is used for a two-stage exposure lithography process, and contains (1) a developable base component and (2) a component generating a photosensitizer and an acid through exposure. Among three components consisting of (a) an acid-photosensitizer generator, (b) a photosensitizer precursor, and (c) a photoacid generator, the above component contains only the component (a), any two components, or all of the components (a) to (c).

Abstract translation: 根据本发明的光敏化学放大型抗蚀剂材料用于两级曝光光刻工艺，并且包含（1）可显影基材组分和（2）通过曝光产生光敏剂和酸的组分。 在（a）酸敏感剂发生剂，（b）光敏剂前体和（c）光酸产生剂中的三种组分中，上述组分仅含有组分（a），任何两种组分或全部组分 a）至（c）。

公开(公告)号：US20150241783A1

公开(公告)日：2015-08-27

申请号：US14629843

申请日：2015-02-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Michael A. CARCASI ,  Joshua S. HOOGE ,  Benjamen M. RATHSACK ,  Seiji NAGAHARA

IPC: G03F7/20 ,  G03F7/09 ,  G03F7/30 ,  H01L21/027

CPC classification number: G03F7/2022 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/09 ,  G03F7/091 ,  G03F7/11 ,  G03F7/2002 ,  G03F7/2004 ,  G03F7/2024 ,  G03F7/26 ,  G03F7/30 ,  G03F7/38 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0276

Abstract: The disclosure herein describes methods for Photosensitized Chemically Amplified Resist Chemicals (PS-CAR) to pattern light sensitive films on a semiconductor substrate. In one embodiment, a two-step exposure process may generate higher acid concentration regions within a photoresist layer. The PS-CAR chemicals may include photoacid generators (PAGs) and photosensitizer elements that enhance the decomposition of the PAGs into acid. The first exposure may be a patterned EUV exposure that generates an initial amount of acid and photosensitizer. The second exposure may be a non-EUV flood exposure that excites the photosensitizer which increases the acid generation rate where the photosensitizer is located on the substrate. The distribution of energy during the exposures may be optimized by using certain characteristics (e.g., thickness, index of refraction, doping) of the photoresist layer, an underlying layer, and/or an overlying layer.

Abstract translation: 本文的公开内容描述了用于光敏化学放大抗蚀剂化学品（PS-CAR）在半导体衬底上图案感光膜的方法。 在一个实施方案中，两步曝光工艺可在光致抗蚀剂层内产生更高的酸浓度区域。 PS-CAR化学品可以包括光酸产生剂（PAG）和增强PAG分解成酸的光敏剂元素。 第一次暴露可以是产生初始量的酸和光敏剂的图案化的EUV暴露。 第二次暴露可能是非EUV泛滥暴露，其激发光敏剂，其增加光敏剂位于基底上的酸产生速率。 可以通过使用光致抗蚀剂层，下层和/或上覆层的某些特性（例如，厚度，折射率，掺杂）来优化曝光期间的能量分布。

公开(公告)号：US20250092514A1

公开(公告)日：2025-03-20

申请号：US18970324

申请日：2024-12-05

Applicant: Tokyo Electron Limited

Inventor： Masanobu IGETA ,  Yutaka TAKAHASHI ,  Tatsuya TAMURA ,  Yusuke SUZUKI ,  Toyohiro KAMADA ,  Kenichi OYAMA ,  Reiko TSUZUKI ,  Seiji NAGAHARA ,  Makoto MURAMATSU ,  Satoru MURAMATSU ,  Satoru SHIMURA

IPC: C23C16/40 ,  C23C16/56 ,  G03F7/20 ,  G03F7/40

Abstract: A substrate processing method includes forming a metal oxide resist film on a substrate including an underlayer; forming a pattern in the metal oxide resist film; modifying the metal oxide resist film in which the pattern has been formed; and etching the underlayer by using the modified metal oxide resist film as a mask.

公开(公告)号：US20210277017A1

公开(公告)日：2021-09-09

申请号：US17261267

申请日：2019-07-18

Applicant: LINTFIELD LIMITED ,  TOKYO ELECTRON LIMITED

Inventor： Christopher Wall ,  Seiji NAGAHARA

IPC: C07D495/10 ,  C07D335/16 ,  G03F7/004 ,  G03F7/031 ,  C07D495/04 ,  C07D495/20

Abstract: Latent photoinitiator compounds are described, as well as compositions containing such compounds and their uses in photoinitiated methods for producing photoresist structures.

公开(公告)号：US20180173103A1

公开(公告)日：2018-06-21

申请号：US15828870

申请日：2017-12-01

Applicant: Tokyo Electron Limited

Inventor： Seiji NAGAHARA ,  Masaru Tomono ,  Nobutaka Fukunaga ,  Gousuke Shiraishi

IPC: G03F7/20 ,  H01L21/027

CPC classification number: G03F7/7055 ,  G03F7/16 ,  G03F7/201 ,  G03F7/2022 ,  G03F7/30 ,  G03F7/7005 ,  G03F7/70133 ,  G03F7/70558 ,  H01L21/027 ,  H01L21/67115 ,  H01L21/6715

Abstract: An illuminance distribution response amount as the change amount of the illuminance distribution pattern, associating the position in the irradiation region in the lengthwise direction with the change amount of the illuminance with respect to the change in the drive current, has previously been acquired and stored in a storage unit for each light-emitting block. There is provided an arithmetic processing unit that determines (estimates) a current command value of each of the light-emitting blocks based on a present current command value of each of the light-emitting blocks and the change amount of the illuminance distribution pattern of each light-emitting block in order to bring a present illuminance distribution pattern in the irradiation region in a lengthwise direction close to a target illuminance distribution pattern.

公开(公告)号：US20170031245A1

公开(公告)日：2017-02-02

申请号：US15106915

申请日：2014-12-15

Applicant: Tokyo Electron Limited ,  Osaka University

Inventor： Seiji NAGAHARA ,  Gousuke SHIRAISHI ,  Satoru SHIMURA ,  Kousuke YOSHIHARA ,  Shinichiro KAWAKAMI ,  Masaru TOMONO ,  Seiichi TAGAWA ,  Akihiro OSHIMA

IPC: G03F7/20 ,  H01L21/67

CPC classification number: G03F7/2004 ,  G03F7/20 ,  H01L21/67098 ,  H01L21/67115 ,  H01L21/67196 ,  H01L21/67225

Abstract: A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

Abstract translation: 一种用于处理基板的基板处理系统，包括：设置有多个处理基板的处理装置的处理台; 接口站，其在设置在基板处理系统之外的曝光装置之间直接或间接地传送基板，并且在基板上的抗蚀剂膜上进行图案的曝光;以及基板处理系统; 执行曝光图案之后，使用UV光对基板上的抗蚀剂膜进行后曝光的光照射装置; 以及容纳光照射装置并且可以减压或惰性气体气氛调节的后曝光站，其中后曝光站通过可调节到减压的空间直接或间接连接到曝光装置，或 惰性气体气氛。